Untitled
Abstract: No abstract text available
Text: 123456 1789AB2CDE7B37FDE8B4D7AEB578B69D8 4B8F8D7 BA123B4B !7B69D8 " #$%&4 B989B3'778 $7 B ( 4D9A 8F8D7 BA123B4B !7B69D8 " #$%&4 C77777BD246A4E5 62*)%+
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1789AB2CDE7B37FD
989B3
C77777
246A4E5
A89-7B.
B1323B.
7BA79ED
-B32B123456B
DE7B9AAB47
-B32B123456B!
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Untitled
Abstract: No abstract text available
Text: 123456 1789AB2CDE7B37FDE8B4D7AEB578B69D8 A123B5 BA123B5B7B69D8 !5 "989B3#778 7$%B&% 4D9A E8D9AB'B1A8DF9 78 BA123B5B7B69D8 !5 C77777BD246A4E5 62 &&B4 *
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Original
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1789AB2CDE7B37FD
989B3
C77777
246A4E5
B123456
B/301B,
A79ED
B30B123456B
B9A87
EB123456
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PDF
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bd 7785
Abstract: No abstract text available
Text: 123456 1789AB2CDE7B37FDE8B4D7AEB578B69D8 A123B5 BA123B5B7B69D8 !"5 989B3#778 7$%B!% 4D9A E8D9AB&B1A8DF9'78 BA123B5B7B69D8 !"5 C77777BD246A4E5 *
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Original
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1789AB2CDE7B37FD
989B3
C77777
246A4E5
B123456
B/301B,
A79ED
B30B123456B
B9A87
EB123456
bd 7785
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PDF
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Untitled
Abstract: No abstract text available
Text: 123456 1789AB2CDE7B37FDE8B4D7AEB578B69D8 A123B5 BA123B5B7B69D8 C !5 "989B3#778 7$%B % 4D9A E8D9AB&B1A8DF9'78 BA123B5B7B69D8 !5 B !5)B* !5 C77777BD246A4E5
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Original
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1789AB2CDE7B37FD
989B3
C77777
246A4E5
A89/7B0
B123456
B2334B0
7B7C07
A79ED
/B33B123456B
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PDF
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BGA95
Abstract: No abstract text available
Text: 123456 1789AB2CDE7B37FDE8B4D7AEB578B69D8 A123B4B BA123B4BB 7B69D8 !C"##4 989B3$778 "7%&B& 4D9A !E8D9AB'B1A8DF9 78 BA123B4BB 7B69D8 ! "##4*B!+"##4*B!"##4 !,"##4*B!!"##4
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Original
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1789AB2CDE7B37FD
989B3
C77777
246A4E5
A8937B4
B6378B4
7EB92B!
7B7C47
7BA79ED
3B37B123456B
BGA95
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PDF
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Untitled
Abstract: No abstract text available
Text: 123456 1789AB2CDE7B37FDE8B4D7AEB578B69D8 A123B4B BA123B4B 7B69D8 !C"4 989B3#778 "7$%B% 4D9A !E8D9AB&B1A8DF9'78 BA123B4B 7B69D8 ! "4 B!*"4)B!"4 !+"4)B!"4)B!!"4
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Original
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1789AB2CDE7B37FD
989B3
C77777
246A4E5
A8927B3
B5367B3
7EB81B!
7B7C37
7BA79ED
2B36B123456B
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PDF
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5B8D
Abstract: No abstract text available
Text: 123456 1789AB2CDE7B37FDE8B4D7AEB578B69D8 A123B4B BA123BB4B 7B69D8 !C"#$4B 989B3%778B989B3%778 "7&'B '( 4D9A !E8D9AB B1A8DF9*78 !+"#$4B,B!-"#$4B,B!"#$4 !."#$4B,B!!"#$4
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Original
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1789AB2CDE7B37FD
A123B
989B3
C77777
246A4E5
A8957B6
7B7C67
7BA79ED
5B39B123456B
5B8D
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PDF
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Untitled
Abstract: No abstract text available
Text: 1234 1 4 !"4#$4%5 &"BD7B5D59EDF567897AC5E'7E87A5 5855! E8E59BB8 1AF(8D7E'5$6BD5 A8D' 1 4 !"4#$4%5 &D7B5E85"BD7B
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12345678957A8BCDE8BF5F7
FB57A5
D59EDF5
97AC5E
87AC5+
5EAF52DD5
97AC5'
BDE87AC5DEACB5
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PDF
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4BE67
Abstract: C356D E5 0D E7834
Text: 123456789 ABC9ADEDF9B9CED9 D9DF9B9AD FD9 1 A 23435671839A5BCDBE41 36D5391 "04A!1 %2AD4D92A4346A,84D84A5673DF4.A 2A75A904A.D482A567E4.D84A5746A646D64FA97A DC54C489A 2A E7C52E9A 42.7A 97A .4A 0D40A 62D97A 64346A .79D78A 29A 28A 4+964C47A
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23435671839A5BCDBE41
D4D92
84D84A5673DF4
A75A904A
A567E4.
D84A57
46A646
D64FA97A
4C489A
E7C52E9
4BE67
C356D
E5 0D
E7834
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PDF
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B0646
Abstract: BO650 80846 B0648 Bo648 bd648 D237 DIODE BD646 Q62702-D235 BD660
Text: asc D • û23SbOS D G 0 4 3 CJ1 1 I I S I E G PNP Silicon Darlington Transistors SIEMENS AKTIENGESELLSCHAF>91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 650 are monolithic PNP silicon epibase power darlington
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OCR Scan
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fl23Sb05
DQ43CI1
T-33-31
OP-66)
644/BD
BD648,
BD644.
BO646.
BO648.
BD660
B0646
BO650
80846
B0648
Bo648
bd648
D237 DIODE
BD646
Q62702-D235
BD660
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PDF
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bd 640
Abstract: TOP-66 646 af bd640 BO 648 bd648 diode 648 648 diode BD 650 bd650
Text: 25C D • û23SbOS DQ043CJ1 S I ISIEG . [ PNP Silicon Darlington Transistors SIEMENS A K T I EN GE SE LLS C HA F *91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 6 5 0 are monolithic PNP silicon epibase power darlington
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OCR Scan
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23SbOS
DQ043C
T-33-31
OP-66)
U4J94
BD644,
BD648,
BD650
bd 640
TOP-66
646 af
bd640
BO 648
bd648
diode 648
648 diode
BD 650
bd650
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PDF
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BD 650
Abstract: b0644 BD648 bd646 BD 644 B0648 B0646 bd 648 bd650 darlington bd 645
Text: BD 644 • BD 646 • BD 648 • BD 650 Silizium-PNP-Darlington-Leistungstransistoren Silicon PNP Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage
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OCR Scan
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PDF
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BD 649
Abstract: darlington bd 645 B0643 B0645 BD647 b 647 a c bd649 BD 645 BD643 bd650
Text: BD 643 - BD 645 ' BD 647 - BD 649 Silizium-NPN-Darlington-Leistungstransistoren Silicon NPN Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage
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OCR Scan
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PDF
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BO 649
Abstract: BD 104 darlington bd 645 TOP-66 b 647 c BD 649 bd647 BD64S Q62702-D376 BD 104 NPN
Text: - 25C D • 0235bQS 00043Ô7 7 « S I E Û _ NPN Silicon Darlington Transistors T-33-29 SIEMENS AKTIEN GESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase power darlington transistors 62.5W BD 643, BD 645, BD 647, and BD 649 are monolithic NPN silicon epibase power darlington
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OCR Scan
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0235bQS
T-33-29
OP-66)
643/BD
645/BD
BD643.
0QQ43
T-33-29
BD647
BO 649
BD 104
darlington bd 645
TOP-66
b 647 c
BD 649
BD64S
Q62702-D376
BD 104 NPN
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PDF
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philips BDV64A
Abstract: BDX67
Text: N AflER P H I L I P S / D I S C R E T E ESE D • bb53T31 DOltjEl? b ■ T - £ 7 -3-? Power Devices LOW VOLTAGE, GENERAL PURPOSE DARLINGTONS in order of current rating TYPE NPN PNP PACKAGE OUTLINE fC (D C )(1) V CE0 MINIMUM hpg at f(* ^ (ty p O a t V C E(s»t)
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OCR Scan
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bb53T31
TIP110
TIP111
TIP112
TIP115
TIP116
TIP117
O-220AB
BD679
BD681
philips BDV64A
BDX67
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PDF
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Untitled
Abstract: No abstract text available
Text: POWER TRANSISTORS GENERAL CASES: GENERAL TO- 3 F - 22 PURPOSE TRANSISTORS pt o t T r^ E S ^ W ! NPN PNP 115 : 2N 5874 : 2N 5874A 115 115 ! 2N 5874B 1 2N 5875 150 ! 2N 5875/1 150 150 : 2N 5875/2 150 1 2N 5876 ! 2N 5876A 150 150 ! 2N 5876B 150 : 2N 5877 150
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OCR Scan
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5874B
5876B
5878B
O-220
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PDF
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TRansistor 648
Abstract: power factor PIC circuit transistor bd646 BD646 lco8a LCO 8A BD650 LE17 BD645 BD649
Text: MAGNA Magna Park, Coventry Road, Lutterworth Leicestershire LE17 4JB, England Sales telephone: 01455 554711 Adm in telephone: 01455 552505 Fax: 01455 558843 FS » 2 3 » BD646; 648 BD650; 652 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m o n o lith ic D arlin gton c irc u it fo r audio o u tp u t stages and general
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OCR Scan
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BD646;
BD650;
T0-220
BD645,
BD647,
BD649
BD651.
BD646
Junc650;
7Z67332
TRansistor 648
power factor PIC circuit
transistor bd646
lco8a
LCO 8A
BD650
LE17
BD645
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PDF
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652 smd
Abstract: BDS650 IR P 648 H BDS644 BDS646 BDS648 BDS652
Text: PHILIPS INTERNATIONAL SbE » • 71iaâSb~0GM31SS M73 mTtmT Philips Components Data sheet status P rod uct specification date of issue April 1991 B D S 6 4 4 /6 4 6 /6 4 8 /6 5 0 /6 5 2 PNP Silicon Darlington power transistors PIN N IN G - SOT223 DESCRIPTIO N
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OCR Scan
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711002b
bds644/646/648/650/652
OT223)
BDS643/645/647/649/651.
BDS644
BDS646
BDS648
BDS650
BDS652
652 smd
IR P 648 H
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PDF
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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OCR Scan
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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PDF
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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OCR Scan
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AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
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PDF
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MCF5206
Abstract: No abstract text available
Text: SECTION 6 BUS OPERATION The MCF5206 bus interface supports synchronous data transfers that can be terminated synchronously or asynchronously and burst or burst-inhibited between the MCF5206 and other devices in the system. This section describes the function of the bus, the signals that
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OCR Scan
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MCF5206
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PDF
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LDR 03
Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Text: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren
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OCR Scan
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PDF
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TFK 680 CNY 70
Abstract: 7447n BTP-128-400 ITT TCA 700 Y btp 128 550 74151n Katalog CEMI SFC2741DC 4BYP250-400 TFK 227
Text: NAUKOWO-PRODUKCYJNE CENTRUM PÒLPRZEWODNIKÓW CEMI ELEMENTY PÓtPRZEWODNIKOWE I UKtADY SCALONE USTA PREFERENCYJNA 1982/84 Warszawa 1982 WPROWADZENIE LISTA PREFEREMCYJNA zawiera wykaz podzespolów kowanych aktualnle, przewldzianych do produkcji w w ramach urnów specjallzacyjnych 1 kooperacyjnych.
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OCR Scan
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PDF
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hp ms 7647
Abstract: harris 7644 la 7646 764X ICL764X 187Ly 7646 7647
Text: S i. It 2 >991 IC L 6 4 4 /6 4 5 /646/647 IC L 7 6 4 4 /7 645/7646/7647 2 HARRIS July 1991 Low V o lta g e S te p -U p C o n verters F e a tu re s D e s c rip tio n • +5V @ 40mA From a Single Cell Battery The ICL644, IC L645 and IC L646 are low pow er fixed +5V
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OCR Scan
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ICL644/645/646/647
CL7644/7645/7646/7647
MAX65X
4-20mA
ICL644,
hp ms 7647
harris 7644
la 7646
764X
ICL764X
187Ly
7646
7647
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PDF
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