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    BD 678 Price and Stock

    ROHM Semiconductor BD67891MUV-E2

    FOR 3-PHASE DC BRUSHLESS MOTOR L
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    DigiKey BD67891MUV-E2 Reel 7,497 2,500
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    BD67891MUV-E2 Digi-Reel 7,497 1
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    BD67891MUV-E2 Cut Tape 7,497 1
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    Mouser Electronics BD67891MUV-E2 2,500
    • 1 $3.21
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    Verical BD67891MUV-E2 500 9
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    BD67891MUV-E2 50 45
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    Newark BD67891MUV-E2 Cut Tape 1
    • 1 $3.34
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    Quest Components BD67891MUV-E2 40
    • 1 $3.03
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    Avnet Asia BD67891MUV-E2 24 Weeks 2,500
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    Chip1Stop BD67891MUV-E2 Cut Tape 500
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    CoreStaff Co Ltd BD67891MUV-E2 50
    • 1 $2.806
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    STMicroelectronics BD678

    TRANS PNP DARL 60V 4A SOT32-3
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    DigiKey BD678 Tube 3,907 1
    • 1 $1.09
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    Avnet Americas BD678 Tube 14 Weeks 4,000
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    Mouser Electronics BD678 4,354
    • 1 $0.69
    • 10 $0.425
    • 100 $0.379
    • 1000 $0.293
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    Newark BD678 Bulk 11,137 1
    • 1 $0.531
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    STMicroelectronics BD678 4,354 1
    • 1 $0.68
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    Quest Components BD678 36
    • 1 $0.8325
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    TME BD678 545 1
    • 1 $0.622
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    ComSIT USA BD678 446
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    Avnet Silica BD678 79,450 15 Weeks 50
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    EBV Elektronik BD678 5,000 15 Weeks 50
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    American Bright Optoelectronics AB-D6780-V24-Q

    90-305VAC INPUT, 24VDC OUTPUT, 8
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    DigiKey AB-D6780-V24-Q Box 25 1
    • 1 $39.34
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    • 100 $30.4351
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    American Bright Optoelectronics AB-D6780-V12-Q

    90-305VAC INPUT, 12VDC OUTPUT, 8
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    DigiKey AB-D6780-V12-Q Box 25 1
    • 1 $39.34
    • 10 $39.34
    • 100 $30.4351
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    onsemi BD678

    TRANS PNP DARL 60V 4A TO126
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    DigiKey BD678 Bulk 2,000
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    BD 678 Datasheets (82)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BD678 Central Semiconductor Darlington Bipolar Transistor, PNP, 60V, TO-126, 3-Pin Original PDF
    BD678 Continental Device India NPN Plastic Power Transistors Original PDF
    BD678 Motorola Plastic Medium-Power Silicon PNP Darlingtons Original PDF
    BD678 On Semiconductor TRANS DARLINGTON PNP 60V 4A 3TO-225AA Original PDF
    BD678 Philips Semiconductors Silicon Darlington Power Transistor Original PDF
    BD678 STMicroelectronics COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Original PDF
    BD678 STMicroelectronics complementary darlington power transistor Original PDF
    BD678 STMicroelectronics COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR Original PDF
    BD678 STMicroelectronics Complementary power Darlington transistors Original PDF
    BD678 Transys Electronics PNP DARLIGNTON POWER SILICON TRANSISTORS Original PDF
    BD 678 Infineon Technologies TRANS DARLINGTON PNP 60V 4A 3TO-126 Scan PDF
    BD678 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BD678 Motorola Motorola Transistor Datasheets Scan PDF
    BD678 Motorola The European Selection Data Book 1976 Scan PDF
    BD678 Motorola European Master Selection Guide 1986 Scan PDF
    BD678 Mullard Quick Reference Guide 1977/78 Scan PDF
    BD678 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BD678 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BD678 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BD678 Unknown Transistor Replacements Scan PDF

    BD 678 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NT5TU32M16DG

    Abstract: Nanya NT5TU32M16DG NT5T NT5TU32M16CG-25C NT5TU32M16CG-3CI NT5TU32M16CG NT5TU32M16CG-25DI nt5tu64m8 B.a Date sheet 2007 DDR2-667
    Text: NT5TU128M4CE / NT5TU64M8CE / NT5TU32M16DG 512Mb DDR2 SDRAM Feature CAS Latency Frequency -37B/-37BI -3C/-3CI -25D/-25DI -25C/-25CI -BD -BD DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 DDR2-1066 4-4-4 5-5-5 6-6-6 5-5-5 7-7-7 6-6-6 tCK Avg. 266 333 400 400


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    PDF NT5TU128M4CE NT5TU64M8CE NT5TU32M16DG 512Mb -37B/-37BI -25D/-25DI -25C/-25CI DDR2-533 DDR2-667 DDR2-800 NT5TU32M16DG Nanya NT5TU32M16DG NT5T NT5TU32M16CG-25C NT5TU32M16CG-3CI NT5TU32M16CG NT5TU32M16CG-25DI nt5tu64m8 B.a Date sheet 2007 DDR2-667

    opto counter

    Abstract: B100 PB16HQ
    Text: BD-DEVNET USER’S GUIDE Form 750-990421 — April, 1999 43044 Business Park Drive, Temecula, CA 92590-3614 Phone: 800-321-OPTO 6786 or 951-695-3000 Fax: 800-832-OPTO (6786) or 951-695-2712 www.opto22.com Product Support Services: 800-TEK-OPTO (835-6786) or 951-695-3080


    Original
    PDF 800-321-OPTO 800-832-OPTO opto22 800-TEK-OPTO fr080 opto counter B100 PB16HQ

    Untitled

    Abstract: No abstract text available
    Text: BD Series Standard Profile DIP Switches Features/Benefits • Traditional full profile DIP switch • Extended actuator for easy actuation • Open bottom construction allows for Typical Applications • Address switch for industrial controls • Logic switching for computers and


    Original
    PDF

    NT5TU32M16DG

    Abstract: NT5TU32M16 Nanya NT5TU32M16DG RU 3C
    Text: NT5TU64M8DE / NT5TU32M16DG 512Mb DDR2 SDRAM Feature CAS Latency Frequency -3C/3CI* -AC/ACI* -BE* -BD* DDR2-667-CL5 (DDR2-800-CL5) (DDR2-1066-CL7) (DDR2-1066-CL6) Speed Bins Units Parameter Min. Max. Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency


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    PDF NT5TU64M8DE NT5TU32M16DG 512Mb DDR2-667-CL5) DDR2-800-CL5) DDR2-1066-CL7) DDR2-1066-CL6) NT5TU32M16DG NT5TU32M16 Nanya NT5TU32M16DG RU 3C

    N2TU51216

    Abstract: N2TU51280DE-BE
    Text: N2TU51280DE / N2TU51216DG Preliminary 512Mb DDR2 SDRAM Feature CAS Latency Frequency -3C -AC -BE -BD DDR2-667-CL5 (DDR2-800-CL5) (DDR2-1066-CL7) (DDR2-1066-CL6) Speed Bins Units Parameter Min. Max. Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency


    Original
    PDF N2TU51280DE N2TU51216DG 512Mb DDR2-667-CL5) DDR2-800-CL5) DDR2-1066-CL7) DDR2-1066-CL6) N2TU51216 N2TU51280DE-BE

    nt5tu32m16dg

    Abstract: NT5TU32M16DG-AC Nanya NT5TU32M16DG NT5TU32M16DG-BE NT5TU64M8DE NT5TU32M16DG-ACI NT5TU32M16DG-3C NT5TU64M8 NT5TU32M16DG AC NT5TU32M16DG-BD
    Text: NT5TU64M8DE / NT5TU32M16DG 512Mb DDR2 SDRAM Feature CAS Latency Frequency -3C/3CI* -AC/ACI* -BE* -BD* DDR2-667-CL5 (DDR2-800-CL5) (DDR2-1066-CL7) (DDR2-1066-CL6) Speed Bins Units Parameter Min. Max. Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency


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    PDF NT5TU64M8DE NT5TU32M16DG 512Mb DDR2-667-CL5) DDR2-800-CL5) DDR2-1066-CL7) DDR2-1066-CL6) x8/1066 nt5tu32m16dg NT5TU32M16DG-AC Nanya NT5TU32M16DG NT5TU32M16DG-BE NT5TU32M16DG-ACI NT5TU32M16DG-3C NT5TU64M8 NT5TU32M16DG AC NT5TU32M16DG-BD

    Untitled

    Abstract: No abstract text available
    Text: BB640. Silicon Variable Capacitance Diode  For Hyperband TV / VTR tuners, Bd l BB640 1 2 Type BB640 Package SOD323 Configuration single LS nH Marking 1.8 red S Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage


    Original
    PDF BB640. BB640 OD323 Nov-07-2002

    NT5TU128M8DE

    Abstract: NT5TU64M16DG nt5tu64m16dg-Bd NT5TU128M8DE-BD NT5TU256M4DE nt5tu64m NT5TU64M16 NT5TU64M16DG-3C NT5TU64M16DG-3CI NT5TU64M16DG-BE
    Text: NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG NT5TB256M4DE / NT5TB128M8DE / NT5TB64M16DG 1Gb DDR2 SDRAM Feature CAS Latency Frequency -37B/-37BI -3C/-3CI -AD/-ADI -AC/-ACI/-ACL -BE -BD DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 DDR2-1066 4-4-4 5-5-5 6-6-6


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    PDF NT5TU256M4DE NT5TU128M8DE NT5TU64M16DG NT5TB256M4DE NT5TB128M8DE NT5TB64M16DG -37B/-37BI DDR2-533 DDR2-667 DDR2-800 NT5TU64M16DG nt5tu64m16dg-Bd NT5TU128M8DE-BD nt5tu64m NT5TU64M16 NT5TU64M16DG-3C NT5TU64M16DG-3CI NT5TU64M16DG-BE

    NT5TU128M8GE

    Abstract: No abstract text available
    Text: NT5TU128M8GE / NT5TU64M16GG 1Gb DDR2 SDRAM Feature CAS Latency Frequency Speed Bins -3C/3CI -AC/ACI/ACL -BE -BD DDR2-667-CL5 (DDR2-800-CL5) (DDR2-1066-CL7) (DDR2-1066-CL6) Units Parameter Min. Max. Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency


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    PDF NT5TU128M8GE NT5TU64M16GG DDR2-667-CL5) DDR2-800-CL5) DDR2-1066-CL7) DDR2-1066-CL6)

    NT5TU64M16GG

    Abstract: NT5TU64M16GG-AC NT5TU128M8GE
    Text: NT5TU128M8GE / NT5TU64M16GG 1Gb DDR2 SDRAM Feature CAS Latency Frequency Speed Bins -3C/3CI -AC/ACI/ACL -BE -BD DDR2-667-CL5 (DDR2-800-CL5) (DDR2-1066-CL7) (DDR2-1066-CL6) Units Parameter Min. Max. Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency


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    PDF NT5TU128M8GE NT5TU64M16GG DDR2-667-CL5) DDR2-800-CL5) DDR2-1066-CL7) DDR2-1066-CL6) NT5TU64M16GG NT5TU64M16GG-AC

    BUX 127

    Abstract: bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140
    Text: POWER DISCRETE DEVICES ALPHA • NUMERICAL INDEX Typ« BD 135 BD 136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 175 BD 176 BD 177 BD 178 BO 179 BD 180 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 BD 239 BD 239A BD 239B BD 239C BD 240 BD 240A BD 240B


    OCR Scan
    PDF BD244B BD379 BD380 BD434 BD435 BD440 BD681 BD682 BD712 BD905 BUX 127 bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140

    bow 94c

    Abstract: box 53c BOX 53C IC CSI 24C bdx 679 BD NPN transistors bd* to-220 bdx 94c TO-126 BD PNP
    Text: POWER TRANSISTORS — > o m o _u c E UJ IL o o ur> £a an d < < > X CO _o E ro BD 675A BD 676A BD 677 BD 678 BD 677A BD 678A BD 679 BD 680 BD 679A BD 680A BD 681 BD 682 BDW 23* BDW 24* BDW 23A* BDW 24A* BDW 23B* BDW 24B* BDW 23C* BDW 24C* BDW 93* BDW 94*


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    PDF O-126 bow 94c box 53c BOX 53C IC CSI 24C bdx 679 BD NPN transistors bd* to-220 bdx 94c TO-126 BD PNP

    transistor BD 680

    Abstract: bo680 B0678 BD878 BO676 bo67 D239 TRANSISTOR BD676 Q62702-D241 Q62702-D243
    Text: 2SC 3> m fl23SbüS QOQMBT'i 3 MSIEfi PNP Silicon Darlington Transistors T-33- •31 BD 676 BD 678 BD 680 SIEMENS AKTIENGESELLSCHAF143" Epibase power darlington transistors 40 W BD 676, BD 678, and BD 680 are monolithic PNP silicon epibase power darlington transistors


    OCR Scan
    PDF 0235bQ5 T-33-31 676/BD BD676, BD678 BD680 BO676, BD678, transistor BD 680 bo680 B0678 BD878 BO676 bo67 D239 TRANSISTOR BD676 Q62702-D241 Q62702-D243

    B0680

    Abstract: bd 682 0477A2 her32 bd676 Bd 676/BD 675 BD677 BD 678 BD680 BD681
    Text: BD 676 'BD 678 -BD 680 -BD 682 'W Silizium-PNP-Darlington-Leistungstransistoren Silicon PNP Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-output stages Besondere Merkmale: Features: • Sehr hohe Stromverstärkung • Very high current transfer ratio


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    PDF 682are mentarytoBD675 BD677 BD679 BD681 B0680 bd 682 0477A2 her32 bd676 Bd 676/BD 675 BD 678 BD680 BD681

    transistor BD 677

    Abstract: BD 675 BD675 677d
    Text: ES C T> m ÔEBSbOS 00043^5 b H S I E 6 NPN Silicon Darlington Transistors SIEMENS AKTIENGESELLSCHAF Î5C °*395 T-33-29 ~ BD 675 BD 677 D BD 679 Epibase power darlington transistors 40 W BD 675, BD 677, and BD 679 are monolithic NPN silicon epibase power darlington


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    PDF T-33-29 BD679 a23SbOS 00043RS BD675, transistor BD 677 BD 675 BD675 677d

    BD 677

    Abstract: BD 675 bd 679 BD NPN transistors bd675 BD677A K 679 M 675 F bd679a darlington bd
    Text: BD 675,A BD 6 7 7 ,A BD 679,A NPN SILICON DARLINGTON TRANSISTORS, EPITAXIAL BASE TR A N S IS TO R S D A R L IN G T O N S IL IC IU M NP N , B A S E E P IT A X IE E Compì, of BD 676, A ; BD 678, A ; BD 680, A PRELIM INARY DATA N O T IC E PR E L IM IN A IR E


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    PDF O-126- BD 677 BD 675 bd 679 BD NPN transistors bd675 BD677A K 679 M 675 F bd679a darlington bd

    BD681

    Abstract: bd681 TRANSISTOR transistor bd681 NPN Transistor VCEO 80V 100V DARLINGTON BD679A BD677A A1679 BD675A 679A BD677A FAIRCHILD SEMICONDUCTOR
    Text: BD675A/677A/679A/681 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER DARLINGTON TR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD676A, BD 678A, BD 680A and BD 682 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 45 V


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    PDF BD675A/677A/679A/681 BD676A, BD678A, BD680A BD682 BD675A BD677A BD679A BD681 BD681 bd681 TRANSISTOR transistor bd681 NPN Transistor VCEO 80V 100V DARLINGTON BD679A BD677A A1679 BD675A 679A BD677A FAIRCHILD SEMICONDUCTOR

    BD - 100 V

    Abstract: transistor BD 522 BD 680 vertical tv deflexion bd 676 bd676 bd678 darlington bd deflexion LB 676
    Text: DU D/D, M PNP S ILIC O N D A R L IN G T O N TR A N S IS TO R S , E P IT A X IA L BASE BD 678. A TRANSISTORS DARLIN G TO N SILIC IU M PNP, BASE EPITAXIES BD 680,' A Compì, of BD 67 5, A ; BD 67 7, A ; BD 67 9, A P R E L IM IN A R Y D A TA NOTICE P R ELIM IN A IR E


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    PDF O-126 BD - 100 V transistor BD 522 BD 680 vertical tv deflexion bd 676 bd676 bd678 darlington bd deflexion LB 676

    BO677

    Abstract: transistor BD 677 bo679 B0677 BD677 thermal d242 BD 677 BC 677 Q62702-D240 Q62702-D242
    Text: ESC D • 023SbOS 0004315 b ■ S I E G NPN Silicon Darlington Transistors SIEMENS A K T I E N G E SE LL SC H AF Î5 C T-33-29 °*3 9 5 ~ BO 675 BD 677 BD 679 D Epibase power darlington transistors 40 W BD 675, BD 677, and BD 679 are monolithic NPN silicon epibase power darlington


    OCR Scan
    PDF 023SbOS T-33-29 BD676, BD677 a23Sb0S ooo43Ra BD675 AKTIENGESELLSCHAF-BD679 BD67S, BO677 transistor BD 677 bo679 B0677 BD677 thermal d242 BD 677 BC 677 Q62702-D240 Q62702-D242

    BD682

    Abstract: BD676A BD678A B0680 BD680A B0682 transistor Bd682 BD675A BD677A BD679A
    Text: BD676A/678A/680A/682 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER DARLINGTON TR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD675A, BD 677A, BD 679A and BD681 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage


    OCR Scan
    PDF BD676A/678A/680A/682 BD675A, BD677A, BD679A BD681 BD676A BD678A BD680A BD682 BD682 BD676A BD678A B0680 BD680A B0682 transistor Bd682 BD675A BD677A

    BD699

    Abstract: BD595 N6034 bd697 BD609 BD588 BD587 bd561 MJE34 pnp BD698
    Text: N PN PN P l e = 3.0 A. 2N4921 2N4918 v C EO V olts Hf e @ 'c Am p V C E sat @ 'C V o lts Am p fT MHz PD Watts Case 40 20/100 0.5 0.6 1.0 3.0 30 77 M JE 3 1 M JE 3 2 40 25/- 1.0 1.2 3.0 3.0 40 77R BD 17 5 BD 17 6 45 15/— 1.0 0.8 1.0 3.0 30 77 BD 57 5 BD 5 7 6


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    PDF 2N4921 2N4918 MJE31 BD175 BD575 BD576 BD177 2N4922 2N4919 MJE31A BD699 BD595 N6034 bd697 BD609 BD588 BD587 bd561 MJE34 pnp BD698

    BD 139 N

    Abstract: TOP-66 BD677N B0536 BD 139 140 B0680 BD139N BD139 SOT PL b0436
    Text: Inventory o f discrete standard Types 9.1. Transistors Type P = PNP (N = NPN) Collector base reverse voltage V'oso ; v (V ces); BD 136 BD 137 Current gainbandw idth product / c; A fT; MHz P -45 -1 .5 50 N 60 -6 0 80 1.5 -1 .5 1.5 -80 45 -1 .5 2 50 50 >50


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    PDF OT-32 BD 139 N TOP-66 BD677N B0536 BD 139 140 B0680 BD139N BD139 SOT PL b0436

    Untitled

    Abstract: No abstract text available
    Text: BD676A/678A/680A/682 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER DARLINGTON TR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD675A, BD677A, BD 679A and BD681 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit - 45 V : BD678A


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    PDF BD676A/678A/680A/682 BD675A, BD677A, BD681 BD678A BD680A BD676A BD682

    ATMG

    Abstract: plc orsi
    Text: OftAHIM MADE IN THIRD AMOLE PROJECTION THIS DRAWING IS UNPUBLISHED. COPWMHT 19 RELEASED FOR PUBLICATION ,79 0VAMP INCORPORATO. ALL INTERNATIONALRIGHTSRESERVED. LOC Dlèf ¿3 BD 39 PfF ¿ONE LTR 6 Jy HOD REVISIONS DATE APPO DESCRIPTION REDRAWN AM REV PER ECN BD4783


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    PDF 544-MAX S/2/90 1710S ATMG plc orsi