PG15FBUSC
Abstract: No abstract text available
Text: SEMICONDUCTOR PG15FBUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking CATHODE MARK 2 BD 1 0 1 2 1 No. Item Marking Description Device Mark BD PG15FBUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character]
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PG15FBUSC
PG15FBUSC
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KRX204E
Abstract: No abstract text available
Text: SEMICONDUCTOR KRX204E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking BD 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BD KRX204E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRX204E
KRX204E
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KRX204U
Abstract: No abstract text available
Text: SEMICONDUCTOR KRX204U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking BD 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BD KRX204U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRX204U
KRX204U
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800TD
Abstract: FPT-48P-M19 FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-3E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , and 48-ball FBGA packages.
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DS05-20871-3E
MBM29SL800TD/BD-10/12
MBM29SL800TD/BD
48-pin
48-ball
MBM29SL800TD/MBM29SL800BD
800TD
FPT-48P-M19
FPT-48P-M20
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FPT-48P-M19
Abstract: FPT-48P-M20 2 PIN DIODE MARKED BD BD75
Text: MBM29PL160TD/BD-75/90 Data Sheet Retired Product MBM29PL160TD/BD -75/90 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications
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MBM29PL160TD/BD-75/90
MBM29PL160TD/BD
DS05-20872-4E
F0306
ProductDS05-20872-4E
FPT-48P-M19
FPT-48P-M20
2 PIN DIODE MARKED BD
BD75
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FPT-48P-M19
Abstract: FPT-48P-M20 12PW 38
Text: MBM29SL800TD/BD-10/12 Data Sheet Retired Product MBM29SL800TD/BD -10/12 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications
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MBM29SL800TD/BD-10/12
MBM29SL800TD/BD
DS05-20871-6E
F0210
ProductDS05-20871-6E
FPT-48P-M19
FPT-48P-M20
12PW 38
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1820-1940
Abstract: MBM29DL161BD-90PFTN MBM29DL163TD-90PFTN BGA-48P-M13 FPT-48P-M19 FPT-48P-M20 mbm29dl16xtd
Text: MBM29DL16XTD/BD-70/90 Data Sheet Retired Product MBM29DL16XTD/BD -70/90 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications
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MBM29DL16XTD/BD-70/90
MBM29DL16XTD/BD
DS05-20874-8E
F0303
ProductDS05-20874-8E
1820-1940
MBM29DL161BD-90PFTN
MBM29DL163TD-90PFTN
BGA-48P-M13
FPT-48P-M19
FPT-48P-M20
mbm29dl16xtd
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FPT-48P-M19
Abstract: FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball
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DS05-20871-5E
MBM29SL800TD/BD-10/12
MBM29SL800TD/BD
48-pin
48-ball
48-ball
MBM29SL800TD/MBM29SL800BD
F0210
FPT-48P-M19
FPT-48P-M20
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-4E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball
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DS05-20871-4E
MBM29SL800TD/BD-10/12
MBM29SL800TD/BD
48-pin
48-ball
48-ball
MBM29SL800TD/MBM29SL800BD
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball
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DS05-20871-5E
MBM29SL800TD/BD-10/12
MBM29SL800TD/BD
48-pin
48-ball
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FPT-48P-M19
Abstract: FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20872-3E PAGE MODE FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29PL160TD/BD-75/90 • DESCRIPTION The MBM29PL160TD/BD is a 16 M-bit, 3.0 V-only Flash memory organized as 2 M bytes of 8 bits each or 1M words of 16 bits each. The MBM29PL160TD/BD is offered in a 48-pin TSOP (1), and 44-pin SOP packages. The
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DS05-20872-3E
MBM29PL160TD/BD-75/90
MBM29PL160TD/BD
48-pin
44-pin
MBM29PL160TD/160BD
F0306
FPT-48P-M19
FPT-48P-M20
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resistance 47k ohm
Abstract: No abstract text available
Text: FIXED CARBON FILM RESISTORS KAMAYA OHM RD ¥Features 1. Three sizes are available : 1/6W ~ 1/2W. 2. Structure suitable for auto-insertion processing. 3. Stability Class : 5% ¥Dimensions Bd L H BD H Style RD1/6 RD1/4S RD1/4 RD1/2S Unit : mm L D H d *Unit weight/pc.
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108mg
217mg
1212h
resistance 47k ohm
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Fixed Carbon Film Resistors
Abstract: No abstract text available
Text: FIXED CARBON FILM RESISTORS KAMAYA OHM RD •Features 1. Three sizes are available : 1/6W ~ 1/2W. 2. Structure suitable for auto-insertion processing. 3. Stability Class : 5% •Dimensions Bd L H BD H Unit : mm Style RD1/6 RD1/4S RD1/4 RD1/2S L D H d *Unit weight/pc.
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108mg
217mg
R100M
1212h
Fixed Carbon Film Resistors
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Untitled
Abstract: No abstract text available
Text: FIXED CARBON FILM RESISTORS KAMAYA OHM RD ¥Features 1. Three sizes are available : 1/6W ~ 1/2W. 2. Structure suitable for auto-insertion processing. 3. Stability Class : 5% ¥Dimensions Bd L H BD H Style RD1/6 RD1/4S RD1/4 RD1/2S Unit : mm L D H d *Unit weight/pc.
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108mg
217mg
1212h
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D 1703
Abstract: No abstract text available
Text: M IC D N D U C T D R i MMBD1701 M M BD 1703 M M BD 1704 M M BD 1705 SOT-23 MARKING 85 M M BD 1701A 87 M M BD 1703A 88 M M BD 1704A 89 M M BD 1705A / 1703/A / 1704/A / 1705/A MMBD1701/A / 1703/A / 1704/A / 1705/A 85A 87A 88A 89A High Conductance Low Leakage Diode
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MMBD1701/A
MMBD1701/A
1703/A
1704/A
1705/A
OT-23
MMBD1701
D 1703
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bd 825 10
Abstract: SIEMENS BD 827-10 D1305 ti 829 IC 8256 bd 827-10 d1310 Q62702-D1305 BD829 D1113
Text: sie j> ö?3Sbci5 oomflib bbfi m s i E G m SIEMENS AKTIEN6ESELLSCHAF SIEM EN S BD 825 . BD 829 NPN Silicon AF Transistors • • • • High current gain High collector current Low collector-emitter saturation voltage Complementary types: BD 826, BD 828,
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Q62702-D1135
Q62702-D149
Q62702-D1213
Q62702-D60
Q62702-D1305
Q62702-D1306
Q62702-D1113
Q62702-D1309
Q62702-D1310
Q62702-D1311
bd 825 10
SIEMENS BD 827-10
D1305
ti 829
IC 8256
bd 827-10
d1310
BD829
D1113
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR tm MMBD1401 /1403 /1404 /1405 MMBD1401 M M BD 1403 MARKING 29 M M BD 1404 32 M M BD 1405 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum RatitlQS TA = 25°C unless otherwise noted Parameter Symbol Value Units W|V
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MMBD1401
MMBD1401
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B 1403 N
Abstract: No abstract text available
Text: M lC O N D U C T O R tm MMBD1401 /1403 /1404 /1405 MARKING SOT-23 MMBD1401 M M BD 1403 29 32 M M BD 1404 M M BD 1405 33 34 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Symbol
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MMBD1401
OT-23
B 1403 N
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Untitled
Abstract: No abstract text available
Text: MOTO!ROILA Order this document BY MMBD110T1/D SEMICONDUCTOR TECHNICAL DATA M M BD 110T1 M M BD 330T1 M M BD 770T1 Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high-efficiency UHF and VHF detector applications. Readily available to many other fast switching RF
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MMBD110T1/D
OT-323/SC-70
110T1
330T1
770T1
19A-02,
OT-323/SC-70
MMBD110T1
MMBD330T1
MMBD770T1
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transistor bd 126
Abstract: TRANSISTOR BD 139 transistor BD 135 BD139 TRANSISTOR BC 137 TRANSISTOR BD 137 BD 139 N bD 106 transistor TRANSISTOR BC 136 transistor bd 711
Text: TELEFUNKEN ELECTRONIC IN electronic 1?E D • Ô^SQO^b O D Q TB 'îS BD 135 • BD 137 • BD 139 Creativeledinotoe*^ T -^ -O S * Silicon NPN Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available
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DIN41869
DIN125A
15A3DIN
transistor bd 126
TRANSISTOR BD 139
transistor BD 135
BD139
TRANSISTOR BC 137
TRANSISTOR BD 137
BD 139 N
bD 106 transistor
TRANSISTOR BC 136
transistor bd 711
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4148SE
Abstract: BD4148 MBD4148 4148CA 4148C BD120 marking 5c diode "MARKING 5H"
Text: M ICDNDUCTOR ! MMBD4148/SE/CC/CA JH CONNECTION 4 1 ^ S O T -23 M M BD 4148 M M B D 4148C C [IT 3 • 4148SE \ * * * * * *2J 5H H] DIAGRAMS j 1 2 NC 3 I 4148C C MARKING 5H M M BD 4148C A D6 D5 M M BD 4148SE D4 1 2 3 I 4148C A High Conductance Ultra Fast Diode
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MBD4148/SE/CC/CA
MMBD4148/SE/CC/CA
4148SE
4148C
BD1201-1205
BD4148
MBD4148
4148CA
BD120
marking 5c diode
"MARKING 5H"
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transistors BC 543
Abstract: BD 104 NPN BC827 BD 104 transistors d 826 bc 734 82s83 BC 828 BD 541 bc825
Text: SIE P SIEMENS • ÖZBSbGS 0041021 TS5 « S I E G SIEMENS AKTIENGESELLSCHAF - F s s - n PNP Silicon AF Transistors • • • • BD 826 . BD 830 High current gain High collector current Low collector-emitter saturation voltage Complementary types: BC 825, BC 827,
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Q62702-D1303
Q62702-D13Q4
Q62702-D1179
Q62702-D1257
Q62702-D1307
Q62702-D1308
Q62702-D61
Q62702-D1312
Q62702-D1313
Q62702-D1238
transistors BC 543
BD 104 NPN
BC827
BD 104
transistors d 826
bc 734
82s83
BC 828
BD 541
bc825
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Untitled
Abstract: No abstract text available
Text: WRP SERIES POWER TYPE SILICON COATED WIRE WOUND RESISTORS FLAME PROOF Marking: BD DIMENSION mm (inch) Body Lead Wire Tolerance Style BL ± 1 BD ±0.5 LL±1 (% ) L D ± 0 .0 5 Resistance Range 1 11 ( 433) 4.5 (.177) 3 0 (1 .1 8 1 ) 0 .8 (0 3 1 ) 0 .0 5 0 « 5 0 0
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TRANSISTOR BC 136
Abstract: transistor BD 140 transistor bd 126 BD 140 transistor 16BD136 transistor bc 138 TRANSISTOR 138 TRANSISTOR BD 136 BD 139 transistor transistor bd 711
Text: TELEFUNKEN ELECTRONIC m ilFW K lIM electronic 17E D • fl^HDD'ib DQ’O TBR^ IALCÛ BD 136 BD 138 Ibd 140 Ci*tirtTtehnotoûte» T-33-17 Silicon PNP Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available
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T-33-17
DIN125A
15A3DIN
TRANSISTOR BC 136
transistor BD 140
transistor bd 126
BD 140 transistor
16BD136
transistor bc 138
TRANSISTOR 138
TRANSISTOR BD 136
BD 139 transistor
transistor bd 711
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