BD135 INPUT IMPEDANCE Search Results

BD135 INPUT IMPEDANCE Result Highlights (5)

Part	Manufacturer	Description
MHM411-21	Murata Manufacturing Co Ltd	Ionizer Module, 100-120VAC-input, Negative Ion
DCL541A01	Toshiba Electronic Devices & Storage Corporation	Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: Low / Input disable
DCL541B01	Toshiba Electronic Devices & Storage Corporation	Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: High / Input disable
DCM341B01	Toshiba Electronic Devices & Storage Corporation	Digital Isolator / VDD=3.0~5.5V / 50Mbps / 4 channel(F:R=3:1) / Default Output Logic: High / Input disable / AEC-Q100
DCM341A01	Toshiba Electronic Devices & Storage Corporation	Digital Isolator / VDD=3.0~5.5V / 50Mbps / 4 channel(F:R=3:1) / Default Output Logic: Low / Input disable / AEC-Q100

BD135 INPUT IMPEDANCE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
bd135 equivalent Abstract: TP3069 motorola rf device NF 935 bd135 input impedance transistor tp3069 Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line RF Pow er Transistor The TP3069 is designed for cellular radio base station amplifiers up to 960 MHz. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. The TP3069 also features	OCR Scan	TP3069 TP3069 bd135 equivalent motorola rf device NF 935 bd135 input impedance transistor tp3069	PDF
bd135 equivalent Abstract: irt 840 1509-50 TP3062 J890 bd135 N rBE BD135 BD135 35 W 960 MHz RF POWER TRANSISTOR NPN BD135 TRANSISTOR Text: MOTOROLA SC XSTRS/R F b=)E D b3b7254 D1GDT0G 172 noT b MOTOROLA I SEMICONDUCTOR • ■ TECHNICAL DATA The RF Line U H F P o w er Tkransistor The TP3062 is designed for 960 MHz mobile base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold	OCR Scan	b3b7254 TP3062 TP3062 bd135 equivalent irt 840 1509-50 J890 bd135 N rBE BD135 BD135 35 W 960 MHz RF POWER TRANSISTOR NPN BD135 TRANSISTOR	PDF
bd135 equivalent Abstract: bd135 input impedance rBE BD135 resistor 2,2 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line TP3062 UHF Power Thransistor The TP3062 is designed for 960 MHz mobile base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. Including	OCR Scan	TP3062 TP3062 bd135 equivalent bd135 input impedance rBE BD135 resistor 2,2	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics Output Power = 50 Watts	Original	MRF6414 MRF6414 DL110/D)	PDF
40 pin J004 Abstract: transistor bd135 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor The MRF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and	OCR Scan	MRF6402 1N4148 BD135 40 pin J004 transistor bd135	PDF
equivalent transistor K 2767 Abstract: transistor K 2767 bd135 equivalent transistor bd135 Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA TP3019S The RF Line UHF Power Transistor The TP3019S is designed for 24 V common emitter base station amplifiers. Operating in the 820-960 MHz bandwidth, the device has been specifically designed for use in analog and digital GSM systems.	OCR Scan	TP3019S TP3019S equivalent transistor K 2767 transistor K 2767 bd135 equivalent transistor bd135	PDF
si diode 1N4007 Abstract: MRF841 MOTOROLA TRANSISTOR 935 150 watts power amplifier layout Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • • • • 50 W, 960 MHz RF POWER TRANSISTOR NPN SILICON	OCR Scan	MRF6414 MRF6414PHT/D MRF6414 MRF8414 si diode 1N4007 MRF841 MOTOROLA TRANSISTOR 935 150 watts power amplifier layout	PDF
150 j47 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Pow er Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics Output Power = 50 Watts	OCR Scan	MRF6414 MRF6414 VcEO970 150 j47	PDF
transistor bd135 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3032 The RF Line NPN Silicon RF Power TVansistor The TP3032 is designed for 26 volts, common emitter, 960 MHz base station amplifiers, for use in analog and digital systems. • 21 W, 960 MHz RF POWER TRANSISTOR NPN SILICON	OCR Scan	TP3032 TP3032 BD135 transistor bd135	PDF
si diode 1N4007 Abstract: motorola rf device MOTOROLA TRANSISTOR 935 bd135 equivalent Diode 1N4007 TP3064 Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line RF Power Transistor The TP3064 is designed for 960 MHz mobile base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. The	OCR Scan	TP3064 si diode 1N4007 motorola rf device MOTOROLA TRANSISTOR 935 bd135 equivalent Diode 1N4007	PDF
MRF6402 Abstract: transistor SMD J9 transistor J9 TRANSISTOR Bd135 diode 1n4148 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF6402 The RF Line NPN Silicon RF Power Transistor The MRF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and	OCR Scan	MRF6402 MRF6402 1N4148 BD135 transistor SMD J9 transistor J9 TRANSISTOR Bd135 diode 1n4148	PDF
1206 transistor Abstract: chip resistor 1206 smd transistor p1 bd135 equivalent RF NPN POWER TRANSISTOR 3 GHZ 200 watts 22 pf trimmer capacitor transistor bd135 8 PIN SMD IC 2671 Equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power TVansistor The MRF6406 is designed for 1.88 GHz Personal Communications Network PCN base station applications. For ease of design, this transistor has an internally matched input. •	OCR Scan	MRF6406 1206 transistor chip resistor 1206 smd transistor p1 bd135 equivalent RF NPN POWER TRANSISTOR 3 GHZ 200 watts 22 pf trimmer capacitor transistor bd135 8 PIN SMD IC 2671 Equivalent	PDF
43 JO smd Abstract: 1c smd transistor transistor bd135 chip PCN resistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6402 The M RF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast resistors, gold m etallizations and offers a high degree of reliability and	OCR Scan	MRF6402 MRF6402 1N4148 BD135 43 JO smd 1c smd transistor transistor bd135 chip PCN resistor	PDF
bd135 equivalent Abstract: transistor bd135 motorola 1N4148 microstrip resistor microstrip line Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor The TP3021 is designed for 24 V com mon em itter base station amplifiers. Operating in the 8 2 0 -9 6 0 MHz bandwidth, it has been specifically designed for use in analog and digital GSM system s as a medium power output device.	OCR Scan	TP3021 BD135 bd135 equivalent transistor bd135 motorola 1N4148 microstrip resistor microstrip line	PDF

transistor bd135 Abstract: TRANSISTOR 4148 Diode 1N 4148 transistor J9 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The MRF6402 is designed for 1.8 GHz Personal Com m unications Network PCN base stations applications. It incorporates high value em itter ballast re s is to rs , gold m e ta lliz a tio n s and o ffe rs a high de g re e of re lia b ility and	OCR Scan	MRF6402 BD135 transistor bd135 TRANSISTOR 4148 Diode 1N 4148 transistor J9	PDF
TP5040 Abstract: ATC100A4R7DP50 100A120D ATC100A470JP50 ATC100A101 ATC100A470 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP5040 The RF Line UH F P o w e r T ra n sisto r 40 W — 380 to 512 M Hz UHF POWER TRANSISTOR NPN SILICON . . . designed for 24 Volt UHF large-signal common emitter am plifier applications in industrial and commercial FM equipment operating in the 380 to 512 MHz frequency	OCR Scan	TP5040 0A470JP50 ATC100A4R7DP50 100A5R6DP50 ATC100A150DP50 100A120DP50 ATC100A101KP50 1N4007 BD135 TP5040 100A120D ATC100A470JP50 ATC100A101 ATC100A470	PDF
cito RF Abstract: No abstract text available Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA TP3040 The RF Line UHF Power Transistor 40 W — 960 MHz UHF POWER TRANSISTOR NPN SILICON T h e T P 3040 is s p e c ific a lly d e s ig n e d fo r o p e ra tio n as th e fin a l s ta g e in 960 M H z m o b ile ba s e s ta tio n a m p lifie r s . U tiliz a tio n o f e m itte r b a lla s t r e s is to rs a n d g o ld m e ta lliz a tio n	OCR Scan	TP3040 1N4148 BD135 cito RF	PDF
Philips Application Note ECO6907 Abstract: AN98032 BD135 CURVES ECO7703 BD136 SMD TRANSISTOR COE82101 bd136 equivalent mosfet HF amplifier AN98030 HF power amplifier blf177 Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 3 Power amplifier design POWER AMPLIFIER DESIGN NOTE TO SECTION 3 3.1 Classes of operation and biasing 3.1.1 For clarity in equations, identifiers such as R1, +jB2, −jX3 in drawings are written as	Original		PDF
CHIP DIODE m7 Abstract: D2-1N4148 variable capacitor 0.4 motorola 1N4148 1N4148 TP3012 motorola rf Power Transistor 21180 chip trimmer capacitor 1.7 capacitor 10 nf Text: MOTOROLA SC XSTRS/R F 4bE b3b7254 » 0 Q1 S 2Ü 1 fi I MOTb "P 3 3 -Û 7 ' MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3012 The RF Line U H F P o w e r T ra n s is to r T he TP3012 is d e sig n e d fo r 900 M H z m o b ile s ta tio n s in both a n a lo g a n d d ig ita l a p p li	OCR Scan	b3b72S4 TP3012 Contin48 T-33-07 CHIP DIODE m7 D2-1N4148 variable capacitor 0.4 motorola 1N4148 1N4148 TP3012 motorola rf Power Transistor 21180 chip trimmer capacitor 1.7 capacitor 10 nf	PDF
Motorola transistor 9410 Abstract: 91 c6 bd135 equivalent icer capacitor motorola 1N4148 TP3032 1N4148 BD135 NT 407 F TRANSISTOR Text: MOTOROLA Order this document by TP3032/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TP3032 The TP3032 is designed for 26 volts, common emitter, 960 MHz base station amplifiers, for use in analog and digital systems. • Specified 26 Volts, 960 MHz Characteristics	Original	TP3032/D TP3032 TP3032 TP3032/D* Motorola transistor 9410 91 c6 bd135 equivalent icer capacitor motorola 1N4148 1N4148 BD135 NT 407 F TRANSISTOR	PDF
transistor BD135 Abstract: bd135 equivalent motorola rf Power Transistor 1N4148 BD135 TP3021 transistor c1 Text: M O TOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line U H F Pow er Transistor The TP3021 is designed for 24 V common emitter base station amplifiers. Operating in the 8 2 0 -9 6 0 M H z bandwidth, it has been specifically designed for use in analog and digital G SM system s a s a medium power output device.	OCR Scan	TP3021 TP3021 b3b72S4 01Q73M7 b3b7254 transistor BD135 bd135 equivalent motorola rf Power Transistor 1N4148 BD135 transistor c1	PDF
transistor rf m 1104 Abstract: MOTOROLA TRANSISTOR 935 Text: MOTOROLA Order this document by MRF6414/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics	OCR Scan	MRF6414/D MRF6414 MRF6414PHT/D MRF6414 2PHX34665Q-0 transistor rf m 1104 MOTOROLA TRANSISTOR 935	PDF
transistor fn 155 Abstract: motorola rf device transistors equivalent 0912 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line MRF15060 MRF15060S RF Power Bipolar Transistors Designed for broadband commercial and industrial applications at frequen cies from 1400 to 1600 MHz. The high gain and broadband performance of	OCR Scan	IS22I MRF15060 MRF15060S transistor fn 155 motorola rf device transistors equivalent 0912	PDF
SU 179 transistor Abstract: transistors equivalent 0912 bd135 equivalent IrL 1540 N 1000 watts class d amplifier schematic bd136 equivalent IrL 1540 g RF NPN POWER TRANSISTOR 3 GHZ 200 watts Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line M RF15060 M RF15060S RF Pow er Bipolar Transistors Designed for broadband commercial and industrial applications at frequen cies from 1400 to 1600 MHz. The high gain and broadband performance of	OCR Scan	IS12I IS22I MRF15060 MRF15060S SU 179 transistor transistors equivalent 0912 bd135 equivalent IrL 1540 N 1000 watts class d amplifier schematic bd136 equivalent IrL 1540 g RF NPN POWER TRANSISTOR 3 GHZ 200 watts	PDF

BD135 INPUT IMPEDANCE Search Results

BD135 INPUT IMPEDANCE Result Highlights (5)

BD135 INPUT IMPEDANCE Datasheets Context Search

bd135 equivalent

bd135 equivalent

bd135 equivalent

Untitled

40 pin J004

equivalent transistor K 2767

si diode 1N4007

150 j47

transistor bd135

si diode 1N4007

MRF6402

1206 transistor

43 JO smd

bd135 equivalent

transistor bd135

TP5040

cito RF

Philips Application Note ECO6907

CHIP DIODE m7

Motorola transistor 9410

transistor BD135

transistor rf m 1104

transistor fn 155

SU 179 transistor