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    BD240C TRANSISTOR Search Results

    BD240C TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BD240C TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BD240C

    Abstract: BD239C bd240c Transistor
    Text: BD239C BD240C COMPLEMENTARY SILICON POWER TRANSISTORS • BD239C IS ST PREFERRED SALESTYPE DESCRIPTION The BD239C is a silicon epitaxial-base NPN transistor mounted in Jedec TO-220 plastic package. It is inteded for use in medium power linear and switching applications.


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    BD239C BD240C BD239C O-220 BD240C. O-220 BD240C bd240c Transistor PDF

    BD239C

    Abstract: BD240C
    Text: BD239C BD240C COMPLEMENTARY SILICON POWER TRANSISTORS • BD239C IS SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BD239C is a silicon epitaxial-base NPN transistor mounted in Jedec TO-220 plastic package. It is inteded for use in medium power linear and


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    BD239C BD240C BD239C O-220 BD240C. O-220 BD240C PDF

    BD240

    Abstract: BD240A BD240B BD240C BD241 power semiconductor 1973
    Text: BD240, BD240A, BD240B, BD240C PNP SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK ● JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD241 Series TO-220 PACKAGE TOP VIEW ● 30 W at 25°C Case Temperature


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    BD240, BD240A, BD240B, BD240C BD241 O-220 BD240 BD240A BD240B BD240 BD240A BD240B BD240C power semiconductor 1973 PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BD239, BD239A, BD239B, BD239C BD240, BD240A, BD240B, BD240C TO-220 Plastic Package BD239, 239A, 239B, 239C NPN PLASTIC POWER TRANSISTORS BD240, 240A, 240B, 240C PNP PLASTIC POWER TRANSISTORS


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    BD239, BD239A, BD239B, BD239C BD240, BD240A, BD240B, BD240C O-220 PDF

    BD239B

    Abstract: BD239C BD240 BD240A BD240B BD240C BD239 BD239A
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD239, BD239A, BD239B, BD239C BD240, BD240A, BD240B, BD240C BD239, 239A, 239B, 239C NPN PLASTIC POWER TRANSISTORS BD240, 240A, 240B, 240C PNP PLASTIC POWER TRANSISTORS


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    O-220 BD239, BD239A, BD239B, BD239C BD240, BD240A, BD240B, BD240C BD239B BD239C BD240 BD240A BD240B BD240C BD239 BD239A PDF

    BD240

    Abstract: No abstract text available
    Text: BD240/A/B/C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-220 • Complement to BD239/A/B/C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Emitter Voltage : BD240 :BD240A :BD240B :BD240C Collector Emitter Voltage : BD240


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    BD240/A/B/C BD239/A/B/C O-220 BD240 BD240A BD240B BD240C BD240 PDF

    BD240

    Abstract: BD240A BD240B BD240C BD241
    Text: BD240, BD240A, BD240B, BD240C PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD241 Series ● 30 W at 25°C Case Temperature ● 2 A Continuous Collector Current B 1 ● 4 A Peak Collector Current C 2 ● Customer-Specified Selections Available


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    BD240, BD240A, BD240B, BD240C BD241 O-220 BD240A BD240B BD240 BD240 BD240A BD240B BD240C PDF

    BD240

    Abstract: BD240A BD240B BD240C BD241
    Text: BD240, BD240A, BD240B, BD240C PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD241 Series ● 30 W at 25°C Case Temperature ● 2 A Continuous Collector Current B 1 ● 4 A Peak Collector Current C 2 ● Customer-Specified Selections Available


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    BD240, BD240A, BD240B, BD240C BD241 O-220 BD240A BD240B BD240 BD240 BD240A BD240B BD240C PDF

    Untitled

    Abstract: No abstract text available
    Text: BD240, BD240A, BD240B, BD240C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD241 Series TO-220 PACKAGE TOP VIEW 30 W at 25°C Case Temperature 2 A Continuous Collector Current 4 A Peak Collector Current B 1 C 2 Customer-Specified Selections Available


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    BD240, BD240A, BD240B, BD240C BD241 O-220 BD240 BD240A PDF

    BD240C

    Abstract: BD239 BD239A BD239B BD239C BD240 BD240A BD240B
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package BD239, BD239A, BD239B, BD239C BD240, BD240A, BD240B, BD240C BD239, 239A, 239B, 239C NPN PLASTIC POWER TRANSISTORS


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    O-220 BD239, BD239A, BD239B, BD239C BD240, BD240A, BD240B, BD240C BD240C BD239 BD239A BD239B BD239C BD240 BD240A BD240B PDF

    Untitled

    Abstract: No abstract text available
    Text: BD240, BD240A, BD240B, BD240C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD241 Series TO-220 PACKAGE TOP VIEW 30 W at 25°C Case Temperature 2 A Continuous Collector Current 4 A Peak Collector Current B 1 C 2 Customer-Specified Selections Available


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    BD240, BD240A, BD240B, BD240C BD241 O-220 BD240A BD240 PDF

    Untitled

    Abstract: No abstract text available
    Text: BD240/A/B/C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD239/A/B/C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Collector-Emitter Voltage : BD240 :BD240A :BD240B :BD240C Collector Emitter Voltage : BD240


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    BD240/A/B/C BD239/A/B/C BD240 BD240A BD240B BD240C PDF

    Untitled

    Abstract: No abstract text available
    Text: BD239C BD240C COMPLEMENTARY SILICON POWER TRANSISTORS . BD239C IS ST PREFERRED SALESTYPE DESCRIPTION The BD239C is a silicon epitaxial-base NPN transistor mounted in Jedec TO-220 plastic package. It is inteded for use in medium power linear and switching applications.


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    BD239C BD240C BD239C O-220 BD240C. PDF

    bd240c

    Abstract: BD240 bd240B
    Text: BD240/A/B/C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD239/A/B/C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Emitter Voltage: BD240 :BD240A :BD240B :BD240C Collector Emitter Voltage: BD240


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    BD240/A/B/C BD239/A/B/C BD240 BD240A BD240B BD240C BD240 BD240A BD240B PDF

    Untitled

    Abstract: No abstract text available
    Text: BD240, BD240A, BD240B, BD240C PNP SILICON POWER TRANSISTORS C o p y rig h t 1997, Power Innovations Limited, UK • JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD241 Series T0-220 PACKAGE TOP VIEW • 30 W at 25°C Case Temperature


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    BD240, BD240A, BD240B, BD240C BD241 T0-220 BD240 BD240A BD240B PDF

    Untitled

    Abstract: No abstract text available
    Text: m BD239, BD239A, BD239B, BD239C BD240, BD240A, BD240B, BD240C BD239,239A, 239B, 239C BD240,240A, 240B, 240C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications DIM A 8 C D E F G H J K L M N MIN MAX


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    BD239, BD239A, BD239B, BD239C BD240, BD240A, BD240B, BD240C BD239 BD240 PDF

    239a

    Abstract: 240b b0239c BD239 BD239A BD239B BD239C BD240 BD240A BD240B
    Text: |j^ BD239, BD239A, BD239B, BD239C BD240, BD240A, BD240B, BD240C BD239,239A, 239B, 239C BD240,240A, 240B, 240C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications DIM A 8 C D E F G H J K L M N MIN


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    BD239, BD239A, BD239B, BD239C BD240, BD240A, BD240B, BD240C BD239 BD240 239a 240b b0239c BD239A BD239B BD239C BD240A BD240B PDF

    d 417 transistor

    Abstract: 417 TRANSISTOR 8D239 80239 80239c 80240 BD239 BD239A BD239B BD240
    Text: 01 3875081 G E SOLID STATE Pro Electron Pow er Transistors D E • 3 fl"? S D fl i 01E 17527 D 0 LI ji 7 5 dï 7- / BD240, BD240A, BD240B, BD240C File Number 670 Epitaxial-Base Silicon P-N-P


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    BD240, BD240A, BD240B, BD240C BD239, BD239A, BD239B, BD239C d 417 transistor 417 TRANSISTOR 8D239 80239 80239c 80240 BD239 BD239A BD239B BD240 PDF

    Untitled

    Abstract: No abstract text available
    Text: n BD239, BD239A, BD239B, BD239C BD240, BD240A, BD240B, BD240C BD239,239A, 239B, 239C BD240,240A, 240B, 240C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications DIM A B C D E F G H J K L M N MIN MAX


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    BD239 BD240 BD239, BD239A, BD239B, BD239C BD240, BD240A, BD240B, BD240C PDF

    BD240

    Abstract: BD240C BD240A BD240B
    Text: BD240/A/B/C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 239/A/B/C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol C ollector-E m itter Voltage : BD240 :BD240A :BD240B :BD240C C ollector Em itter Voltage : BD240


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    BD240/A/B/C BD239/A/B/C BD240 BD240A BD240B BD240C BD240 BD240C BD240A BD240B PDF

    9At TRANSISTOR

    Abstract: B0240B
    Text: BD240, BD240A, B0240B, BD240C PNP SILICON POWER TRANSISTORS Copyright 0 1997, Power Innovations Limited, UK JUNE 973 - REVISED MARCH 1997 Designed for Complementary Use with the BD241 Series TO-220 PA C KA G E (TO P V IEW 30 W at 2S°C Case Temperature


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    BD240, BD240A, B0240B, BD240C BD241 O-220 BD240 BD240A BD240B 9At TRANSISTOR B0240B PDF

    B0240A

    Abstract: No abstract text available
    Text: BD240, BD240A, BD240B, BD240C File Number 670 Epitaxial-Base Silicon P-N-P VERSAWATT Transistors For Power-Amplif ier and High-Speed-Switching Applications Features: • 30 W at 25°C case temperature ■ 4-A rated collector current ■ Min. f j of 3 MHz at 10 V, 200 mA


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    BD240, BD240A, BD240B, BD240C BD239, BD239A, BD239B, BD239C B0240A PDF

    b0239c

    Abstract: 8D239C BD 239A
    Text: M OT OR OL A SC XS TR S /R F M E D | b3b7aS1 MOTOROLA SEMICONDUCTOR TECHNfCAL DATA COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS OOS472S 1 | NPN PNP BD239 BD239A BD239B BD239C BD240 BD240A BD240B BD240C 2 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON «. . designed for use in general purpose amplifier and switching


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    OOS472S BD239 BD239A BD239B BD239C BD240 BD240A BD240B BD240C O-220 b0239c 8D239C BD 239A PDF

    BD240 Philips

    Abstract: BD240A BD239 BD239C BD240 BD240B BD240C
    Text: I I . N AMER PHILIPS/DISCRETE . BSE D • ‘ bb53131 Q ü n 3 â T b ■ • BD240; BD240A BD240B; BD240C T - 3 3 M 7 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in output stages of audio and television*


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    bbS3i31 BD240; BD240A BD240B; BD240C BD239; BD239C, BD240 BD240 Philips BD239 BD239C BD240B BD240C PDF