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    BD3 TUNNEL DIODE Search Results

    BD3 TUNNEL DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    BD3 TUNNEL DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Tunnel diode

    Abstract: BD3 diode BD3 tunnel diode tunnel diodes BD3 diode BD3, "tunnel diode" 1N3712 tunnel diode specifications GE "TUNNEL DIODE" BD-406
    Text: BACK DIODES GENER AL PURPOSE F o r M ix e r s , D e te c to rs and S w itc h in g C irc u its GE Type’ Rever.'.e Voltage Min, Ip c Peak Point Current Max. mA Capacitance Max. (pF) t' - Ip = 90 .t 10 mV (mA) V r2 t mA (mV) V r, (n Jfi Forward max (mV) (a) V f ,


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    TD251-256, 51A-256A, TD261/270 1N4090 1N3712 Tunnel diode BD3 diode BD3 tunnel diode tunnel diodes BD3 diode BD3, "tunnel diode" tunnel diode specifications GE "TUNNEL DIODE" BD-406 PDF

    Germanium Power Diodes

    Abstract: BD3 tunnel diode Germanium Power Devices
    Text: Germanium Power Devices Corp. r— rr— r - - -— :- Specifications BACK DIODES BDl, 2, 3, 4, 5, 6 & 7 are germanium back diodes which make use of the quantum mechanical tunneling phenomenon, thereby attaining a very low forward voltage


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    350mv) Germanium Power Diodes BD3 tunnel diode Germanium Power Devices PDF

    BD3 diode

    Abstract: BD3 tunnel diode BD3 diode BD3, transistor BD6 tunnel diode General Electric BD5 diode "back diode" 160 germanium transistor germanium diodes forward drop TUNNEL DIODE
    Text: Germanium I BD1-7 I Diodes The G eneral Electric types 4JFB D 1-7 are germ anium back diodes which m ake use of the q u an tu m m echanical tunneling phenom enon, thereby attaining a very low forw ard voltage d rop and elim inating charge storage effects. They feature closely


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    ks 4290 industrial controller

    Abstract: AKA NF 028 ATT2C12 ATT ORCA fpga ATT2C08 ATT2C15 52833 trw 2015 ptc ei 8n CODE PJ 62-00
    Text: Preliminary Data Sheet January 1995 AT&T Microelectronics Optimized Reconfigurable Cell Array ORCA 2C Series Field-Programmable Gate Arrays Features • High density: 3,500 to 26,000 usable gates ■ High I/O: up to 384 usable I/O ■ High-performance 0.5 (xm CMOS technology


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    16-bit 32-bit 84-Pin 144-Pin 208-Pin 240-Pin 304-Pin 364-Pin 429-Pin PS208 ks 4290 industrial controller AKA NF 028 ATT2C12 ATT ORCA fpga ATT2C08 ATT2C15 52833 trw 2015 ptc ei 8n CODE PJ 62-00 PDF

    APY12

    Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
    Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP


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    Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367 PDF

    PHILIPS toroidal core 2P80

    Abstract: PHILIPS toroidal core 3c90 push-pull converter design Philips Components, Soft Ferrites 3C11 philips 3e1 ferrite material PHILIPS toroidal core 4a11 ETD29-3C90 smd marking 330 e71 ETD59-3F3 philips 4b1 ferrite rod
    Text: Soft Ferrites and Accessories Contents Introduction Quality Environmental aspects of soft ferrites Ordering information Applications Literature and reference publications Ferrite materials survey and specifications - Ferrite materials survey - Material specifications and graphs


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    CBW204 TN33/20/11 TN33/20/11-2P40 TN33/20/11-2P50 TN33/20/11-2P65 TN33/20/11-2P80 TN33/20/11-2P90 PHILIPS toroidal core 2P80 PHILIPS toroidal core 3c90 push-pull converter design Philips Components, Soft Ferrites 3C11 philips 3e1 ferrite material PHILIPS toroidal core 4a11 ETD29-3C90 smd marking 330 e71 ETD59-3F3 philips 4b1 ferrite rod PDF

    L130C

    Abstract: L74c l31c l97c l65c A311TC l146c l48c L202C L235C
    Text: ORCA ORSPI4 Dual SPI4 Interface and High-Speed SERDES FPSC May 2009 Data Sheet Lattice Semiconductor has developed a next-generation FPSC targeted at high-speed data transmission. Built on the Series 4 reconfigurable embedded System-on-a-Chip SoC architecture, the ORSPI4 FPSC contains two


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    8b/10b OIF-SPI4-02 1156-fpBGA 1036-ball 6A-07 1036fpSBGA 1036-ftSBGA) 06x-09 1036-pin 1036-pin L130C L74c l31c l97c l65c A311TC l146c l48c L202C L235C PDF

    AL437

    Abstract: L97c L235C L103T L41C L140C L94C l165c L239C L43C
    Text: ORCA ORSPI4 Dual SPI4 Interface and High-Speed SERDES FPSC November 2003 Preliminary Data Sheet Lattice Semiconductor has developed a next-generation FPSC targeted at high-speed data transmission. Built on the Series 4 reconfigurable embedded System-on-a-Chip SoC architecture, the ORSPI4 FPSC contains two


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    8b/10b OIF-SPI4-02 ORSPI4-1FE1036IES ORSPI4-F1156IES ORSPI4-2FE1036CES ORSPI4-1FE1036CES ORSPI4-2F1156CES ORSPI4-1F1156CES AL437 L97c L235C L103T L41C L140C L94C l165c L239C L43C PDF

    L211C

    Abstract: 3100B L17c R68T l71c
    Text: ORCA ORSPI4 Dual SPI4 Interface and High-Speed SERDES FPSC July 2004 Preliminary Data Sheet Lattice Semiconductor has developed a next-generation FPSC targeted at high-speed data transmission. Built on the Series 4 reconfigurable embedded System-on-a-Chip SoC architecture, the ORSPI4 FPSC contains two


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    8b/10b OIF-SPI4-02 ORSPI4-2FE1036CES ORSPI4-1FE1036CES ORSPI4-2F1156CES ORSPI4-1F1156CES ORSPI4-1FE1036IES ORSPI4-F1156IES L211C 3100B L17c R68T l71c PDF

    L43C

    Abstract: L130C l44c L239C l220c L235C L97c L62C L81C l31c
    Text: ORCA ORSPI4 Dual SPI4 Interface and High-Speed SERDES FPSC October 2007 Data Sheet Lattice Semiconductor has developed a next-generation FPSC targeted at high-speed data transmission. Built on the Series 4 reconfigurable embedded System-on-a-Chip SoC architecture, the ORSPI4 FPSC contains two


    Original
    8b/10b OIF-SPI4-02 36-Bit 1156-fpBGA 1036-ball 6A-07 1036fpSBGA 1036-ftSBGA) L43C L130C l44c L239C l220c L235C L97c L62C L81C l31c PDF

    L47C

    Abstract: L146C L135 l54c L62C L97C verilog code of prbs pattern generator L71C L235C L43C
    Text: ORCA ORSPI4 Dual SPI4 Interface and High-Speed SERDES FPSC February 2005 Data Sheet Lattice Semiconductor has developed a next-generation FPSC targeted at high-speed data transmission. Built on the Series 4 reconfigurable embedded System-on-a-Chip SoC architecture, the ORSPI4 FPSC contains two


    Original
    8b/10b OIF-SPI4-02 ORSPI4-2FE1036I ORSPI4-1FE1036I ORSPI4-2F1156I ORSPI4-1F1156I L47C L146C L135 l54c L62C L97C verilog code of prbs pattern generator L71C L235C L43C PDF

    pj 929 diode picture

    Abstract: bf471 A7R SMD Transistor TDA8391 transistor f488 tda8351 pin-compatible tda1000 Germanium drift transistor marking 3U 3T 3C diode germanium transistor
    Text: Philips Sem iconductors Semiconductors for Television and Video Systems Contents PART A page SELECTION GUIDE Functional index 5 Numerical index 17 Maintainance list 27 GENERAL Quality 31 Pro Electron type numbering system for Discrete Semiconductors 31 Pro Electron type numbering system for Integrated Circuits


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    BA481 SAA7197 SAA7199B TDA4680 TDA4685 pA733C LFC02 MEH469 pj 929 diode picture bf471 A7R SMD Transistor TDA8391 transistor f488 tda8351 pin-compatible tda1000 Germanium drift transistor marking 3U 3T 3C diode germanium transistor PDF