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    BDT41F Search Results

    BDT41F Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BDT41F Philips Semiconductors Silicon Epitaxial Power Transistors Original PDF
    BDT41F Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDT41F Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    BDT41F Datasheets Context Search

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    NPN Transistor VCEO 80V 100V

    Abstract: BDT41AF BDT41BF BDT41CF BDT41F
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT41F/AF/BF/CF DESCRIPTION •DC Current Gain -hFE = 30 Min @ IC= 0.3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40V(Min)- BDT41F; 60V(Min)- BDT41AF 80V(Min)- BDT41BF; 100V(Min)- BDT41CF


    Original     		BDT41F/AF/BF/CF BDT41F; BDT41AF BDT41BF; BDT41CF BDT42F/AF/BF/CF BDT41F NPN Transistor VCEO 80V 100V BDT41AF BDT41BF BDT41CF BDT41F PDF

    Untitled

    Abstract: No abstract text available
    Text: N ANER PHILIPS/DISCRETE ESE D 1^53=131 0011721 T • BDT41F;41AF; BDT41BF;41CF T -33-0? SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. PNP complements are BDT42F, BDT42AF, BDT42BF, and BDT42CF.


    OCR Scan     		BDT41F BDT41BF OT186 BDT42F, BDT42AF, BDT42BF, BDT42CF. BDT41F PDF

    Untitled

    Abstract: No abstract text available
    Text: II N AUER PHILIPS/DISCRETE 2SE D U bb53T31 □□1^737 3 • I J BDT42F; 42AF; BDT42BF; 42CF T-33-/7 SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in a SOT186 envelope w ith an electrically insulated mounting base. NPN complements are BDT41F, BDT41AF, BDT41BF, and BDT41CF.


    OCR Scan     		bb53T31 BDT42F; BDT42BF; T-33-/7 OT186 BDT41F, BDT41AF, BDT41BF, BDT41CF. BDT42F PDF

    BDT42CF

    Abstract: BDT41BF BDT41F BDT42AF BDT42BF BDT42F 41F 134 41AF 2bdt
    Text: ^ 5 3 1 3 1 N AMER PHILIPS/DISCRETE H 5 E D 0 0 1 1 7 2 1 I I T BDT41F;41AF; BDT41BF;41CF r-3 ^ -0 ? SILICON EPITAXIAL POWER TRANSISTORS w in a «ÏOT186 e n v e lo p e with an electrically insulated NPN silicon epitaxial power transistors, each m a SOT186 enve p


    OCR Scan     		BDT41F BDT41BF enT186 OT186 BDT42AF, BDT42BF, BDT42CF. BDT42F, BDT42CF BDT42AF BDT42BF BDT42F 41F 134 41AF 2bdt PDF