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    BERYLLIUM COMPOUNDS Search Results

    BERYLLIUM COMPOUNDS Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    LM5111-2MYX/NOPB Texas Instruments Dual 5A Compound Gate Driver 8-MSOP-PowerPAD Visit Texas Instruments Buy
    LM5111-1MY/NOPB Texas Instruments Dual 5A Compound Gate Driver 8-MSOP-PowerPAD Visit Texas Instruments Buy
    LM5111-2MY/NOPB Texas Instruments Dual 5A Compound Gate Driver 8-MSOP-PowerPAD Visit Texas Instruments Buy
    LM5111-4M/NOPB Texas Instruments Dual 5A Compound Gate Driver 8-SOIC Visit Texas Instruments Buy

    BERYLLIUM COMPOUNDS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ECCOBOND 104

    Abstract: MIL-A-46146 Hysol C9-4215 Hysol 4215 Emerson Cuming Catalyst 11 Stycast 2651 7224 markem Hysol Stycast 2651 Markem 7224 Ink rtv 174
    Text: Introduction Guidelines for Space-Grade Applications MIL-DTL-38999 Connectors for Space Flight Nonmetallic materials such as rubber, plastic, adhesives and potting compounds can give off gasses when subjected to a vacuum or high heat. The space industry has adopted a standardized


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    MIL-DTL-38999 2651/Catalyst 2850FT/Catalyst 05-APR-2007 ECCOBOND 104 MIL-A-46146 Hysol C9-4215 Hysol 4215 Emerson Cuming Catalyst 11 Stycast 2651 7224 markem Hysol Stycast 2651 Markem 7224 Ink rtv 174 PDF

    4485-12-5

    Abstract: CONDUCTIVE INK
    Text: MATERIAL DECLARATION SHEET Material Number 86 C-P-L Dual Cup Product Line Panel Control Compliance Date September 30, 2005 RoHS Compliant Yes No. 1 2 Construction Element (subpart) Substrate Conductive Ink MSL Homogeneous Material Ceramic Ink N/A Material


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    Untitled

    Abstract: No abstract text available
    Text: MATERIAL DECLARATION SHEET Material Number 85L CP Dual Cup Product Line Panel Control Compliance Date September 30, 2005 RoHS Compliant Yes MSL N/A Subpart mass of total wt. (%) 72 Material Mass % of total unit wt. 3.920 25 1.361 5.455 7440-50-08 3 0.163


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    titanium dioxide

    Abstract: calcium grease
    Text: MATERIAL DECLARATION SHEET Material Number 85-L Cermet Dual Cup Product Line Panel Control Compliance Date September 30, 2005 RoHS Compliant Yes MSL N/A Subpart mass of total wt. (%) 72 Material Mass % of total unit wt. 3.920 25 1.361 5.455 7440-50-08 3


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    fiber switch

    Abstract: No abstract text available
    Text: MATERIAL DECLARATION SHEET Material Number 86-L Cermet Dual Cup Product Line Panel Control Compliance Date September 30, 2005 RoHS Compliant Yes MSL N/A No. Construction Element (subpart) Homogeneous Material Material weight [g] 1 Rotor Driver Zinc 0.968


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    material declaration amd

    Abstract: HALON 2402 CFC-12 ASBESTOS lead selenide 13765 63936 7446 data sheet gruner magnesium hydroxide
    Text: u Chapter 4 Package Materials CHAPTER 4 PACKAGE MATERIALS Introduction Controlled Materials Restricted Materials Materials of Interest Material Declaration Data Sheets Packages and Packing Publication Revision A 3/1/03 4-1 u Chapter 4 Package Materials INTRODUCTION


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    ISO-11469

    Abstract: manufacturing process calcium chloride Asbestos MSDS 79005 voltage regulator din6120 DIN-6120 Boric 94850 sulphuric acid 51 32844
    Text: SII GREEN PROCUREMENT STANDARDS Version 6 September 2010 Seiko Instruments Inc. S-G-3 Table of Contents Page PREFACE ・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・ 1


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    tva0300n07

    Abstract: mmic amplifier marking code N10 MTVA0300N05 PST-02-A-1 TVA0300N07W3 electronic passive components catalog SC-1016 MTVA0300 SMT2010TALN 42TVA
    Text: EMC TECHNOLOGY Custom Engineered Solutions 8851 SW Old Kansas Ave. 772 286-9300 ISO 9001 & 14001 Certified M I C R OWAV E C O M P O N E N T S www.emct.com Resistive Products, Smart Loads , High Reliability Stuart, FL 34997 (800) 544-5594 Thermopads®, Equalizers,


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    Untitled

    Abstract: No abstract text available
    Text: Material Composition Survey and Response Manual December 15, 2006 Third Edition Data Format Ver. 3.21 compliant Japan Green Procurement Survey Standardization Initiative Revision History: January 6, 2006: First Edition – Newly created upon the introduction of the JIG


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    Pb-R-10, Pb-R-15-22) PDF

    cyclohexene

    Abstract: 82306 1010218 urea formaldehyde resin adhesive tetrabutyl tin zinc naphthenate hydroquinone manufacturing process calcium chloride p-chlorophenol pentaerythritol
    Text: Matsushita Electric Group Chemical Substance Management Rank Guidelines Version 2 July 6, 2000 Matsushita Electric Industrial Co., Ltd. Contents 1. Purpose ・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・1


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    100v 23A P-Channel MOSFET

    Abstract: No abstract text available
    Text: Semiconductor FRF9150D, FRF9150R, FRF9150H 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 23A, -100V, rDS ON = 0.140Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot


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    FRF9150D, FRF9150R, FRF9150H -100V, O-254AA 1000K 3000K O-254AA MIL-S-19500 100v 23A P-Channel MOSFET PDF

    ta17741

    Abstract: 2E12 FRS9140D FRS9140H FRS9140R
    Text: FRS9140D, FRS9140R, FRS9140H 11A, -100V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 11A, -100V, RDS on = 0.315Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


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    FRS9140D, FRS9140R, FRS9140H -100V, O-257AA 100KRAD 300KRAD 1000KRAD 3000KRAD ta17741 2E12 FRS9140D FRS9140H FRS9140R PDF

    MIL-S-19500

    Abstract: mosfet 60a 200v 100v 23A P-Channel MOSFET FRF250R4 N-channel enhancement 200V 60A 1E14 2E12 JANSR2N7294
    Text: JANSR2N7294 Formerly FRF250R4 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 23A, 200V, rDS ON = 0.115Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from


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    JANSR2N7294 FRF250R4 1000K MIL-S-19500 mosfet 60a 200v 100v 23A P-Channel MOSFET FRF250R4 N-channel enhancement 200V 60A 1E14 2E12 JANSR2N7294 PDF

    Untitled

    Abstract: No abstract text available
    Text: FRF250D, FRF250R, FRF250H 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 23A, 200V, RDS on = 0.115S1 TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)


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    FRF250D, FRF250R, FRF250H 115S1 O-254AA 100KRAD 300KRAD 1000KRAD 3000KRAD MIL-S-19500 PDF

    MIL-S-19500

    Abstract: 1E14 2E12 FRF150R4 JANSR2N7292
    Text: JANSR2N7292 S E M I C O N D U C T O R Formerly Available As FRF150R4 Radiation Hardened, N-Channel Power MOSFETs June 1997 Features Description • 25A, 100V, rDS ON = 0.070Ω The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both


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    JANSR2N7292 FRF150R4 1000K MIL-S-19500 MIL-S-19500 1E14 2E12 FRF150R4 JANSR2N7292 PDF

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7292 HARRIS S E M I C O N D U C T O R Formerly Available As FRF150R4 Radiation Hardened, N-Channel Power MOSFETs Features Description . 25A, 100V, rDS 0 N = 0.070£2 The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both


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    JANSR2N7292 FRF150R4 1000K MIL-S-19500 PDF

    Untitled

    Abstract: No abstract text available
    Text: FRF450D, FRF450R, FRF450H 9A, 500V, 0.615 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 9A, 500V, RDS on = 0.615Q. TO-254AA • Second G eneration Rad Hard M O SFET Results From New Design Concepts • G am m a - Meets Pre-Rad Specifications to 100KRAD(Si)


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    FRF450D, FRF450R, FRF450H O-254AA 100KRAD 300KRAD 1000KRAD 3000KRAD MIL-S-19500 -254AA PDF

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7292 Semiconductor Formerly FRF150R4 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 25A, 100V, rDS ON = 0.070Ω The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both


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    JANSR2N7292 1000K O-254AA MIL-S-19500 PDF

    Beryllium Compounds

    Abstract: JIG-101 asbestos Enpirion EN5365QI EN5366QI SURVEY selenium material composition Information Enpirion en5366qi
    Text: Material Declaration Data Sheet ENPIRION Date Company Name Company Address May 15 2008 Enpirion, Inc 685 Route 202/206, Suite 305, Bridgewater, NJ 08807 908-575-7550 www.enpirion.com EN5365QI, EN5366QI Voltage Mode Synchronous Buck PWM DC-DC Converter Module


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    EN5365QI, EN5366QI 10x12x1 58-pin JIG-101 RoHS-EN5365-5366 58QFN10x12x1 V01-08 Beryllium Compounds JIG-101 asbestos Enpirion EN5365QI EN5366QI SURVEY selenium material composition Information Enpirion en5366qi PDF

    JIG-101

    Abstract: selenium EN5395 Beryllium Compounds Information Enpirion en5395qi Information Enpirion en5396qi
    Text: Material Declaration Data Sheet ENPIRION Date Company Name Company Address Aug 12 2008 Enpirion, Inc 685 Route 202/206, Suite 305, Bridgewater, NJ 08807 908-575-7550 www.enpirion.com EN5395QI, EN5396QI Voltage Mode Synchronous Buck PWM DC-DC Converter Module


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    EN5395QI, EN5396QI 10x12x1 58-pin JIG-101 RoHS-EN5395-5396 58QFN10x12x1 V01-08 JIG-101 selenium EN5395 Beryllium Compounds Information Enpirion en5395qi Information Enpirion en5396qi PDF

    Asbestos MSDS

    Abstract: No abstract text available
    Text: SII GREEN PROCUREMENT STANDARDS Version 7 September 2012 Seiko Instruments Inc. S-G-3 Table of Contents Page PREFACE ・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・ 1


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    FRS240R

    Abstract: 1E14 2E12 FRS240D FRS240H
    Text: FRS240D, FRS240R, FRS240H 12A, 200V, 0.255 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 12A, 200V, RDS on = 0.255Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


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    FRS240D, FRS240R, FRS240H O-257AA 100KRAD 300KRAD 1000KRAD 3000KRAD MIL-S-19500 FRS240R 1E14 2E12 FRS240D FRS240H PDF

    Untitled

    Abstract: No abstract text available
    Text: FRS9140D, FRS9140R, FRS9140H 11 A, -100V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 11 A, -100V, RDS on = 0.315Q. TO-257AA • Second G eneration Rad Hard M O SFET Results From New Design Concepts • G am m a - Meets Pre-Rad Specifications to 100KRAD(Si)


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    FRS9140D, FRS9140R, FRS9140H -100V, O-257AA 100KRAD 300KRAD 1000KRAD 3000KRAD PDF

    Untitled

    Abstract: No abstract text available
    Text: if^ S S FRS240D, FRS240R, FRS240H 12A, 200V, 0.255 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 12A, 200V, RDS on = 0.255£i TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)


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    FRS240D, FRS240R, FRS240H O-257AA 100KRAD 300KRAD 1000KRAD 3000KRAD IL-S-19500 MIL-S-19500 PDF