transistor bc 7-40
Abstract: No abstract text available
Text: <£&ml- lon£Luctoi tPicxLct}., fine. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN SILICON PLANAR EPITAXIAL THANSISTOB BF 173 THE BP173 IS AN NPN SILICON PLANAR EPITAXIAL TRANSISTOR INTENDED FOR
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BP173
200mA
35MHz
transistor bc 7-40
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BV-1 501
Abstract: BF-960 spice model LT1715 spice model Transistor TT 2246 cd 6283 ic transistor KF 507 LT1716 spice model COMP1016 lt6234 spice model AUO-11307 R01
Text: linear.txt SPICE MODELS - LINEAR Technology Corp. LTC1150 * Version 2.0 Copyright Linear Technology Corp. 10/19/05. All rights reserved. * .SUBCKT LTC1150 3 2 7 4 6 ; +IN -IN V+ V- OUT * INPUT IB1 2 7 -10P IB2 3 7 10P RD1 4 80 2122.1 RD2 4 90 2122.1 M1 80 2 12 12 PM1
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LTC1150
LTC1150
5e-12
5e-11
2857E-11
65e-11
7124E-04
3e-11
9605e-8
74902E-10
BV-1 501
BF-960 spice model
LT1715 spice model
Transistor TT 2246
cd 6283 ic
transistor KF 507
LT1716 spice model
COMP1016
lt6234 spice model
AUO-11307 R01
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4502B
Abstract: No abstract text available
Text: S G S - T H O M S O N 07C D I 7=15^237 0014=145 3 I c o s /m o s INTEGRATED CIRCUIT - -— l o k hcc /hcf « b a ' . v . . Ì - - 7929225 - • —-—- il ■ S G S SÉM ICÔNÔÛCf OR ° C% LRCH 9 0 9 5 9 ■'Bf'é . * "^Ti^ ° T '^ ' 2 / STR O B E D H E X IN V E R T E R /B U F F E R
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SSY20
Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B
Text: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen Vorzugs anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3
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BEL100N
Abstract: bel 100n transistor 41 bf BEL100 BEL100N TRANSISTOR transistor BF 245 BEL 167 transistor BEL 100N BEL BF200 BF200 transistor
Text: Si Device No VCEO Volts mm V cB O Volts mm V ebo Volts mm hFE at bias mm /max Ic mA V ce Volts 1 CM Plot ICBO mA mW uA max max typ V ce Sat Volts typ M Hz Cob Pt- typ typ ÍT ts N ns typ dB typ toff nsec — f Package NPN SWITCHING TRANSISTORS 20. 2N2218
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2N2218
285max
2N2219A
2N2221A
222STOR
BEL100N
2N3500
2N3501
2N3501TV
20min.
bel 100n transistor
41 bf
BEL100
BEL100N TRANSISTOR
transistor BF 245
BEL 167 transistor
BEL 100N
BEL BF200
BF200 transistor
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bss17
Abstract: BFY 99 Transistor BFR 30 BFR 30 transistor BFR 450 BFY 93 bfx 63 bfw 96 Transistor BFR 96 BFX97
Text: PROFESSIONAL TRANSISTORS continued m u > (s (5) \ œ œ •Q -a o ex. Ll_ z r i o £3. > < e X CO < E o 'i LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 BFR 37 NPN BFR 38 PNP BFR 90* NPN NPN BFR 91* B F R 96* NPN BFR9 7 /2N 3866 NPN B F R 98/2N 4427 NPN
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BFR10
BFR36
BFR96*
97/2N
98/TO-39
BFX97A
15/2N
16/2N
17/2N
18/2N
bss17
BFY 99
Transistor BFR 30
BFR 30 transistor
BFR 450
BFY 93
bfx 63
bfw 96
Transistor BFR 96
BFX97
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bcw 94 b
Abstract: BF-139 F 540 NS BSY54 BCW95B BSY55
Text: CB 76 (CB 6} (CB 7) Silicon NPN transistors, general purpose (continued) Tamb= 25 °C Transistors N P N silicium , usage générai (suite) (mW) VCEO (V) h21 E VCER* h21E V c E X a min max F 139 Bc F 139 B<> F 139 B TO 18 TO 18 540 540 540 330 330 40 60 60
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BF441
Abstract: BF509 BF 184 transistor BF 145 transistor BF440 BF 145 BF680 transistor BF 509 BFS20 BFS62
Text: RF transistors Type Structure Silicon transistors Fifl. Nr. Maximum ratings Characteristics A c t a* I q anc ^CE V mA f j at MHz 48-167 1 10 a 27 4 10 7 a 38 67-220 1 36-125 1 10 30 25 £27 40 40 c iire a UCB V PF 230 1 0.65 10 350 4 0.15 10 550 260 200 5
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BFS20
BFS62
BFX89
BFY88O
BF441
BF509
BF 184 transistor
BF 145 transistor
BF440
BF 145
BF680
transistor BF 509
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BF173
Abstract: BF173 Transistor bf 494 transistor transistor bf 494 transistor BF 489 BF 494 C emetteur video iran cbc6 bf 173 transistor
Text: BF 173 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN S ILIC IU M , PLA N A R E P IT A X IA U X The NPN planar epitaxial transistor BF 173 intended for use in L F video amplifiers un controlled stages of television receivers. Le transistor NPN "planar é p ita xia l" BF 173 est
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BF173
BF173
BF173 Transistor
bf 494 transistor
transistor bf 494
transistor BF 489
BF 494 C
emetteur video
iran
cbc6
bf 173 transistor
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tfk 186
Abstract: BF115 BF 183 transistor BF 182 transistor TFK S 186 BF 186 tfk 145 transistor bf 184 BF 184 NPN transistor BF 184 transistor
Text: V BF 115 Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Allgem ein bis 100 MHz Applications: General up to 100 MHz Abmessungen in mm Dimensions in mm 2,54 *4,8 »5,7 «0,5 -:— f - — Í t •*- 13-►
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transistor bf 196
Abstract: BF 194 transistor transistor bf 195 ge-2 transistor BF 194 npn transistor transistor bf 194 transistor bf 193 BF173 bf 173 transistor transistor bf 194 E C B
Text: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: FS-ZF-Verstärkerstufen in Em itterschaltung. Besonders in Video-ZF-Endstufen Applications: Video IF am p lifier stages in com m on e m itter configuration,
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BF173
Abstract: BF173 Transistor BF 145 transistor 569-GS transistor bc 7-40
Text: TELEFUNKEN ELECTRONIC filC D WÊ fiRSDGTb OOGSlbM BF173 '¡TitLitFOJJKliKGlM electronic Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: Video IF amplifier stages In common emitter configuration, especially In video IF power stages
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BF173
569-GS
BF173
BF173 Transistor
BF 145 transistor
transistor bc 7-40
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transistor bf 185
Abstract: BF185 bf 185 BF 185 transistor coe br
Text: BF 185 w Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar R F Transistor Anwendungen: Allgem ein und HF-Verstärkerstufen bis 100 MHz General and RF am plifier stages up to 100 MHz Applications: Besondere Merkmale: • Rauschmaß 4 dB
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BF115
Abstract: TLO 721 BF 145 transistor transistor bc 7-40
Text: TELEFUNKEN ELECTRONIC file D • fl'téQQ'ìb 000515b 1 ■ ALGG n j / - y r i B F115 TIILilFQMKiN electronic Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: General up to 100 MHz Dimensions in mm *3 Terminal “S" connected with case
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000515b
569-GS
BF115
TLO 721
BF 145 transistor
transistor bc 7-40
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KT 819 transistor
Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e
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BF184
Abstract: Bf184 transistor transistor bc 7-40 TELEFUNKEN e transistor marking ra BF 145 transistor
Text: filC D TELEFUNKEN E LE CT RONI C TTliUiiFyKlKllNl electronic • ÔTSOGTb OQDSlbô fi 7 = 3 /-/5 - BF184 ' CreativeTechnologies Silicon NPN Epitaxial Planar RF Transistor Applications: General and controlled RF amplifier stages upt to 100 MHz Features: • Noise figure 3.S dB
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BF184
569-GS
BF184
Bf184 transistor
transistor bc 7-40
TELEFUNKEN e
transistor marking ra
BF 145 transistor
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bf185
Abstract: telefunken ra 200 amplifier transistor bc 7-40 transistor bf 185 transistor marking c y
Text: Ö1C D TELEFUNKEN ELECTRONIC TUmiFtUlMKIKl electronic • fi^SOO'ib 0005172 T B F 185 7= 3/-/S— Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: General and RF amplifier stages up to 100 MHz Feature*: • Noise figure 4 dB Dimensions In mm
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569-GS
bf185
telefunken ra 200 amplifier
transistor bc 7-40
transistor bf 185
transistor marking c y
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
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marking code SE transistors
Abstract: No abstract text available
Text: TELEFUNKEN ELECTRONIC 17E » • fl'ÌEDQRb DQÌHS27 è BUT 56 • BUT 56 A mJMFWKIM electronic Crttttv«Ifcfwioiog* T*- 3 3 -Ì2 Silicon NPN Power Transistors Applications: Switching mode power supply Features: • In multi diffusion technique • Short switching times
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IAL66
DIN41
15A3DIN
marking code SE transistors
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Tfk 680
Abstract: TFK 201 tfk 140 TFK 175 tfk 830 tfk 145 BF 184 transistor TFK 03 BF184 6 tfk 145
Text: V BF 184 Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon N P N Epitaxial Planar RF Transistor Anwendungen: A llg e m e in und g e re g e lte H F-V erstärke rstu fe n bis 100 M H z Applications: G e ne ra l and c o n tro lle d R F am p llfie r s ta g e s up to 100 M H z
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transistor Bc 542
Abstract: transistor BC 56 transistor bc 144 bc 147 transistor BUT 11 Transistor transistor BC 147 transistor bc 146 c 2665 transistor BUT56 FC4A
Text: 17E 1> • ô'iëO O 'lL 000*155? TELEFUNKEN ELE CTRONIC BUT 56 • BUT 56 A TTilUlFiyjlìSKiìii electronic Cr*ttve Tèehoo*og*s T*-33-f3 Silicon NPN Power Transistors Applications: Switching mode power supply Features: • In multi diffusion technique • Short switching times
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33-r2
a75ttti
DIN41
T0126
15A3DIN
transistor Bc 542
transistor BC 56
transistor bc 144
bc 147 transistor
BUT 11 Transistor
transistor BC 147
transistor bc 146
c 2665 transistor
BUT56
FC4A
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Untitled
Abstract: No abstract text available
Text: Al BF 173 NFN SILICON PLANAR EPITAXIAL TRANSISTOR M IC R O EEEL— EE CD " T R O r s i I S CASE T0-72J THE BF173 IS AN NFN SILICON PLANAR EPITAXIAL TRANSISTOR INTENDED FOR USE IN VIDEO IF AMPLIFIERS AND PARTICULAR FOR THE OUTPUT STAGES. ABSOLUTE MAXIMUM RATINGS
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T0-72J
BF173
200mA
09g4g3
35MHz
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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BF173
Abstract: BF173 Transistor 3430J to-72j 364MHz
Text: Ul BF 173 NFN SILICON PLANAR EPITAXIAL TRANSISTOR MICRO E E E L —EECDTTROrsllCSS CASE T 0 -7 2 J THE BF173 IS AN NFN SILICON PLANAR EPITAXIAL TRANSISTOR INTENDED FOR USE IN VIDEO IF AMPLIFIERS AND PARTICULAR FOR THE OUTPUT STAGES. ABSOLUTE MAXIMUM RATINGS
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BF173
O-72J
200mA
TELEX-33510
430J81
35MHz
BF173 Transistor
3430J
to-72j
364MHz
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