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    BF 333 TRANSISTOR DATASHEET Search Results

    BF 333 TRANSISTOR DATASHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BF 333 TRANSISTOR DATASHEET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    semikron SKHI 22

    Abstract: pactan pactan 5011 SKHI 22 A/B H4 R SKHI22B semikron SKHI 22 A Wacker A33 SKHI21A skhi 24 r POWER MODUL SEMIKRON
    Text: SKHI 21A . Absolute Maximum Ratings Symbol Conditions Values Units  % & 25$ &)5!; ,!;   8  : 0/ 8 < > '   5 5 -%?  > -.B '> ! >  SKHI 21A 6@ 6@, D). )#  ) #* #!+ 3 & ) +!# #3 %+ ) ) !- ) 


    Original     		SKPC2006 semikron SKHI 22 pactan pactan 5011 SKHI 22 A/B H4 R SKHI22B semikron SKHI 22 A Wacker A33 SKHI21A skhi 24 r POWER MODUL SEMIKRON PDF

    Untitled

    Abstract: No abstract text available
    Text: SKHI 21A R . Absolute Maximum Ratings Symbol Conditions Values Units  % &)25$ &)5!; ,!; ( 8  : 0/ 8 < > '   5 5 -%?  > -.B '> ! >  SKHI 21A (R) 6@ 6@, D). )#  ) #* #!+ 3 & ) +!# #3 %+ ) ) !- ) 


    Original     		PDF

    skhi 24 r

    Abstract: No abstract text available
    Text: SKHI 21A R . power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter Absolute Maximum Ratings Symbol Conditions Values Units  % &)25$


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7638-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 170 mΩ ID (Tc = 25°C) = 20 A hFE (Tc = 25°C) = Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate


    Original     		2N7638-GA 2N7638 8338E-48 0733E-26 73E-10 86E-10 90E-2 2N7638-GA PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7636-GA Normally – OFF Silicon Carbide Junction Transistor Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate Gate Oxide Free SiC Switch Exceptional Safe Operating Area


    Original     		2N7636-GA 2N7636 8338E-48 0733E-26 37E-10 97E-10 50E-02 2N7636-GA PDF

    2n2222 spice model

    Abstract: No abstract text available
    Text: 2N7637-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 170 mΩ ID (Tc = 25°C) = 20 A hFE (Tc = 25°C) = Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate


    Original     		2N7637-GA 2N7637 8338E-48 0733E-26 73E-10 86E-10 90E-2 2N7637-GA 2n2222 spice model PDF

    Untitled

    Abstract: No abstract text available
    Text: GA20SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


    Original     		GA20SICP12-247 O-247AB 0SICP12 GA20SICP12 833E-48 073E-26 752E-12 01E-09 50E-03 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA10SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


    Original     		GA10SICP12-247 O-247AB 427E-12 1373E-12 0E-03 GA10SICP12 55E-15 71739E-05 40E-10 00E-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA20SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack VDS RDS ON ID (Tc = 25°C) ID (Tc = 145°C) hFE (Tc = 25°C) Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch


    Original     		GA20SICP12-263 O-263-7L) Applicatio0SICP12 GA20SICP12 833E-48 073E-26 752E-12 01E-09 50E-03 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA10SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


    Original     		GA10SICP12-263 O-263-7L) 427E-12 1373E-12 0E-03 GA10SICP12 55E-15 71739E-05 40E-10 00E-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7635-GA Normally – OFF Silicon Carbide Junction Transistor Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate Gate Oxide Free SiC Switch Exceptional Safe Operating Area


    Original     		2N7635-GA 2N7635 8338E-48 0733E-26 37E-10 97E-10 50E-02 2N7635-GA PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7639-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 60 mΩ ID (Tc = 25°C) = 32 A hFE (Tc = 25°C) = Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate


    Original     		2N7639-GA 2N7639-GA 8338E-48 0733E-26 2281E-10 33957E-9 20E-03 PDF

    diode 0A70

    Abstract: GA05JT01-46
    Text: GA05JT01-46 Normally – OFF Silicon Carbide Junction Transistor Features Package •          RoHS Compliant 225°C maximum operating temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original     		GA05JT01-46 GA05JT01 8338E-48 0733E-26 16E-10 021E-10 050E-2 diode 0A70 GA05JT01-46 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7640-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 60 mΩ ID (Tc = 25°C) = 32 A hFE (Tc = 25°C) = Features Package •          RoHS Compliant 225°C maximum operating temperature Gate Oxide Free SiC Switch


    Original     		2N7640-GA 2N7640 8338E-48 0733E-26 2281E-10 33957E-9 20E-03 2N7640-GA PDF

    Untitled

    Abstract: No abstract text available
    Text: GA05JT03-46 Normally – OFF Silicon Carbide Junction Transistor Features Package •          RoHS Compliant 225°C maximum operating temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original     		GA05JT03-46 GA05JT03 8338E-48 0733E-26 16E-10 021E-10 050E-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA50JT06-258 Normally – OFF Silicon Carbide Junction Transistor Features •         VDS = 600 V RDS ON = 25 mΩ ID (Tc = 25°C) = 100 A hFE (Tc = 25°C) = 105 Package 225°C maximum operating temperature Gate Oxide Free SiC Switch


    Original     		GA50JT06-258 O-258 GA50JT06 00E-47 26E-26 3989E-9 026E-09 00E-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


    Original     		GA100SICP12-227 833E-48 073E-26 398E-9 026E-09 0E-03 GA100SIPC12 99E-16 3E-05 86E-09 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA05JT12-263 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original     		GA05JT12-263 O-263-7L) GA05JT12 8338E-48 0733E-26 254E-12 0E-1209 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA16JT17-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original     		GA16JT17-247 O-247 GA16JT17 833E-48 073E-26 4E-12 014E-09 500E-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA10JT12-263 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original     		GA10JT12-263 O-263-7L) GA10JT12 833E-48 073E-26 39E-12 1373E-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA20JT12-263 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original     		GA20JT12-263 O-263-7L) GA20JT12 833E-48 073E-26 4E-12 014E-09 500E-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA50JT12-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original     		GA50JT12-247 O-247 GA50JT12 833E-48 073E-26 398E-9 026E-09 00E-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA50JT17-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original     		GA50JT17-247 O-247 GA50JT17 833E-48 073E-26 398E-9 026E-09 00E-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA04JT17-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original     		GA04JT17-247 O-247 GA04JT17 8338E-48 0733E-26 254E-12 0E-1209 PDF