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    BF TRANSISTOR SERIES DATASHEET 90 Search Results

    BF TRANSISTOR SERIES DATASHEET 90 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650M-F-COVER Murata Manufacturing Co Ltd PQU650M Series - 3x5 Fan Cover Kit, RoHs Medical Visit Murata Manufacturing Co Ltd
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    BF TRANSISTOR SERIES DATASHEET 90 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: AC-DC 250 Watts CCB250 Series xppower.com • 250 W Convection Cooled • 300 W Peak Rating for 500 ms • Very High Efficiency up to 95% • 5 V Standby Rail and Inhibit Function • 80 275 VAC Operation • IT & Medical BF Safety Approvals • 3 Year Warranty


    Original     		CCB250 VAC/60 16-Mar-12 CCB250 PDF

    shockley diode application

    Abstract: shockley diode transistor bipolar driver schematic diode shockley shockley diode SPICE MODELS spice shockley diode SPICE MODELS AP 494 Application Note BF 494 C shockley diode datasheet
    Text: Application Note 23 Issue 2 March 1996 Zetex SPICE Models Understanding Model Parameters and Applications Limitations Neil Chadderton Introduction SPICE was originally developed as a simulation tool for Integrated Circuit design SPICE being an acronym for


    Original     		1970s. F632-79. shockley diode application shockley diode transistor bipolar driver schematic diode shockley shockley diode SPICE MODELS spice shockley diode SPICE MODELS AP 494 Application Note BF 494 C shockley diode datasheet PDF

    BSV52

    Abstract: HIGH SPEED SWITCHING NPN SOT23 mark B2 BSV52 fairchild 220-VIN
    Text: BSV52 BSV52 C E SOT-23 B Mark: B2 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


    Original     		BSV52 OT-23 BSV52 HIGH SPEED SWITCHING NPN SOT23 mark B2 BSV52 fairchild 220-VIN PDF

    Untitled

    Abstract: No abstract text available
    Text: BSV52 BSV52 C E SOT-23 B Mark: B2 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


    Original     		BSV52 OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: AC-DC 250/350 Watts EMH Series xppower.com • Industry Standard 3” x 5” x 1.43” Format • IT & Medical BF Approvals • 80 V - 275 VAC Operation • Optional ORing Diode (EMH350D Models) • Analog & PMBus Signals Options (EMH350) • 5 V Standby (EMH350)


    Original     		EMH350D EMH350) S12B-PHDSS PHDR-12VS, SPHD-001T-P0 EMH350PSXX-01TF EMH350PSXX-02VF EMH350PSXX-50TF 17-Sept-12 PDF

    EMH350PSXX

    Abstract: EMH350 SPHD-001T-P05 PHDR-12VS EMH350PSXX-01 EMH250PSXX
    Text: AC DC 250/350 Watts EMH Series xppower.com • Industry Standard 3” x 5” x 1.43” Format • IT & Medical BF Approvals • 80 V • Optional ORing Diode (EMH350D Models) • Analog & PMBus Signals Options (EMH350) • 5 V Standby (EMH350) • 3 Year Warranty


    Original     		EMH350D EMH350) EMH350PSXX-01TF EMH350PSXX-02VF S12B-PHDSS PHDR-12VS, SPHD-001T-P0 EMH350PSXX-50TF 15-June-12 EMH350PSXX EMH350 SPHD-001T-P05 PHDR-12VS EMH350PSXX-01 EMH250PSXX PDF

    transistor jst 26

    Abstract: transistor jst 02
    Text: AC DC 250/350 Watts EMH Series xppower.com • Single & Dual Output Models • IT & Medical BF Approvals • 80 V • Optional ORing Diode (EMH350D Models) • Analog & PMBus Signals Options (EMH350) • 5 V Standby (EMH350) • 3 Year Warranty 275 VAC Operation


    Original     		EMH350D EMH350) EMH350PD24 EMH350 06-Feb-14 transistor jst 26 transistor jst 02 PDF

    SMD TRANSISTOR MARKING BF

    Abstract: lm357 3578 smd japanese transistor reference manual 1N5819 spice model 3578AM SMD IN5819 vf SIMPLE SWITCHER PCB Layout Guidelines In5819 smd schottky transistor spice
    Text: LM1578A/LM2578A/LM3578A Switching Regulator General Description Features The LM1578A is a switching regulator which can easily be set up for such DC-to-DC voltage conversion circuits as the buck, boost, and inverting configurations. The LM1578A features a unique comparator input stage which not only has


    Original     		LM1578A/LM2578A/LM3578A LM1578A 1-Nov-99 AN-1055: AN-1055 SB-101: 5-Jan-97 28-Jun-96 SMD TRANSISTOR MARKING BF lm357 3578 smd japanese transistor reference manual 1N5819 spice model 3578AM SMD IN5819 vf SIMPLE SWITCHER PCB Layout Guidelines In5819 smd schottky transistor spice PDF

    MARKING W3 SOT23 TRANSISTOR

    Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
    Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*


    Original     		MPSH81 MMBTH81 MPSH81 OT-23 MARKING W3 SOT23 TRANSISTOR rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps PDF

    mu24 dc

    Abstract: SWT-2
    Text: APR F*r88uct Specifications Linear Integrated RFA120 Raytheon RFA120 Linear FET Macrocell Array General Features • ■ ■ ■ ■ 8 FET macrocells 4 bipolar macrocells Dual-layer metallization for high integration


    OCR Scan     		r88uct RFA120 mu24 dc SWT-2 PDF

    CBVK741B019

    Abstract: F63TNR MMBT5179 MPS5179 PN2222N PN5179 TRANSISTOR C 3223
    Text: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency


    Original     		PN5179 MMBT5179 OT-23 CBVK741B019 F63TNR MMBT5179 MPS5179 PN2222N PN5179 TRANSISTOR C 3223 PDF

    Untitled

    Abstract: No abstract text available
    Text: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency


    Original     		PN5179 MMBT5179 OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*


    Original     		MPSH81 MMBTH81 MPSH81 OT-23 PDF

    mpsh81 model

    Abstract: MMBTH81 CBVK741B019 F63TNR MPSH81 PN2222N NE-21 BF-133
    Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*


    Original     		MPSH81 MMBTH81 MPSH81 OT-23 mpsh81 model MMBTH81 CBVK741B019 F63TNR PN2222N NE-21 BF-133 PDF

    BSV52

    Abstract: SOT23 BSV52 mark B1 sot23
    Text: BSV52 BSV52 C E SOT-23 B Mark: B2 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


    Original     		BSV52 OT-23 BSV52 SOT23 BSV52 mark B1 sot23 PDF

    Untitled

    Abstract: No abstract text available
    Text: PN2369A / MMBT2369A PN2369A MMBT2369A C E C B TO-92 B SOT-23 E Mark: 1S NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol


    Original     		PN2369A MMBT2369A PN2369A OT-23 PDF

    PN4258

    Abstract: CBVK741B019 F63TNR MMBT4258 PN2222N
    Text: PN4258 / MMBT4258 MMBT4258 PN4258 C E C B TO-92 B SOT-23 E Mark: 78 PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PN4258 MMBT4258 PN4258 OT-23 CBVK741B019 F63TNR MMBT4258 PN2222N PDF

    switching transistor 331

    Abstract: CBVK741B019 F63TNR MMBT2369A PN2222N PN2369A
    Text: PN2369A / MMBT2369A PN2369A MMBT2369A C E C B TO-92 B SOT-23 E Mark: 1S NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol


    Original     		PN2369A MMBT2369A PN2369A OT-23 switching transistor 331 CBVK741B019 F63TNR MMBT2369A PN2222N PDF

    6dr6

    Abstract: No abstract text available
    Text: 1234567 Voltage Regulator with LIN Transceiver 89ABCD9E7 o o Compatible to LIN Specification 2.0 and SAE J2602 Operating voltage VS = 6 . 18 V Low standby current consumption of typ. 15 µA in sleep mode 1 “noload” current < 200µA o Linear low drop voltage regulator 5V/70mA ±2%


    Original     		89ABCD9E7 J2602 V/70mA ISO9141 J2602 ISO14001 TH8062 6dr6 PDF

    PN5179

    Abstract: CBVK741B019 F63TNR MMBT5179 MPS5179 PN2222N TRANSISTOR C 3223 MJC2
    Text: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency


    Original     		PN5179 MMBT5179 OT-23 PN5179 CBVK741B019 F63TNR MMBT5179 MPS5179 PN2222N TRANSISTOR C 3223 MJC2 PDF

    03n06

    Abstract: MOSFET 60V 210A 03N06C RLD03N06CLE RLD03N06CLESM RLD03N06CLESM9A RLP03N06CLE TB334 65E6
    Text: RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE Data Sheet January 2002 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs Features • 0.30A, 60V These are intelligent monolithic power circuits which incorporate a lateral bipolar transistor, resistors, zener


    Original     		RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE 03n06 MOSFET 60V 210A 03N06C RLD03N06CLE RLD03N06CLESM RLD03N06CLESM9A RLP03N06CLE TB334 65E6 PDF

    laser diode spice modeling

    Abstract: laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136
    Text: Application Design Tools Services and Applications Literature Hewlett-Packard customers are supported by an Applications Engineering Department. The applications engineering staff investigates circuit applications, design techniques, and device performance. The results of these


    Original     		42E-13 04E-1 53E-13 5E-12 87E-2 1E-14) INA-12 900MHz 900E6) laser diode spice modeling laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136 PDF

    switching transistor 331

    Abstract: CBVK741B019 F63TNR MMBT2369A PN2222N PN2369A 1073 PN222N label
    Text: PN2369A / MMBT2369A PN2369A MMBT2369A C E C B TO-92 B SOT-23 E Mark: 1S NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol


    Original     		PN2369A MMBT2369A PN2369A OT-23 switching transistor 331 CBVK741B019 F63TNR MMBT2369A PN2222N 1073 PN222N label PDF

    PN4258

    Abstract: PN2222N CBVK741B019 F63TNR MMBT4258
    Text: PN4258 / MMBT4258 MMBT4258 PN4258 C E C B TO-92 B SOT-23 E Mark: 78 PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PN4258 MMBT4258 PN4258 OT-23 PN2222N CBVK741B019 F63TNR MMBT4258 PDF