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    BF-960 SPICE MODEL Search Results

    BF-960 SPICE MODEL Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    TPS6508700RSKR Texas Instruments PMIC for AMD™ family 17h models 10h-1Fh processors 64-VQFN -40 to 85 Visit Texas Instruments
    TPS6508700RSKT Texas Instruments PMIC for AMD™ family 17h models 10h-1Fh processors 64-VQFN -40 to 85 Visit Texas Instruments Buy

    BF-960 SPICE MODEL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT1149A ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -25V * 4 Amp Continuous Current * 10 Amp Pulse Current * Low Saturation voltage * High Gain C E C B SOT223 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE


    Original     		PDF FZT1149A OT223 asse-13 2e-13 5E-13 20e-3 150e-3 10e-3 490e-12 150e-12

    FZT1149A

    Abstract: DSA003675
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT1149A ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -25V * 4 Amp Continuous Current * 10 Amp Pulse Current * Low Saturation voltage * High Gain C E C B SOT223 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE


    Original     		PDF FZT1149A OT223 5e-13 2e-13 20e-3 150e-3 10e-3 490e-12 150e-12 FZT1149A DSA003675

    Untitled

    Abstract: No abstract text available
    Text: GA10SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


    Original     		PDF GA10SICP12-247 O-247AB 427E-12 1373E-12 0E-03 GA10SICP12 55E-15 71739E-05 40E-10 00E-10

    Untitled

    Abstract: No abstract text available
    Text: GA20SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


    Original     		PDF GA20SICP12-247 O-247AB 0SICP12 GA20SICP12 833E-48 073E-26 752E-12 01E-09 50E-03

    Untitled

    Abstract: No abstract text available
    Text: GA20SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack VDS RDS ON ID (Tc = 25°C) ID (Tc = 145°C) hFE (Tc = 25°C) Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch


    Original     		PDF GA20SICP12-263 O-263-7L) Applicatio0SICP12 GA20SICP12 833E-48 073E-26 752E-12 01E-09 50E-03

    Untitled

    Abstract: No abstract text available
    Text: GA10SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


    Original     		PDF GA10SICP12-263 O-263-7L) 427E-12 1373E-12 0E-03 GA10SICP12 55E-15 71739E-05 40E-10 00E-10

    Untitled

    Abstract: No abstract text available
    Text: GA50SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


    Original     		PDF GA50SICP12-227 OT-227 833E-48 073E-26 398E-9 026E-09 0E-03 GA50SIPC12 99E-16 3E-05

    Untitled

    Abstract: No abstract text available
    Text: GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


    Original     		PDF GA100SICP12-227 833E-48 073E-26 398E-9 026E-09 0E-03 GA100SIPC12 99E-16 3E-05 86E-09

    CBC 184 transistor

    Abstract: TRANSISTOR cBC 449 t1c8 BF 145 transistor 448 2222A CBC 184 c transistor AT-31625 AT-31625-TR1 transistor 2222a 96t1
    Text: 4.8 V NPN Common Emitter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% Collector Efficiency @␣ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz,


    Original     		PDF AT-31625 OT-223 AT-31625 CBC 184 transistor TRANSISTOR cBC 449 t1c8 BF 145 transistor 448 2222A CBC 184 c transistor AT-31625-TR1 transistor 2222a 96t1

    CBC 184 transistor

    Abstract: CBC 184 c transistor transistor 2222a data sheet AT-31625 AT-31625-BLK AT-31625-TR1
    Text: 4.8 V NPN Common Emitter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% Collector Efficiency @ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz,


    Original     		PDF AT-31625 OT-223 AT-31625 5965-5911E CBC 184 transistor CBC 184 c transistor transistor 2222a data sheet AT-31625-BLK AT-31625-TR1

    BV-1 501

    Abstract: BF-960 spice model LT1715 spice model Transistor TT 2246 cd 6283 ic transistor KF 507 LT1716 spice model COMP1016 lt6234 spice model AUO-11307 R01
    Text: linear.txt SPICE MODELS - LINEAR Technology Corp. LTC1150 * Version 2.0 Copyright Linear Technology Corp. 10/19/05. All rights reserved. * .SUBCKT LTC1150 3 2 7 4 6 ; +IN -IN V+ V- OUT * INPUT IB1 2 7 -10P IB2 3 7 10P RD1 4 80 2122.1 RD2 4 90 2122.1 M1 80 2 12 12 PM1


    Original     		PDF LTC1150 LTC1150 5e-12 5e-11 2857E-11 65e-11 7124E-04 3e-11 9605e-8 74902E-10 BV-1 501 BF-960 spice model LT1715 spice model Transistor TT 2246 cd 6283 ic transistor KF 507 LT1716 spice model COMP1016 lt6234 spice model AUO-11307 R01

    testing motherboards using multi meter

    Abstract: AMD-K6 AM-290 FERRITE BEAD 1000 OHM 0805 CS44E AMD-K6 Processor Hall sensors Siemens Magnetic Products, Soft Ferrites, Data Handbook Northbridge AMD K6
    Text: AMD-K6 Processor ® EMI DESIGN CONSIDERATIONS Application Note Publication # 22023 Rev: C Issue Date: April 2000 Amendment/0 2000 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced


    Original     		PDF

    smd diode J476

    Abstract: VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3
    Text: Device Data Library WIRELESS RF PRODUCT DEVICE DATA DL110/D Rev. 14 2/2003 wireless Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


    Original     		PDF DL110/D smd diode J476 VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3

    COP884

    Abstract: No abstract text available
    Text: COP688CL/COP684CL, COP888CL/COP884CL, COP988CL/COP984CL 8-Bit Microcontroller General Description The COP888 family of microcontrollers uses an 8-bit single chip core architecture fabricated with National Semiconductor’s M2CMOS process technology. The COP888CL is a


    Original     		PDF COP688CL/COP684CL, COP888CL/COP884CL, COP988CL/COP984CL COP888 COP888CL 16-bit AN-1099: COP884

    qualcomm msm 8660

    Abstract: ecu repair proton rx 4000 watts power amplifier circuit diagram preamplifier proton 1100 MOBILE jammer GSM 1800 MHZ circuit diagram Qualcomm 8200 proton rx 3000 RF2713 433MHz saw Based Transmitter Schematic and PCB La RF2517
    Text:                 1      2        3         4       5    6      7 ! " 8      #  9 !   


    Original     		PDF RF2043 RF2044 RF2045 RF2046 RF2047 RF2048 RF2103P org/jedec/download/std020 qualcomm msm 8660 ecu repair proton rx 4000 watts power amplifier circuit diagram preamplifier proton 1100 MOBILE jammer GSM 1800 MHZ circuit diagram Qualcomm 8200 proton rx 3000 RF2713 433MHz saw Based Transmitter Schematic and PCB La RF2517

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT11*9A ISSUE 1 - JANUARY - FEATURES * * VCEO=-25V 4 Am p Continuous Current * * 10 A m p Pulse Current Low Saturation voltage * High Gain ABSOLUTE MAXIMUM RATINGS.


    OCR Scan     		PDF FZT11 5E-13NC 20e-3 150e-3 10e-3 490e-12 150e-12 4739TF

    transistor I 17-13 0773

    Abstract: No abstract text available
    Text: H EW L E T T I x l PA CK A R D w a rn 4.8 V NPN Common Emitter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. • 70% Collector Efficiency @ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz,


    OCR Scan     		PDF AT-31625 OT-223 AT-31625 transistor I 17-13 0773

    FZH 161

    Abstract: FZH 111 FZH 181 transistor I 17-13 0773 CBC 184 transistor FZH 175 S3230 FZH 165 FZH 165 b fzh 171
    Text: What HEWLETT wHHM P A C K A R D 4.8 V NPN Common Em itter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% C ollector Efficiency


    OCR Scan     		PDF AT-31625 OT-223 AT-31625 5965-5911E FZH 161 FZH 111 FZH 181 transistor I 17-13 0773 CBC 184 transistor FZH 175 S3230 FZH 165 FZH 165 b fzh 171

    IC pt 2399 CIRCUIT DIAGRAM

    Abstract: AT-31625 Z-135 transistor pn 2222a Z-179 A74 SOT-223 sn 0426 z15a Z-156 Z156
    Text: W hn% H E W L E T T 1"UM P A C K A R D 4.8 V NPN Common E m itter M edium Pow er O utput T ransistor Technical Data AT-31625 F eatu res • 4.8 V olt O peration • +28.0 dBm P out @ 900 MHz, Typ. MSOP-3 Surface M ount P lastic Package O utlin e 25 • 70% C o llecto r E fficien cy


    OCR Scan     		PDF AT-31625 OT-223 5965-5911E 4447SÃ IC pt 2399 CIRCUIT DIAGRAM Z-135 transistor pn 2222a Z-179 A74 SOT-223 sn 0426 z15a Z-156 Z156

    BF547A

    Abstract: transistor bf 175 BFG65 equivalent BF547B BFG25AXD
    Text: Philips Sem iconductors RF Wideband Transistors The New Generation Contents page PREFACE 3 SELECTION GUIDE 6 S-PARAMETERS 22 SPICE AND PACKAGE PARAMETERS 44 THERMAL CHARACTERISTICS 48 DEVICE DATA in alpha-num eric sequence 54 OUTLINES 442 INDEX 448 DEFINITIONS


    OCR Scan     		PDF LCD01 BF547A transistor bf 175 BFG65 equivalent BF547B BFG25AXD

    chw marking sot23

    Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
    Text: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu


    OCR Scan     		PDF

    Horizontal Transistor TT 2246

    Abstract: ca3080 spice vogt transformer 406 69 CA3098 equivalent ICL8038 applications advantages disadvantages gi 9544 class d amplifier schematic hip4080 STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY siemens transistor manual BUF601
    Text: New High Speed Linear Products VIDEO OP AMPS AND BUFFERS HFA1105 LOW POWER VIDEO OP AMP HFA1115 I LOW POWER PROGRAMMABLE GAIN VIDEO BUFFER [ AnswerFAX DOCUMENT # 3395 AnswerFAX DOCUMENT * 3606 • -3dB Bandwidth Ay * + 2 . 350MHz


    OCR Scan     		PDF HFA1105 HFA1115 350MHz 225MHz 000V/ps 50MHz. Horizontal Transistor TT 2246 ca3080 spice vogt transformer 406 69 CA3098 equivalent ICL8038 applications advantages disadvantages gi 9544 class d amplifier schematic hip4080 STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY siemens transistor manual BUF601

    HRMA-0470B

    Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
    Text: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic


    OCR Scan     		PDF E-28230 S-164 CH-8902 HRMA-0470B Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503