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E-Switch Inc TL1105BF100Q SWITCH TACTILE SPST-NO 0.05A 12V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TL1105BF100Q	Bulk	4,736		1	1 $0.25 10 $0.201 100 $0.1635 1000 $0.13591 10000 $0.11313	Buy Now
Master Electronics	TL1105BF100Q		5,547			1 - 10 - 100 - 1000 $0.0974 10000 $0.0837	Buy Now
New Advantage Corporation	TL1105BF100Q		4,500		1	1 - 10 - 100 - 1000 - 10000 $0.1111	Buy Now
GCT Semiconductor Inc BF100-12-A-C-0-0625-L-C 12POS, 2MM PITCH SOCKET, DIL, SM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BF100-12-A-C-0-0625-L-C	Cut Tape	4,243		1	1 $0.92 10 $0.752 100 $0.92 1000 $0.92 10000 $0.92	Buy Now
	BF100-12-A-C-0-0625-L-C	Digi-Reel	4,243		1	1 $0.92 10 $0.752 100 $0.92 1000 $0.92 10000 $0.92	Buy Now
	BF100-12-A-C-0-0625-L-C	Reel	2,700		900	1 - 10 - 100 - 1000 $0.50414 10000 $0.4325	Buy Now
Newark	BF100-12-A-C-0-0625-L-C	Reel	1,800		900	1 - 10 - 100 - 1000 $0.715 10000 $0.715	Buy Now
	BF100-12-A-C-0-0625-L-C	Cut Tape	1,760		1	1 $1.1 10 $0.977 100 $0.855 1000 $0.715 10000 $0.715	Buy Now
GCT Semiconductor Inc BF100-10-A-C-1-0625-L-C 10POS, 2MM PITCH SOCKET, DIL, SM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BF100-10-A-C-1-0625-L-C	Digi-Reel	2,964		1	1 $0.82 10 $0.664 100 $0.82 1000 $0.82 10000 $0.82	Buy Now
	BF100-10-A-C-1-0625-L-C	Cut Tape	2,964		1	1 $1.09 10 $0.829 100 $1.09 1000 $1.09 10000 $1.09	Buy Now
	BF100-10-A-C-1-0625-L-C	Reel	1,800		900	1 - 10 - 100 - 1000 $0.50002 10000 $0.39933	Buy Now
Newark	BF100-10-A-C-1-0625-L-C	Reel	1,800		900	1 - 10 - 100 - 1000 $0.624 10000 $0.624	Buy Now
	BF100-10-A-C-1-0625-L-C	Cut Tape	1,541		1	1 $0.96 10 $0.853 100 $0.746 1000 $0.624 10000 $0.624	Buy Now
GCT Semiconductor Inc BF100-14-A-D-0-0640-L-C 14POS, 2MM PITCH SOCKET, DIL, SM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BF100-14-A-D-0-0640-L-C	Reel	2,550		850	1 - 10 - 100 - 1000 $0.42981 10000 $0.36125	Buy Now
Newark	BF100-14-A-D-0-0640-L-C	Cut Tape	1,700		1	1 $0.918 10 $0.816 100 $0.714 1000 $0.598 10000 $0.598	Buy Now
onsemi FDP053N08B-F102 MOSFET N-CH 80V 75A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDP053N08B-F102	Tube	1,520		1	1 $2.81 10 $2.81 100 $2.81 1000 $0.93752 10000 $0.87513	Buy Now
Rochester Electronics	FDP053N08B-F102		53,258		1	1 $0.9724 10 $0.9724 100 $0.9141 1000 $0.8265 10000 $0.8265	Buy Now
Richardson RFPD	FDP053N08B-F102				800	1 - 10 - 100 - 1000 $0.88 10000 $0.88	Buy Now
Avnet Silica	FDP053N08B-F102			16 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	FDP053N08B-F102		800			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Find more BF10 price and stock on Findchips.com

BF10 Datasheets (138)

Part	Manufacturer	Description	Datasheet Type	PDF
BF-100.000MBE-T	TXC	Oscillators, Crystals and Oscillators, OSC XO 100.000MHZ LVDS SMD	Original	PDF
BF-100.000MCE-T	TXC	Oscillators, Crystals and Oscillators, OSC XO 100.000MHZ LVDS SMD	Original	PDF
BF100-06-A-C-0-0625-N-D	GCT Semiconductor	6W, 2MM PITCH SOCKET, DIL, SMT,	Original	PDF
BF100-08-A-C-0-0625-N-D	GCT Semiconductor	8W, 2MM PITCH SOCKET, DIL, SMT,	Original	PDF
BF1000A	Seiko Epson	Surface Mount Crystal Oscillators	Original	PDF
BF-1001	Essentra Components Catalog	Bumpers, Feet, Pads, Grips, Hardware, Fasteners, Accessories, FOOT 1.57 X .35IN BLACK	Original	PDF
BF100-10-A-C-0-0625-N-D	GCT Semiconductor	10W, 2MM PITCH SOCKET, DIL, SMT,	Original	PDF
BF100-12-A-C-0-0625-N-D	GCT Semiconductor	12W, 2MM PITCH SOCKET, DIL, SMT,	Original	PDF
BF100-14-A-C-0-0625-N-D	GCT Semiconductor	14W, 2MM PITCH SOCKET, DIL, SMT,	Original	PDF
BF100-16-A-C-0-0625-N-D	GCT Semiconductor	16W, 2MM PITCH SOCKET, DIL, SMT,	Original	PDF
BF100-18-A-C-0-0625-N-D	GCT Semiconductor	18W, 2MM PITCH SOCKET, DIL, SMT,	Original	PDF
BF-1002	Essentra Components Catalog	Bumpers, Feet, Pads, Grips, Hardware, Fasteners, Accessories, BUMPERS/FEET BLACK 1.18"CUSH DIA	Original	PDF
BF100-20-A-C-0-0625-N-D	GCT Semiconductor	20W, 2MM PITCH SOCKET, DIL, SMT,	Original	PDF
BF100-22-A-C-0-0625-N-D	GCT Semiconductor	22W, 2MM PITCH SOCKET, DIL, SMT,	Original	PDF

BF100-24-A-C-0-0625-N-D	GCT Semiconductor	24W, 2MM PITCH SOCKET, DIL, SMT,	Original	PDF
BF100-26-A-C-0-0625-N-D	GCT Semiconductor	26W, 2MM PITCH SOCKET, DIL, SMT,	Original	PDF
BF100-28-A-C-0-0625-N-D	GCT Semiconductor	28W, 2MM PITCH SOCKET, DIL, SMT,	Original	PDF
BF100-30-A-C-0-0625-N-D	GCT Semiconductor	30W, 2MM PITCH SOCKET, DIL, SMT,	Original	PDF
BF-10032	Honeywell Sensing and Productivity Solutions	Switches - Snap Action, Limit Switches - SWITCH PLAIN BEARING	Original	PDF
BF100-32-A-C-0-0625-N-D	GCT Semiconductor	32W, 2MM PITCH SOCKET, DIL, SMT,	Original	PDF

...

BF10 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 5 1 2 3 4 Global Connector Technology Ltd. - BF105: 2.0mm PITCH SOCKET, DUAL ROW, THROUGH HOLE, HORIZONTAL, SIDE ENTRY 6 7 8 A A B B C C D D E E SPECIFICATIONS 规格 CURRENT RATING 电流额定值：2.0 AMP INSULATION RESISTANCE 绝缘电阻值：1000 MΩ Min.	Original	BF105: BF105-001 BF105	PDF
Untitled Abstract: No abstract text available Text: 1 2 3 Global Connector Technology Ltd. - BF100: 2.0mm PITCH SOCKET, DUAL ROW, SURFACE MOUNT 5 4 6 7 8 A A B B C C D D E E SPECIFICATIONS 规格 Ordering Grid CURRENT RATING 电流额定值: 2 AMP INSULATOR RESISTANCE 绝缘电阻值: 1000 MEGOHMS MIN. BF100 XX	Original	BF100: BF100 20mOHMS 94-V0 BF100	PDF
BF1005SR Abstract: BF1005 BF1005S BF1005SW Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1005S. EHA07215 BF1005S OT143 BF1005SR OT143R BF1005SW OT343 Feb-18-2004 BF1005SR BF1005 BF1005S BF1005SW	PDF
BF1005 Abstract: VPS05178 Text: BF1005 Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 5V Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1005 VPS05178 EHA07215 OT143 Jun-28-2001 200MHz BF1005 VPS05178	PDF
BF1009SR Abstract: No abstract text available Text: BF1009SR Dual - MOS FET Monolithic Integrated Circuit For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated stabilized bias network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1009SR EHA07215 OT143R Dec-04-2002 200MHz BF1009SR	PDF
BF1009SW Abstract: No abstract text available Text: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1009S. EHA07215 BF1009S BF1009SR OT143 OT143R BF1009S, BF1009SR BF1009W BF1009SW	PDF
BF1005S Abstract: VPS05178 Text: BF1005S Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 5V Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1005S VPS05178 EHA07215 OT143 Jun-28-2001 200MHz BF1005S VPS05178	PDF
BF1005SR Abstract: marking NZs Text: BF1005SR Dual - MOS FET Monolithic Integrated Circuit For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1005SR EHA07215 OT143R Oct-19-2001 200MHz BF1005SR marking NZs	PDF
BF1005SR Abstract: No abstract text available Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1005S. EHA07215 BF1005S BF1005SR BF1005SW OT143 OT143R OT343 BF1005S,	PDF
BF1009SW Abstract: BF1009S BF1009SR BF1009W Text: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1009S. EHA07215 BF1009S OT143 BF1009SR OT143R Feb-18-2004 200MHz BF1009SW BF1009S BF1009SR BF1009W	PDF
Untitled Abstract: No abstract text available Text: 3 1 2 4 Global Connector Technology Ltd. - BF105: 2.0mm PITCH SOCKET, DUAL ROW, THROUGH HOLE, HORIZONTAL, SIDE ENTRY 5 6 7 8 A A B B C C D D E E SPECIFICATIONS 规格 CURRENT RATING 电流额定值： 2.0 AMPERE INSULATION RESISTANCE 绝缘电阻值： 1000M Ω Min.	Original	BF105: 1000M 94-V0 I0250 BF105	PDF
BF1009S Abstract: VPS05178 Text: BF1009S Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 9V Integrated bias network 2 Drain AGC HF Input G2 G1 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1009S VPS05178 EHA07215 OT143 Jun-28-2001 200MHz BF1009S VPS05178	PDF
BF1009SW Abstract: marking g1s Text: BF1009SW Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled 4 input stages up to 1GHz Operating voltage 9V Integrated bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05605 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1009SW VPS05605 EHA07215 OT343 Jun-28-2001 200MHz BF1009SW marking g1s	PDF
BF1005 Abstract: BF1005R BF1005W BFP181 BFP181R Text: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Drain AGC RF Input	Original	BF1005. BF1005 OT143 BF1005R OT143R BF1005 BF1005R BF1005W BFP181 BFP181R	PDF

Untitled Abstract: No abstract text available Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1005S. EHA07215 BF1005S BF1005SR BF1005SW OT143 OT143R OT343 BF1005S,	PDF
BF1009SW Abstract: BF1009 marking code g2s Text: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1009S. EHA07215 BF1009S BF1009SR OT143 OT143R BF1009S, BF1009SR BF1009W BF1009SW BF1009 marking code g2s	PDF
Untitled Abstract: No abstract text available Text: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC RF Input G2 G1 RF Output + DC GND ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1005. BF1005 BF1005R OT143 OT143R	PDF
bf1012s Abstract: BF1012 VPS05178 Text: BF1012S Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 12V Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1012S VPS05178 EHA07215 OT143 Jun-28-2001 200MHz bf1012s BF1012 VPS05178	PDF
CRYDOM BF100 Abstract: PA100V 24V to 0-10v POTENTIOMETER BF100V angle phase control PA100V-0-10V PA100 4-20ma ssr 100C Text: C3VZDDM BF100 and PA100 EUROPE SSR Control Modules Features: □ Burst Firing and Phase Angle control versions □ Directly mounted to SSR □ LED output indication □ Remote or local control BF100 Series modules are time proportional "Burst Firing" controllers for use with zero	OCR Scan	BF100andPA100 BF100 400msecs PA100 4-20mA PA100V-0-10V BF100C-F3 200ms CRYDOM BF100 PA100V 24V to 0-10v POTENTIOMETER BF100V angle phase control 4-20ma ssr 100C	PDF
Y3ES Abstract: BF1012 marking ag1 marking S98 BF1012W Marking kx Mosfet Silicon N Channel MOSFET Tetrode Text: S IE M E N S Prelim inary Data BF1012W SILICON N-CHANNEL MOSFET TETRODE • For low-noisa, gain-controlled inpul stages up tü 1 G H z • • O perating volt&ge 12 V Inlegrated bias Network 1 T yp e M ark in g O rd e rin g C o d e Pin C ä h fig u r a tiü i	OCR Scan	BF1Q12W U62703-F1S OT343 BF1012W Y3ES BF1012 marking ag1 marking S98 Marking kx Mosfet Silicon N Channel MOSFET Tetrode	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BF1012S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! BF 1012S	OCR Scan	BF1012S Q62702-F1627 1012S T-143 200MHz	PDF
siemens MOSFET 14 Abstract: Marking G1s Text: SIEMENS BF1009S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network Z AGC o - X - HF o Input Droin G21 HF O utput + DC G1 1 GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	BF1009S EHA07215 1009S Q62702-F1628 OT-143 200MHz 200MHz siemens MOSFET 14 Marking G1s	PDF
GBF10M1 Abstract: BF10K2 GLF05F1 CF10N 20-TAP Text: A Passive Surface-Mount Delay Lines Designed for automatic insertion. 10-Tap Chip-Carrier Passive Delay Line— V2 " Sq. Part No. Part No. Part No. BJF10D1Œ GBF1OD10D BJF10F1S BF10F1Œ BF10D1Œ BF10F1 Hi BJF10G1Œ BJF10K1 BF10G1Œ BF10K1 BJF10L1 BJF10M1	OCR Scan	10-Tap BJF10D1OE BJF10F1S) BJF10G1OE BJF10K1 BJF10L1 BJF10M1 GBF1OD10D GBF10F1OE GBF10G1OE GBF10M1 BF10K2 GLF05F1 CF10N 20-TAP	PDF
DB1-822 Abstract: BF1012 Text: SIEMENS BF1012S Silicon N-Channel MOSFET Tetrode X AGC o HF o— Input - X Drain G2 I HF Output + DC Gl 1 GND ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code PIN Configuration BF 1012S NYs Q62702-F1627	OCR Scan	BF1012S 1012S Q62702-F1627 OT-143 800MHz 1012S DB1-822 BF1012	PDF

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BF10 Search Results

BF10 Price and Stock

E-Switch Inc TL1105BF100Q

GCT Semiconductor Inc BF100-12-A-C-0-0625-L-C

GCT Semiconductor Inc BF100-10-A-C-1-0625-L-C

GCT Semiconductor Inc BF100-14-A-D-0-0640-L-C

onsemi FDP053N08B-F102

BF10 Datasheets (138)

BF10 Datasheets Context Search

Untitled

Untitled

BF1005SR

BF1005

BF1009SR

BF1009SW

BF1005S

BF1005SR

BF1005SR

BF1009SW

Untitled

BF1009S

BF1009SW

BF1005

Untitled

BF1009SW

Untitled

bf1012s

CRYDOM BF100

Y3ES

Untitled

siemens MOSFET 14

GBF10M1

DB1-822