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    BF173 TRANSISTOR Search Results

    BF173 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    BF173 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BF173 Transistor

    Abstract: BF173 bf173 datasheet c 2579 power transistor
    Text: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF173 TO-72 Metal Can Package For use in LF Video Amplifier uncontrolled stages of Television Receivers.


    Original     		BF173 C-120 BF173Rev 220503D BF173 Transistor BF173 bf173 datasheet c 2579 power transistor PDF

    BF173

    Abstract: BF173 Transistor BF 145 transistor 569-GS transistor bc 7-40
    Text: TELEFUNKEN ELECTRONIC filC D WÊ fiRSDGTb OOGSlbM BF173 '¡TitLitFOJJKliKGlM electronic Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: Video IF amplifier stages In common emitter configuration, especially In video IF power stages


    OCR Scan     		BF173 569-GS BF173 BF173 Transistor BF 145 transistor transistor bc 7-40 PDF

    BF173

    Abstract: BF173 Transistor 3430J to-72j 364MHz
    Text: Ul BF 173 NFN SILICON PLANAR EPITAXIAL TRANSISTOR MICRO E E E L —EECDTTROrsllCSS CASE T 0 -7 2 J THE BF173 IS AN NFN SILICON PLANAR EPITAXIAL TRANSISTOR INTENDED FOR USE IN VIDEO IF AMPLIFIERS AND PARTICULAR FOR THE OUTPUT STAGES. ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		BF173 O-72J 200mA TELEX-33510 430J81 35MHz BF173 Transistor 3430J to-72j 364MHz PDF

    BF311

    Abstract: BF374 BF494 bf199 BF199 BF253
    Text: RF-IF High Frequency Transistors MAXIMUM RATINGS TYPE NO. POLA­ RITY H fE V eti* * Ic mA) V cE O (mW) Pd (V) min max BF115 BF155 BF167 BF173 BF180 N N N N N TO-72J TO-72G TO-72J TO-72J TO-72G 165 200 150 260 150 30 20 25 25 20 30 40 30 25 20 48 20 27 38


    OCR Scan     		BF115 BF155 BF167 BF173 BF180 BF181 BF311 BF374 BF494 bf199 BF199 BF253 PDF

    Untitled

    Abstract: No abstract text available
    Text: Al BF 173 NFN SILICON PLANAR EPITAXIAL TRANSISTOR M IC R O EEEL— EE CD " T R O r s i I S CASE T0-72J THE BF173 IS AN NFN SILICON PLANAR EPITAXIAL TRANSISTOR INTENDED FOR USE IN VIDEO IF AMPLIFIERS AND PARTICULAR FOR THE OUTPUT STAGES. ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		T0-72J BF173 200mA 09g4g3 35MHz PDF

    BF173 Transistor

    Abstract: BF173
    Text: BF 173 IV! I C R a NPN SILICON PLANAR EPITAXIAL TRANSISTOR ΠL_ΠC T"F* o r s i I C S CASE T0-72J THE BF173 IS AN NFN SILICON PLANAR EPITAXIAL TRANSISTOR INTENDED FOR USE IN VIDEO IF AMPLIFIERS AND PARTICULAR FOR THE OUTPUT STAGES. ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		BF173 T0-72J 200mA 10jiA 100MHz BF173 Transistor PDF

    BF167

    Abstract: 2SC2570 2N4259 BF180 2N4134 2N3932 2N3933 2N4135 BF173 BF181
    Text: TO-72 METAL-CAN PACKAGE TRANSISTORS NPN Maximum Ratings Type No. VCB0 VCE0 VEBO (V) (V) (V) Min Min Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) CDIL 'cBO *r 'c NF O Freq VCB hFE 0 'c * VCE VCE(Sat) & VBE(Sal) ® !C 'ces ® vce Cot


    OCR Scan     		2N3933 2N4134 2N4135 2N4259 BF167 O-72-1 2N918 2N2857 2N3478 2N3600 2SC2570 BF180 2N3932 BF173 BF181 PDF

    2N3933

    Abstract: BF180 BF181 2sc2570 2N3932 2N4134 2N4135 BF167 BF173 BF182
    Text: TO-72 METAL-CAN PACKAGE TRANSISTORS NPN E lectrical C haracteristics Maxim um R atings Type No. ts o (MA) hFE VCB « VCB0 VCE0 V EB0 (V) Min (V) Min (V) Min 2N3933 40 30 2.5 0.01 15 60 200 2 2N4134 30 30 3.0 0.05 10 25 200 2N4135 30 30 3.0 0.05 10 25 2N42S9


    OCR Scan     		2N3933 2N4134 2N4135 2N42S9 BF167 O-72-1 2N2857 2N3478 2N3600 2NS180 BF180 BF181 2sc2570 2N3932 BF173 BF182 PDF

    AC127

    Abstract: CV7089 AC125 2SB415 OC71 ad161 cv8615 HJ17D ad142 2N3278
    Text: First Published P’ebruary, 1971 Reprinted, June 71 Reprinted, July 71 Reprinted, January 72 Reprinted, March 72 Reprinted, June 72 Reprinted, August 72 We invite all authors, whether new or well established, to submit manuscripts for pub­ lication. The manuscripts may deal with any


    OCR Scan     		2N24A 2N34A 2N38A 2N43A 2N44A 2N59C 2N60A 2N61A 2N61B OC77-309, AC127 CV7089 AC125 2SB415 OC71 ad161 cv8615 HJ17D ad142 2N3278 PDF

    BF167

    Abstract: BF200 transistor BF180 transistor 2sc2570 2n3600 2N4135 BFL84 2N3932 2N3933 2N4134
    Text: TO-72 METAL-CAN PACKAGE TRANSISTORS NPN E lectrical C haracteristics Maxim um R atings Type No. ts o (MA) hFE VCB « VCBO VCE0 V EBO (V) Min (V) Min (V) Min 2N3933 40 30 2.5 0.01 15 60 200 2 2N4134 30 30 3.0 0.05 10 25 200 2N4135 30 30 3.0 0.05 10 25 2N42S9


    OCR Scan     		2N3933 2N4134 2N4135 2N42S9 BF167 2N2857 2N3478 2N3600 2NS180 MRFS01 BF200 transistor BF180 transistor 2sc2570 BFL84 2N3932 PDF

    BF311

    Abstract: BF200 transistor BF494 bf199 BF184 BF494 BF494 BF271 BF597 BFX60 BF184 Bf240
    Text: RF-IF High Frequency Transistors POLA­ RITY IC mA VCE (V) max (V) IC (mA) min (MHz) 1 3 3 2.5 4 10 6 12 10 10 _ 0.5 0.5 0.3 0.5 . 10 10 10 10 230+ 600 300 400 700+ 0.8* 1.2 1.2 0.4+* 1.2* 3.5+ 9 3.5 CASE Pd (mW) IC (mA) VCEO (V) min max N.F. Cob Cre* max


    OCR Scan     		BF115 O-72J BF152 O-106 BF153 BF155 O-72G BF158 BF311 BF200 transistor BF494 bf199 BF184 BF494 BF494 BF271 BF597 BFX60 BF184 Bf240 PDF

    BF311

    Abstract: BF494 bf199 BF115 BF158 BF152 BF153 BF155 BF159 BF314 BF167
    Text: RF-IF High Frequency Transistors POLA­ RITY IC mA VCE (V) max (V) IC (mA) min (MHz) 1 3 3 2.5 4 10 6 12 10 10 _ 0.5 0.5 0.3 0.5 . 10 10 10 10 230+ 600 300 400 700+ 0.8* 1.2 1.2 0.4+* 1.2* 3.5+ 9 3.5 4 3 4 7 2 10 10 10 10 10 10 10 10 - 700+ 400 300+ 350


    OCR Scan     		BF115 O-72J BF152 O-106 BF153 BF155 O-72G BF158 BF311 BF494 bf199 BF159 BF314 BF167 PDF

    bf173

    Abstract: bf182
    Text: DIM A MIN MAX 5,84 B 5,24 4,52 C D 4,31 0,40 5,33 E - 0,76 4,95 0,53 F 1,14 1,39 G H 2,28 2,97 0,91 0,71 12,7 1,17 1,22 - 12 DEG 48 DEG J K L ALL DIMENSIONS ARE IN M.M. Pin Configuration Available'in TO-72 CDIL Code Style PIN 1 TO-72 PIN 2 PIN 3 PIN 4 Case


    OCR Scan     		O-72-1 O-72-2 2N3933 2N5179 O-72-' BF181 BF184 BF200 BF182 bf173 bf182 PDF

    bf311

    Abstract: BF494 BF253 BF595 BF200 transistor BF271 BF115 BF153 BF158 BF184
    Text: TYPE NO. P O L A R IT Y RF-1F High Frequency Transistors M A X IM U M R A T IN G S Pd ImWI 'c Im A V C EO V ) fT min Cob Cre« max max (MHz) (pF) (dB) 230+ 600 300 400 700+ 0.8 • 1.2 1.2 0.4+ • 1.2 • 3.5+ — — 9 3.5 700+ 400 300+ 350 675+ 1.2 •


    OCR Scan     		BF115 O-72J BF152 O-106 BF153 BF155 O-72G BF158 bf311 BF494 BF253 BF595 BF200 transistor BF271 BF184 PDF

    2N918 pin configuration

    Abstract: 2SC2570 BF115 2N3933 BF167 BF173 BF180 BF181 2N5179 2N917
    Text: TO-72 — A — J— B — DIM A B C D E F G H J K L f o 1 UJ IL X D MIN MAX 5,24 5,84 4,52 4,95 4,31 5,33 0,40 0,53 0,76 1,14 • 1,39 2,28 2,97 0,91 1,17 0,71 1,22 12,7 12 DEG 48 DEG ALL DIMENSIONS ARE IN M.M. Pin Configuration Available'in TO-72 CDIL Code


    OCR Scan     		O-72-1 O-72-2 BF115 BF167 O-72-' BF173 BF180 BF181 BF182 2N918 pin configuration 2SC2570 2N3933 2N5179 2N917 PDF

    2sc2570

    Abstract: BF200 transistor BF173 BF167 BF184 2N918 pin configuration BF115 2SC568 BF185 BF180
    Text: TO-72 — A — J— B — DIM A B C D E F G H J K L f o 1 UJ IL X D MIN MAX 5,24 5,84 4,52 4,95 4,31 5,33 0,40 0,53 0,76 1,14 • 1,39 2,28 2,97 0,91 1,17 0,71 1,22 12,7 12 DEG 48 DEG ALL DIMENSIONS ARE IN M.M. Pin Configuration Available'in TO-72 CDIL Code


    OCR Scan     		O-72-1 O-72-2 BF115 BF167 O-72-' BF173 BF180 BF181 BF182 O-72-1 2sc2570 BF200 transistor BF184 2N918 pin configuration 2SC568 BF185 PDF

    BF180

    Abstract: BF115 BF167 BF184 2N918 pin configuration BF181 BF185 TO-72 TO72 2N3933
    Text: DIM A B C D E F G H MIN 5,24 4,52 4,31 0,40 1,14 2,28 . 0,91 MAX 5,84 4,95 5,33 0,53 0,76 1,39 2,97 1,17 J K L 0,71 12,7 12 DEG - 1,22 48 DEG ALL DIMENSIONS ARE IN M.M. Pin Configuration Available in TO-72 CDIL Code Style PIN 1 TO-72 PIN 2 PIN 3 PIN 4 Emitter


    OCR Scan     		O-72-1 O-72-2 BF167 O-72-1 BF173 BF180 BF181 BF182. BF184 BF115 2N918 pin configuration BF185 TO-72 TO72 2N3933 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO-72 DIM D A MIN 5,24 5,84 MAX B 4,52 4,95 C D 4,31 0,40 5,33 0,53 E F - 1,14 0,76 1,39 G 2,28 . 2,97 H 0,91 1,17 J K 0,71 12,7 1,22 - L 12 DEG 48 DEG ALL DIMENSIONS ARE IN M.M. Pin Configuration Available in TO-72 CDIL Code Stylo PIN 1 TO-72 PIN 2 PIN 3


    OCR Scan     		O-72-1 O-72-2 BF184 BF185 BF200 CSC568 CSC2570 PDF

    2SC2570

    Abstract: BF184 BF180 2N918 pin configuration BF167 TO-72 to72 BF115 BF181 2SC568
    Text: 1 f a i DIM A B C D E F G H J K L MIN 5,24 4,52 4,31 0,40 1,14 2,28 0,91 0,71 12,7 12DEG MAX 5,84 4,95 5,33 0,53 0,76 1,39 2,97 1,17 1,22 48DEG ALL DIMENSIONS ARE IN M.M. Pin Configuration Available' in TO-72 CDIL Code Style PIN 1 TO-72 PIN 2 PIN 3 PIN 4 Emitter


    OCR Scan     		O-72-1 O-72-2 2SC2570 O-72-1 2SC568 BF115 BF167 O-72-' BF173 BF180 BF184 2N918 pin configuration TO-72 to72 BF181 PDF

    SOT-23 X1

    Abstract: BC1088 BFR63 BFR94 BCX66 BFQ18 BFT26 bd135 BD139 heat sink BFT92
    Text: Microminiature devices transistors primarily intended for hybrid, thin and thick film circuits _ w Type No. = £ g 3 J I VCB0 | « Maximum Ratings Vceo IC|*V T. O a ! I V I Im A I IV I book 1 parts 1 and 2 hf t Ptg min. at 25 C <°C) Im W I


    OCR Scan     		BCW31R BCW32R BCW33R OT-23 BC108A BC108B BC108C BCW71R BCW72R SOT-23 X1 BC1088 BFR63 BFR94 BCX66 BFQ18 BFT26 bd135 BD139 heat sink BFT92 PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF