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    BF909 Search Results

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    BF909 Price and Stock

    NXP Semiconductors BF909,215

    RF MOSFET 5V SOT143B
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    NXP Semiconductors BF909,235

    RF MOSFET 5V SOT143B
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    NXP Semiconductors BF909R,235

    RF MOSFET 5V SOT143R
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    NXP Semiconductors BF909R,215

    RF MOSFET 5V SOT143R
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    NXP Semiconductors BF909A,215

    RF MOSFET SOT143B
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    Rochester Electronics BF909A,215 374 1
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    BF909 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BF909 NXP Semiconductors BF909 - N-channel dual gate MOS-FETs - CIS TYP: 3.6 pF; COS: 2.3 pF; ID: 40 mA; IDSS: 12 to 20 mA; IDSS min.: 2.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS Original PDF
    BF909 Philips Semiconductors N-Channel Dual Gate MOS-FET Original PDF
    BF909 Philips Semiconductors N-channel dual gate MOS-FETs Scan PDF
    BF909,215 NXP Semiconductors N-channel dual gate MOS-FETs - CIS TYP: 3.6 pF; COS: 2.3 pF; ID: 40 mA; IDSS: 12 to 20 mA; IDSS min.: 2.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS; Package: SOT143B (SOT4); Container: Tape reel smd Original PDF
    BF909,235 NXP Semiconductors N-channel dual gate MOS-FETs - CIS TYP: 3.6 pF; COS: 2.3 pF; ID: 40 mA; IDSS: 12 to 20 mA; IDSS min.: 2.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS; Package: SOT143B (SOT4); Container: Tape reel smd Original PDF
    BF909A,215 Philips Semiconductors RF FETs, Discrete Semiconductor Products, MOSFET N-CH SOT-143B Original PDF
    BF909AR,215 Philips Semiconductors RF FETs, Discrete Semiconductor Products, MOSFET N-CH SOT-143R Original PDF
    BF909AWR,115 NXP Semiconductors RF FETs, Discrete Semiconductor Products, MOSFET N-CH 7V 40MA SOT143R Original PDF
    BF909R NXP Semiconductors N-channel dual gate MOS-FETs - CIS TYP: 3.6 pF; COS: 2.3 pF; ID: 40 mA; IDSS: 12 to 20 mA; IDSS min.: 2.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS Original PDF
    BF909R Philips Semiconductors N-Channel Dual Gate MOS-FET Original PDF
    BF909R Philips Semiconductors N-channel dual gate MOS-FETs Scan PDF
    BF909R,215 NXP Semiconductors N-channel dual gate MOS-FETs - CIS TYP: 3.6 pF; COS: 2.3 pF; ID: 40 mA; IDSS: 12 to 20 mA; IDSS min.: 2.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS; Package: SOT143R (SC-61B); Container: Tape reel smd Original PDF
    BF909R,235 NXP Semiconductors N-channel dual gate MOS-FETs - CIS TYP: 3.6 pF; COS: 2.3 pF; ID: 40 mA; IDSS: 12 to 20 mA; IDSS min.: 2.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS; Package: SOT143R (SC-61B); Container: Tape reel smd Original PDF
    BF909T/R NXP Semiconductors N-channel dual gate MOS-FETs - CIS TYP: 3.6 pF; COS: 2.3 pF; ID: 40 mA; IDSS: 12 to 20 mA; IDSS min.: 2.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS Original PDF
    BF909TR Philips Semiconductors N-channel dual gate MOS-FET Original PDF
    BF909WR NXP Semiconductors BF909WR - N-channel dual-gate MOS-FET - CIS TYP: 3.6 pF; COS: 2.3 pF; ID: 40 mA; IDSS: 12 to 20 mA; IDSS min.: 2.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS Original PDF
    BF909WR Philips Semiconductors N-Channel Dual-Gate MOS-FET Original PDF
    BF909WR,115 NXP Semiconductors N-channel dual-gate MOS-FET - CIS TYP: 3.6 pF; COS: 2.3 pF; ID: 40 mA; IDSS: 12 to 20 mA; IDSS min.: 2.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd Original PDF
    BF909WR,115 NXP Semiconductors BF909 - TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC, SMD, CMPAK-4, FET RF Small Signal Original PDF
    BF909WR,135 NXP Semiconductors N-channel dual-gate MOS-FET - CIS TYP: 3.6 pF; COS: 2.3 pF; ID: 40 mA; IDSS: 12 to 20 mA; IDSS min.: 2.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd Original PDF

    BF909 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: BF909; BF909R N-channel dual gate MOS-FETs Rev. 02 — 19 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact


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    BF909; BF909R PDF

    marking M29

    Abstract: K 3053 TRANSISTOR TRANSISTOR m29 marking 550 sot143 BF909 BF909R n-channel dual gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF909; BF909R N-channel dual gate MOS-FETs Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 25 Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R


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    BF909; BF909R marking M29 K 3053 TRANSISTOR TRANSISTOR m29 marking 550 sot143 BF909 BF909R n-channel dual gate PDF

    "MARKING CODE M3"

    Abstract: BF909 BF909R K 3053 TRANSISTOR
    Text: BF909; BF909R N-channel dual gate MOS-FETs Rev. 02 — 19 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact


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    BF909; BF909R "MARKING CODE M3" BF909 BF909R K 3053 TRANSISTOR PDF

    BF909WR

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BF909WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1997 Sep 05 2010 Sep 15 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR FEATURES PINNING • Specially designed for use at 5 V supply voltage


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    BF909WR R77/03/pp13 BF909WR PDF

    K 3053 TRANSISTOR

    Abstract: BF909R BF909 marking M29 mosfet marking code gg transistor marking G1 PHILIPS FW 36 20 MLB944
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF909; BF909R N-channel dual gate MOS-FETs Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 25 Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R


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    BF909; BF909R OT143. OT143R. MBC845 K 3053 TRANSISTOR BF909R BF909 marking M29 mosfet marking code gg transistor marking G1 PHILIPS FW 36 20 MLB944 PDF

    mosfet handbook

    Abstract: K 3053 TRANSISTOR MAM192 BF909WR Dual-Gate Mosfet dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF909WR N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 25 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR FEATURES


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    BF909WR mosfet handbook K 3053 TRANSISTOR MAM192 BF909WR Dual-Gate Mosfet dual-gate PDF

    mosfet mar 709

    Abstract: MARKING CODE m33 transistor MAR 819 UHF Dual Gate BF909AR transistor MAR 825 bf909a 970310 marking CODE GG G1 TRANSISTOR
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF909A; BF909AR Dual-gate MOS-FETs Preliminary specification File under Discrete Semiconductors, SC07 1998 Mar 06 Philips Semiconductors Preliminary specification Dual-gate MOS-FETs BF909A; BF909AR FEATURES • Specially designed for use at 5 V supply voltage


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    BF909A; BF909AR SCA57 115102/00/01/pp16 mosfet mar 709 MARKING CODE m33 transistor MAR 819 UHF Dual Gate BF909AR transistor MAR 825 bf909a 970310 marking CODE GG G1 TRANSISTOR PDF

    fet MARKING g2

    Abstract: BF909WR dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF909WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1997 Sep 05 2010 Sep 15 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR FEATURES PINNING • Specially designed for use at 5 V supply voltage


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    BF909WR R77/03/pp13 fet MARKING g2 BF909WR dual-gate PDF

    mosfet K 2865

    Abstract: 4814 mosfet BF909WR dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF909WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1995 Apr 25 File under Discrete Semiconductors, SC07 1997 Sep 05 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR


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    BF909WR SCA55 117067/00/02/pp12 mosfet K 2865 4814 mosfet BF909WR dual-gate PDF

    MRF581

    Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
    Text: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ


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    Motorola transistor smd marking codes

    Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
    Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.


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    PDF

    LPC2148 i2c

    Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
    Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.


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    OT363 SC-88) LPC2148 i2c BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent PDF

    digital TUNING FM RADIO RECEIVER

    Abstract: Varicap bb112 OQ8844T varicap bb130 RADIO fm RECEIVER IC UHF TDA1515 FM Receiver Circuits TEA5591A TDA7000 philips ic fm am stereo receiver TDA1013
    Text: INTEGRATED CIRCUITS DATA SHEET Index Functional index 1996 Nov 06 File under Integrated Circuits, IC01 Philips Semiconductors Functional index Index RADIO RECEIVERS AM receivers TDA1072A AM receiver circuit; for car radios TDA1072AT AM receiver circuit; for car radios


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    TDA1072A TDA1072AT TDA1572 TDA1572T TEA5551T TEA6200 TEA5570 TEA5591 TEA5591A TEA5594 digital TUNING FM RADIO RECEIVER Varicap bb112 OQ8844T varicap bb130 RADIO fm RECEIVER IC UHF TDA1515 FM Receiver Circuits TEA5591A TDA7000 philips ic fm am stereo receiver TDA1013 PDF

    an10133

    Abstract: capacitor 100nf 16v x7r 10 1005 murata TEA5767/68 Garage Door Opener remote circuit diagrams philips rf manual balanced modulator ic 1496 2.4GHz Cordless Phone circuit diagram A case 10uf (10v) ±20% Chip Tantal TEA5767 working principle scanner block diagram
    Text: Philips RF Manual product & design manual for RF small signal discretes 3rd edition July 2003 APPENDIX / documentation/rf_manual Document number: 4322 252 06385 Date of release: July 2003


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    BB202, BF1107/8 BGA6589 BGA6589. BGA6589 an10133 capacitor 100nf 16v x7r 10 1005 murata TEA5767/68 Garage Door Opener remote circuit diagrams philips rf manual balanced modulator ic 1496 2.4GHz Cordless Phone circuit diagram A case 10uf (10v) ±20% Chip Tantal TEA5767 working principle scanner block diagram PDF

    uaf4000

    Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
    Text: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャー はじめに


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    20GHz uaf4000 toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR PDF

    BF1201A

    Abstract: bf1211 dual gate mosfet bfq34 application note SA636 BFG480W BF862 AM LNA BFR10 SA676 Reliability SA612A SA614A
    Text: RF Products RF Products 241 RF Access Systems CATV RF Hybrid Amplifiers Type Number Description Frequency Range Gain dB Slope (dB) FL S11/S22 CTB XMOD CSO @Ch @Vo (dBmV) F @fmax Itot (mA) BGS67A 65 MHz, 25.5 dB gain Reverse Amplifier, 12 V 5 - 65 25 - 26


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    S11/S22 BGS67A BGY68 BGY66B BGY67 13MHz 900MHz SA8027 TSSOP20) 44MHz BF1201A bf1211 dual gate mosfet bfq34 application note SA636 BFG480W BF862 AM LNA BFR10 SA676 Reliability SA612A SA614A PDF

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


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    OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes PDF

    tcxo philips 4322

    Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
    Text: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The


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    TRANSISTOR m29

    Abstract: MAM124 K 3053 TRANSISTOR
    Text: Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.


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    BF909; BF909R OT143R. TRANSISTOR m29 MAM124 K 3053 TRANSISTOR PDF

    BF909AWR

    Abstract: 302B ha3020 dual-gate k 3531 transistor transistor 1G1
    Text: Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909AWR FEATURES PINNING • Specially designed for use at 5 V supply voltage • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz


    OCR Scan
    BF909AWR OT343R OT343R 302B ha3020 dual-gate k 3531 transistor transistor 1G1 PDF

    K 3053 TRANSISTOR

    Abstract: TRANSISTOR m29 BF909 marking code dual gate mos BF909R marking 550 sot143 marking M29 PRs transistor BF909,235
    Text: Philips Semiconductors Product specification N-ohannel dual gate MOS-FETs FEATURES • Specially designed for use at 5 V supply voltage BF909; BF909R transistor consists of an amplifier M O S-FET with source and substrate interconnected and an internal bias circuit to


    OCR Scan
    BF909; BF909R MBC845 OT143R. K 3053 TRANSISTOR TRANSISTOR m29 BF909 marking code dual gate mos BF909R marking 550 sot143 marking M29 PRs transistor BF909,235 PDF

    BF991

    Abstract: BF545 BFT46 PMBFJ310 PMBFJ177 PMBFJ211 BF908R BF98 PMBFJ111 PMBFJ174
    Text: Philips Semiconductors Small-signal Field-effect Transistors Index Types added to the range since the last issue of Handbook SC07 1996 issue are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE 2N5484 80 BF909R 165 J174 288 2N5485


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    2N5484 2N5485 2N5486 BF245A BF245B BF245C BF410A BF410B BF410C BF410D BF991 BF545 BFT46 PMBFJ310 PMBFJ177 PMBFJ211 BF908R BF98 PMBFJ111 PMBFJ174 PDF

    MARKING CODE m33

    Abstract: BF909AR BF909A transistor m33 dual-gate
    Text: Philips Semiconductors Product specification BF909A; BF909AR Dual-gate MOS-FETs FEATURES • Specially designed for use at 5 V supply voltage • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio


    OCR Scan
    BF909A; BF909AR OT143B OT143R OT143B OT143R MARKING CODE m33 BF909A transistor m33 dual-gate PDF

    sot23 marking M6p

    Abstract: PMBFJ111 PMBFJ174
    Text: Philips Semiconductors Marking codes Small-signal Field-effect Transistors Types in SOT23, SOT89, SOT143 and SOT343 envelopes are marked with a code as listed in the following tables. TYPE NUM BER M A R K IN G CODE M A R K IN G TYPE NUMBER CODE TYPE NUM BER


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    OT143 OT343 BF510 BF994S BST120 BF511 BF996S BST122 BF512 BF997 sot23 marking M6p PMBFJ111 PMBFJ174 PDF