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    BF909; Price and Stock

    NXP Semiconductors BF909,235

    RF MOSFET 5V SOT143B
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    DigiKey BF909,235 Reel 10,000
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    NXP Semiconductors BF909,215

    RF MOSFET 5V SOT143B
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    DigiKey BF909,215 Reel 3,000
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    NXP Semiconductors BF909A,215

    RF MOSFET SOT143B
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    DigiKey BF909A,215 Reel 3,000
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    Rochester Electronics BF909A,215 374 1
    • 1 $0.1842
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    NXP Semiconductors BF909R,235

    RF MOSFET 5V SOT143R
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    NXP Semiconductors BF909R,215

    RF MOSFET 5V SOT143R
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    DigiKey BF909R,215 Reel 3,000
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    Rochester Electronics BF909R,215 228 1
    • 1 $0.195
    • 10 $0.195
    • 100 $0.1833
    • 1000 $0.1658
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    BF909; Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BF909 NXP Semiconductors BF909 - N-channel dual gate MOS-FETs - CIS TYP: 3.6 pF; COS: 2.3 pF; ID: 40 mA; IDSS: 12 to 20 mA; IDSS min.: 2.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS Original PDF
    BF909 Philips Semiconductors N-Channel Dual Gate MOS-FET Original PDF
    BF909 Philips Semiconductors N-channel dual gate MOS-FETs Scan PDF
    BF909,215 NXP Semiconductors N-channel dual gate MOS-FETs - CIS TYP: 3.6 pF; COS: 2.3 pF; ID: 40 mA; IDSS: 12 to 20 mA; IDSS min.: 2.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS; Package: SOT143B (SOT4); Container: Tape reel smd Original PDF
    BF909,235 NXP Semiconductors N-channel dual gate MOS-FETs - CIS TYP: 3.6 pF; COS: 2.3 pF; ID: 40 mA; IDSS: 12 to 20 mA; IDSS min.: 2.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS; Package: SOT143B (SOT4); Container: Tape reel smd Original PDF
    BF909A,215 Philips Semiconductors RF FETs, Discrete Semiconductor Products, MOSFET N-CH SOT-143B Original PDF
    BF909AR,215 Philips Semiconductors RF FETs, Discrete Semiconductor Products, MOSFET N-CH SOT-143R Original PDF
    BF909AWR,115 NXP Semiconductors RF FETs, Discrete Semiconductor Products, MOSFET N-CH 7V 40MA SOT143R Original PDF
    BF909R NXP Semiconductors N-channel dual gate MOS-FETs - CIS TYP: 3.6 pF; COS: 2.3 pF; ID: 40 mA; IDSS: 12 to 20 mA; IDSS min.: 2.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS Original PDF
    BF909R Philips Semiconductors N-Channel Dual Gate MOS-FET Original PDF
    BF909R Philips Semiconductors N-channel dual gate MOS-FETs Scan PDF
    BF909R,215 NXP Semiconductors N-channel dual gate MOS-FETs - CIS TYP: 3.6 pF; COS: 2.3 pF; ID: 40 mA; IDSS: 12 to 20 mA; IDSS min.: 2.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS; Package: SOT143R (SC-61B); Container: Tape reel smd Original PDF
    BF909R,235 NXP Semiconductors N-channel dual gate MOS-FETs - CIS TYP: 3.6 pF; COS: 2.3 pF; ID: 40 mA; IDSS: 12 to 20 mA; IDSS min.: 2.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS; Package: SOT143R (SC-61B); Container: Tape reel smd Original PDF
    BF909T/R NXP Semiconductors N-channel dual gate MOS-FETs - CIS TYP: 3.6 pF; COS: 2.3 pF; ID: 40 mA; IDSS: 12 to 20 mA; IDSS min.: 2.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS Original PDF
    BF909TR Philips Semiconductors N-channel dual gate MOS-FET Original PDF
    BF909WR NXP Semiconductors BF909WR - N-channel dual-gate MOS-FET - CIS TYP: 3.6 pF; COS: 2.3 pF; ID: 40 mA; IDSS: 12 to 20 mA; IDSS min.: 2.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS Original PDF
    BF909WR Philips Semiconductors N-Channel Dual-Gate MOS-FET Original PDF
    BF909WR,115 NXP Semiconductors N-channel dual-gate MOS-FET - CIS TYP: 3.6 pF; COS: 2.3 pF; ID: 40 mA; IDSS: 12 to 20 mA; IDSS min.: 2.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd Original PDF
    BF909WR,115 NXP Semiconductors BF909 - TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC, SMD, CMPAK-4, FET RF Small Signal Original PDF
    BF909WR,135 NXP Semiconductors N-channel dual-gate MOS-FET - CIS TYP: 3.6 pF; COS: 2.3 pF; ID: 40 mA; IDSS: 12 to 20 mA; IDSS min.: 2.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd Original PDF