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    BFG410W Search Results

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    BFG410W Price and Stock

    NXP Semiconductors BFG410W,135

    RF TRANS NPN 4.5V 22GHZ CMPAK-4
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    NXP Semiconductors BFG410W,115

    RF TRANS NPN 4.5V 22GHZ CMPAK-4
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    Verical BFG410W,115 3,850 75
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    Philips Semiconductors BFG410W

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics BFG410W 1,510 7
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    Quest Components BFG410W 49,643
    • 1 $0.162
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    BFG410W 1,623
    • 1 $0.54
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    BFG410W 1,208
    • 1 $1
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    Vishay Dale BFG410W

    TRANSISTOR,BJT,NPN,4.5V V(BR)CEO,12MA I(C),SOT-343R
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    Quest Components BFG410W 2,964
    • 1 $0.162
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    BFG410W Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFG410W NXP Semiconductors CDMA CELLULAR VCO WITH THE BFG425W, BFG410W AND VARACTOR BB142 Original PDF
    BFG410W NXP Semiconductors BFG410W - NPN 22 GHz wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; @ IC: 10 mA; fT: 22 GHz; Frequency: 1.2 MHz; Gain @ 1.9 GHz: 29 dB; Gain @ 900 Mhz: 21 dB; IC: 12 mA; ITO: 15 dBm; Noise figure: [email protected]@f1 dB; PL: 5 W; Ptot: Original PDF
    BFG410W Philips Semiconductors NPN 22 GHz wideband transistor Original PDF
    BFG410W,115 NXP Semiconductors BFG410 - TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, CMPAK-4, BIP RF Small Signal Original PDF
    BFG410W,115 NXP Semiconductors NPN 22 GHz wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; @ IC: 10 mA; fT: 22 GHz; Frequency: 1.2 MHz; Gain @ 1.9 GHz: 29 dB; Gain @ 900 Mhz: 21 dB; IC: 12 mA; ITO: 15 dBm; Noise figure: [email protected]@f1 dB; PL: 5 W; Ptot:; Package: SOT343R (CMPAK-4); Container: Tape reel smd Original PDF
    BFG410W,135 NXP Semiconductors BFG410W - NPN 22 GHz wideband transistor, SOT343R Package, Standard Marking, Reel Pack, SMD, Large Original PDF
    BFG410W,135 NXP Semiconductors NPN 22 GHz wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; @ IC: 10 mA; fT: 22 GHz; Frequency: 1.2 MHz; Gain @ 1.9 GHz: 29 dB; Gain @ 900 Mhz: 21 dB; IC: 12 mA; ITO: 15 dBm; Noise figure: [email protected]@f1 dB; PL: 5 W; Ptot:; Package: SOT343R (CMPAK-4); Container: Tape reel smd Original PDF
    BFG410WT/R NXP Semiconductors TRANS GP BJT NPN 4.5V 0.012A 4S Original PDF
    BFG410WTR Philips Semiconductors NPN 22 GHz wideband transistor Original PDF

    BFG410W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-375 : T. Buss : 20 May 1997 : P.G. Transistors & Diodes, Development 2GHz BUFFER-AMPLIFIER WITH THE BFG410W Abstract: This application note contains an example of a Buffer-Amplifier with the new BFG410W Double Poly RFtransistor. The buffer is designed for a frequency f=2GHz. Performance at f=2GHz: Isolation S12~-31dB,


    Original     		PDF RNR-T45-97-B-375 BFG410W BFG410W -31dB,

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFG410W NPN 22 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 1998 Mar 11 NXP Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W FEATURES PINNING • Very high power gain PIN


    Original     		PDF BFG410W R77/04/pp13

    BB142

    Abstract: 43p transistor BFG425W 1K 1608 2K 0402 BFG410W TRANSISTOR noise figure measurements tdk VCO BFG425W APPLICATION 0402_PHILIPS
    Text: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-45-98-B-0827 : Haris Duric & Robert Cloudt : 16 December 1998 : DSC-N, Development CDMA CELLULAR VCO WITH THE BFG425W, BFG410W AND VARACTOR BB142


    Original     		PDF RNR-45-98-B-0827 BFG425W, BFG410W BB142 BFG425W BFG410W BB142 IS-95 15KHz) 30KHz) 43p transistor 1K 1608 2K 0402 TRANSISTOR noise figure measurements tdk VCO BFG425W APPLICATION 0402_PHILIPS

    BFG410W

    Abstract: MARKING CODE P4
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG410W NPN 22 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 1998 Mar 11 NXP Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W FEATURES PINNING • Very high power gain


    Original     		PDF BFG410W R77/04/pp13 BFG410W MARKING CODE P4

    b 772 p

    Abstract: CMP265 CMP460 BFG410W CMP230 CMP231 CMP287 CMP452 CMP453 CMP485
    Text: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0789 : T. Buss th : 30 of September 97 : P.G. Transistors & Diodes, Development 2GHz LOW NOISE AMPLIFIER WITH THE BFG410W update of report RNR-T45-96-B-772


    Original     		PDF RNR-T45-97-B-0789 BFG410W RNR-T45-96-B-772 BFG410W CMP250 CMP469 CMP180 CMP426 s10mil b 772 p CMP265 CMP460 CMP230 CMP231 CMP287 CMP452 CMP453 CMP485

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BFG410W NPN 22 GHz wideband transistor Product specification Supersedes data of 1997 Apr 16 File under Discrete Semiconductors, SC14 1997 Oct 29 Philips Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W FEATURES


    Original     		PDF BFG410W SCA55 127127/00/03/pp12

    BFG410W

    Abstract: Buffer Amplifier Ghz BFG400 BP317 application notes philips rf philips printed circuit board design
    Text: APPLICATION INFORMATION 2 GHz buffer amplifier with the BFG410W Philips Semiconductors Application information 2 GHz buffer amplifier with the BFG410W ABSTRACT • Description of the product The BFG410W, one of the Philips double polysilicon wideband transistors of the BFG400 series.


    Original     		PDF BFG410W BFG410W, BFG400 603508/01/pp8 BFG410W Buffer Amplifier Ghz BP317 application notes philips rf philips printed circuit board design

    L05 SMD

    Abstract: w05 smd transistor SMD W05 W05 transistor W05 SMD L6 PHILIPS CMP401 CMP281 CMP263 CMP286
    Text: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-96-B-770 : T. Buss : 20-Jan-00 : P.G. Transistors & Diodes, Development 900MHz LOW NOISE AMPLIFIER WITH THE BFG410W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG410W Double Poly


    Original     		PDF RNR-T45-96-B-770 20-Jan-00 900MHz BFG410W BFG410W 900MHz. 900MHz CMP180 CMP210 L05 SMD w05 smd transistor SMD W05 W05 transistor W05 SMD L6 PHILIPS CMP401 CMP281 CMP263 CMP286

    "MARKING CODE P4"

    Abstract: BFG410W RF NPN POWER TRANSISTOR 3 GHZ CA 5668
    Text: DISCRETE SEMICONDUCTORS BFG410W NPN 22 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 1998 Mar 11 Philips Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W FEATURES


    Original     		PDF BFG410W SCA57 125104/00/04/pp12 "MARKING CODE P4" BFG410W RF NPN POWER TRANSISTOR 3 GHZ CA 5668

    MRF581

    Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
    Text: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ


    Original     		PDF

    Motorola transistor smd marking codes

    Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
    Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.


    Original     		PDF

    LPC2148 i2c

    Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
    Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.


    Original     		PDF OT363 SC-88) LPC2148 i2c BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent

    BFG425

    Abstract: BFG425W BFG410W TRANSISTOR noise figure measurements 2 GHz LNA RNR-T45-96-B-773
    Text: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-96-B-773 : T. Buss : 14-Nov-1996 : P.G. Transistors & Diodes, Development 2GHz LOW NOISE AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG425W Double Poly


    Original     		PDF RNR-T45-96-B-773 14-Nov-1996 BFG425W BFG425W BFG400W 100KHz BFG425 BFG410W TRANSISTOR noise figure measurements 2 GHz LNA RNR-T45-96-B-773

    F9 SOT23

    Abstract: BFG425W IC vco 900 1800 mhz BGA2022 2.45 Ghz power amplifier sot343r BFG480W BFG410W PBR951 PMBTH10
    Text: P H I L I P S R F W I D E B A N D T R A N S I S TO R S A N D M M I C S F O R W I R E L E S S Preferred types recommended for new design. Fo r a c o m p l e t e ove r v i ew o f o u r p o r t f o l i o s e e o u r w e b s i t e w w w. s e m i c o n d u c t o r s . p h i l i p s . c o m / p ro d u c t s / r f /


    Original     		PDF PMBTH10 PMBTH81 BFS17W BFR92AT BFT92W BFR93AT PBR941 PBR951 PRF947 PRF949 F9 SOT23 BFG425W IC vco 900 1800 mhz BGA2022 2.45 Ghz power amplifier sot343r BFG480W BFG410W PBR951 PMBTH10

    uaf4000

    Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
    Text: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャー はじめに


    Original     		PDF 20GHz uaf4000 toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR

    BF1201A

    Abstract: bf1211 dual gate mosfet bfq34 application note SA636 BFG480W BF862 AM LNA BFR10 SA676 Reliability SA612A SA614A
    Text: RF Products RF Products 241 RF Access Systems CATV RF Hybrid Amplifiers Type Number Description Frequency Range Gain dB Slope (dB) FL S11/S22 CTB XMOD CSO @Ch @Vo (dBmV) F @fmax Itot (mA) BGS67A 65 MHz, 25.5 dB gain Reverse Amplifier, 12 V 5 - 65 25 - 26


    Original     		PDF S11/S22 BGS67A BGY68 BGY66B BGY67 13MHz 900MHz SA8027 TSSOP20) 44MHz BF1201A bf1211 dual gate mosfet bfq34 application note SA636 BFG480W BF862 AM LNA BFR10 SA676 Reliability SA612A SA614A

    tcxo philips 4322

    Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
    Text: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The


    Original     		PDF

    BFG591 amplifier

    Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
    Text: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN BFG591 amplifier 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    RF1119

    Abstract: TZA3036 lnb ku UAA 1006 BF862 AM LNA BFG480W ic lnb 2SK163-L TFF1003 TFF1003HN
    Text: RF᠟‫ݠ‬㄀11⠜ RFѻકⱘᑨ⫼੠䆒䅵᠟‫ݠ‬ 2008ᑈ9᳜ www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,


    Original     		PDF PMBFJ177 PMBFJ308 PMBFJ309 PMBFJ310 PMBFJ620 PRF947 PRF949 PRF957 TFF1000HN TFF1003HN RF1119 TZA3036 lnb ku UAA 1006 BF862 AM LNA BFG480W ic lnb 2SK163-L TFF1003 TFF1003HN

    transistor marking 2d ghz

    Abstract: BFG41OW
    Text: DISC RETE S E M IC O N D U C TO R S BFG410W NPN 22 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Mar 11 PHILIPS PHILIPS Philips S e m ico nd uctors P ro d u c t specification


    OCR Scan     		PDF BFG410W 125104/00/04/pp12 transistor marking 2d ghz BFG41OW

    2N2222A-PL

    Abstract: 2sc3883 2sc9018 BF759 2N3055-DIV SS8050 smd 2S-C3883 2SC945 smd smd 2n3055 bu415a
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 T p a H 3 M CTopbi N P N c o p T M p o B K a n o H a n p flw e H M r o Kofl: BFP520 BFG410W BFP405 BFP420 BFP450 BFP540 2SC5088 BFG235 BFR91A BF763 BFG540W BFG94 BFR90A BFR91 BFR92A BFR93A


    OCR Scan     		PDF BFP520 OT343R BFG410W BFP405 BFP420 BFP450 2N2222A-PL 2sc3883 2sc9018 BF759 2N3055-DIV SS8050 smd 2S-C3883 2SC945 smd smd 2n3055 bu415a

    transistor 20107

    Abstract: transistor dk 50 PCD5042 bfg520w vco application note BFG591 Application Notes DK 51* transistor bfg520 antenna preamplifier BP547 bfg135 application note MPSH10 small amplifier
    Text: TARGET SYSTEMS PRODUCTS Function Type Description Cellular N AMPS /{E> TACS IS-54/-136 TDMA IS—95 CDMA Cordless GSM DCS1800 PCS PDC RF Amplifiers { SA5200 CTO CT1 SS X X Wireless Data DECT PHS 802.11 CDPD X X Gain block-1 GHZ PAGERS RF Front End SA611 1 GHz low voli LNA and mixer


    OCR Scan     		PDF SA5200 SA611 SA2420 SA621 SA1620 SA1921 UAA2073 UAA2077AM UAA2077BM UAA2077CM transistor 20107 transistor dk 50 PCD5042 bfg520w vco application note BFG591 Application Notes DK 51* transistor bfg520 antenna preamplifier BP547 bfg135 application note MPSH10 small amplifier

    SOT23 W1P

    Abstract: BFG540 N43 SOT89 MARKING CODE "W1P" MARKING W1P sot143 Marking code p1 PSH10 sot143 sot343 marking code V3 w1p code
    Text: Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 SOT23 BF547W BF689K SOT323 SOT54 BF747 SOT23 SOT54 BF763 BFC505 BFC520 BFE505 BFE520 BFG10 BFG10/X BFG10W/X BFG11 BFG11/X BFG11W/X


    OCR Scan     		PDF BF547 BF547W BF689K BF747 BF763 BFC505 BFC520 BFE505 BFE520 BFG10 SOT23 W1P BFG540 N43 SOT89 MARKING CODE "W1P" MARKING W1P sot143 Marking code p1 PSH10 sot143 sot343 marking code V3 w1p code