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NXP Semiconductors BFQ32M PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4500 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;
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BFQ32M Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BFQ32M		Philips Semiconductors	PNP 4 GHz Wideband Transistor		Original	PDF

BFQ32M Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BEL187 Abstract: NA22XX BC262A LOW-POWER SILICON PNP 2SA523 NA22XH Text: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO -5 -10 -15 20 Sanyo Elect Sanyo Elect NthAmerSemi CrimsonSemi CentralSemi NthAmerSemi V/O Electro Sanyo Elect Sanyo Elect Sanvo Elect ~~:~~~8U ~anyo ~Iect BEl187 2N3576 2N5455 2N5056 ST5771-1 ST5771-2	Original	2SB1296 2SB1295 BFX12 BFX13 KT361 2SB1118S 2SB808 2SB1118E BEL187 NA22XX BC262A LOW-POWER SILICON PNP 2SA523 NA22XH	PDF
BFQ32M Abstract: BFQ63 UHF pnp transistor Text: bbSB'lBl O G B I S m Philips Semiconductors ô3H M A P X Product specification PNP 4 GHz wideband transistor BFQ32M ^ Af1ER PHILIPS/DISCRETE DESCRIPTION PINNING PNP transistor in a TO-72 metal envelope with insulated electrodes and a shield lead connected to the	OCR Scan	QD31Sm BFQ32M BFQ63. bbS3T31 0D31543 BFQ32M UB834S MBB347 BFQ63 UHF pnp transistor	PDF
BFQ32M Abstract: transistor D 587 BFQ63 GHz PNP transistor Text: Product specification Philips Sem iconductors PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL ' / 5 bE D • 711062b BFQ32M □□•4 S 4 3 Q 3 3 T ■ P H IN PINNING DESCRIPTION PNP transistor In a TO-72 metal envelope with insulated electrodes and a shield lead connected to the	OCR Scan	BFQ32M 711062b 0DHS43Q BFQ63. IS22I 7110flEb 00M5M35 MBB347 BFQ32M transistor D 587 BFQ63 GHz PNP transistor	PDF
BFQ32M Abstract: No abstract text available Text: Philips Semiconductors bbBB'lBl 0031541 fi34 M APX Product specification PNP 4 GHz wideband transistor I BFQ32M . N Af1ER DESCRIPTION philips /discrete ERE PINNING PNP transistor in a TO-72 metal envelope with insulated electrodes and a shield lead connected to the	OCR Scan	BFQ32M BFQ63. 500MHz 0D31SM3 MBB347 BFQ32M	PDF
BFQ32M Abstract: of bfq63 BFQ63 transistor 643 Text: Philips Semiconductors Product specification NPN 5 GHz wideband transistor PHILIPS INTERN A T I O N A L DESCRIPTION BFQ63 SbE D • 711Gô2b G04S4Ô4 SDD ■ PHIN PINNING NPN transistor in a 10-12 metal envelope with insulated electrodes and a shield lead connected to the	OCR Scan	BFQ63 711002b BFQ32M. 7110fl2b 0D454fl7 BFQ32M of bfq63 BFQ63 transistor 643	PDF
Untitled Abstract: No abstract text available Text: H Philips S em iconductors lati53T31 00315T5 TQS H A P X ^Productspecification NPN 5 GHz wideband transistor BFQ63 N AUER PHIL IPS/DISCRETE DESCRIPTION bRE D PINNING NPN transistor in a TO-72 metal envelope with insulated electrodes and a shield lead connected to the	OCR Scan	lati53T31 00315T5 BFQ63 BFQ32M. MEA302 MBB773	PDF
BFQ63 Abstract: BFQ32M of bfq63 Text: Philips Semiconductors bibi.53,:] 3 1 G G B IS T S TGS HAPX Product specification NPN 5 GHz wideband transistor BFQ63 N AMER PHILIPS/DISCRETE DESCRIPTION b'IE D PINNING NPN transistor in a TO-72 métal envelope with insulated electrodes and a shield lead connected to the	OCR Scan	bbS3T31 BFQ63 BFQ32M. D0315T8 BFQ63 ls12l2 BFQ32M of bfq63	PDF
bf0262a Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94 Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A	OCR Scan	1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94	PDF
transistor f6 13003 Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.	OCR Scan	SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350	PDF
BF547A Abstract: transistor bf 175 BFG65 equivalent BF547B BFG25AXD Text: Philips Sem iconductors RF Wideband Transistors The New Generation Contents page PREFACE 3 SELECTION GUIDE 6 S-PARAMETERS 22 SPICE AND PACKAGE PARAMETERS 44 THERMAL CHARACTERISTICS 48 DEVICE DATA in alpha-num eric sequence 54 OUTLINES 442 INDEX 448 DEFINITIONS	OCR Scan	LCD01 BF547A transistor bf 175 BFG65 equivalent BF547B BFG25AXD	PDF
BFT92A Abstract: BFT93A BFG134 bf689 sot37 sot173 BFG34 BFQ52 bfg65 sot143 philips bfw92 Text: 52 RF/Microwave Devices First Generation RF W ideband Transistors fT to 3.5 GHz metal can fr/ lc Curve Polarity (1) (2) N PN NPN (3) (4) (5) NPN NPN NPN (6) (18) NPN NPN TO-39 surface mount plastic TO-72 TQ-92 BFY90 BF689K BF763 BFW30 SOt-37 ceramic SOT-122E	OCR Scan	BFY90 TQ-92 BF689K BF763 SOt-37 BFT24 BFW92 BFW93 OT-122E OT-23 BFT92A BFT93A BFG134 bf689 sot37 sot173 BFG34 BFQ52 bfg65 sot143 philips bfw92	PDF
SOT-173 Abstract: sot173 BFP96 BFQ32C Text: 55 RF/Microwave Devices RF W ideband Transistors cont. Type No. BFG198 BFG505 BFG505/X BFG505/XR BFG520 BFG520/X BFG520/XR BFG540 BFG540/X BFG540/XR BFG541 BFG590 BFG590/X BFG590/XR BFG591 BFG621 BFG741 BFP90A BFP91A BFP96 BFP505 BFP520 BFP540 BFQ17 BFQ18A	OCR Scan	BFG198 BFG505 BFG505/X BFG505/XR BFG520 BFG520/X BFG520/XR BFG540 BFG540/X BFG540/XR SOT-173 sot173 BFP96 BFQ32C	PDF
BFG591 amplifier Abstract: SC08a bfr591 sot173x BB544 sot122 sot172 bfg65 sot143 SIEMENS BFP520 macro-X ceramic Text: Philips Semiconductors Semiconductors for Telecom systems Selection List General For further information, refer to Data Handbook S C 1 4,1993; "RF Wideband Transistors", except otherwise specified. RF wideband transisto rs March 1993 14 Philips Semiconductors	OCR Scan	OT122 OT143 OT223 OT323 BFS17W BFG17A BFG16A BF547W BF747W BFT25 BFG591 amplifier SC08a bfr591 sot173x BB544 sot122 sot172 bfg65 sot143 SIEMENS BFP520 macro-X ceramic	PDF
BGY41 Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.	OCR Scan	LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc	PDF

sot37 Abstract: sot-37 T173 RE SOT Text: Small Signal Leaded Devices W ideband Transistors c o n t. hFE Ratings Type v CEO V v CBO V *c mA TO-39 TO-72 SOT-37 SOT-37 SOT-37 TO-72 25 10 15 15 10 15 40 20 25 25 18 30 150 50 25 25 50 25 SOT-103 SOT-37 SO T-173 TO-72 SOT-37 SO T-173 TO-72 SOT-37 SOT-37	OCR Scan	BFW17A BFW30 BFW92 BFW92A BFW93 BFY90 BFG32 BFQ23 BFQ23C BFQ24 sot37 sot-37 T173 RE SOT	PDF