Transistor BFR 96
Abstract: Transistor BFR 30 bfr 547 Transistor BFR 191 silicon npn planar rf transistor sot 143 SOT-23R BFR 970 ZO 103 Telefunken Electronic BFR92
Text: BFR 92 / BFR 92 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR92 Marking: P1
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BFR92
BFR92R
D-74025
Transistor BFR 96
Transistor BFR 30
bfr 547
Transistor BFR 191
silicon npn planar rf transistor sot 143
SOT-23R
BFR 970
ZO 103
Telefunken Electronic
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MMBT5551LT1G
Abstract: 1N914 MMBT5550 MMBT5550LT1G MMBT5551 MMBT5551LT3G MMBT5550LT1 4rc10
Text: MMBT5550LT1G, MMBT5551LT1G High Voltage Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage
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MMBT5550LT1G,
MMBT5551LT1G
MMBT5550
MMBT5551
MMBT5550LT1/D
MMBT5551LT1G
1N914
MMBT5550
MMBT5550LT1G
MMBT5551
MMBT5551LT3G
MMBT5550LT1
4rc10
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MMBT5551LT1G
Abstract: sot-23 Marking M1F 1N914 MMBT5550 MMBT5550LT1G MMBT5551 MMBT5551LT3G
Text: MMBT5550LT1G, MMBT5551LT1G High Voltage Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage
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MMBT5550LT1G,
MMBT5551LT1G
MMBT5550
MMBT5551
MMBT5550LT1/D
MMBT5551LT1G
sot-23 Marking M1F
1N914
MMBT5550
MMBT5550LT1G
MMBT5551
MMBT5551LT3G
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Untitled
Abstract: No abstract text available
Text: NDF60N360U1, NDD60N360U1 N-Channel Power MOSFET 600 V, 360 mW Features http://onsemi.com • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS TJ = 25°C unless otherwise noted Parameter
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NDF60N360U1,
NDD60N360U1
NDF60N360U1/D
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MMBT5401LT1G
Abstract: 1N914 MMBT5401LT3G
Text: MMBT5401LT1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage
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MMBT5401LT1G
MMBT5401LT1/D
MMBT5401LT1G
1N914
MMBT5401LT3G
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1N914
Abstract: MMBT5401LT1G MMBT5401LT3G
Text: MMBT5401LT1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage
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MMBT5401LT1G
MMBT5401LT1/D
1N914
MMBT5401LT1G
MMBT5401LT3G
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Untitled
Abstract: No abstract text available
Text: MMBT5401WT1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage Rating VCEO −150 Vdc Collector −Base Voltage
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MMBT5401WT1G
MMBT5401W/D
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Untitled
Abstract: No abstract text available
Text: NDD60N360U1 N-Channel Power MOSFET 600 V, 360 mW Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant ABSOLUTE MAXIMUM RATINGS TJ = 25°C unless otherwise noted Parameter Symbol
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NDD60N360U1
NDD60N360U1/D
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MMBT5401LT1G
Abstract: 1N914 MMBT5401LT3G
Text: MMBT5401LT1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage
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MMBT5401LT1G
MMBT5401LT1/D
MMBT5401LT1G
1N914
MMBT5401LT3G
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BFR 965
Abstract: BFR 36.2 Transistor BFR sot 23 transistor 70.2 Q62702-F1315 sot-23 marking code 352 0482 transistor 0166 415 04 1 060 bfr 705
Text: NPN Silicon RF Transistor BFR 182 Preliminary Data ● For low-noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. ● fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-F1315
OT-23
BFR 965
BFR 36.2
Transistor BFR
sot 23 transistor 70.2
Q62702-F1315
sot-23 marking code 352
0482 transistor
0166 415 04 1 060
bfr 705
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4936N
Abstract: mosfet 4936n 92pF NTMFS4936NT1G NTMFS4936NT3G
Text: NTMFS4936N Power MOSFET 30 V, 79 A, Single N−Channel, SO−8 FL Features • Low RDS on , Low Capacitance and Optimized Gate Charge to • Minimize Conduction, Driver and Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
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NTMFS4936N
NTMFS4936N/D
4936N
mosfet 4936n
92pF
NTMFS4936NT1G
NTMFS4936NT3G
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4936N
Abstract: mosfet 4936n NTMFS4936NT1G NTMFS4936NT3G microdot NTMFS4936N
Text: NTMFS4936N Power MOSFET 30 V, 79 A, Single N−Channel, SO−8 FL Features • Low RDS on , Low Capacitance and Optimized Gate Charge to • Minimize Conduction, Driver and Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
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NTMFS4936N
NTMFS4936N/D
4936N
mosfet 4936n
NTMFS4936NT1G
NTMFS4936NT3G
microdot
NTMFS4936N
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BFR 965
Abstract: No abstract text available
Text: NTD6416AN N-Channel Power MOSFET 100 V, 17 A, 81 mW Features Low RDS on High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol
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NTD6416AN
NTD6416AN/D
BFR 965
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BFR91
Abstract: Transistor BFR 90 application transistor BFR91
Text: BFR 91 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR91 Marking Plastic case XTO 50
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BFR91
D-74025
Transistor BFR 90 application
transistor BFR91
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Transistor BFR 96
Abstract: Bfr 910 BFR96T TRANSISTOR BFR 642 telefunken BFR 34 A
Text: BFR 96 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR96T Marking Plastic case XTO 50
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BFR96T
D-74025
Transistor BFR 96
Bfr 910
TRANSISTOR BFR 642
telefunken BFR 34 A
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16ang
Abstract: NTD6416AN 369D NTD6416ANT4G
Text: NTD6416AN N-Channel Power MOSFET 100 V, 17 A, 81 mW Features Low RDS on High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol
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NTD6416AN
NTD6416AN/D
16ang
NTD6416AN
369D
NTD6416ANT4G
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BFR 970
Abstract: BFR96TS Transistor BFR 96 Bfr 910 Transistor BFR 90 application Transistor BFR 559
Text: BFR 96 TS TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR96TS Marking Plastic case XTO 50
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BFR96TS
D-74025
BFR 970
Transistor BFR 96
Bfr 910
Transistor BFR 90 application
Transistor BFR 559
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MMBT5401L
Abstract: No abstract text available
Text: MMBT5401L, SMMBT5401L, NSVMMBT5401L High Voltage Transistor PNP Silicon http://onsemi.com Features • S and NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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MMBT5401L,
SMMBT5401L,
NSVMMBT5401L
MMBT5401LT1/D
MMBT5401L
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4937n
Abstract: NTMFS4937NT1G NTMFS4937NT3G
Text: NTMFS4937N Power MOSFET 30 V, 70 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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NTMFS4937N
NTMFS4937N/D
4937n
NTMFS4937NT1G
NTMFS4937NT3G
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F=1.45dB at 900MHz SOT-23 RFs Q62702-F1314 1= B 2=E o Package BFR 181 II CO ESP: Electrostatic discharge sensitive device, observe handling precaution!
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900MHz
Q62702-F1314
OT-23
BFR181
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ALG circuit breaker
Abstract: RTXP18 rxms1 abb rtxh18 ABB RXMVB2 RXSP14 RXMVB2 rxma1 rxms1 RTXP18 ASEA
Text: 41 » 1 ! M l » » ASEA BROW N BOVERl INFORMATION FHS May 1989 RF 637 375E 1. Type RAICC Breaker Failure Relay BFR Introduction The RQDT 040 plug-in unit is a simple, but very effective and versatile, 3-phase current decting element incor porated in a new BFR-scheme. It can be used with ease in
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • = 7GHz F = 2.1 dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!
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900MHz
OT-323
Q62702-F1490
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bfr96s
Abstract: No abstract text available
Text: SIEMENS BFR 96S NPN Silicon RF Transistor • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 2 GHz at collector currents from 10 mA to 70 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q68000-A5689
bfr96s
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Transistor BFR
Abstract: Transistor BFR 191 Transistor BFR 39 BFR 67
Text: BFR 35AP NPN Silicon RF Transistor • For broadband am plifiers up to 2 GHz and fast non saturated switches at collector currents from 0.5 to 20 mA. C ESD: E lectrostatic discharge sensitive device, observe handling precautions! Type M arking Ordering code
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OT-23
Transistor BFR
Transistor BFR 191
Transistor BFR 39
BFR 67
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