BFW TRANSISTORS Search Results

BFW TRANSISTORS Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

BFW TRANSISTORS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
GL+7837 Abstract: No abstract text available Text: Gl BDE T> • 7121237 QQBD'ib'i 1 H M vi>K¿.3 BFW 16A BFW 17A S C S - T H O M S O N lu í * ® s G S-THOMSON CATV-MATV AMPLIFIERS DESCRIPTION The BFW 16A and BFW 17A are multi-emitter sili con planar epitaxial NPN transistors in Jedec TO-39 metal case, with extremely good intermodulation	OCR Scan	BFW16A BFW17A T-31-23 GL+7837	PDF
BFW16 Abstract: BFW17 BFW 100 transistor BFW 100 bfw 10 transistor BFW transistors BFW16A transistors BFW16A Text: Ç7 SC S -T H O M S O N KUiSTEMllKSS BFW 16A BFW17A S G S-THOMSON C A T V -M A T V A M P L IF IE R S DESCRIPTIO N The BFW 16A and BFW 17A are multi-emitter sili con planar epitaxial NPN transistors in Jedec TO-39 metal case, with extremely good intermodulation	OCR Scan	BFW16A BFW17 BFW16A-BFW17A BFW16 -BFW17A T-31-23 BFW 100 transistor BFW 100 bfw 10 transistor BFW transistors BFW16A transistors BFW16A	PDF
BFW17A Abstract: BFW transistors BFW 100 BFW16A transistors BFW16A bfw16a-bfw17a bfw1 bfw 11 Text: BFW16A BFW17A CATV-MATV AMPLIFIERS DESCRIPTION The BFW 16A and BFW 17A are multi-emitter silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, with extremely good intermodulation properties and high power gain. They are primarily intended for final and driver stages in channel-and	Original	BFW16A BFW17A BFW17A BFW transistors BFW 100 BFW16A transistors BFW16A bfw16a-bfw17a bfw1 bfw 11	PDF
BFW16A Abstract: 16ab BFW17A Text: SGS-THOMSON R!tlD EæilLI(g'iri iD(SS BFW16A BFW17A CATV-MATV AMPLIFIERS D E S C R IP T IO N The BFW 16Aand BFW 17Aare multi-emitter silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, with extremely good intermodulation properties and high power gain. They are primarily	OCR Scan	BFW16A BFW17A 16Aand 17Aare 16ab BFW17A	PDF
GERMANIUM SMALL SIGNAL TRANSISTORS Abstract: AD142 AD143 GERMANIUM SMALL SIGNAL PNP TRANSISTORS 2N4358 AU113 BSX29 sgs-ates transistors sgs-ates germanium transistor pnp Text: S G S -A T E S Sem iconductors Transistors - PNR/Germanium P N P High Voltage Transistors < O< 0.4 0.7 0.7 150 150 240 _ W BFW 43 BFW 44 2N4358 o CD U Code 5 > Max P t o t @ T a m b — 25 C o R E FE R E N C E T A B L E S 150 150 — (m A) Stock No. Outline	OCR Scan	BFW43 19038e BFW44 19039c 2N4358 34787b BSX29 19080a BSX36 19084d GERMANIUM SMALL SIGNAL TRANSISTORS AD142 AD143 GERMANIUM SMALL SIGNAL PNP TRANSISTORS AU113 sgs-ates transistors sgs-ates germanium transistor pnp	PDF
BFW92 Abstract: TRANSISTOR BFW 11 SQP5 2N6621 349 2110 Q62702-F321 Q68000-A4669 QQG4733 6621 transistor bfw 90 Text: BSC D • Û235b05 0004731 7 « S I E G NPN Silicon RF Broadband Transistors T c rc\ t -» - SIEMENS AKTIENÛESELLSCHAF T - H 't r BFW 92 2 N 6621 BFW 9 2 is an epitaxial NPN silicon planar RF transistor in a plastic package similar to TO 119 50 B 3 DIN 41 86 7 ; intended for use as RF amplifier up to the GHz range,	OCR Scan	6535bQ5 2N6621. Q62702-F321 Q68000-A4669 temperatu077 QQG4733 BFW92 BFW92 TRANSISTOR BFW 11 SQP5 2N6621 349 2110 Q68000-A4669 6621 transistor bfw 90	PDF
TRANSISTOR BFW 16 Abstract: BFW92 2N6621 Q62702-F321 Q68000-A4669 QQG4733 siemens 800 169 O TRANSISTOR BFW 11 BFw 92 transistor bfw 90 Text: BSC D • Û235b05 0004731 7 « S I E G i l ' t r BFW 92 2 N 6621 NPN Silicon RF Broadband Transistors 'l c r rw -r * SIEMENS AKTIENÛESELLSCHAF B F W 9 2 is an epitaxial N PN silicon planar RF transistor in a plastic package similar to TO 119 50 B 3 D IN 41867 ; intended for use as RF amplifier up to the G H z range,	OCR Scan	6535bQ5 2N6621. Q62702-F321 Q68000-A4669 QQG4733 BFW92 TRANSISTOR BFW 16 2N6621 siemens 800 169 O TRANSISTOR BFW 11 BFw 92 transistor bfw 90	PDF
BFW92 Abstract: BFW92A Text: 1 ?, BFW 92, B FW 92A W ideband N-P-N bipolar silicon R F transistors 02* t , k . 1.2 i T P in o u ts : 1 -B a se , 2- C o lle c to r, ”4 .Î Q .S T ra n s is to r is d e s ig n e d fo r a p p lic a tio n in s a te llite c o m m u n ic a tio n s y s te m s ,	OCR Scan	BFW92A OT-37. BFW92 -25rnA, 800MHz 600MHz	PDF
Transistor BFR 96 Abstract: BFR 30 transistor Transistor BFR 35 BFT95 bfx19 bsx30 BFR 80 BFW17A BFR10 BFR36 Text: PROFESSIONAL TRANSISTORS continued m u > (s (5) \ œ œ •Q -a o ex. Ll_ z r i o £3. > < e X < o LU U_ .£= BFR10 N PN N PN BFR 11 NPIM B F R 36 BFR 37 N PN BFR 38 PNP BFR 90* NPN N PN BFR 91* B F R 96* N PN BFR9 7 /2N 3866 NPN B F R 98/2N 4427 NPN PNP	OCR Scan	BFR10 BFR36 BFR96* 97/2N Transistor BFR 96 BFR 30 transistor Transistor BFR 35 BFT95 bfx19 bsx30 BFR 80 BFW17A	PDF
bss17 Abstract: BFY 99 Transistor BFR 30 BFR 30 transistor BFR 450 BFY 93 bfx 63 bfw 96 Transistor BFR 96 BFX97 Text: PROFESSIONAL TRANSISTORS continued m u > (s (5) \ œ œ •Q -a o ex. Ll_ z r i o £3. > < e X CO < E o 'i LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 BFR 37 NPN BFR 38 PNP BFR 90* NPN NPN BFR 91* B F R 96* NPN BFR9 7 /2N 3866 NPN B F R 98/2N 4427 NPN	OCR Scan	BFR10 BFR36 BFR96* 97/2N 98/TO-39 BFX97A 15/2N 16/2N 17/2N 18/2N bss17 BFY 99 Transistor BFR 30 BFR 30 transistor BFR 450 BFY 93 bfx 63 bfw 96 Transistor BFR 96 BFX97	PDF
bfw44 Abstract: BFW43 BFW transistors BFw 94 Text: BFW43 BFW44 HIGH VOLTAGE AMPLIFIERS DESCRIPTION The BFW43 and BFW44 are silicon planar epitaxial PNP transistors in Jedec TO-18 BFW43 and Jedec TO-39 (BFW44) metal cases. Both devices are designed for use in amplifiers where high voltage and high gain are necessary. In	Original	BFW43 BFW44 BFW44 BFW43) BFW44) 15otherwise BFW transistors BFw 94	PDF
BFR 450 Abstract: BFW64 tpl 550 BFW17A BFR38 BFW63 BFX19 BFT95H BFR36 BFR96 Text: PROFESSIONAL TRANSISTORS continued ex. (5) (s \ œ •Q o œ -a Ll_ z £3. > 'i < o LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 B FR 37 NPN B FR 38 PNP BFR 90* NPN NPN B FR 91* B F R 96* NPN BF R97/2N 3866 NPN B F R 98/2N 4427 NPN PNP BFR 99 PNP BFT95	OCR Scan	BFR10 BFR36 BFR96* 97/2N 98/BFX BFX18 BFR 450 BFW64 tpl 550 BFW17A BFR38 BFW63 BFX19 BFT95H BFR96	PDF
bfw44 Abstract: BFW43 BFW transistors Text: 3QE D • 7121237 QDBQTTB D ■ Ì Eu SGS-THOMSON ^I TO «S BFW43 BFW44 S G S-THOMSON HIGH VOLTAGE AMPLIFIERS DESCRIPTIO N T h e B F W 43 and B F W 44 a re silicon planar epitaxial P N P transistors in Jedec T O -1 8 B F W 4 3 and Jede c T O -3 9 (B F W 4 4) m etal cases.	OCR Scan	BFW43 BFW44 GQ3Q175 BFW43-BFW44 T-31-19 bfw44 BFW transistors	PDF
BFR 450 Abstract: BFR36 BFY 93 bft95 BFw 94 BFR10 BFR96 BFT95H BFW16A BFW17A Text: PROFESSIONAL TRANSISTORS continued ex. (5) (s \ œ •Q o œ -a Ll_ z £3. > 'i < o LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 B FR 37 NPN B FR 38 PNP BFR 90* NPN NPN B FR 91* B F R 96* NPN BF R97/2N 3866 NPN B F R 98/2N 4427 NPN PNP BFR 99 PNP BFT95	OCR Scan	BFR10 BFR36 BFR96* 97/2N BFR16 BFX31 BFX37 BFW43 BFW44 BFX90 BFR 450 BFY 93 bft95 BFw 94 BFR96 BFT95H BFW16A BFW17A	PDF

transistors BC 458 Abstract: BC 458 transistors BC 458 pnp transistor BC 458 BC 459 transistors BC 459 bf 478 BC479 TO-18 BC-177 pnp transistor 2N5415 Text: rZ J SGS-THOMSON ¡M »iü i g¥[M «(gS GENERAL PURPOSE & INDUSTRIAL ^7# SMALL SIGNAL TRANSISTORS PNP TRANSISTORS FOR LOW LEVEL, LOW NOISE APPLICATIONS - TO 18 v CEO hFE mln/max ic fi% Type (mA) (V) 7> v CE(sat) max lcflB (mA) (V) «T min NF (MHz) (dB) (mW)	OCR Scan	BFX37 BCY79 BCY78 BFX91 transistors BC 458 BC 458 transistors BC 458 pnp transistor BC 458 BC 459 transistors BC 459 bf 478 BC479 TO-18 BC-177 pnp transistor 2N5415	PDF
BFW 10 fet Abstract: No abstract text available Text: BFW12 BFW13 J V N-CHANNEL SILICON FETS Sym m etrical n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes w ith the shield lead connected to the case. The transistors are intended for battery powered equipment and other low current-low voltage applications.	OCR Scan	BFW12 BFW13 003S7A4 bb53T31 BFW 10 fet	PDF
bfw10 equivalent Abstract: BFW10 BFW10 in drain resistance transistors BFW10 BFW11 bfw11 equivalent 400M C15-015 Text: BFW10 BFW11 N-CHANNËL SILICON FETS Symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO -72 metal envelopes with the shield lead connected to the case. The transistors are designed for broad band amplifiers 0 to 300 MHz . Their very low noise at low frequencies makes these devices very suitable for differential	OCR Scan	BFW10 BFW11 bfw10 equivalent BFW10 in drain resistance transistors BFW10 bfw11 equivalent 400M C15-015	PDF
59VIII Abstract: 79VIII BCY 62 59IX BCY 68 79-IX BCY57 BCY58VII BCY58VIII T018 Text: BHARAT ELEK/SEfllCOND DI 47E D • 14353^0 □□□□013 72? ■ B E L l T '"Zf'OÍ VCE Si Device No VCEO VCBO Volts mm Volts mm V ebo Vofts mm hFE at bias min /max Ic mA VCE Volts 1CM mA max Ptol mW max ICBO <A typ (Sat Volts typ fT MHz typ Cob pF typ	OCR Scan	BCY57 BCY58VII BCY58VIII 59VIII 100min. 78VII 78VIII 79VII 79VIII BFW10 59VIII 79VIII BCY 62 59IX BCY 68 79-IX BCY58VIII T018	PDF
transistor BD 540 Abstract: Transistor BFT 99 Transistor BFR 39 BFW 10 fet Transistor BFR 80 Transistor BFT 10 transistor BFT 41 371b Transistor BFT 42 TRANSISTOR bd 108 Text: 6 0 9 y e a MICRO ELECTRONICS CORF D E \| b [ m 7 f i a DOGObS? D \| 02 82D 00657 D *7^ 12.5?“ N O. B C W 94 BCW 95 BCW 96 BCW 97 B C X 25 BCX26 B C X 40 B C X 45 BCX 46 ' ' M AXIM UM R A T IN G S V C E S A T Ul u. TYPE X P O L A R IT Y Medium Kower Am plifiers and Switches	OCR Scan	609yea BCW94 O-92F BCW96 BCW95 BCW97 BCW94 transistor BD 540 Transistor BFT 99 Transistor BFR 39 BFW 10 fet Transistor BFR 80 Transistor BFT 10 transistor BFT 41 371b Transistor BFT 42 TRANSISTOR bd 108	PDF
2sd 5023 Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945 Text: SEMICONDUCTORS INC OTE D \| fil3t.t,5Q □D0Q2C12 7 \| T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1	OCR Scan	-26UNF-2A O-48D 2sd 5023 transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945	PDF
2sd 5023 Abstract: bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345 Text: SEMICONDUCTORS INC OTE D \| fil3t.t,5Q □D0Q2C12 7 \| T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE ic (A) VCEO IV) min max 40 35 40 40 40 120 VCE(SAT) max (A) (Vï COMPLE MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1	OCR Scan	13LLSD to-39 2sd 5023 bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345	PDF
BF272 Abstract: ampli lineaire AMPLI LINEAIRE FM Transistor BFR 96 if amplifier BF167 cb amplifier BF509 L 146 CB BF199 Text: 4 0. 900 MHz class A linear for CATV/MATV applications f\ TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO min. (V) (M Hz) le Im A) C l2e C22b* (pF) l\IF @ (dB) BFX 89 BFY90 BFR 99 BFR 38 N N P P TO-72 TO-72 TO-72 TO-72	OCR Scan	BF272 BF1300 CB-146 ampli lineaire AMPLI LINEAIRE FM Transistor BFR 96 if amplifier BF167 cb amplifier BF509 L 146 CB BF199	PDF
MRF245 Abstract: PT8828 BFY70 J0303 CM-501 sd1238 2N6096 RF Transistor S10-12 2N4932 BLY94 Text: 960. 1215 MHz class C pulse for DME/IFF/TACAN transistors pour applications D M E /IFF/TAC A N puisées, classe C TYPE PACKAGE CONFIG. V cc V SD 1528 .280 4L STU D (A) S D 1528-1 .280 4LSL (A) S D 1528-8 .250 2LFL HERM SD 1530 .280 4L STU D (A) SD 1530-1	OCR Scan	CB-403) CB-410) CB-303) CB-4111 CB-306) CB-407) 1CB-404) CB-408) CB-409) 52N6082 MRF245 PT8828 BFY70 J0303 CM-501 sd1238 2N6096 RF Transistor S10-12 2N4932 BLY94	PDF
BFR99 Abstract: BC377 UHF UHF Transistors transistor 2n 3839 BFR38 t 3866 transistor 2N956 BFX89 BSX33 uhf amplifier Text: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL SMALL SIGNAL TRANSISTORS TRANSISTORS FOR RADIO FREQUENCY APPLICATIONS Noise figure Trans. Freq. Max ratings Polar. Type Main unction Package •c NF (MHz (mA) 1000 le f pg m (mA) (MHz) m 3 3.5 3 800 850 1000 typ 1200	OCR Scan	BFR38 BSX33 2N956 BFR99 BC377 UHF UHF Transistors transistor 2n 3839 t 3866 transistor BFX89 uhf amplifier	PDF

BFW TRANSISTORS Search Results

BFW TRANSISTORS Result Highlights (5)

BFW TRANSISTORS Datasheets Context Search

GL+7837

BFW16

BFW17A

BFW16A

GERMANIUM SMALL SIGNAL TRANSISTORS

BFW92

TRANSISTOR BFW 16

BFW92

Transistor BFR 96

bss17

bfw44

BFR 450

bfw44

BFR 450

transistors BC 458

BFW 10 fet

bfw10 equivalent

59VIII

transistor BD 540

2sd 5023

2sd 5023

BF272

MRF245

BFR99