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    BFW10 TRANSISTOR Search Results

    BFW10 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    BFW10 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BFW10 JFET

    Abstract: No abstract text available
    Text: BFW10 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A)20m I(G) Max. (A)10m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(GSS) Max. (A).1u @V(GS) (V) (Test Condition)20 V(GS)off Min. (V) I(DSS) Max. (A)20m


    Original     		BFW10 BFW10 JFET PDF

    BSV81

    Abstract: j310 replacement bfw11 j310 equivalent BSD211 BSV80 BSD215 BFW10 bfw10 transistor J310
    Text: Philips Semiconductors Small-signal Field-effect Transistors Replacement list REPLACED/WITHDRAWN TYPES The following type numbers were included in the previous issue of this data handbook, but are not in the current edition. TYPE NUMBER REASON FOR DELETION


    Original     		2N4091 2N4092 2N4093 2N4391 2N4392 2N4393 2N4416 2N4416a 2N4856 2N4857 BSV81 j310 replacement bfw11 j310 equivalent BSD211 BSV80 BSD215 BFW10 bfw10 transistor J310 PDF

    E112 jfet

    Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
    Text: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261


    Original     		LS422 LS423 LS424 LS425 LS426 LS832 LS833 LS4391 LS5911 E112 jfet siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565 PDF

    TRANSISTOR DATASHEET D1555

    Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
    Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440


    Original     		2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878 PDF

    BFW11

    Abstract: BFW10 bfw10 equivalent bfw10 transistor bfw11 equivalent BFW10 in drain resistance 1Z62 BFW118 electromedical 7z08
    Text: 711002b 00b7bb4 IbS • I P HI N BFW10 BFW11 N-CHANNEL SILICON FETS Symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes with the shield lead connected to the case. The transistors are designed for broad band amplifiers 0 to


    OCR Scan     		711002b 00b7bb4 BFW10 BFW11 8fw10 711002t. Q0b7b73 BFW10 BFW11 bfw10 equivalent bfw10 transistor bfw11 equivalent BFW10 in drain resistance 1Z62 BFW118 electromedical 7z08 PDF

    bfw10 equivalent

    Abstract: BFW10 BFW10 in drain resistance transistors BFW10 BFW11 bfw11 equivalent 400M C15-015
    Text: BFW10 BFW11 N-CHANNËL SILICON FETS Symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO -72 metal envelopes with the shield lead connected to the case. The transistors are designed for broad band amplifiers 0 to 300 MHz . Their very low noise at low frequencies makes these devices very suitable for differential


    OCR Scan     		BFW10 BFW11 bfw10 equivalent BFW10 in drain resistance transistors BFW10 bfw11 equivalent 400M C15-015 PDF

    BFW11

    Abstract: bfw11 equivalent BFW10 in drain resistance
    Text: BFW10 BFW11 N-CHANNEL SILICON FETS Symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes with the shield lead connected to the case. The transistors are designed for broad band amplifiers 0 to 300 MHz . Their very low noise at low frequencies makes these devices very suitable for differential


    OCR Scan     		BFW10 BFW11 bb53T31 DQ3S77b BFW11 bfw11 equivalent BFW10 in drain resistance PDF

    BFW10

    Abstract: BFW11 bfw10 equivalent BFW10 in drain resistance bfw11 equivalent
    Text: BFW10 BFW11 N-CHANNEL SILICON FETS Symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes with the shield lead connected to the case. The transistors are designed fo r broad band amplifiers 0 to 300 MHz . Their very low noise at low frequencies makes these devices very suitable fo r differential


    OCR Scan     		BFW10 BFW11 BFW10 V0S-15V BFW11 bfw10 equivalent BFW10 in drain resistance bfw11 equivalent PDF

    7.1 Channel audio amplifier

    Abstract: amplifier audio BFT46 BF861A n channel audio BFW12 BF410C BF512 transistors BFW10
    Text: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs JUNCTION FETS FOR AMPLIFIERS OVERVIEW_PRODUCT DATA: PAGES 36-37 N/P _ leaded_


    OCR Scan     		BFW13 BFW12 BFW11 BFW10 BF245A BF245B BF245C BF256A BF256B BF545A 7.1 Channel audio amplifier amplifier audio BFT46 BF861A n channel audio BF410C BF512 transistors BFW10 PDF

    j310 replacement

    Abstract: BSD211 BFW12 BFW10 BSV79 bf245a-c BF246C 2N4092 2n4393 replacement bfw11
    Text: Philips Semiconductors Small-signal Field-effect Transistors Replacement list REPLACED/WITHDRAWN TYPES The following type numbers were included in the previous issue of this data handbook, but are not in the current edition. TYPE NUMBER REASON FOR DELETION


    OCR Scan     		2N4091 2N4092 2N4093 2N4391 2N4392 2N4393 2N4416 2N4416a 2N4856 2N4857 j310 replacement BSD211 BFW12 BFW10 BSV79 bf245a-c BF246C 2n4393 replacement bfw11 PDF

    bfw11 jfet

    Abstract: jfet bfw10 Field Effect Transistors BFW12 BFW10 JFET BF256B BF964S BF96 BF964 BF960
    Text: Small Signal Leaded Devices Field Effect Transistors J-FET cont. ±V DS •d s s -vh{P) GS Pkg (V) (mA) (V) T O -18 T O -18 T O -18 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-18 TO-18 TO-18 TO-72 TO-72 TO-72 TO-72


    OCR Scan     		2N4859 2N4860 2N4861 BF245A/0 BF245A BF245B BF245C BF247A BF247B BF247C bfw11 jfet jfet bfw10 Field Effect Transistors BFW12 BFW10 JFET BF256B BF964S BF96 BF964 BF960 PDF

    BF247A

    Abstract: bs250 bs170 PMBFJ111 PMBFJ174 BSR56 BFT46 PHC21025 BF909WR
    Text: Philips Semiconductors Small-signal Field-effect Transistors Index ALPHANUMERIC INDEX Types added to the range since the last issue of Handbook SC07 1994 issue are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE 150 BS170 347 150


    OCR Scan     		BS170 BS208 BF904 BF904R BF904WR BS250 BC264D BF908 BSD12 BF245A BF247A bs250 bs170 PMBFJ111 PMBFJ174 BSR56 BFT46 PHC21025 BF909WR PDF

    59VIII

    Abstract: 79-IX BCY 68 BCY58X BCY 62 BFW10 59vii BHARAT elek BCY58VII BCY58VIII
    Text: BH AR AT E L E K / S E m C O N D DI 47E D • 1 4 3 5 3^ 3 □ □ □□ □1 3 ?B? ■ B E L l T ~ 2 7 '0 t VCE Si V CEO D e vice No VCBO Volts V o lts mm mm V ebo V ofts min hFE Ic V CE i CM at bias min /max mA Volts mA max Ptol mW ICBO »¿A typ max S at


    OCR Scan     		BCY57 BCY58VII BCY58VIII 59VIII 100min. 78VII 78VIII BCY79VII 79VIII BFW10 59VIII 79-IX BCY 68 BCY58X BCY 62 59vii BHARAT elek BCY58VIII PDF

    BFW12

    Abstract: bc264c BFT46
    Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs N-CHANNEL JUNCTION FETS FOR AMPLIFIERS rating type number characteristics ± V DS max. ’d ss Ciss typ. c rss l v f s l 1 pF) typ.


    OCR Scan     		PMBFJ308 PMBFJ309 PMBFJ310 PMBF4416 PMBF4416A PMBF5484 PMBF5485 PMBF5486 BFW12 bc264c BFT46 PDF

    F245B

    Abstract: BF256 2N3820 BC264 U1898E BFS21A MPF105 vergleichsliste BF320 TIS69
    Text: FACHHÄNDLER INFORMATION DISKRETE PRODUKTE FETs Warum FET-Vorzugsprodukte? Weil: • 20% unserer Produkte mehr als 80% aller Anforderungen erfüllen. ■ wir unsere Produkte mittels Computer analysiert haben nach: größtem Bedarf notwendigen Parametern niedrigsten Kosten


    OCR Scan     		100-MHz F245B BF256 2N3820 BC264 U1898E BFS21A MPF105 vergleichsliste BF320 TIS69 PDF

    FET BFW10

    Abstract: BFW10 pins OF FET BFW11 OF FET BFW10 BFW10 FET BSV81 BF327 BFW10 FET transistor BFS28 FET BFW11
    Text: Transistors silicon n-channel field effect transistors Type No. Drawing reference book 1 parts 1 and 2 e c 3 O VDB v SB V (V ) M axim um Ratings - VgBM 1dm Tj m ax. (V ) (m A) (°C ) Special Features Pt„t rOSion) 1'DStoffl at 25°C (mW) (£2) (£ï) INSULATED GATE FET (MOST)


    OCR Scan     		BSV81 h--22-> crt6-25 FET BFW10 BFW10 pins OF FET BFW11 OF FET BFW10 BFW10 FET BF327 BFW10 FET transistor BFS28 FET BFW11 PDF

    philips bsd215

    Abstract: BST110 BF909WR
    Text: Philips Semiconductors Selection guide Small-signal Field-effect Transistors N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS CHARACTERISTICS TYPE NUMBER ± V Ds PACKAGE V Id Ig (mA) ly ts l ss “ V (P )G S min - max (mA) min. (mS) (V ) C r, PAGE (PF) Hi-fi amplifiers and AF equipment


    OCR Scan     		BC264A BC264B BC264C BC264D BF245A BST120 BST122 PHP112 PHP125 PHC2102501 philips bsd215 BST110 BF909WR PDF

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc PDF

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


    OCR Scan     		BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11 PDF

    triac LT 5220

    Abstract: BF247 bd130 by103 LIF 4117 2N3020 2N2405 bu208 2N7923 2n5716
    Text: Product Guide Page Rectifiers Transistors 20 Switching, Small Signal, Medium Power, High Power, High Frequency . 4 th ru 14 Transistors (Fets) 15 th ru 17 Thyristors 21 th ru 22 Triacs 23 Zeners 18 thru 19 Outlines 24 thru 25 Index 2 thru 3 (A LPH A NUM ERIC)


    OCR Scan     		041P9C RO-45 O-92/1/2/3 O-92/5 O-106 O-220 triac LT 5220 BF247 bd130 by103 LIF 4117 2N3020 2N2405 bu208 2N7923 2n5716 PDF

    E421 fet

    Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet
    Text: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.


    OCR Scan     		O-72P* O-92X O-105 O-106 O-106P E421 fet equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet PDF

    TCA160

    Abstract: BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300
    Text: MULLARD DATA BOOK 1973-74 ER R A TA A U G U S T 1973 j\ 1 d - ^ Mullard Limited Renewal Sales Department Mullard House Torrington Place London WC1E 7HD N / , S E M IC O M D U C Type No. Page No. AC187 13 Correction Delete minus signs to read: *IC = 300m A;


    OCR Scan     		AC187 BC157 BC158 BC159 BC186 BC187 BD201 BD202 BD203 BD204 TCA160 BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300 PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF