BFW92A
Abstract: No abstract text available
Text: BFW92A Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 13623 1 BFW92A Marking: BFW92A
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BFW92A
BFW92A
D-74025
20-Jan-99
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Untitled
Abstract: No abstract text available
Text: BFW92A VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 3 B 1 C 3 • High power gain • Low noise figure 2 E Applications 2 Wide band RF amplifier up to GHz range. 1 Mechanical Data 19039 Electrostatic sensitive device. Observe precautions for handling.
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BFW92A
BFW92A
55ake
D-74025
26-Aug-04
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BFW92A
Abstract: No abstract text available
Text: BFW92A Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 13623 1 BFW92A Marking: BFW92A Plastic case TO 50
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BFW92A
BFW92A
D-74025
31-Oct-97
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BFW92A
Abstract: B 1566 Transistor
Text: BFW92A Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 13623 1 BFW92A Marking: BFW92A
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BFW92A
BFW92A
D-74025
20-Jan-99
B 1566 Transistor
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BFW92A
Abstract: No abstract text available
Text: Not for new design, this product will be obsoleted soon BFW92A Vishay Semiconductors Silicon NPN Planar RF Transistor B 1 C 3 Features • • • • 3 2 High power gain Low noise figure e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC
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BFW92A
2002/95/EC
2002/96/EC
BFW92A
18-Jul-08
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BFW92
Abstract: bfw92a
Text: BFW92A Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • 3 B 1 C 3 High power gain Low noise figure e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 E 2 1 Applications 19039 Electrostatic sensitive device.
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BFW92A
2002/95/EC
2002/96/EC
BFW92A
D-74025
29-Apr-05
BFW92
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BFW92A
Abstract: No abstract text available
Text: BFW92A Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • 3 B 1 C 3 High power gain Low noise figure e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 E 2 1 Applications 19039 Electrostatic sensitive device.
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BFW92A
2002/95/EC
2002/96/EC
08-Apr-05
BFW92A
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BFW92A
Abstract: No abstract text available
Text: BFW92A Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 13623 1 BFW92A Marking: BFW92A
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BFW92A
BFW92A
D-74025
20-Jan-99
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din 3141
Abstract: BFW92A transistor bfw 88 bfw 92 bfw 96
Text: BFW 92 A TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Wide band RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 1 BFW92A Marking Plastic case XTO 50 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings
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BFW92A
D-74025
din 3141
transistor bfw 88
bfw 92
bfw 96
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BFW92A
Abstract: No abstract text available
Text: BFW92A Silicon NPN Planar RF Transistor Applications Wide band RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 1 BFW92A Marking: BFW92A Plastic case TO 50 1= Collector; 2= Emitter; 3= Base Absolute Maximum Ratings
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BFW92A
BFW92A
D-74025
18-Apr-96
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Transistor B 1566
Abstract: BFW92A
Text: BFW92A Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 13623 1 BFW92A Marking: BFW92A
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BFW92A
BFW92A
D-74025
20-Jan-99
Transistor B 1566
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2SC3355 SPICE MODEL
Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness
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F2002:
F2003:
F2004:
2SC3355 SPICE MODEL
transistor C2003
C319B
MGF1412
RF TRANSISTOR 10GHZ
MRF134 rf model .lib file
2SK571
MGF1402
MRF9331
pb_hp_at41411_19921101
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MAR 641 TRANSISTOR
Abstract: bfw92a mar 617
Text: Temic BFW92A Semiconductors Silicon NPN Planar RF Transistor Applications Wide band RF amplifier up to GHz range. Features • High power gain • Low noise figure BFW92A Marking: BFW92A Plastic case TO 50 1= Collector; 2= Emitter; 3= Base Absolute Maximum Ratings
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BFW92A
BFW92A
26-Mar-97
MAR 641 TRANSISTOR
mar 617
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din 3141
Abstract: No abstract text available
Text: TEMIC BFW92A Semiconductors Silicon NPN Planar RF Transistor Applications Electrostatic sensitive device. Observe precautions for handling. ^ Wide band RF amplifier up to GHz range. Features • High power gain • Low noise figure BFW92A Marking: BFW92A Plastic case TO 50
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BFW92A
BFW92A
D-74025
31-Oct-97
din 3141
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Untitled
Abstract: No abstract text available
Text: BFW92A ViSHAY _ ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications Wide band RF amplifier up to GHz range. Features • High power gain • Low noise figure
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BFW92A
BFW92A
D-74025
20-Jan-99
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BFW92A
Abstract: SP 1191 BFW92 transistor BFW92A
Text: bbS3T31 Philips S em iconductors DD3Sm2 T34 Product specification APX NPN 3 GHz wideband transistor BFW92A N AMER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN transistor in a plastic SOT37 envelope. DESCRIPTION PIN It is primarily Intended for use in amplifiers in the 40 to 860 MHz
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bbS3T31
0D32142
BFW92A
BFW92A
BFW92
BFW92A/02
SP 1191
transistor BFW92A
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BFQ161
Abstract: SOT37
Text: 57 RF/Microwave Devices RF Wideband Transistors cont. Type No. BFS25A BFS505 BFS520 BFS540 BFT24 BFT25 BFT25A BFT92 BFT92AW BFT93 BFT93AW BFW16A BFW17A BFW30 BFW92 BFW92A BFW93 BFY90 Ratings M lc * Characteristics Polarity Package Outline Curve No. VcEO
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OT-323
OT-37
OT-23
BFQ161
SOT37
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S852T
Abstract: BF579 T0-50 BF964S BF96 BFP183T
Text: Tem ic Semiconduct ors Selector Guide Dual-Gate Si-MOSFETs N-Channel Depletion Mode Number BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T VD5 V 20 20 20 12 20 20 20 12 20 10 lümax mA 30 30 30 30 30 30 30 30 30 20 Iy2isl at Ids mA mS 15
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BF961
BF964S
BF966S
BF988
BF994S
BF995
BF996S
BF998
S525T
S888T
S852T
BF579
T0-50
BF96
BFP183T
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s525
Abstract: s918 BF988 bfr96ts S858TA3 BF-970 BFP183T
Text: Tem ic Semiconductors General Information Alphanumeric Index Type. T ype . Type. Type . BFR90A 9, 243 S593T 8, 105 BFR91 9, 250 S594T 8, 112 9, 163 BFR91A . . . . 9, 256 S595T 8, 119 BFP81 9, 173 BFR92 S822T 9, 338 8. 52
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BF569
BF579
BF961
BF964S
BF966S
BF970
BF979
BF988
BF994S
BF995
s525
s918
bfr96ts
S858TA3
BF-970
BFP183T
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2N5179
Abstract: high gain PNP RF TRANSISTOR 2N4957 2N2857 2N3866 MOTOROLA 2N2857 MOTOROLA MOTOROLA 2N5179 motorola european master selection 2n4958 Y parameters of transistors
Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro
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17A-01
05A-01
Gain-200
MRF502
BFX89
BFY90
2N5179
2N2857
MRF904
MRF914
high gain PNP RF TRANSISTOR
2N4957
2N3866 MOTOROLA
2N2857 MOTOROLA
MOTOROLA 2N5179
motorola european master selection
2n4958
Y parameters of transistors
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MRF965
Abstract: 2N5109 motorola 2N5179 motorola 2N5179 high gain PNP RF TRANSISTOR BFY90 MOTOROLA MRF586 2n6603 transistor MRF542 RF 2N3866
Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro
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17A-01
05A-01
Gain-200
MRF502
BFX89
BFY90
2N5179
2N2857
MRF904
MRF914
MRF965
2N5109 motorola
motorola 2N5179
high gain PNP RF TRANSISTOR
BFY90 MOTOROLA
MRF586
2n6603 transistor
MRF542
RF 2N3866
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2N3866 MOTOROLA
Abstract: 2N3866 MOTOROLA s parameters 2n5179 10 GHz PNP transistor npn UHF transistor 2N5179 2N2857 MOTOROLA MOTOROLA 2N5179 2n2857 RF POWER TRANSISTOR NPN, motorola 2n4957
Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro
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17A-01
05A-01
2N5829
2N5031
MRF904
MRF571
RF572/M
RF2369
2N3866 MOTOROLA
2N3866 MOTOROLA s parameters
2n5179
10 GHz PNP transistor
npn UHF transistor 2N5179
2N2857 MOTOROLA
MOTOROLA 2N5179
2n2857
RF POWER TRANSISTOR NPN, motorola
2n4957
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2N5109 motorola
Abstract: BFY90 MOTOROLA 2N5583 MRF965 bfr91 motorola MRF586 MOTOROLA 2N5179 2n4427 MOTOROLA macro-X ceramic 2N3866A
Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro
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17A-01
05A-01
MRF587
44A-01
2N3959
2N3960
2N5835
MM4049*
MRF914
2N5943
2N5109 motorola
BFY90 MOTOROLA
2N5583
MRF965
bfr91 motorola
MRF586
MOTOROLA 2N5179
2n4427 MOTOROLA
macro-X ceramic
2N3866A
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triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.
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SG73/D
triac zd 607
1n5204
CA2820 TRW
2N4427 equivalent bfr91
2N6823
842 317 SO8
BD243 PINOUT
BD529
bf506
BF845
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