BG3130. Search Results
BG3130. Price and Stock
Infineon Technologies AG BG3130E6327HTSA1RF MOSFET 5V SOT363 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BG3130E6327HTSA1 | Reel |
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Infineon Technologies AG BG3130H6327XTSA1RF MOSFET 5V SOT363 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BG3130H6327XTSA1 | Reel |
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BG3130H6327XTSA1 | 531,000 | 3,632 |
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BG3130H6327XTSA1 | 539,693 | 1 |
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Rochester Electronics LLC BG3130H6327XTSA1RF MOSFET 5V SOT363 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BG3130H6327XTSA1 | Bulk | 2,968 |
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Infineon Technologies AG BG3130RH6327XTSA1RF MOSFET 5V SOT363 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BG3130RH6327XTSA1 | Reel |
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BG3130RH6327XTSA1 | 607,750 | 4,071 |
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BG3130RH6327XTSA1 | 607,750 | 1 |
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Rochester Electronics LLC BG3130RH6327XTSA1RF MOSFET 5V SOT363 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BG3130RH6327XTSA1 | Bulk | 3,328 |
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Buy Now |
BG3130. Datasheets (14)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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BG3130 |
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DUAL N-Channel MOSFET Tetrode | Original | |||
BG3130 |
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Dual Semi Biased; Package: PG-SOT363-6; ID (max): 25.0 mA; Ptot (max): 200.0 mW; gfs (typ): 33.0 mS; Gp (typ): 24.0 dB; F (typ): 1.3 dB; | Original | |||
BG3130E6327 |
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RF FETs, Discrete Semiconductor Products, MOSFET N-CH DUAL 8V SOT-363 | Original | |||
BG3130E6327 |
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TRANS MOSFET N-CH 8V 0.025A 6SOT-363 T/R | Original | |||
BG3130E6327HTSA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - MOSFET N-CH DUAL 8V SOT-363 | Original | |||
BG3130H6327 |
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RF FETs, Discrete Semiconductor Products, MOSFET N-CH DUAL 8V 25MA SOT363 | Original | |||
BG3130H6327XTSA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - MOSFET N-CH DUAL 8V 25MA SOT363 | Original | |||
BG3130R |
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DUAL N-Channel MOSFET Tetrode | Original | |||
BG3130R |
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Dual Semi Biased; Package: PG-SOT363-6; ID (max): 25.0 mA; Ptot (max): 200.0 mW; gfs (typ): 33.0 mS; Gp (typ): 24.0 dB; F (typ): 1.3 dB; | Original | |||
BG3130RE6327 |
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RF FETs, Discrete Semiconductor Products, MOSFET N-CH DUAL 8V SOT-363 | Original | |||
BG3130RE6327 |
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TRANS MOSFET N-CH 8V 0.025A 6SOT-363 T/R | Original | |||
BG3130RE6327BTSA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - MOSFET N-CH DUAL 8V SOT-363 | Original | |||
BG3130RH6327 |
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RF FETs, Discrete Semiconductor Products, MOSFET N-CH DUAL 8V 25MA SOT363 | Original | |||
BG3130RH6327XTSA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - MOSFET N-CH DUAL 8V 25MA SOT363 | Original |