Untitled
Abstract: No abstract text available
Text: Optical disc ICs Post amplifier applicable with 1-bit D/A converter BH3562F The BH 3562F is a post am plifier applicable with 1-bit D/A converter for com pact d isc players. # A pplications Portable CD players, etc. •F e a tu re s 1 Two channel analog filter for 1 bit digital-audio converters.
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BH3562F
3562F
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T1P102
Abstract: No abstract text available
Text: bH TEXAS I N S T R -COPTO} Ï Ë J Ö lbl7ab 896-1726 TEXAS INSTR OPTO 0D3bö7D □ 62C 3Ó870 TIP100, TIP101, TIP102 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS _ J A N U A R Y 1 9 7 7 - RE V ISE D OCTO BER 1 9 84 • Designed for Complementary Use with TIP105, TIP106, TIP107
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TIP100,
TIP101,
TIP102
TIP105,
TIP106,
TIP107
2N6045
2N6388
TIP102'
T1P102
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Untitled
Abstract: No abstract text available
Text: Optical disc ICs Post amplifier applicable with 1-bit | D/A converter BH3561AF The BH 3561A F is a post am plifier applicable with 1-bit D /A converter for com pact disc players. •A p p lic a tio n s C D players, etc. •F e a tu re s 1 2-channel analog filter IC for 1-bit D /A converters.
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BH3561AF
BH3561AF
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MMBF112L
Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty
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06050L
MMBD914L
BAS16L
BAL99L
MBAV70L
MBAV99L
MBAV74
BD2835XL
MBD2836XL
MMBD2837XL
MMBF112L
MFE521
MMBF112
2N3797 equivalent
MFE131 equivalent
MPS5210
BC557 SOT23
8C448
BC459C
mfe211
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multi-emitter transistor
Abstract: SOT-48 BLX96 IEC134 BLX-96 IEC-134
Text: bSE D • 7110a2b Q0b35MÛ 472 ■ PHIN MAINTENANCE TYPE_ | BLX96 PHILIPS INTERNATIONAL U.H.F. LINEAR POWER TRANSISTOR N -P -N m u lti-e m itte r silicon planar ep itaxial transistor p rim a rily fo r use in linear u .h .f. am plifiers fo r television transposers and tran sm itters.
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711D82b
BLX96
multi-emitter transistor
SOT-48
BLX96
IEC134
BLX-96
IEC-134
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ferroxcube wideband hf choke
Abstract: BLV99 002im3
Text: N AMER PHI LIP S/DISCRETE bTE D Jl • ^53*131 □ OE'ilfl'i 40Û BLV99 U.H.F. POWER TRANSISTOR N-P-N silicon planar e p ita xia l tra n sisto r p rim a rily intended fo r use as a driver-stage in base stations in the 90 0 M H z co m m u n ica tio n s band.
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BLV99
OT172A1)
OT172A1.
960MHz;
ferroxcube wideband hf choke
BLV99
002im3
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Untitled
Abstract: No abstract text available
Text: i - 86D 0 1 86 0 m ObE D N AUER PHILIPS/DISCRETE D T - bbSBTBl DDIMDIS 3 T" 7 3 BLX97 MAINTENANCE TYPE U.H.F. LINEAR POWER TRANSISTOR N-P-N m ulti-em itter silicon planar epitaxial transistor primarily fo r use in linear u.h.f. amplifiers for television transposers and transmitters.
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BLX97
class-78
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MTD2955
Abstract: CBVK741B019 F63TNR FDD6680 MTD2955V
Text: MTD2955V P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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MTD2955V
MTD2955
CBVK741B019
F63TNR
FDD6680
MTD2955V
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Untitled
Abstract: No abstract text available
Text: IRFR9024* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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IRFR9024
IRFR9024*
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Untitled
Abstract: No abstract text available
Text: MTD3055V* N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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MTD3055V
MTD3055V*
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Untitled
Abstract: No abstract text available
Text: MTD2955V* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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MTD2955V
MTD2955V*
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Mosfet FDD
Abstract: CBVK741B019 F63TNR FDD6680 MTD3055V
Text: MTD3055V N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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MTD3055V
Mosfet FDD
CBVK741B019
F63TNR
FDD6680
MTD3055V
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DSAS 13-0
Abstract: d92 02 a9hv
Text: IRFR9024 P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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IRFR9024
DSAS 13-0
d92 02
a9hv
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a9hv
Abstract: No abstract text available
Text: MTD2955V P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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MTD2955V
a9hv
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CA3086
Abstract: CA3016
Text: i H A R IR IS U V CA3086 S E M I C O N D U C T O R General Purpose N-P-N Transistor Array March 1993 Applications Description • Three Isolated Transistors and One Differentially Con nected Transistor Pair For Low-Power Applications from DC to 120 MHz
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CA3086
CA3086
120MHz.
CA3016
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BH RE transistor
Abstract: No abstract text available
Text: PNP Silicon RF Transistor BF 569 Suitable fo r o scillators, m ixers and self-oscillating m ixer stages in UHF TV tu n ers Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package BF 569 LH Q62702-F548 Q 62702-F869 SOT 23
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Q62702-F548
62702-F869
BH RE transistor
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BLX67
Abstract: mrtil transistor 3568
Text: N AMER PHILIPS/DISCRETE 8 6D ObE 01766 I D 7 -" ~ j • 1^53^31 G014DDM 3 - o Jr ~ BLX67 A U.H.F./V.H.F. POWER TRANSISTOR N-P-N silicon transistor for use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V,
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G014DDM
BLX67
T-33-Ã
BLX67
mrtil
transistor 3568
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MCN transistor
Abstract: BSS44
Text: SGS-TtiOMSON »eiamtieìMoes BSS44 SILICON NPN TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP TRANSISTOR DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications
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BSS44
BSS44
MCN transistor
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PJ 976
Abstract: 2SD2157 2SD215 2SD2157A
Text: Power Transistors 2SD2157, 2SD2157A 2SD2157, 2SD2157A Package Dim ensions Silicon NPN Triple-Diffused Planar Darlington Type Power A m plifie r • Features • High D C c u r re n t gain htF • H igh sp e e d sw itch in g • “Full P a c k ” p ack ag e for sim plified m o unting on a h e a t sink w ith
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2SD2157,
2SD2157A
2SD2157
2SD2157
10Vx0
100x2.
PJ 976
2SD215
2SD2157A
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CA3045
Abstract: CA3046 equivalent ca301b CA3046 Harris CA3046 CA3046M
Text: rp CA3045, CA3046 H A R R IS S E M I C O N D U C T O R General Purpose N-P-N Transistor Arrays M arch 1993 Features Description • Two Matched Transistors: V BE Matched ±5mV; Input Offset Current 2 iA Max at lc = 1mA T h e C A 3 0 4 5 and C A 3 0 4 6 each consist of five general
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CA3045,
CA3046
CA3046
CA3045
CA3046 equivalent
ca301b
Harris CA3046
CA3046M
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TRANSISTOR BH RW
Abstract: No abstract text available
Text: Silicon N-Channei M OSFET Tetrode BF 998 • Short-channel transistor with high S/C quality factor G2 • For low-noise, gain-controlled input stages up to 1 GHz § Type M a rk in g O rdering code for v e rsio n s in bu lk O rdering co de for v e rs io n s on tape
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62702-F1129
1200MÍ
900MHz
800MHz
/400MHz
300MH
00MHz
-921s
TRANSISTOR BH RW
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BFQ43
Abstract: BFQ43S lyp 809 BLW31 TRANSISTOR A1t
Text: b^E » N AMER PHILIPS/DISCRETE • ^53^31 0DHÔ714 ODD ‘' BFQ43 BFQ43S V.H.F. POWER TRANSISTORS N-P-N silicon planar e pitaxial transistors intended fo r use in class-A, B o r C operated m ob ile tran sm itte rs w ith a nom inal supply voltage o f 13,5 V . T he transistors are resistance stabilized and guaranteed to w ith
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BFQ43
BFQ43S
BFQ43S
BLW31
lyp 809
TRANSISTOR A1t
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2SC1226
Abstract: 335Panasonic 2SA699 2SA699A 2SC1226A 2SA699 H
Text: Power Transistors 2SC1226, 2SC1226A 2SC1226, 2SC1226A Silicon NPN Epitaxial Planar Type Package Dimensions Medium Power Amplifier Complementary Pair with 2SA699, 2SA699A • Feature • 5W o u tp u t in c o m p le m e n ta ry p air w ith 2S A 699, 2SA 699A
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2SC1226,
2SC1226A
2SA699,
2SA699A
2SC1226
335Panasonic
2SA699
2SA699A
2SC1226A
2SA699 H
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2SD2157
Abstract: 2SD2157A
Text: 2SD2157, 2SD2157A Power Transistors 2SD2157, 2SD 2157A P a c k a g e D im e n s io n s Silicon NPN Triple-D iffused Planar D arlington Type P o w e r A m p lifie r • F e a tu re s • High D C c u rre n t gain h tF • High sp eed sw itch in g • “Fu ll P a c k ” p ackage for sim plified m ounting on a h e a t sink with
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2SD2157,
2SD2157A
2SD2157
-25-C
i32052
2SD2157A
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