IRFR9024
Abstract: No abstract text available
Text: IRFR9024* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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IRFR9024*
IRFR9024
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a7w 57
Abstract: a7w transistor
Text: MTD3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 12 A, 60 V. RDS ON = 0.18 Ω @ VGS = 5 V This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC
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MTD3055VL
a7w 57
a7w transistor
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MTD2955V
Abstract: transistor WT9 a9hv
Text: MTD2955V* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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MTD2955V*
MTD2955V
transistor WT9
a9hv
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a7w transistor
Abstract: a7w 57 transistor a7w
Text: MTD3055V* N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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MTD3055V*
a7w transistor
a7w 57
transistor a7w
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a9hv
Abstract: MTD3055VL
Text: MTD3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional
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MTD3055VL
a9hv
MTD3055VL
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MTD3055V
Abstract: fairchild mosfets
Text: MTD3055V* N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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MTD3055V*
MTD3055V
fairchild mosfets
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3055VL
Abstract: a9hv transistor WT9 MTD3055VL u6 transistor AYRA
Text: MTD3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional
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MTD3055VL
MTD3055VL
O-252
3055VL
a9hv
transistor WT9
u6 transistor
AYRA
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Untitled
Abstract: No abstract text available
Text: Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very
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Si4532DY
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D665
Abstract: SI4532DY w992
Text: Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very
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Si4532DY
D665
w992
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MTD2955
Abstract: CBVK741B019 F63TNR FDD6680 MTD2955V
Text: MTD2955V P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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MTD2955V
MTD2955
CBVK741B019
F63TNR
FDD6680
MTD2955V
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Untitled
Abstract: No abstract text available
Text: IRFR9024* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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IRFR9024
IRFR9024*
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Untitled
Abstract: No abstract text available
Text: MTD3055V* N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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MTD3055V
MTD3055V*
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Untitled
Abstract: No abstract text available
Text: MTD2955V* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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MTD2955V
MTD2955V*
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Mosfet FDD
Abstract: CBVK741B019 F63TNR FDD6680 MTD3055V
Text: MTD3055V N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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MTD3055V
Mosfet FDD
CBVK741B019
F63TNR
FDD6680
MTD3055V
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a9hv
Abstract: No abstract text available
Text: MTD2955V P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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MTD2955V
a9hv
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Untitled
Abstract: No abstract text available
Text: Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very
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Si4532DY
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Untitled
Abstract: No abstract text available
Text: Si4532DY Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very
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BLV99
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL b5E ]> WM 711005b 0Gb30ûb 771 M P H I N BLV99 Jl U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended fo r use as a driver-stage in base stations in the 90 0 M H z communications band. Features: • emitter-ballasting resistors fo r an optim um temperature profile
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711055b
0Gb30flb
BLV99
OT172A1)
OT172A1.
711DaSb
BLV99
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4312 020 36640
Abstract: ferroxcube wideband hf choke
Text: PHILIPS INTERNAT ION AL b5E D 751 I IPHIN Ei 711002b BLV75/12 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in m obile radio transm itters in the 175 MHz communications band. Features • multi-base structure and emitter-ballasting resistors fo r an optim um temperature profile
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711002b
BLV75/12
OT-119)
4312 020 36640
ferroxcube wideband hf choke
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ferroxcube wideband hf choke
Abstract: BLV99 002im3
Text: N AMER PHI LIP S/DISCRETE bTE D Jl • ^53*131 □ OE'ilfl'i 40Û BLV99 U.H.F. POWER TRANSISTOR N-P-N silicon planar e p ita xia l tra n sisto r p rim a rily intended fo r use as a driver-stage in base stations in the 90 0 M H z co m m u n ica tio n s band.
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BLV99
OT172A1)
OT172A1.
960MHz;
ferroxcube wideband hf choke
BLV99
002im3
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UAA145
Abstract: three phase pulse generator BH RT transistor Phase Control Circuit for Industrial Applications transistor t20 circuit diagram of thyristor controlled rectifier ramping pulse generator tacho-generator pin10-pin14 thyristor drive
Text: UAA145 Phase Control Circuit for Industrial Applications Description circuits to be drastically reduced. The versatility of the device is further enhanced by the provision of a large number of pins giving access to internal circuit points. Features Applications
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UAA145
UAA145
DIP16
D-74025
29-May-96
three phase pulse generator
BH RT transistor
Phase Control Circuit for Industrial Applications
transistor t20
circuit diagram of thyristor controlled rectifier
ramping pulse generator
tacho-generator
pin10-pin14
thyristor drive
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BLV45/12
Abstract: sot119 blv45-12
Text: N AMER PHILIPS/DISCRETE b'ìE D • ^53^31 □DScîGH2 STb I IAPX BLV45/12 V.H.F. POWER TRANSISTOR N-P-N silicon planar e p ita xia l tran sisto r p rim a rily intended fo r use in m ob ile rad io tra n sm itte rs in th e 175 MHz co m m u n ica tio n s band.
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BLV45/12
OT-119)
BLV45/12
sot119
blv45-12
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OM6508SA
Abstract: OM6509SA RS1002
Text: OM6508SA OM6509SA INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-254AA PACKAGE 500 Volt, 5 And 10 Amp, N-Channel IGBT With a Soft Recovery Diode In A Hermetic Metal Package FEATURES • • • • • • • • • Isolated Hermetic Metal Package
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O-254AA
MIL-S-19500,
125-C
OM6508SA
OM6509SA
RS1002
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TRANSISTOR bHrt
Abstract: transistor 9a2a ga8c STT3PF20V bhrt transistor a6 s STT3PF20
Text: STT3PF20V P-CHANNEL 20V - 0.14 W - 2.2A SOT23-6L 2.7-DRIVE STripFET II POWER MOSFET TYPE STT3PF20V • ■ ■ ■ VDSS !ÃW RDS on 1Ã!ÃWÃ5#$W 1Ã!$ÃWÃ5!&W ID !!Ã6 TYPICAL RDS(on) = 0.14 W (@4.5V) TYPICAL RDS(on) = 0.20 W (@2.7V) ULTRA LOW THRESHOLD GATE DRIVE
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STT3PF20V
OT23-6L
TRANSISTOR bHrt
transistor 9a2a
ga8c
STT3PF20V
bhrt
transistor a6 s
STT3PF20
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