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    AL154

    Abstract: T9.5N
    Text: TELEFUNKEN ELECTRONIC fllC » • fl'iSOO'ib ÛDQbüMÔ 3 BIAL66 T 9,5 N Electrical properties Höchstzulässige Werte Udrm. Uhrh Periodische Vorwärts-und Rückwärts-Spltzensperrspannung Itrmsm Effektiver Durchlaßstrom Itavm Dauergrenzstrom Maximum permissible values


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    120x120x1 AL154 T9.5N PDF

    transistor k 3562

    Abstract: transistor Bf 966 mosfet bf 966 BF966 LM 3558 G28 marking code sot 23 B1412-1 transistor G28 G28 SOT-23 SOT-23 marking BF
    Text: TELEFUNKEN ELECTRONIC ¥ilLilFO*lKl electronic 61C D • S^Dmb '7s 3 / -2 - S T ' 00052b2 0 BIAL66 BF 966 Creative Technologies { i N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications; Input- and Mixerstages especially for UHF-tuners


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    00052b2 IAL66 ft-11 569-GS 000S154 HAL66 if-11 transistor k 3562 transistor Bf 966 mosfet bf 966 BF966 LM 3558 G28 marking code sot 23 B1412-1 transistor G28 G28 SOT-23 SOT-23 marking BF PDF

    transistor Bf 966

    Abstract: LM 3558 transistor k 3562 B1412-1 G28 marking code sot 23 BF966 mosfet bf 966 G28 SOT-23 transistor G28 k 3561 MOSFET
    Text: TELEFUNKEN ELECTRONIC ¥ ilL ilF O *lK l electronic 61C D • S^Dmb '7 s 3 / - 2 - S T ' 00052b2 0 BIAL66 BF 9 6 6 Creative Technologies { i N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications; Input- and Mixerstages especially for UHF-tuners


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    00052b2 IAL66 ft-11 569-GS 000s154 hal66 if-11 transistor Bf 966 LM 3558 transistor k 3562 B1412-1 G28 marking code sot 23 BF966 mosfet bf 966 G28 SOT-23 transistor G28 k 3561 MOSFET PDF

    BFY88

    Abstract: Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288
    Text: TELEFUNKEN ELECTRONIC m ilp y M IM electronic Ö1C D • fi^SOQRb 0005332 b 'T- BFY 88 Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: VHF amplifier stages, pre-stages In common emitter configuration Oscillating mixer stages in common base configuration


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    i200Rb D0DS332 ft-11 569-GS 000s154 hal66 if-11 BFY88 Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288 PDF

    Telefunken u 237

    Abstract: Telefunken u 267 U237B U237 U 237 BG Telefunken u 257 U237BG U257BG U247B U257B
    Text: TELEFUNKEN ELECTRONIC 61C D T T IU IF W K IM electronic CfMtwe Technologies • fi^EDQ^b 0004D55 3 ■ AL6G U 237 BG •U 247 BG U 257 BG •U 267 BG ' T - s a w s - o Monolithic Integrated Circuits App1lcatlon;To drive LED-displays with 5 or 10 diodes Features:


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    T-13-01 U237BGU247BG U257BGU267BG 10LED 0Q0403Q T-S3-I3-07 Driverfor20LED Telefunken u 237 Telefunken u 267 U237B U237 U 237 BG Telefunken u 257 U237BG U257BG U247B U257B PDF

    K180

    Abstract: telefunken m 85 kl T36N KL21
    Text: TELEFUNKEN ELECTRONIC fllC D • T-'ZOp-'/'P fl^SODRb QQObQflB S ■ AL6G T36N Typenrelhe/Type ränge T36N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values U d r m i U r r m Periodische Vorwärts-und Rückwärts-Spltzensperrspannung


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    telefunken em 800

    Abstract: Telefunken u 237 fll100
    Text: a^EOCHb DOD?ôbtî M • AL6G T czr 8000 •T czr so o i TnKLifFMtMKdKl electronic Creative Technologies Matchable Pairs-Emitter and Detector Construction: Emitter: GaAs-IR Emitting Diode Detector: Silicon NPN Epitaxial Planar Phototransistor 80?0 and XCZjf.aqjÇJ


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    00G7fi72 BIAL66 Q0D7fl73 8000-TCZT telefunken em 800 Telefunken u 237 fll100 PDF