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    BIPOLAR POWER TRANSISTOR DRIVER CIRCUIT Search Results

    BIPOLAR POWER TRANSISTOR DRIVER CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd
    D1U54T-M-2500-12-HB4C Murata Manufacturing Co Ltd 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR Visit Murata Manufacturing Co Ltd
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd

    BIPOLAR POWER TRANSISTOR DRIVER CIRCUIT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    b 595 transistor

    Abstract: transistor 5 Amp 700 volt MA4T24300 transistor b 595 MA4T24335
    Text: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistor MA4T243 Series MA4T243 Series Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor


    Original     		MA4T243 MA4T24300 b 595 transistor transistor 5 Amp 700 volt transistor b 595 MA4T24335 PDF

    tda 266

    Abstract: No abstract text available
    Text: ▼ T D A 8140 ITIILlFtyiKlKlK] e le c tr o n ic Creative Technologies _ DRIVER FOR HORIZONTAL DEFLECTION POWER TRANSISTOR Technology: Bipolar Features: o Controlled driving of the power transistor during turn on and


    OCR Scan     		16-pin 20A16 tda 266 PDF

    fairchild power bjt

    Abstract: fjp2160d fdc6551 cascode mosfet switching ESBC j2160 J2160D C 1008 y transistor input output bjt npn transistor
    Text: FJP2160D ESBCTM Rated NPN Silicon Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, HV Industrial Power Supplies • Motor Driver and Ignition Driver


    Original     		FJP2160D fairchild power bjt fdc6551 cascode mosfet switching ESBC j2160 J2160D C 1008 y transistor input output bjt npn transistor PDF

    smd transistor k 1540

    Abstract: 703 TRANSISTOR smd transistor 835 transister transister smd DRF1401 NPN medium power transistor in a smd SiGe POWER TRANSISTOR SMD transister smd transistor js
    Text: UHF POWER TRANSISTOR DRF1401 NPN SiGe RF TRANSISTOR The DRF1401 is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The DRF1401 can be used as a driver device or an output device, depending on the specific application.


    Original     		DRF1401 DRF1401 OT-223 900MHz 100nF 100pF smd transistor k 1540 703 TRANSISTOR smd transistor 835 transister transister smd NPN medium power transistor in a smd SiGe POWER TRANSISTOR SMD transister smd transistor js PDF

    DRF1601

    Abstract: smd transistor js UHF POWER TRANSISTOR NPN medium power transistor in a smd FR4 epoxy dielectric constant 4.2 power transistor SMD TRANSISTOR smd transistor 026 PL SOT223 UHF POWER
    Text: UHF POWER TRANSISTOR DRF1601 NPN SiGe RF TRANSISTOR The DRF1601 is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The DRF1601 can be used as a driver device or an output device, depending on the specific application.


    Original     		DRF1601 DRF1601 OT-223 900MHz 100nF 100pF smd transistor js UHF POWER TRANSISTOR NPN medium power transistor in a smd FR4 epoxy dielectric constant 4.2 power transistor SMD TRANSISTOR smd transistor 026 PL SOT223 UHF POWER PDF

    HMC326MS8G

    Abstract: amplifier TRANSISTOR 12 GHZ
    Text: HMC326MS8G MICROWAVE CORPORATION HBT DRIVER AMPLIFIER 3.0 - 4.5 GHz FEBRUARY 2001 1 V00.1200 Features General Description Psat Output Power: +26 dBm The HMC326MS8G is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor HBT MMIC driver amplifier which operates between


    Original     		HMC326MS8G HMC326MS8G amplifier TRANSISTOR 12 GHZ PDF

    DS3654

    Abstract: AP1684
    Text: A Product Line of Diodes Incorporated AP1684 AC/DC, HIGH PF, HIGH EFFICIENCY LED DRIVER CONTROLLER Description Pin Assignments The AP1684 is a high performance AC/DC power factor corrected LED driver controller which is driving high voltage bipolar transistor.


    Original     		AP1684 AP1684 GU10/E27 DS36547 DS3654 PDF

    DS3654

    Abstract: AP1684
    Text: A Product Line of Diodes Incorporated AP1684 AC/DC, HIGH PF, HIGH EFFICIENCY LED DRIVER CONTROLLER Description Pin Assignments The AP1684 is a high performance AC/DC power factor corrected LED driver controller which is driving high voltage bipolar transistor.


    Original     		AP1684 AP1684 DS36547 DS3654 PDF

    AP1684

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated AP1684 AC-DC, HIGH PF, HIGH EFFICIENCY LED DRIVER CONTROLLER Description Pin Assignments The AP1684 is a high performance AC-DC power factor corrected LED driver controller which is driving high voltage bipolar transistor.


    Original     		AP1684 AP1684 GU10/E27 DS36547 PDF

    Transistor B 1566

    Abstract: ic smd a 1712 smd transistor zl SMD l4 Transistor B 1566 Transistor SMD TRANSISTOR L6 smd transistor js RF transistor SOT-89 NPN medium power transistor in a smd transistor 1734
    Text: UHF POWER TRANSISTOR DRF1402F NPN SiGe RF TRANSISTOR SOT-89 The DRF1402F is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-89 SMD package. 4 The DRF1402F can be used as a driver device or an output device, depending on the specific application


    Original     		DRF1402F OT-89 DRF1402F OT-89 465MHz 100nF Transistor B 1566 ic smd a 1712 smd transistor zl SMD l4 Transistor B 1566 Transistor SMD TRANSISTOR L6 smd transistor js RF transistor SOT-89 NPN medium power transistor in a smd transistor 1734 PDF

    smd transistor zl

    Abstract: rf transistor mar 8 DRF1401 THN5601B
    Text: THN5601B NPN SiGe RF POWER TRANSISTOR The THN5601B is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The THN5601B can be used as a driver device or an output device, depending on the specific application.


    Original     		THN5601B THN5601B OT-223 900MHz Mar-22-2005 100nF 100pF smd transistor zl rf transistor mar 8 DRF1401 PDF

    Untitled

    Abstract: No abstract text available
    Text: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors MP4T243 Series V3.00 Features • Low Phase Noise Oscillator Transistor • 200 mW Driver Amplifier Transistor • Operation to 8 GHz • Available as Chip • Available in Hermetic Surface Mount Packages


    Original     		MP4T243 MP4T24300 MP4T24335 PDF

    XS 630 B

    Abstract: ic smd a 1712 THN5602F NPN medium power transistor in a smd CIRCUIT SCHEMATIC diagram Transistor B 1566
    Text: THN5602F SOT-89 NPN SiGe RF POWER TRANSISTOR The THN5602F is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor 4 encapsulated in a plastic SOT-89 SMD package. The THN5602F can be used as a driver device or an output device, depending on the specific application.


    Original     		THN5602F OT-89 THN5602F OT-89 465MHz 100nF XS 630 B ic smd a 1712 NPN medium power transistor in a smd CIRCUIT SCHEMATIC diagram Transistor B 1566 PDF

    16-2-472

    Abstract: 161-717 45650 Transistor S 40442 SMD IC MARKING GP marking am1 smd 25804 403 inductor coil smd RF NPN POWER TRANSISTOR C 10-12 GHZ hn6501
    Text: THN5601SF SOT-23F NPN SiGe RF POWER TRANSISTOR □ DESCRIPTION The THN5601SF is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-23F SMD package. The THN5601SF can be used as a driver device or an output device, depending on the specific application.


    Original     		THN5601SF OT-23F THN5601SF OT-23F 26dBm 900MHz IS21I 16-2-472 161-717 45650 Transistor S 40442 SMD IC MARKING GP marking am1 smd 25804 403 inductor coil smd RF NPN POWER TRANSISTOR C 10-12 GHZ hn6501 PDF

    NPN Transistor 10A 24V

    Abstract: hFE-100 transistor bu931 BU931 BU931L-T3P-T NPN Transistor 8A bu931g NPN power Transistor 10A 24V
    Text: UNISONIC TECHNOLOGIES CO., LTD BU931 NPN SILICON TRANSISTOR NPN POWER DARLINGTON „ FEATURES * High operating junction temperature * High voltage ignition coil driver * Very rugged bipolar technology „ INTERNAL SCHEMATIC DIAGRAM 1 TO-3P „ ORDERING INFORMATION


    Original     		BU931 BU931L-T3P-T BU931G-T3P-T QW-R214-012 NPN Transistor 10A 24V hFE-100 transistor bu931 BU931 BU931L-T3P-T NPN Transistor 8A bu931g NPN power Transistor 10A 24V PDF

    Untitled

    Abstract: No abstract text available
    Text: MA4T243 Series M/A-COM Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor Operation to 8 GHz Available as Chip Available in Hermetic Surface Mount Packages


    OCR Scan     		MA4T243 MA4T24300 PDF

    QE R 643

    Abstract: No abstract text available
    Text: M an A M P com pany Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors MA4T243 Series V3.00 Case Styles Features • • • • • Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor Operation to 8 GHz Available as Chip


    OCR Scan     		MA4T243 MA4T24300 MA4T24300 MA4T24335 QE R 643 PDF

    EXB841

    Abstract: IGBT driver EXB841 ups electrical symbols EXB840 ups circuit diagram using igbt IGBT gate driver welding EXB851 EXB850 welding machine diagram exb841 igbt driver
    Text: GATE-DRIVE HYBRIDS FOR IGBTs DESCRIPTION: FEATURES: H ie insulated gate bipolar transistor IGBT is increasingly being used in low-noise, high-performance power supplies, inverters, uninterruptible power supplies (UPS), and motor speed controls. • Fuji’s Hybrid 1C driver of IGBTs was


    OCR Scan     		10kHz 40kHz 2500VAC EXB850 EXB851 EXB851 EXB840 EXB841 IGBT driver EXB841 ups electrical symbols ups circuit diagram using igbt IGBT gate driver welding welding machine diagram exb841 igbt driver PDF

    Untitled

    Abstract: No abstract text available
    Text: GATE-DRIVE HYBRIDS FOR IGBTs DESCRIPTION: FEATURES: The insulated gate bipolar transistor IGBT is increasingly being used in low-noise, high-performance power supplies, inverters, uninterruptible power supplies (UPS), and motor speed controls. • Fuji’s Hybrid 1C driver of IGBTs was


    OCR Scan     		40kHz 2500VAC EXB850 EXB851 EXB840 EXB841 PDF

    bu941zp

    Abstract: automotive transistor coil ignition ignition coil npn power darlington 637 ZENER High voltage ignition coil driver BU941Z BU941ZPFI TO3 HEATSINK morocco Electronic package to218
    Text: BU941Z/BU941ZP BU941ZPFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ ■ VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES FULLY INSULATED PACKAGE U.L.


    Original     		BU941Z/BU941ZP BU941ZPFI O-218 ISOWATT218 bu941zp automotive transistor coil ignition ignition coil npn power darlington 637 ZENER High voltage ignition coil driver BU941Z BU941ZPFI TO3 HEATSINK morocco Electronic package to218 PDF

    rds035

    Abstract: rds035l03 MMST8598 fet MK10 SM6K2 2SK3065 RHU002N06 RK7002 equivalent bc847bc 2sd198
    Text: Standard Transistor Product Solutions www.rohm.co.uk www.rohm.co.uk Small signal type MOSFET RHU002N06 Medium Power Bipolar Transistors 0.5W-1.2W MPT3 Package Description CPT3 MPT3 Item Application Driver Low VCE (sat) High hFE High voltage SW High voltage-High speed SW


    Original     		RHU002N06 2SD2167 56to270 2SB1132 2SD1664 82to390 2SB1188 2SD1766 2SB1182 2SD1758 rds035 rds035l03 MMST8598 fet MK10 SM6K2 2SK3065 RHU002N06 RK7002 equivalent bc847bc 2sd198 PDF

    bu941zp

    Abstract: BU941Z BU941ZPFI T218
    Text: BU941Z/BU941ZP BU941ZPFI  HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ ■ VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES FULLY INSULATED PACKAGE U.L.


    Original     		BU941Z/BU941ZP BU941ZPFI O-218 ISOWATT218 bu941zp BU941Z BU941ZPFI T218 PDF

    BU931T

    Abstract: No abstract text available
    Text: BU931T HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON TRANSISTOR • ■ VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTION TEMPERATURE APPLICATIONS HIGH RUGGEDNESS ELECTRONIC IGNITIONS ■ 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS


    Original     		BU931T O-220 BU931T PDF

    HMC324MS8G

    Abstract: No abstract text available
    Text: HMC324MS8G MICROWAVE CORPORATION HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz V00.1200 FEBRUARY 2001 General Description P1dB Output Power: + 16 dBm The HMC324MS8G is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor HBT MMIC amplifier that contains two un-connected


    Original     		HMC324MS8G HMC324MS8G PDF