CM600HG-130H
Abstract: HVIGBT from Mitsubishi electric
Text: MITSUBISHI HVIGBT MODULES CM600HG-130H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM600HG-130H ● IC . 600 A ● VCES . 6500 V
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CM600HG-130H
CM600HG-130H
HVIGBT from Mitsubishi electric
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CM400E4G-130H
Abstract: cm400e2
Text: MITSUBISHI HVIGBT MODULES Revision: B Prepared by K.Kurachi Date I.Umezaki 24-Feb.-2009 CM400E4G-130H th 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400E4G-130H ● IC ………………………
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24-Feb
CM400E4G-130H
HVM-1049-B
CM400E4G-130H
cm400e2
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES Revision: B Prepared by K.Kurachi Date I.Umezaki 24-Feb.-2009 CM400E2G-130H HIGH POWER SWITCHING USE INSULATED TYPE th 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM400E2G-130H IC ………………………
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24-Feb
CM400E2G-130H
HVM-1048-B
000A/Â
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES CM600HG-130H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM600HG-130H ● IC . 600 A ● VCES . 6500 V
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CM600HG-130H
000A/Â
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES Revision: B Prepared by K.Kurachi Date I.Umezaki 24-Feb.-2009 CM400E2G-130H th 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400E2G-130H ● IC ………………………
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24-Feb
CM400E2G-130H
HVM-1048-B
000A/Â
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CM400HG130H
Abstract: No abstract text available
Text: CONFIDENTIAL Revision: A Prepared by K.Kurachi Approved by I.Umezaki Mar.-1-2011 MITSUBISHI HVIGBT MODULES CM400HG-130H HIGH POWER SWITCHING USE INSULATED TYPE rd 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules COMPANY PROPRIETARY
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CM400HG-130H
HVM-1045-A
CM400HG130H
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CM400HG-130H
Abstract: cm400hg-130 CM400HG130H cm400hg
Text: MITSUBISHI HVIGBT MODULES Prepared by K.Kurachi Approved by I.Umezaki Mar.-1-2011 Revision: A CM400HG-130H rd 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400HG-130H ●IC ……………………… 400 A
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CM400HG-130H
HVM-1045-A
CM400HG-130H
cm400hg-130
CM400HG130H
cm400hg
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CM600HG
Abstract: CM600HG-90H BIPOLAR TRANSISTOR HVIGBT from Mitsubishi electric CM600HG-90
Text: MITSUBISHI HVIGBT MODULES CM600HG-90H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM600HG-90H ● IC . 600 A ● VCES . 4500 V
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CM600HG-90H
CM600HG
CM600HG-90H
BIPOLAR TRANSISTOR
HVIGBT from Mitsubishi electric
CM600HG-90
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES CM600HG-90H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM600HG-90H ● IC . 600 A ● VCES . 4500 V
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CM600HG-90H
200A/Â
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D 400 F 6 F BIPOLAR TRANSISTOR
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES Revision: A Prepared by K.Kurachi Approved by I.Umezaki Mar.-1-2011 CM400HG-130H HIGH POWER SWITCHING USE INSULATED TYPE rd 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM400HG-130H IC ……………………… 400 A
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CM400HG-130H
HVM-1045-A
000A/Â
D 400 F 6 F BIPOLAR TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES CM400HG-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM400HG-66H ● IC . 400 A ● VCES . 3300 V
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CM400HG-66H
min200V,
800A/Â
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MITSUBISHI CM400HG-66H
Abstract: D 400 F 6 F BIPOLAR TRANSISTOR HVIGBT 525k CM400HG-66H hvigbt diode 3g124
Text: MITSUBISHI HVIGBT MODULES CM400HG-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM400HG-66H ● IC . 400 A ● VCES . 3300 V
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CM400HG-66H
MITSUBISHI CM400HG-66H
D 400 F 6 F BIPOLAR TRANSISTOR
HVIGBT
525k
CM400HG-66H
hvigbt diode
3g124
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES CM400HG-66H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400HG-66H ● IC . 400A ● VCES . 3300V
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CM400HG-66H
/-15V
200A/Â
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CM400HG-66H
Abstract: mitsubishi The label version
Text: MITSUBISHI HVIGBT MODULES CM400HG-66H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400HG-66H ● IC . 400A ● VCES . 3300V
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CM400HG-66H
/-15V
CM400HG-66H
mitsubishi The label version
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CM800DZB-34N
Abstract: 1000v bipolar transistor hvigbt diode
Text: MITSUBISHI HVIGBT MODULES CM800DZB-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM800DZB-34N ● IC . 800A ● VCES . 1700V
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CM800DZB-34N
CM800DZB-34N
1000v bipolar transistor
hvigbt diode
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES CM800DZB-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM800DZB-34N ● IC . 800A ● VCES . 1700V
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CM800DZB-34N
500A/Â
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BIPOLAR TRANSISTOR
Abstract: bipolar power transistor vce 600 volt ks53 KS534505
Text: POIiJEREX INC m Tfl n /m 1 E J ? 5 ^ 4 t 5 1 OOOEOEfl _ x Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 1S697 412) 925-7272 t p 3 3-^ D KS534505 S in C flB B ip o ld l" Transistor Module 50 Amperes/600 Volts Description Powerex Single Bipolar Transistor
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OCR Scan
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KS534505
1S697
Amperes/600
KS534505
72CJL
BIPOLAR TRANSISTOR
bipolar power transistor vce 600 volt
ks53
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SWITCHING TRANSISTOR 144
Abstract: CM1800HC-34N igbt transistor
Text: MITSUBISHI HVIGBT MODULES CM1800HC-34N 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1800HC-34N ● IC . 1800A ● VCES . 1700V
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CM1800HC-34N
/-15V
28K/kW
SWITCHING TRANSISTOR 144
CM1800HC-34N
igbt transistor
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TRANSISTOR A01
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES CM1800HC-34H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1800HC-34H ● IC . 1800A ● VCES . 1700V
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CM1800HC-34H
/-15V
13K/kW
TRANSISTOR A01
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CM1800HC-34H
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES CM1800HC-34H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1800HC-34H ● IC . 1800A ● VCES . 1700V
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CM1800HC-34H
/-15V
13K/kW
CM1800HC-34H
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mitsubishi CM800DZ-34H
Abstract: CM800DZ-34H mitsubishi inverter air conditioning
Text: MITSUBISHI HVIGBT MODULES CM800DZ-34H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800DZ-34H ● IC . 800A ● VCES . 1700V
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CM800DZ-34H
/-15V
20K/kW
34K/kW
mitsubishi CM800DZ-34H
CM800DZ-34H
mitsubishi inverter air conditioning
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BUL44D2
Abstract: 100 Amp current 1300 volt diode ballast 300 watt Motorola Bipolar Power Transistor Data MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Text: MOTOROLA Order this document by BUL44D2/D SEMICONDUCTOR TECHNICAL DATA BUL44D2 Designer's Data Sheet High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 2 AMPERES 700 VOLTS 50 WATTS Integrated Collector-Emitter Diode and Built-in Efficient
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BUL44D2/D*
BUL44D2/D
BUL44D2
100 Amp current 1300 volt diode
ballast 300 watt
Motorola Bipolar Power Transistor Data
MJE210
MPF930
MTP12N10
MTP8P10
MUR105
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES CM800HC-66H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800HC-66H ● IC . 800A ● VCES . 3300V
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CM800HC-66H
/-15V
600A/Â
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CM600DY-34H
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES CM600DY-34H HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM600DY-34H ● IC . 600A ● VCES . 1700V
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CM600DY-34H
CM600DY-34H
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