prom 32x8
Abstract: GDFP2-F16 82s123 philips GDIP1-T16 82s123 82S123/BEA TRANSISTORS 123A 82S23 S23B GDIP1T-16
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 82S23/S23A/S23B 82S123/123A/123B 256-bit TTL bipolar PROM 32x8 APPLICATIONS DESCRIPTION • Prototyping/volume production • Sequential controllers • Format conversion • Hardwired algorithms
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82S23/S23A/S23B
82S123/123A/123B
256-bit
82S23
82S123
500ns
prom 32x8
GDFP2-F16
82s123 philips
GDIP1-T16
82S123/BEA
TRANSISTORS 123A
S23B
GDIP1T-16
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82s141
Abstract: 82S141/BKA mux 8 to 1 timing 8 bit ttl mux 8 INPUT 4 OUTPUT MUX GDFP2-F24
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 512x8 82S141 • Microprogramming • Hardwired algorithms • Control store • Random logic • Code conversion FEATURES • Address access time: 90ns max
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512x8)
82S141
82S141
500ns
82S141/BKA
mux 8 to 1 timing
8 bit ttl mux
8 INPUT 4 OUTPUT MUX
GDFP2-F24
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prom 256x4 bit
Abstract: GDIP1-T16 82S129A/BEA 82S126A 82S129A GDFP2-F16 bipolar PROM 32 x 32 matrix
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 82S126A 82S129A 1K-bit TTL bipolar PROM 256x4 FEATURES DESCRIPTION • Address access time: 35ns max • Input loading: -150µA max • On-chip address decoding • Output options:
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82S126A
82S129A
256x4)
82S126A
82S129A
82S126A:
82S129A:
500ns
prom 256x4 bit
GDIP1-T16
82S129A/BEA
GDFP2-F16
bipolar PROM
32 x 32 matrix
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82S137
Abstract: 4 to 16 decoder for ttl circuit GDIP1-T18 bipolar PROM 1024X4 a2712 1024x4 prom
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 1024x4 82S137 FEATURES DESCRIPTION • Address access time: 70ns max • Input loading: -150µA max • On-chip address decoding • No separate fusing pins
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1024x4)
82S137
82S137
500ns
4 to 16 decoder for ttl circuit
GDIP1-T18
bipolar PROM
1024X4
a2712
1024x4 prom
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82S147B
Abstract: F0180 mux 8 to 1 timing
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 512x8 82S147B FEATURES DESCRIPTION • Address access time: 45ns max • Input loading: -150µA max • One chip enable input • On-chip address decoding
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512x8)
82S147B
82S147B
500ns
F0180
mux 8 to 1 timing
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74s* programming
Abstract: N82S16 prom 256x4 bit MCM10149 MCM7620 MCM7621 MCM7641C MCM7643C MCM7681C N82HS137
Text: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR M EM ORY CROSS REFERENCE BIPOLAR M EM O RY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIGNETICS T.l. SIGNETICS *10149 N82S130 N82S131
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MCM10149
MCM7620
N82S130
MCM7621
N82S131
MCM7643C
N82S137
N82HS137
MCM7641C
N82S141
74s* programming
N82S16
prom 256x4 bit
MCM10149
MCM7681C
N82HS137
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8 bit ttl mux
Abstract: 82HS321 82HS321A
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 32K-bit TTL bipolar PROM 4096 x 8 82HS321A FEATURES APPLICATIONS DESCRIPTION • Address access time: • Prototyping/volume production The 82HS321 is field programmable, which
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32K-bit
82HS321A
82HS321
-250nA
500ns
711Gfl2b
711002b
8 bit ttl mux
82HS321A
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GDFP2-F24
Abstract: 82HS321 82HS321A
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 32K-bit TTL bipolar PROM 4096 x 8 82HS321A FEATURES APPLICATIONS DESCRIPTION • Address access time: • Prototyping/volume production The 82HS321 is field programmable, which
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32K-bit
82HS321A
82HS321
-250nA
500ns
711Dfl2fa
711002b
GDFP2-F24
82HS321A
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mod 16 counter
Abstract: DM86S64 dm86s64cab m86s 7x9 decoder DM86S64CAB/N
Text: DM76S64/DM86S64 Bipolar PROMs N atio nal S em ico n d u cto r DM76S64/DM86S64 Bipolar Character Generator General Description th e ch aracter addresses "fa ll th ro u g h " the latch. And w h en the address latch co n tro l signal goes lo w , the The DM76S64/DM86S64 is a 64-character bipolar
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DM76S64/DM86S64
64-character
16-pin
DM76S64/
DM86S64
mod 16 counter
dm86s64cab
m86s
7x9 decoder
DM86S64CAB/N
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82S321
Abstract: N82S321 32-Kbit 750FL Signetics Generic I fusing procedure
Text: 82S321 Signetics 32K-Bit TTL Bipolar PROM Product Specification Bipolar Memory Products DESCRIPTION FEATURES The 82S321 is field programmable, which means that custom patterns are immediately available by following the Signetics Generic I fusing procedure.
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82S321
32K-Bit
82S321
750fl,
750i2
N82S321
32-Kbit
750FL
Signetics Generic I fusing procedure
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8x305
Abstract: BIPOLAR MEMORY
Text: Signetics 8X350-40 2K-Bit TTL Bipolar RAM 256 x 8 Military Bipolar Memory Products Product Specification PIN CONFIGURATION DESCRIPTION FEATURES The 8X350-40 bipolar RAM is designed principally as a working storage element in an 8X305 based system. Internal circuitry
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8X350-40
8X350-40
8X305
8X305,
8X350
8X37X
BIPOLAR MEMORY
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SIGNETICS prom
Abstract: No abstract text available
Text: 82S147B Signetics 4K-Bit TTL Bipolar PROM Military Bipolar Memory Products Product Specification DESCRIPTION FEATURES The 82S147B is field-programmable, which means that custom patterns are immediately available by following the Signetics Generic Ifusing procedure. The
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82S147B
82S147B
512x8)
SIGNETICS prom
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10P256
Abstract: PROM32 10P256F
Text: 10P256 256—Bit ECL Bipolar PROM Preliminary Specification Bipolar Memory Products DESCRIPTION FEATURES The 10P256 is field programmable, meaning that custom patterns are imme diately available by following the Signetics Generic IV Programming procedure. The
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10P256
10P256
256-Bit
PROM32
10P256F
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82S131
Abstract: GDFP2-F16 GDIP1-T16 82S130A 82S131A
Text: Product specification Philips Semiconductors Military Bipolar Memory Products 2K-bit TTL bipolar PROM 512 x 4 82S131A DESCRIPTION FEATURES The 82S130A and 82S131A are field-programmable, which means that custom patterns are immediately available by following the
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82S130A
82S131A
-150pA
82S130A:
82S131A:
270ft
82S131
GDFP2-F16
GDIP1-T16
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82S141/8708+prom
Abstract: No abstract text available
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 512 x 8 82S141 FEATURES • Microprogramming • Address access time: 90ns max • Hardwired algorithms • Input loading: -150jiA max • Control store
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82S141
-150jiA
82S141
1002b
711002b
82S141/8708+prom
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CQCC2-N28
Abstract: 82S181A 1024 x 4 prom GDIP1-T24
Text: Product specification Philips Semiconductors Military Bipolar Memory Products 82S181A 8K-bit TTL bipolar PROM 1024 x 8 DESCRIPTION FEATURES The 82S181A is field-programmable, which means that custom patterns are immediately available by following the Philips Generic I
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82S181A
82S181A
500ns
711Qfi2b
CQCC2-N28
1024 x 4 prom
GDIP1-T24
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CE0102
Abstract: 82S181 CQCC2-N28
Text: Product specification Philips Semiconductors Military Bipolar Memory Products 8K-bit TTL bipolar PROM 1024 x 8 82S181 DESCRIPTION FEATURES The 82S181 is field-programmable, which means that custom patterns are immediately available by following the Philips Generic I
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82S181
82S181
500ns
0Gfl5074
711002b
CE0102
CQCC2-N28
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GDIP1-T16
Abstract: GDFP2-F16 82S23 S23B 82s123 philips 82S123/BEA 82S123 82s123b PROM32 82S23A/BFA
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 82S23/S23A/S23B 82S123/123A/123B 256-bit TTL bipolar PROM 32 x 8 APPLICATIONS DESCRIPTION • Prototyping/volume production The 82S23 and 82S123 are field-programmable, which means that
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256-bit
82S23/S23A/S23B
82S123/123A/123B
82S23:
82S123
82S23
500ns
Auqust24.
GDIP1-T16
GDFP2-F16
S23B
82s123 philips
82S123/BEA
82s123b
PROM32
82S23A/BFA
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signetics PROM
Abstract: 82HS321A 82HS321B Signetics MUX
Text: 82HS321A/82HS321B Signetics 32K-Bit TTL Bipolar PROM 4096 X 8 Military Bipolar Memory Products DESCRIPTION The 82HS321 is field programmable, which means that custom patterns are immediately available by following the Signetics Generic II fusing procedure. The
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82HS321A/82HS321B
32K-Bit
82HS321
signetics PROM
82HS321A
82HS321B
Signetics MUX
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82HS195ABRA
Abstract: No abstract text available
Text: 82HS195A Signetics 16K-Bit TTL Bipolar PROM Military Bipolar Memory Products DESCRIPTION The 82HS195A is field programmable, which means that custom patterns are immediately available by following the Generic II fusing procedure. The Signetics 82HS195A supplied with all
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82HS195A
16K-Bit
82HS195A
82HS195ABRA
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82s291a
Abstract: No abstract text available
Text: Signetics 82S291A 16K-Bit TTL Bipolar PROM Military Bipolar Memory Products Product Specification APPLICATIONS DESCRIPTION FEATURES The 82S291A is field programmable, which means that custom patterns are immediately available by following the Signetics Generic II fusing procedure. The
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82S291A
16K-Bit
82S291A
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O2-A2
Abstract: f0035 82S137A GDIP1-T18
Text: Product specification Philips Semiconductors Military Bipolar Memory Products 4K-bit TTL bipolar PROM 1024 x 4 82S137A DESCRIPTION FEATURES The 82S137A is field-programmable, which means that custom patterns are immediately available by following the Philips Generic I
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82S137A
-150jiA
82S137A
600ft
500ns
7110fl5b
00flSÃ
O2-A2
f0035
GDIP1-T18
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SIGNETICS 82S141
Abstract: SIGNETICS prom ttl 512 IC TTL 4700 82S141/BJA 82S141
Text: Signetics 82S141 4K-Bit TTL Bipolar PROM Military Bipolar Memory Products Product Specification DESCRIPTION FEATURES APPLICATIONS The 82S141 is field programmable, which means that custom patterns are immediately available by following the Signetics Generic I fusing procedure. The
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82S141
82S141
1000ft
SIGNETICS 82S141
SIGNETICS prom ttl 512
IC TTL 4700
82S141/BJA
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N82S126
Abstract: 82S126 32 x 32 matrix prom 256x4 bit 82S129
Text: BIPOLAR MEMORY MAY 1982 1024-BIT BIPOLAR PROM 256x4 82S126 (O.C.)/82S129 (T.S.) DESCRIPTION FEATURES The 82S126 and 82S129 are field p ro g ra m mable, w hich means th a t cu sto m patterns
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1024-BIT
256x4)
82S126
/82S129
82S126
82S129
N82S126
32 x 32 matrix
prom 256x4 bit
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