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    BIPOLAR PROM PROGRAMMING SPECIFICATION Search Results

    BIPOLAR PROM PROGRAMMING SPECIFICATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    BIPOLAR PROM PROGRAMMING SPECIFICATION Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    10P256

    Abstract: PROM32 10P256F
    Text: 10P256 256—Bit ECL Bipolar PROM Preliminary Specification Bipolar Memory Products DESCRIPTION FEATURES The 10P256 is field programmable, meaning that custom patterns are imme­ diately available by following the Signetics Generic IV Programming procedure. The


    OCR Scan     		10P256 10P256 256-Bit PROM32 10P256F PDF

    27S291

    Abstract: 27s191 AM27LS191 Am27S
    Text: Am27S190/27Sl91/PS191/LS191 Am 27S290/27S291 /PS291 /LS291 16,384-Bit 2048x8 Bipolar PROM Piatinum-Silicide fuses guarantee high reliability, fast programming and exceptionally high programming yields (typ > 98%) Voltage and temperature compensated providing ex­


    OCR Scan     		Am27S190/27Sl91/PS191/LS191 27S290/27S291 /PS291 /LS291 384-Bit 2048x8) Am27S190/27S191/PS191/LS191 Am27S190/191 2048-words Am27PSXXX 27S291 27s191 AM27LS191 Am27S PDF

    Untitled

    Abstract: No abstract text available
    Text: 10P016 16 K—Bit ECL Bipolar PROM Objective Specification Bipolar Memory Products PIN CONFIGURATION DESCRIPTION FEATURES The 10P016 is field programmable, meaning that custom patterns are imme­ diately available by following the Signetics Generic IV Programming procedure. The


    OCR Scan     		10P016 10P016 57fiW/blt 16K-Bit PDF

    AM27S29A/BRA

    Abstract: No abstract text available
    Text: ADV MICRO IME 0 I 0257550 0007753 3 | MEMORY a Am27S29/Am27S29A/Am27S29SA Advanced Micro Devices 4,096-Bit 512x8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • High Speed Highly reliable, ultra-fast programming Platinum-Silicide fuses • High programming yield


    OCR Scan     		Am27S29/Am27S29A/Am27S29SA 096-Bit 512x8) Am27S29 512-words TC003442 TC003452 KS000010 AM27S29A/BRA PDF

    VXXXX

    Abstract: No abstract text available
    Text: Am27S55 32,768-Bit 4 0 9 6 x 8 Bipolar Registered PROM ADVANCE INFORMATION User-programmable for Asynchronous Enable, Synchro­ nous Enable, Asynchronous Initialize, or Synchronous Initialize Platinum-Silicide fuses guarantee high reliability, fast programming, and exceptionally high programming


    OCR Scan     		Am27S55 768-Bit 24-pin, 300-mil WF021750 WF021760 VXXXX PDF

    27S33

    Abstract: AM27S33 AM27S33A AM27S32 Am27S32/27S33
    Text: Am27S32/27S33 Am27S32/27S33 4,096-Bit 1024x4 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • • High speed Highly reliable,ultra-fast programming Platinum-Silicide fuses High programming yield • Low-current PNP inputs • High-current open-collector and three-state outputs


    OCR Scan     		Am27S32/27S33 096-Bit 1024x4) 1024-words Am27S32 Am27S33 MIL-STD-883, 27S33 AM27S33A PDF

    27s21

    Abstract: No abstract text available
    Text: Am27S20/21 Am27S20/21 1,024-Bit 256 x 4 Bipolar PROM DISTINCTIVE CHARACTERISTICS • High speed Highly reliable, ultra-fast programming Platinum-Silicide fuses High programming yield • Low-current PNP inputs • High-current open-collector and three-stat


    OCR Scan     		Am27S20/21 024-Bit Am27S20 Am27S21 WF021170 MIL-STD-883, 27s21 PDF

    27S20

    Abstract: AM27S20 Am2910
    Text: Am27S20/21 Am27S20/21 1,024-Bit 256 x 4 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • • High speed Highly reliable, ultra-fast fuses High programming yield e Low-current PNP inputs programming Platinum-Silicide• High-current open-collectorand three-state outputs


    OCR Scan     		Am27S20/21 024-Bit Am27S20 Am27S21 MIL-STD-883, 27S20 Am2910 PDF

    am27s19

    Abstract: am27s18 27S19SA
    Text: Am27S18/19 256-Bit 32 x 8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • • Ultra high speed Highly reliable, ultra-fast programming Platlnum-Silicide fuses High-programming yield • • • Low-current PNP inputs High-current open collector and three-state outputs


    OCR Scan     		Am27S18/19 256-Bit 32-words Am27S18 Am27S19 MIL-STD-883, 27S19SA PDF

    AM27S29

    Abstract: 512x8 PROM AM27S29/BRA AM27S29A AM27S29SA AMD PROM Selector guide
    Text: a Am27S29/Am27S29A/Am27S29SA Adva^ 4,096-Bit 512x8 Bipolar PROM Devices DISTINCTIVE CHARACTERISTICS • • High Speed Highly reliable, ultra-last programming Platinum-Silicide fuses • High programming yield • Low-current PNP inputs • High-current open-collector and three-state outputs


    OCR Scan     		Am27S29/Am27S29A/Am27S29SA 096-Bit 512x8) Am27S29 512-words TC003452 WF021240 512x8 PROM AM27S29/BRA AM27S29A AM27S29SA AMD PROM Selector guide PDF

    AM27S29

    Abstract: KS000010 AM27S29A AM27S29SA CERAMIC FLATPACK 20pin AM27S29PC am27s29bra
    Text: M^ 0 Am27S29/Am27S29A/Am27S29SA 4,096-Bit 512x8 Bipolar PROM Devices DISTINCTIVE CHARACTERISTICS • • • High Speed Highly reliable, ultra-fast programming Platinum-Silicide fuses High programming yield • • • Low-current PNP inputs High-current open-cotlector and three-state outputs


    OCR Scan     		Am27S29/Am27S29A/Am27S29SA 096-Bit 512x8) Am27S29 512-words KS000010 KS000010 AM27S29A AM27S29SA CERAMIC FLATPACK 20pin AM27S29PC am27s29bra PDF

    AMD Bipolar PROM programming

    Abstract: AMD Prom Device generic prom programming AMD PROMS
    Text: Guide to the Analysis of Programming Problems Advanced Micro Devices by A M D Bipolar M em ory Product Engineering INTRODUCTION Advanced Micro Devices' Generic Series of Programmable Read Only Memory PROM circuits have been designed to provide extremely high programming yields. Available pro­


    OCR Scan     		1N4744A AF000250 AMD Bipolar PROM programming AMD Prom Device generic prom programming AMD PROMS PDF

    AM27S13

    Abstract: 512 x 4 bipolar prom am27s13adc
    Text: Am27Sl2/13 Am27S12/13 2,048-Bit 512 x 4 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • • High speed Highly reliable, ultra-fast programming Platinum-Silicide fuses High programming yield • • • Low-current PNP inputs High-current open-collector and three-state outputs


    OCR Scan     		Am27Sl2/13 048-Bit Am27S12/13 27Sl2/13 Am27Sl2 MIL-STD-883, AM27S13 512 x 4 bipolar prom am27s13adc PDF

    27s29

    Abstract: AM27S29APC am27s28
    Text: Am27S28/27S29 Am27S28/27S29 4,096-Bit 5 1 2 x 8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • • High Speed Highly reliable, ultra-fast programming Platinum-Sillcide fuses High programming yield • • • Low-current PNP inputs High-current open-collector and three-state outputs


    OCR Scan     		Am27S28/27S29 096-Bit Am27S28/29 512-words Am27S28 Am27S29 MIL-STD-883, 27s29 AM27S29APC PDF

    dk qs

    Abstract: CLTO20
    Text: Am27S31 512 X 8 Bipolar PROM High Low High Fast • • • • programming yield current PNP inputs current and three-state outputs chip select GENERAL DESCRIPTION of satisfying the requirements of a variety of microprogrammable controls, mapping functions, code conversion,


    OCR Scan     		Am27S31 512-words MIL-STD-883, dk qs CLTO20 PDF

    kontron mpp

    Abstract: MPP-80
    Text: Am27LS18 • Am27LS19 Low -Pow er Schottky 256-Bit Generic Series Bipolar PROM DISTINCTIVE CHARACTERISTICS FUNCTIONAL DESCRIPTION • High Speed - 55ns max commercial range access time • Excellent performance over full MIL and commercial ranges • Highly reliable, ultra-fast programming PlatinumSilicide fuses


    OCR Scan     		Am27LS18 Am27LS19 256-Bit only27LS18LMB AM27LS19DM AM27LS19DMB AM27LS19FM AM27LS19FMB kontron mpp MPP-80 PDF

    7C261

    Abstract: 7c264
    Text: CY7C261 CY7C263/CY7C264 WÈP CYPRESS 8K x 8 Power-Switched and Reprogrammable PROM floating-gate technology and byte-wide in­ telligent programming algorithms. The CY7C261, CY7C263, and CY7C264 are plug-in replacements for bipolar de­ vices and offer the advantages of lower


    OCR Scan     		7C261) 300-mil 600-mil CY7C261 CY7C263/CY7C264 CY7C261, CY7C263, CY7C264 24-Lead 7C261 7c264 PDF

    Untitled

    Abstract: No abstract text available
    Text: Am27S28/27S29 Am27S28/27S29 4,096-Bit 5 1 2 x 8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • • High Speed • Low-current PNP inputs Highly reliable, ultra-fast programming Platmum-Silicide • High-current open-collector and three-stat fuses • Fast chip select


    OCR Scan     		Am27S28/27S29 096-Bit Am27S28/29 512-words Am27S28 Am27S29 MIL-STD-883, PDF

    semiconductor c243

    Abstract: CY7C243 CY7C244 C2431 c243 c2437 C2432 D4580
    Text: CY7C243 CY7C244 4K x 8 Reprogrammable PROM D Features The CY7C243 and CY7C244 are plugĆin replacements for bipolar devices and offer the advantages of lower power, superior performance and programming yield. The EPROM cell requires only 12.5V for the supervoltage and low current requireĆ


    Original     		CY7C243 CY7C244 CY7C243 CY7C244 semiconductor c243 C2431 c243 c2437 C2432 D4580 PDF

    Untitled

    Abstract: No abstract text available
    Text: WS57C49B MILITARY HIGH SPEED 8K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with Am27S49 and MB7144 Bipolar PROMs — 45 ns • Low Power Consumption Immune to Latch-Up • Fast Programming — Up to 200 mA • DESCSMD 5962-87515


    OCR Scan     		WS57C49B Am27S49 MB7144 S57C49B WS57C49B MIL-STD-883C PDF

    smd marking WS

    Abstract: No abstract text available
    Text: WS57C191B/291B MILITARY HIGH SPEED 2 K x 8 CMOS PROM/RPROM KEY FEATURES • • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs Ultra-Fast Access Time — 45 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA • Fast Programming


    OCR Scan     		WS57C191B/291B Am27S191/291 N82S191 WS57C191B/291B aD-883C MIL-STD-883C smd marking WS PDF

    Untitled

    Abstract: No abstract text available
    Text: WS57C49C PRELIMINARY HIGH SPEED 8K x 8 CMOS PROM/RPROM K E Y FEATURES • Ultra-Fast Access Time • Pin Compatible with Am27S49 and MB7144 Bipolar PROMs • Immune to Latch-UP — 35 ns • Low Power Consumption • Fast Programming • DESC SMD 5962-87515


    OCR Scan     		WS57C49C Am27S49 MB7144 57C49C MIL-STD-883C S57C49C-55J S57C49C-55S S57C49C S57C49C-55TM IL-STD-883C PDF

    Untitled

    Abstract: No abstract text available
    Text: WS57C191B/291B MILITARY HIGH SPEED 2 K x 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs • Ultra-Fast Access Time — 45 ns • Low Power Consumption • Immune to Latch-UP • Fast Programming — Up to 200 mA


    OCR Scan     		WS57C191B/291B Am27S191/291 N82S191 WS57C191 B/291 MIL-STD-883C WS57C291B-45TMB* PDF

    smd marking 25J

    Abstract: WS57C291C-45TI WS57C291C-35TMB MARKING 25J
    Text: WS57C191C/291C HIGH SPEED 2K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs — t ACC = 25 ns — t CS = 12 ns • Immune to Latch-UP • Low Power Consumption • Fast Programming


    Original     		WS57C191C/291C Am27S191/291 N82S191 WS57C191C/291C MIL-STD-883C WS57C291C WS57C291C-25S smd marking 25J WS57C291C-45TI WS57C291C-35TMB MARKING 25J PDF