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27S13APC
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Rochester Electronics LLC
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27S13APC - Programmable ROM 512 x 4-bit bipolar |
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TTC022
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Toshiba Electronic Devices & Storage Corporation
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini |
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TTC020
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Toshiba Electronic Devices & Storage Corporation
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NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini |
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2SA1213
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Toshiba Electronic Devices & Storage Corporation
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PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini |
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GT30J110SRA
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Toshiba Electronic Devices & Storage Corporation
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IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) |
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