BIPOLAR TRANSISTOR Search Results

BIPOLAR TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

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ES Components ES80257S BIPOLAR TRANSISTOR IN TO-257 PACKAGE ESC ES80257S Bipolar Transistor in TO-257 Package Bipolar Transistor in TO-257 Package
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BIPOLAR TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
sla 1003 Abstract: STA434A SLA4390 SLA4391 STA431A Sla5013 transistor C1505 SLA434 STA431 13002a Text: 2-3 Transistor Arrays & MOS FET Arrays 2-3-3 For Motor Drive •H-Bridge Number VCEO V Part No. IC(A) of Circuits VDSS(V) ±30 STA458C Chip ID(A) STA431A Bipolar 40 SIP10Pin Bipolar 40 SIP10Pin Bipolar 1000 SIP10Pin Bipolar 2000 SIP10Pin Bipolar 80 Bipolar	Original	STA458C STA431A STA434A STA457C SLA4310 SLA4340 SLA5007 SLA5018 SMA5103 SLA8001 sla 1003 SLA4390 SLA4391 Sla5013 transistor C1505 SLA434 STA431 13002a	PDF
POWER TRANSISTORS Abstract: No abstract text available Text: Back to Bipolar Power Transistors Back to Bipolar Power Transistors	Original		PDF
darlington Abstract: "Darlington Transistors" Darlington Transistors Transistors Text: Back to Bipolar Darlington Transistors Back to Bipolar Darlington Transistors	Original		PDF
Untitled Abstract: No abstract text available Text: Section S: Bipolar Transistors index Bipolar Trm isistor Index » . - Z [ n x	OCR Scan		PDF
sla 1003 Abstract: SLA5041 SLA4060 SLA5046 SLA4030 Text: Transistor Arrays & MOS FET Arrays 2-3 2-3-1 For Sink Drive •General Purpose Part No. STA312A STA303A Number of Circuits 3 SDC01 VCEO V IC(A) VDSS(V) Bipolar 300 SIP8Pin Bipolar 1000 SIP8Pin 50 2 Bipolar 1000 SMD16Pin 3 Bipolar 300 4 MOS 0.45 SIP10Pin 5	Original	SMD16Pin SIP10Pin SIP12Pin sla 1003 SLA5041 SLA4060 SLA5046 SLA4030	PDF
Untitled Abstract: No abstract text available Text: International pmia ^Rectifier_ IRGMC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	IRGMC40U MIL-S-1950G T0-254 S54S2	PDF
IRGAC50U Abstract: transistor G46 IGBT g48 ge 142 bt 34w Text: International Rectifier PD-9.726A IRGAC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	pd926a IRGAC50U 001flb5G IRGAC50U transistor G46 IGBT g48 ge 142 bt 34w	PDF
tip122 tip127 audio board Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920 Text: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents	Original	Power247TM, tip122 tip127 audio board BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920	PDF
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01	PDF
100-C Abstract: IRGMC30F 9714A Text: International ioR Rectifier PD-9.714A IRGMC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	IRGMC30F IRGMC30FD IRGMC30FU mil-s-19500 O-254 100-C IRGMC30F 9714A	PDF
GT30J124 Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram	PDF
Untitled Abstract: No abstract text available Text: International ! r]Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	IRGMC50F IRGMC50FD IRGMC50FU O-254 4fiSS45S MIL-S-19500	PDF
Untitled Abstract: No abstract text available Text: International S Rectifier PD-9.722A IRGAC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	IRGAC30U	PDF
IR 92 0151 Abstract: IRGAC40F IRGAC40 transistor g23 Text: International TOR PD-9.723A ]Rectifier IRGAC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	IRGAC40F IR 92 0151 IRGAC40 transistor g23	PDF

irc30ud Abstract: IRGMC30U Text: International Ira]Rectifier PD-9.715A IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	IRGMC30U IRGMC30UD IRGMC30UU MIL-S-19500 O-254 ir*c30ud IRGMC30U	PDF
til 31a Abstract: IRGMC40U Text: International ïor iRectifier PD-9.717A IRGMC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	IRGMC40U IRGMC40UD IRGMC40UU MIL-S-19500 O-254 til 31a IRGMC40U	PDF
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123	PDF
IRGAC50F Abstract: G37 IC J3060 transistor g35 ecs g41 IRGAC50 Text: International lü ] Rectifier PD-9.725A IRGAC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	IRGAC50F 40HFL60 S54S5 lflb43 SS452 lflb44 G37 IC J3060 transistor g35 ecs g41 IRGAC50	PDF
transistor 9721 Abstract: 9721 mosfet to3 Text: International S Rectifier PD-9.721 A IRGAC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	IRGAC30F DD10bl5 transistor 9721 9721 mosfet to3	PDF
IRGMC50F Abstract: IRGMC50FD IRGMC50FU 39AF Text: International S S Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	IRGMC50F IRGMC50FD IRGMC50FU MIL-S-19500 O-254 IRGMC50F IRGMC50FU 39AF	PDF
Untitled Abstract: No abstract text available Text: International pm a Hü Rectifier_ IRGMC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast™ IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	IRGMC50U O-254 IRGMC50UD IRGMC50UU G-105	PDF
high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz Abstract: Glossary of Microwave Transistor Terminology Text: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .	Original	5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz Glossary of Microwave Transistor Terminology	PDF
high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz Abstract: S11A1 Glossary of Microwave Transistor Terminology Text: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .	Original	5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz S11A1 Glossary of Microwave Transistor Terminology	PDF
Untitled Abstract: No abstract text available Text: International pd-9 a igR]Rectifier_ IRGMC30F INSULATED GATE BIPOLAR TRANSISTO R Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	IRGMC30F IRGMC30FD IRGMC30FU O-254 IL-S-19500	PDF

BIPOLAR TRANSISTOR Search Results

BIPOLAR TRANSISTOR Result Highlights (5)

BIPOLAR TRANSISTOR Price and Stock

ES Components ES80257S BIPOLAR TRANSISTOR IN TO-257 PACKAGE

BIPOLAR TRANSISTOR Datasheets Context Search

sla 1003

POWER TRANSISTORS

darlington

Untitled

sla 1003

Untitled

IRGAC50U

tip122 tip127 audio board

GT30F131

100-C

GT30J124

Untitled

Untitled

IR 92 0151

ir*c30ud

til 31a

GT30F124

IRGAC50F

transistor 9721

IRGMC50F

Untitled

high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

Untitled