BIPOLAR TRANSISTOR BARE DIE Search Results

BIPOLAR TRANSISTOR BARE DIE Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
GT30J110SRA	Toshiba Electronic Devices & Storage Corporation	IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N)
TLP5702H	Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L
TLP5705H	Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L

BIPOLAR TRANSISTOR BARE DIE Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MA05110-DIE Abstract: FE55-0005 Text: L-Band Voltage Controlled Oscillator 1.435 - 1.525 GHz Preliminary MA05110-DIE V 1P.00 Features • • • • • • OUTLINE DRAWING Single supply 3 volt operation High Power Output: 10 dBm into 50 ohms Integrated Varactor 10 dB buffer amplifier Low Phase Noise due to InGaP HBT process	Original	MA05110-DIE MA05110-DIE FE55-0005	PDF
FE55-0005 Abstract: MA05130-DIE Text: S-Band Voltage Controlled Oscillator 2.2 - 2.4 GHz V 1P.00 MA05130-DIE Preliminary Features • • • • • • OUTLINE DRAWING Single supply 3 volt operation High Power Output: 10 dBm into 50 ohms Integrated Varactor 10 dB buffer amplifier Low Phase Noise due to InGaP HBT process	Original	MA05130-DIE MA05130-DIE FE55-0005	PDF
n06hd Abstract: N Channel MOS FET 3 ghz International rectifier thyristor manual SOT953 Thyristor to220 N Channel MOS FET up to 5 ghz MOS FET SOT-223 ON st naming DC variable power center tap MOTOROLA TRANSISTOR TO-220 Text: TND310 ON Semiconductor Device Nomenclature Prepared by: Steve West ON Semiconductor http://onsemi.com REFERENCE MANUAL Whenever possible, ON Semiconductor uses the following numbering systems in the naming of their products. The ESD/TVS, small signal diode and transistor, and	Original	TND310 TND310/D n06hd N Channel MOS FET 3 ghz International rectifier thyristor manual SOT953 Thyristor to220 N Channel MOS FET up to 5 ghz MOS FET SOT-223 ON st naming DC variable power center tap MOTOROLA TRANSISTOR TO-220	PDF
Transistor C 1279 Abstract: 07AN001 BIPOLAR TRANSISTOR BARE die yig oscillator application note bipolar transistor ghz s-parameter 07MS001 SiGe POWER TRANSISTOR SiGe Semiconductor bipolar transistor s-parameter bipolar transistor 50 ghz s-parameter Text: LPT16ED 30 GHz SiGe Bipolar Transistor Final Applications Product Description The LPT16ED is a silicon germanium low phase noise, high frequency NPN transistor for oscillator applications up to 16GHz. Low phase noise oscillators up to 16 GHz VCO’s, DRO’s and YIG oscillators	Original	LPT16ED LPT16ED 16GHz. OC-192 OC-768 38-DST-01 Transistor C 1279 07AN001 BIPOLAR TRANSISTOR BARE die yig oscillator application note bipolar transistor ghz s-parameter 07MS001 SiGe POWER TRANSISTOR SiGe Semiconductor bipolar transistor s-parameter bipolar transistor 50 ghz s-parameter	PDF
ATC520L103KT16T Abstract: MARKING HBT GSA612-12 Text: GSA612-12 InGaP HBT Gain Block Product Features ● DC to 12GHz ● +12 dBm P-1dB at 2GHz ● +27 dBm OIP3 at 2GHz ● 12 dB Gain at 2GHz ● 5.5 dB Noise Figure ● Internally-Matched to 50 Ω ● Unique 0805 Lead–Free/green package ● Available as bare die	Original	GSA612-12 12GHz GSA612-12 12GHz ATC520L103KT16T MARKING HBT	PDF
ATC520L103KT16T Abstract: Amplifier SOT-89 c4 GSA804-89 s parameters 4ghz ATC520L103KT16 Text: GSA804-89 InGaP HBT Gain Block Product Features ● 0.01 to 4GHz ● +20 dBm P-1dB at 2GHz ● +40 dBm OIP3 at 2GHz ● 12 dB Gain at 2GHz ● 4.5 dB Noise Figure ● Internally-Matched to 50 Ω ● SOT-89 Lead–Free/green package ● Available as bare die	Original	GSA804-89 OT-89 GSA804-89 ATC520L103KT16T Amplifier SOT-89 c4 s parameters 4ghz ATC520L103KT16	PDF
GSA804-12 Abstract: s parameters 4ghz 4ghz s parameters transistor 4ghz transistor n ATC520L103KT16 Text: GSA804-12 InGaP HBT Gain Block Product Features ● 0.01 to 4GHz ● +20 dBm P-1dB at 2GHz ● +40 dBm OIP3 at 2GHz ● 12 dB Gain at 2GHz ● 4.5 dB Noise Figure ● Internally-Matched to 50 Ω ● 0805 Lead–Free/green package ● Available as bare die	Original	GSA804-12 GSA804-12 s parameters 4ghz 4ghz s parameters transistor 4ghz transistor n ATC520L103KT16	PDF
GSA603-12 Abstract: GSA-603-12 gsa603 Text: GSA603-12 InGaP HBT Gain Block Product Features ● DC to 3.5GHz ● +16 dBm P-1dB at 2GHz ● +28 dBm OIP3 at 2GHz ● 18 dB Gain at 2GHz ● 3.8 dB Noise Figure ● Internally-Matched to 50 Ω ● Unique 0805 Lead–Free/green package ● Available as bare die	Original	GSA603-12 GSA603-12 GSA-603-12 gsa603	PDF
Untitled Abstract: No abstract text available Text: Effects of Deposition Method of PECVD Silicon Nitride as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA [email protected] Thin silicon nitride Si3N4 films deposited using plasma-enhanced	Original	300oC,	PDF
ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology Abstract: No abstract text available Text: ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA [email protected] Hafnium dioxide HfO2 and aluminum oxide (Al2O3) films have	Original	01AC09 ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology	PDF
Infineon technology roadmap for mosfet Abstract: germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor Text: Small CHIPS for big visions Silicon Discretes www.infineon.com Never stop thinking. INTRODUCTION O n e o f t h e w o r l d ' s major manufacturers of radio frequency RF components, Infineon Technologies is committed to innovative technologies and products, flexible service and the very best supply conditions for customers and partners.	Original	B191-H7496-G1-X-7600 Infineon technology roadmap for mosfet germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor	PDF
ATC520L103KT16T Abstract: bipolar transistor ghz s-parameter GSA-603 RF Transistor s-parameter GSA603-00 Transistor s-parameter at 2GHz bipolar transistor s-parameter RF Transistor s-parameter at 4GHz 4ghz s parameters transistor BCS-802JLC Text: GSA603-00 InGaP HBT Gain Block DIE Product Features Product Description ● 0.01MHz to 4 GHz The GSA603-00 is a 50 Ohm matched General Purpose Gain Block Amplifier that covers the 0.01MHz to 4GHz frequency range with 18dB nominal gain at 2GHz. ● +16 dBm P-1dB at 2GHz	Original	GSA603-00 01MHz GSA603-00 100um ATC520L103KT16T bipolar transistor ghz s-parameter GSA-603 RF Transistor s-parameter Transistor s-parameter at 2GHz bipolar transistor s-parameter RF Transistor s-parameter at 4GHz 4ghz s parameters transistor BCS-802JLC	PDF
ATC520L103KT16 Abstract: GSA606 ATC520L103KT16T GSA606-00 bipolar transistor ghz s-parameter Text: GSA606-00 InGaP HBT Gain Block DIE Product Features Product Description ● 0.01 to 7GHz The GSA606-00 is a 50 Ohm matched General Purpose Gain Block Amplifier that covers the 0.01MHz to 6GHz frequency range with 15dB nominal gain at 2GHz. ● +15.7dBm P-1dB at 2GHz	Original	GSA606-00 GSA606-00 01MHz 28dBm 100UM ATC520L103KT16 GSA606 ATC520L103KT16T bipolar transistor ghz s-parameter	PDF
RF TRANSISTOR 2GHZ Abstract: ATC520L103KT16T RF Transistor s-parameter Text: GSA804-00 InGaP HBT Gain Block DIE Product Features ● 0.01 to 4GHz ● +20 dBm P-1dB at 2GHz ● +40 dBm OIP3 at 2GHz ● 12 dB Gain at 2GHz ● 4.5 dB Noise Figure ● Internally-Matched to 50 Ω Product Description The GSA804-00 is a 50 Ohm matched General Purpose Gain Block Amplifier that	Original	GSA804-00 GSA804-00 140UM. 100um RF TRANSISTOR 2GHZ ATC520L103KT16T RF Transistor s-parameter	PDF

ATC520L103KT16T Abstract: ATC520L103KT16 HBT transistor RF TRANSISTOR 2GHZ BIPOLAR TRANSISTOR BARE die bipolar transistor ghz s-parameter Text: GSA612-00 InGaP HBT Gain Block DIE Product Features Product Description ● 0.01 MHz to 12GHz The GSA612-00 is a 50 Ohm matched General Purpose Gain Block Amplifier that covers the 0.01MHz to 12GHz frequency range with 12dB nominal gain at 2GHz. ● +12 dBm P-1dB at 2GHz	Original	GSA612-00 12GHz GSA612-00 01MHz 12GHz 100UM ATC520L103KT16T ATC520L103KT16 HBT transistor RF TRANSISTOR 2GHZ BIPOLAR TRANSISTOR BARE die bipolar transistor ghz s-parameter	PDF
Untitled Abstract: No abstract text available Text: General Cable’s broad line of VFD Industrial Cable solutions is tested and certified on both a regional and global level. In addition to the cable constructions below, we are designing, engineering and manufacturing custom cables to meet unique requirements every day.	Original		PDF
HEXFET Power MOSFET designer manual Abstract: MOSFET designer manual BJT Gate Drive circuit POWER BJTs BJT with i-v characteristics BJT characteristics N-Channel jfet 200V depletion P-Channel Depletion Mosfet HEXFET Power MOSFET Designers Manual n channel silicon mosfet Text: Index Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different	Original		PDF
HEXFET Power MOSFET designer manual Abstract: MOSFET designer manual HEXFET Power MOSFET Designers Manual N-Channel jfet 100V depletion P-Channel Depletion Mosfets BJT with i-v characteristics BJT Gate Drive circuit BJT with V-I characteristics TRANSISTORS BJT with low gate voltage Low Capacitance bjt Text: Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different	Original		PDF
AD544LH Abstract: ad542jh AD542 bifet Wien Bridge Oscillator jfet AD547 uv flame sensor AD544 AD642 AD644 Text: a FEATURES Ultralow Drift: 1 ␮V/؇C AD547L Low Offset Voltage: 0.25 mV (AD547L) Low Input Bias Currents: 25 pA max Low Quiescent Current: 1.5 mA Low Noise: 2 ␮V p-p High Open Loop Gain: 110 dB High Slew Rate: 13 V/␮s Fast Settling to ؎0.01%: 3 ␮s	Original	AD547L) MIL-STD-883B AD642, AD644, AD647 AD542/AD544/AD547 H-08A) C826c AD544LH ad542jh AD542 bifet Wien Bridge Oscillator jfet AD547 uv flame sensor AD544 AD642 AD644	PDF
AD544 Abstract: AD547 Wien Bridge Oscillator jfet Wien Bridge Oscillator jfet circuit uv flame sensor AD542 AD642 AD644 AD647 AD7541 Text: a High Performance, BiFET Operational Amplifiers AD542/AD544/AD547 FEATURES Ultralow Drift: 1 ␮V/؇C AD547L Low Offset Voltage: 0.25 mV (AD547L) Low Input Bias Currents: 25 pA max Low Quiescent Current: 1.5 mA Low Noise: 2 ␮V p-p High Open Loop Gain: 110 dB	Original	AD542/AD544/AD547 AD547L) MIL-STD-883B AD642, AD644, AD647 H-08A) C826c AD544 AD547 Wien Bridge Oscillator jfet Wien Bridge Oscillator jfet circuit uv flame sensor AD542 AD642 AD644 AD647 AD7541	PDF
philips rf manual Abstract: jedec JESD625-a Philips varicap tef6860 TEF6860HL philips catv 860 amplifier ic small signal transistor philips manual rf push pull mosfet power amplifier TEA5767 TEF6901H Text: RF 매뉴얼 6차 개정 RF 제품에 대한 애플리케이션 및 디자인 매뉴얼 2005년 5월 Henk Roelofs 부사장 겸 사업부장 RF 제품부 개 요 본 RF 매뉴얼은 RF 시스템에 대한 광범위한 각종 자료와 다양한 측면을 망라하였습니다. 본 문서에서는 RF 소 小 신호 개별 부품 (Small signal	Original		PDF
AN-1084 Abstract: Power MOSFET Basics HEXFET Power MOSFET designer manual HEXFET Power MOSFET Designers Manual BJT with i-v characteristics MOSFET designer manual N-Channel jfet 100V depletion N-Channel jfet 500V depletion n channel depletion MOSFET AN10841 Text: Application Note AN-1084 Power MOSFET Basics by Vrej Barkhordarian, International Rectifier Table of Contents Page Breakdown Voltage .5	Original	AN-1084 AN-1084 Power MOSFET Basics HEXFET Power MOSFET designer manual HEXFET Power MOSFET Designers Manual BJT with i-v characteristics MOSFET designer manual N-Channel jfet 100V depletion N-Channel jfet 500V depletion n channel depletion MOSFET AN10841	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MMDJ3N03BJT/D SEMICONDUCTOR TECHNICAL DATA P lastic Power Transistors M M DJ3N03BJT SO-8 for Surface Mount Applications M otorola Preferred Device • Collector -Emitter Sustaining Voltage — V c e O s u s = 30 Vdc (Min) @ lc = 10 mAdc	OCR Scan	MMDJ3N03BJT/D DJ3N03BJT	PDF
AD705 Abstract: a07-06 AD704SE ad706 AD704KN Text: ANALOG DEVICES □ FEATURES HIGH DC PRECISION Low Offset V oltage 75 nV max: AD704 (35 11V max: AD705) (50 nV max: AD706) Low O ffset D rift (1.0 n V /°C max: AD704) (0.6 n V /°C max: AD705) (0.6 (iV /°C max: AD706) Low Input Bias Currents (150 pA max: AD704)	OCR Scan	AD704/AD705/AD706 AD704) AD705) AD706) AD705 a07-06 AD704SE ad706 AD704KN	PDF

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BIPOLAR TRANSISTOR BARE DIE Search Results

BIPOLAR TRANSISTOR BARE DIE Result Highlights (5)

BIPOLAR TRANSISTOR BARE DIE Datasheets Context Search

MA05110-DIE

FE55-0005

n06hd

Transistor C 1279

ATC520L103KT16T

ATC520L103KT16T

GSA804-12

GSA603-12

Untitled

ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology

Infineon technology roadmap for mosfet

ATC520L103KT16T

ATC520L103KT16

RF TRANSISTOR 2GHZ

ATC520L103KT16T

Untitled

HEXFET Power MOSFET designer manual

HEXFET Power MOSFET designer manual

AD544LH

AD544

philips rf manual

AN-1084

Untitled

AD705