Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E D • 7^4142 KMM5361000A/AG Q014Sh4 SfiS « S M G K DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 5361000A is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung KM M 5361000A consist of eight CMOS 1 M X 4 bit
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OCR Scan
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KMM5361000A/AG
Q014Sh4
361000A
bitsX36
20-pin
72-pin
361000A-
130ns
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b 4E D • 7T b 4142 G a m b a s KMM5362000A1/A1G 41b ■ SMGK DRAM MODULES 2M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5362000A1 is a 2M bitsX36 Dynamic RAM high density memory module. The Samsung
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OCR Scan
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KMM5362000A1/A1G
KMM5362000A1
bitsX36
20-pin
72-pin
130ns
150ns
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PDF
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Untitled
Abstract: No abstract text available
Text: b7E i> S A MS UN G E L E C T R O N I C S INC 7^4142 KMM536256W/WG 0015 20 b Ô2Ô • DRAM MODULES 256Kx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM536256W is a 256K bitsx36 Dynamic RAM high density memory module. The Samsung
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OCR Scan
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KMM536256W/WG
256Kx36
KMM536256W
bitsx36
256Kx18
40-pin
72-pin
KMM536256W-6
110ns
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PDF
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KMM5361000
Abstract: KMM5361000/A
Text: SAMSUNG ELECTRONICS INC 42E ]> • T ^ b M m s GülGSlb Ô KMM5361000 DRAM MODULES 'T - % iï~ n 1 M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5361000 is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung
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OCR Scan
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KMM5361000
KMM5361000
bitsX36
20-pin
72-pin
150ns
KMM5361000-10
KMM5361000-
KMM5361000/A
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM5362000A/AG DRAM MODULES 2M X36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KMM5362000A is a 2M bitsX36 Dynamic RAM high density memory module. The Samsung K M M 5362000A consist of sixteen CMOS 1M X 4 bit DRAMs in 20-pin SOJ package and eight CMOS 1M X 1
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OCR Scan
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KMM5362000A/AG
KMM5362000A
bitsX36
362000A
20-pin
72-pin
362000A-
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PDF
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KMM5361000
Abstract: "soj 26" dram 80 ns G392
Text: KMM536100QA/AG/A1 /A1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5361 OOOA is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung KMM5361 OOOA consist of eight CMOS 1MX4 bit
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OCR Scan
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KMM536100QA/AG/A1
KMM5361
bitsX36
20-pin
72-pin
KMM5361000
"soj 26" dram 80 ns
G392
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM5362000A/AG/A1 /A1G DRAM MODULES 2 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 5362000A is a 2M bitsX36 Dynamic RAM high density memory module. The Samsung K M M 5362000A consist of sixteen CMOS 1 M X 4 bit
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OCR Scan
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KMM5362000A/AG/A1
362000A
bitsX36
20-pin
72-pin
130ns
362000A-
150ns
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PDF
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Untitled
Abstract: No abstract text available
Text: DftAM MODULES KMM5362000A 2 M X 3 6 DRAM S IM M Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 5362000A is a 2M bitsX36 Dynamic RAM high density memory module. The Samsung K M M 5362000A consist of sixteen CMOS 1 M X 4 bit DRAMs in 20-pin SOJ package and eight CMOS 1M X 1
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OCR Scan
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KMM5362000A
362000A
bitsX36
20-pin
72-pin
22piF
362000A-
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E T> WM T T b m M E KMM5361OOOBV/BVG 0015122 GTT • SMGK DRAM MODULES 1Mx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KMM5361000BV is a 1M bitsx36 Dynamic RA M high density memory module. The Samsung
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OCR Scan
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KMM5361OOOBV/BVG
1Mx36
KMM5361000BV
bitsx36
20-pin
72-pin
KMM5361000BV-7
130ns
5361OOOBV-8
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PDF
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KMM536100
Abstract: KMM5361000A7
Text: KMM5361000A/AG DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 5361000A is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung KM M 5361000A consist of eight CMOS 1 M X 4 bit DRAMs in 20-pin SOJ package and four CMOS 1 M X 1
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OCR Scan
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KMM5361000A/AG
361000A
bitsX36
20-pin
22fjF
KMM5361OOOA
361000A-
10OOA-
KMM536100
KMM5361000A7
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PDF
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Untitled
Abstract: No abstract text available
Text: b?E D S A M S UN G E L E C T R O N I C S INC • TThMlME 00132=12 BIM ■ S M G K KMM5328000V/VG/VP DRAM MODULES 8Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tRAC • • • • • • • tcAC tRC KMM5328000V-6 60ns
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OCR Scan
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KMM5328000V/VG/VP
8Mx32
KMM5328000V-6
110ns
130ns
KMM5328000V-8
KMM5328000V-7
KMM5328000V
bitsx36
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PDF
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KMM5368100-6
Abstract: KMM5368100-8 KMM5368100-7
Text: SAMSUNG ELECTRONICS INC b7E D WÊ 7 T b m 4 S KMM5368100/G OOISETÖ ÖDE BiSflSK DRAM MODULES 8M x36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: KMM5368100-6 • • • • • • • tfiAC tCAC tRC 60ns 15ns 110ns KMM5368100-7
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OCR Scan
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KMM5368100/G
KMM5368100-6
KMM5368100-7
KMM5368100-8
110ns
130ns
150ns
KMM5368100
bitsx36
KMM536B100
KMM5368100-8
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC t.7E D • 7^1 4 1 4 2 DQlSQSfl 3 m I KMM536512CH SMGK DRAM MODULES 512Kx36 DRAM SIMM Memory Module This SIMM is the x36 built on x40 board FEATURES GENERAL DESCRIPTION • Performance range: KMM536512CH-6 • • • • • •
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OCR Scan
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KMM536512CH
512Kx36
KMM536512CH-6
110ns
KMM536512CH-7
130ns
KMM536512CH-8
KMM536512CH
bitsx36
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E j> m Tibmns KMM5364000B/BG o d i s i ö s sb4 • s m g k DRAM MODULES 4 M x 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • tR A C tC A C t f lC KMM5364000B-6 60ns 15ns
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OCR Scan
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KMM5364000B/BG
KMM5364000B-6
110ns
KMM5364000B-7
130ns
KMM5364000B-8
150ns
cycles/16ms
KMM5364000B
bitsx36
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PDF
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