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    BJS SOT23 Search Results

    BJS SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL28114SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL28113SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation

    BJS SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking 724G

    Abstract: specifications of scr rating package marking 724g 724G marking 3FW sot-23 specifications of scr diode vx marking sot23-6 SOT23-6 Marking .64 SP724 diode array
    Text: Silicon Protection Arrays SCR Diode Array for ESD and Transient Overvoltage Protection Pb RoHS GREEN SP724 Lead-Free/Green Series Description  


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    PDF SP724 SP724 OT-23 OT23-6 180mm EIA-481 marking 724G specifications of scr rating package marking 724g 724G marking 3FW sot-23 specifications of scr diode vx marking sot23-6 SOT23-6 Marking .64 diode array

    vx marking sot23-6

    Abstract: No abstract text available
    Text: Silicon Protection Arrays SCR Diode Array for ESD and Transient Overvoltage Protection Pb RoHS GREEN SP724 Lead-Free/Green Series Description  


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    PDF SP724 SP724 OT-23 OT23-6 180mm EIA-481 vx marking sot23-6

    Untitled

    Abstract: No abstract text available
    Text: SIDACtor Protection Thyristors Broadband Optimized Protection SDP Biased Series - SOT23-6 RoHS Description 5IJTOFX4%1#JBTFETFSJFTQSPWJEFTPWFSWPMUBHF QSPUFDUJPOGPSBQQMJDBUJPOTTVDIBT7%4- "%4-  BOE"%4- XJUINJOJNBMFGGFDUPOEBUBTJHOBMT5IJT


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    PDF OT23-6 30MHz) 100nA 180mm OT-23 EIA-481

    Q62702-C1478

    Abstract: C1890 ic c1891 datasheet Q62702-C1482 Q62702-C1554 Q62702-C1556 Q62702-C1585 Q62702-C1586 Q62702-C1654 Q62702-C1890
    Text: PNP Silicon AF Transistors ● ● ● ● ● BCW 61 BCX 71 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 60, BCX 70 NPN Type Marking Ordering Code


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    PDF Q62702-C452 Q62702-C1585 Q62702-C1478 Q62702-C1556 Q62702-C1890 Q62702-C1891 Q62702-C1482 Q62702-C1586 Q62702-C1554 Q62702-C1654 Q62702-C1478 C1890 ic c1891 datasheet Q62702-C1482 Q62702-C1554 Q62702-C1556 Q62702-C1585 Q62702-C1586 Q62702-C1654 Q62702-C1890

    marking tp sot23-6

    Abstract: MARKING 53 SOT23-6 SOT23-6 MARKING DIODE V38 marking DIODE sot23-6 js marking SOT23-6 Marking TM SP3050 Marking c9 SOT23-6 A2 marking diode esd diode sot23-6
    Text: SPA TVS Diode Array Products Low Capacitance Diode Array for ESD and Surge Protection SP3050 SERIES RoHS Pb GREEN The SP3050 integrates low capacitance rail-to-rail diodes with an additional zener diode to protect each I/O pin against ESD and high surge events. This robust device can


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    PDF SP3050 5/50ns) 4NBMM405QBDLBHJOH SP3050-04HTG OT23-6 OT-23 180mm EIA-481 marking tp sot23-6 MARKING 53 SOT23-6 SOT23-6 MARKING DIODE V38 marking DIODE sot23-6 js marking SOT23-6 Marking TM Marking c9 SOT23-6 A2 marking diode esd diode sot23-6

    DIODE sot23-6 js marking

    Abstract: SP3050-04HTG SP3050 esd diode sot23-6 20 sot23-6 esd marking tp sot23-6 sot23 6 device Marking
    Text: SPA Silicon Protection Array Products Low Capacitance Diode Array for ESD and Surge Protection RoHS Pb SP3050 Lead-Free/Green Series GREEN Description The SP3050 integrates low capacitance rail-to-rail diodes with an additional zener diode to protect each I/O pin


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    PDF SP3050 IEC61000-4-5 8/20s) IEC61000-4-2. 5/50ns) OT23-6 180mm OT-23 EIA-481 DIODE sot23-6 js marking SP3050-04HTG esd diode sot23-6 20 sot23-6 esd marking tp sot23-6 sot23 6 device Marking

    BCW61FF

    Abstract: BCs sot23
    Text: BCW 61, BCX 71 PNP Silicon AF Transistor • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW 60, BCX 70 NPN 2 1 Type Marking


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    PDF OT-23 120Hz BCW61FF BCs sot23

    BCX71

    Abstract: marking BJs SOT23 BCW60 BCW61 BCW61FF BCX70 61FN
    Text: BCW61, BCX71 PNP Silicon AF Transistor  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BCW60, BCX70 NPN 2 1 Type Marking Pin Configuration


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    PDF BCW61, BCX71 BCW60, BCX70 71KRS 120Hz 61/BCX EHP00356 EHP00357 BCX71 marking BJs SOT23 BCW60 BCW61 BCW61FF BCX70 61FN

    71 SOT-23

    Abstract: No abstract text available
    Text: BCW 61, BCX 71 PNP Silicon AF Transistor  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BCW 60, BCX 70 NPN 2 1 Type Marking Pin Configuration


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    PDF OT-23 61/BCX 71 SOT-23

    BCW61

    Abstract: BCX71 BCs sot23 marking BJs SOT23 sot23 transistor marking 12E 61FN BJs SOT23 BKs SOT23 BCW60 BCW61FF
    Text: BCW61, BCX71 PNP Silicon AF Transistor  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BCW60, BCX70 NPN 2 1 Type Marking Pin Configuration


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    PDF BCW61, BCX71 BCW60, BCX70 120Hz 61/BCX EHP00356 EHP00357 10kHz BCW61 BCX71 BCs sot23 marking BJs SOT23 sot23 transistor marking 12E 61FN BJs SOT23 BKs SOT23 BCW60 BCW61FF

    bcx71

    Abstract: No abstract text available
    Text: BCW61, BCX71 PNP Silicon AF Transistor  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BCW60, BCX70 NPN 2 1 Type Marking Pin Configuration


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    PDF BCW61, BCX71 BCW60, BCX70 VPS05161 Apr-12-2002 bcx71

    BCX 71G E6327

    Abstract: BKs SOT23 sot23 transistor marking 12E BNS 180 BHS SOT23
    Text: BCW61, BCX71 PNP Silicon AF Transistor  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BCW60, BCX70 NPN 2 1 Type Marking Pin Configuration


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    PDF BCW61, BCX71 BCW60, BCX70 VPS05161 Apr-12-2002 BCX 71G E6327 BKs SOT23 sot23 transistor marking 12E BNS 180 BHS SOT23

    BCW60

    Abstract: BCW61 BCW61A BCW61B BCW61C BCW61D BCX70 BCX71 BCX71G BCX71H
    Text: BCW61., BCX71. PNP Silicon AF Transistors • For AF input stages and driver applications 2 3 • High current gain 1 • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW60, BCX70 NPN • Pb-free (RoHS compliant) package 1)


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    PDF BCW61. BCX71. BCW60, BCX70 BCW61A BCW61B BCW61C BCW61D BCX71G BCX71H BCW60 BCW61 BCW61A BCW61B BCW61C BCW61D BCX70 BCX71 BCX71G BCX71H

    Untitled

    Abstract: No abstract text available
    Text: BCW61., BCX71. PNP Silicon AF Transistors • For AF input stages and driver applications 2 3 • High current gain 1 • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW60, BCX70 NPN • Pb-free (RoHS compliant) package


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    PDF BCW61. BCX71. BCW60, BCX70 BCW61A BCW61B BCW61C BCW61D BCX71G BCX71H

    MMBD2104

    Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
    Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a


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    PDF BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932

    MMBD2103

    Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


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    PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N

    CTLS5064

    Abstract: SCR PNPN scr SOT-23 sfz 450 CTLS5064-M532 CTLS5064R-M532 CTLS5064R-M532M TLM532 SOT-23 IP
    Text: Cental _S ] iH lia l nductor c< CTLS5064-M532 CTLS5064R-M532 fifMIH TLM532 K W H J S M T 3.1mm x 2.1mm x 1.0mm (BJS) 2 3 1 CTLS5064-M532 2 3 CTLS5064R-M532 • V DRM = 400V . SOT-23 • • SOT-223 & £ '> 86% o mmtt sot-2 23 • 44% „ (Halogen Free) i£i+°


    OCR Scan
    PDF TLM532 CTLS5064-M532 CTLS5064R-M532 tlm532 CTLS5064R-M532 OT-23 OT-223 CTLS5064 SCR PNPN scr SOT-23 sfz 450 CTLS5064R-M532M SOT-23 IP

    marking BJG sot-23

    Abstract: MMBF5484LT1 wire wound IR source MARKING YG SOT-23
    Text: MOTOROLA Order this document by MMBF5484LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Transistor N-Channel 2 SOURCE M M B F 5 48 4L T 1 Motorola Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit VDG 25 Vdc v GS r 25 Vdc Forward Gate Current 'G(f) 10 mAdc


    OCR Scan
    PDF MMBF5484LT1/D OT-23 O-236AB) MMBF5484LT1 marking BJG sot-23 wire wound IR source MARKING YG SOT-23

    C1554

    Abstract: BKs sot-23 SIEMENS BJS marking BJs
    Text: SIEMENS PNP Silicon AF Transistors BCW 61 BCX 71 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW 60, BCX 70 NPN Type Marking


    OCR Scan
    PDF 62702-C452 62702-C1585 62702-C1478 Q62702-C1556 Q62702-C1890 Q62702-C1891 Q62702-C1482 62702-C1586 62702-C1554 62702-C1654 C1554 BKs sot-23 SIEMENS BJS marking BJs

    BCW61A

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon AF Transistors BCW 61 BCX 71 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW 60, BCX 70 NPN Type Marking


    OCR Scan
    PDF Q62702-C452 Q62702-C1585 Q62702-C1478 Q62702-C1556 Q62702-C1890 Q62702-C1891 62702-C1482 Q62702-C1586 Q62702-C1554 Q62702-C1654 BCW61A

    BCX70

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon AF Transistors BCW 60 BCX 70 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW 61, BCX 71 PNP Type Marking


    OCR Scan
    PDF Q62702-C1517 Q62702-C1497 Q62702-C1476 Q62702-C1477 Q62702-C1529 Q62702-C1567 Q62702-C1539 Q62702-C1481 Q62702-C1552 Q62702-C1571 BCX70

    Untitled

    Abstract: No abstract text available
    Text: RF MICRO-DEVICES RF2362 PCS CDMA/TDMA 3 V PA DRIVER AM PLIFIER Typ ical A p plications • TDMA/CDMA/FM PCS Tx Am plifier General Purpose Amplification • Low Noise Transmit Driver Am plifier Commercial and Consum er Systems • 2.4 GHz WLAN Systems Product D escription


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    PDF RF2362

    Untitled

    Abstract: No abstract text available
    Text: RF2361 R F MICRO-DEVICES 3 V LOW NOISE AM PLIFIER/ 3 V PA DRIVER AM PLIFIER T y p ic a l A p p lic a tio n s • TDMA/CDMA/FM Cellular PCS LNA • General Purpose Amplification • Low Noise Transmit Driver Am plifier • Commercial and Consum er Systems P r o d u c t D e s c r ip tio n


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    PDF RF2361 RF2361

    MMBF5486LT1

    Abstract: 318C8 marking gfg 6f
    Text: MOTOROLA Order this document by MMBF5486LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Transistor N-Channel 2 SOURCE MMBF5486LT1 M o to ro la P re fe rre d D e vic e MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Symbol


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    PDF MMBF5486LT1/D MMBF5486LT1 OT-23 O-236AB) MMBF5486LT1 318C8 marking gfg 6f