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    BJT 522 Search Results

    BJT 522 Result Highlights (1)

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    OPA2863DGKEVM Texas Instruments Evaluation module for OPA2863 very low-power BJT-input, wide-supply range, RRIO high-speed op amp Visit Texas Instruments

    BJT 522 Datasheets Context Search

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    HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design

    Abstract: No abstract text available
    Text: RMO1D-1 HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design Tzung-Yin Lee and Yuh-Yue Chen Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Abstract — This paper presents a methodology to characterize and model BJT’s mismatch behavior for RFIC


    Original     		PDF 40PA/Pm2 200PA/Pm2 HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design

    10358

    Abstract: bjt 522 4410 8936 diode equivalent 2SD1757K
    Text: SPICE PARAMETER 2SD1757K by ROHM TR Div. * Q2SD1757K NPN BJT model * Date: 2006/12/12 .MODEL Q2SD1757K NPN + IS=200.00E-15 + BF=276.12 + VAF=76.825 + IKF=1.8049 + ISE=200.00E-15 + NE=1.8936 + BR=103.58 + VAR=100 + IKR=.15279 + ISC=3.5422E-12 + NC=1.4410 + RE=.1


    Original     		PDF 2SD1757K Q2SD1757K 00E-15 5422E-12 00E-12 449E-12 72E-12 295E-9 10358 bjt 522 4410 8936 diode equivalent 2SD1757K

    Modeling of SOI FET for RF Switch Applications

    Abstract: No abstract text available
    Text: RTU2D-2 Modeling of SOI FET for RF Switch Applications Tzung-Yin Lee and Sunyoung Lee Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Abstract — This paper presents the modeling of an SOI FET for RF switch applications. Given that the HF smallsignal predictability, i.e. the insertion loss and the isolation, is


    Original     		PDF 12-stacked 12stacked Modeling of SOI FET for RF Switch Applications

    Large-signal Modeling of SiGe HBT for PA Applications

    Abstract: No abstract text available
    Text: IEEE BCTM 6.1 Large-signal Modeling of SiGe HBT for PA Applications Tzung-Yin Lee, Sunyoung Lee, Pete Zampardi, and Jongchan Kang Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617, USA maximizing the power added efficiency PAE . Recent emphasis for extended battery life in a metropolitan


    Original     		PDF

    2SC3583

    Abstract: kf 203 transistor BJT BF 167 marking 855 sot 353 2SC4227 2SC5007 2SC5012 NE681 NE68139 NE68118
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION


    Original     		PDF NE681 NE681 24-Hour 2SC3583 kf 203 transistor BJT BF 167 marking 855 sot 353 2SC4227 2SC5007 2SC5012 NE68139 NE68118

    kf 203 transistor

    Abstract: 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor NE681
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION


    Original     		PDF NE681 NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 kf 203 transistor 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor

    1820 0944

    Abstract: NE68135 ca 4558 NE68130 BJT BF 167 bjt 522 BJT IC Vce 2SC4227 2SC5007 NE681
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) s


    Original     		PDF NE681 NE681 1820 0944 NE68135 ca 4558 NE68130 BJT BF 167 bjt 522 BJT IC Vce 2SC4227 2SC5007

    kf 203 transistor

    Abstract: 682 MARKING SOT-23 NE AND micro-X transistor KF 507 2SC4227 2SC5007 2SC5012 NE681 NE68100 NE68118
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e E d w h o s l w PL


    Original     		PDF NE681 NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 NE68139-T1 kf 203 transistor 682 MARKING SOT-23 NE AND micro-X transistor KF 507 2SC4227 2SC5007 2SC5012 NE68100 NE68118

    NE68135

    Abstract: transistor npn d 2078 common emitter bjt transistor bf 494 NE68133-T1B-A mje 3009
    Text: SILICON TRANSISTOR NE681 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e E d w h o l w PL l as r e t o n o f a f r d e DESCRIPTION e o


    Original     		PDF NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 NE68139-T1 NE68139R-T1 transistor npn d 2078 common emitter bjt transistor bf 494 NE68133-T1B-A mje 3009

    AN1635

    Abstract: speedometer 7-segment display speedometer 20 pin radar gun LM311 MC33201 MC68HC11 MC68HC11E9 MC7805 lm311 OP-AMP
    Text: Freescale Semiconductor Application Note AN1635 Rev 2, 05/2005 Baseball Pitch Speedometer by: Carlos Miranda, Systems and Applications Engineer and David Heeley, Systems and Applications Mechanical Engineer INTRODUCTION The Baseball Pitch Speedometer, in its simplest form,


    Original     		PDF AN1635 AN1635 speedometer 7-segment display speedometer 20 pin radar gun LM311 MC33201 MC68HC11 MC68HC11E9 MC7805 lm311 OP-AMP

    transistor "micro-x" "marking" 102

    Abstract: laser drive ic 3656 4558 L IC 2030 PIN CONNECTIONS LB 1639 mje 3009
    Text: SILICON TRANSISTOR NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e


    Original     		PDF NE681 transistor "micro-x" "marking" 102 laser drive ic 3656 4558 L IC 2030 PIN CONNECTIONS LB 1639 mje 3009

    BJT characteristics

    Abstract: NE68135 NE AND micro-X 2SC4227 2SC5007 2SC5012 NE681 NE68100 NE68118 NE68119
    Text: SILICON TRANSISTOR NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e


    Original     		PDF NE681 BJT characteristics NE68135 NE AND micro-X 2SC4227 2SC5007 2SC5012 NE68100 NE68118 NE68119

    qualcomm msm 8660

    Abstract: ecu repair proton rx 4000 watts power amplifier circuit diagram preamplifier proton 1100 MOBILE jammer GSM 1800 MHZ circuit diagram Qualcomm 8200 proton rx 3000 RF2713 433MHz saw Based Transmitter Schematic and PCB La RF2517
    Text:                 1      2        3         4       5    6      7 ! " 8      #  9 !   


    Original     		PDF RF2043 RF2044 RF2045 RF2046 RF2047 RF2048 RF2103P org/jedec/download/std020 qualcomm msm 8660 ecu repair proton rx 4000 watts power amplifier circuit diagram preamplifier proton 1100 MOBILE jammer GSM 1800 MHZ circuit diagram Qualcomm 8200 proton rx 3000 RF2713 433MHz saw Based Transmitter Schematic and PCB La RF2517

    bjt differential amplifier application circuits

    Abstract: amplifier 900mhz direct pm modulation circuit SSB Modulator application note RF2424 SSOP-16
    Text: RF2424 UHF QUADRATURE MODULATOR Typical Applications • GSM and D-AMPS Systems • Digital Communications Systems • Spread Spectrum Communication Systems • AM, SSB, DSB Modulation • GMSK,QPSK,DQPSK,QAM Modulation • Image-Reject Upconverters 0.196


    Original     		PDF RF2424 SSOP-16 bjt differential amplifier application circuits amplifier 900mhz direct pm modulation circuit SSB Modulator application note RF2424 SSOP-16

    cadmium sulfide photoresistor

    Abstract: heat sensor with fan cooling using LM741 circuit diagram of incubator ACD0831 DC FAN CONTROLLED TEMPERATURE USING IC LM741 circuit diagram of pipe climbing robot hair dryer PID diagram incubator project book basic stamp program with adc0831 qrb1114
    Text: Process Control Student Guide VERSION 1.0 WARRANTY Parallax Inc. warrants its products against defects in materials and workmanship for a period of 90 days from receipt of product. If you discover a defect, Parallax Inc. will, at its option, repair or replace the merchandise, or refund the


    Original     		PDF ULN2003A cadmium sulfide photoresistor heat sensor with fan cooling using LM741 circuit diagram of incubator ACD0831 DC FAN CONTROLLED TEMPERATURE USING IC LM741 circuit diagram of pipe climbing robot hair dryer PID diagram incubator project book basic stamp program with adc0831 qrb1114

    100MHz SMD RF Mixer

    Abstract: J1400
    Text: RF2413                   • Digital and Spread Spectrum Systems • CDMA Systems • Analog Communication Systems • General Purpose Frequency Conversion • GSM Systems • Portable Battery Powered Equipment


    Original     		PDF RF2413 RF2413 100MHz 1000MHz. 100MHz SMD RF Mixer J1400

    LB 1639

    Abstract: transistor TT 3043
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: ft = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 00 CHIP


    OCR Scan     		PDF NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B LB 1639 transistor TT 3043

    Transistors BF 494

    Abstract: Transistor BJT 547 b transistor kf 469
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 00 CHIP 35 (MICRO-X) 18 (SOT 343 STYLE)


    OCR Scan     		PDF NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 Transistors BF 494 Transistor BJT 547 b transistor kf 469

    Untitled

    Abstract: No abstract text available
    Text: siliconsustatis SSI 32M593 Three-Phase Delta Motor Speed Controller INNOVATORS IN^INTEGRATION July, 1987 FEATURES DESCRIPTION The SSI 593 is a motor speed control 1C designed to provide all timing and control functions necessary to start, drive, and brake a 3 phase, 4 or 8 pole brushless


    OCR Scan     		PDF 32M593 32M593F-CL 32M593F-CP 32M593 32M593S-CL 32M593S-CP

    Star Delta Control circuit for 3 phase motor

    Abstract: delta motor star delta diagram motor functional block diagram for star delta conversion spindle motor speed hall effect sensor 32M593 Star Delta Control circuit for 3 phase motor for 12v DC MOTOR SPEED CONtrol ic AC Motor Speed Controller 32M593S-CL
    Text: SSI 32M593 mmâtshns' Three-Phase Delta Motor Speed Controller INNOVATORS IN^INTEGRATION July, 1987 FEATURES DESCRIPTION The SSI 593 is a motor speed control 1C designed to provide all timing and control functions necessary to start, drive, and brake a 3 phase, 4 or 8 pole brushless


    OCR Scan     		PDF SSI593 32M593 32M593F-CL 32M593F-CP 32M593S-CL 32M593S-CP 32M593S-CP Star Delta Control circuit for 3 phase motor delta motor star delta diagram motor functional block diagram for star delta conversion spindle motor speed hall effect sensor Star Delta Control circuit for 3 phase motor for 12v DC MOTOR SPEED CONtrol ic AC Motor Speed Controller

    Untitled

    Abstract: No abstract text available
    Text: RF2713 I MICRO-DEVICES QUADRATURE MODULATOR/DEMODULATOR T y p ic a l A p p lic a tio n s Spread-Spectrum Communication Systems • Digital and Analog Receivers and Interactive Cable Systems Transmitters • High Data Rate Digital Communications Portable Battery-Powered Equipment


    OCR Scan     		PDF RF2713 100kHz 250MHz, 28mVpp, 200mVpp,

    Untitled

    Abstract: No abstract text available
    Text: RF2454 MICRO-DEVICES VHF QUADRATURE M ODULATOR Typical Applications • Digital and Spread Spectrum Systems AM, SSB, DSB Modulation • GMSK, QPSK, DQPSK, QAM Modulation Image-Reject Upconverters • Private Mobile Radio Systems Product Description The RF2454 is a monolithic integrated universal modula­


    OCR Scan     		PDF RF2454 RF2454 load2454 2454410B F2454PCBA SOIC-14 RF2402 100pF MPSS100-3

    Untitled

    Abstract: No abstract text available
    Text: U FI i • V v f. f-i * ' .* ¡.Î - L 1 i + : MICRO DEVICES - . '. iT i. ■»-■ -h- “ ■■ ■4- mm r :" 1t.-t -i +, -M R F 2 4 1 3 GAIN CONTROLLED DUAL-CONVERSION QUADRATURE MODULATOR T y p ic a l A p p lic a t io n s • Digital and Spread Spectrum Systems


    OCR Scan     		PDF RF2413 TGG4131

    8 PIN SMD IC L02

    Abstract: DDD0553 RF2413 2 way rf splitter ic GC2A
    Text: MICRO-DEVICES G A IN C O N TR O LLE D D U A L-C O N VER SIO N Q U A D R A TU R E M O D U LA TO R T y p ic a l A p p lic a tio n s • Digital and Spread Spectrum Systems C DM A Systems • Analog Communication Systems General Purpose Frequency Conversion • G SM Systems


    OCR Scan     		PDF RF2413 RF2413 TDD4131 8 PIN SMD IC L02 DDD0553 2 way rf splitter ic GC2A