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    BJT MICROWAVE GHZ Search Results

    BJT MICROWAVE GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RX1214B300YI Rochester Electronics LLC RX1214B300Y - Microwave Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    ISL55016IRTZ-T7 Renesas Electronics Corporation MMIC Silicon Bipolar Differential Amplifier Visit Renesas Electronics Corporation
    ISL55014IEZ-T7 Renesas Electronics Corporation MMIC Silicon Bipolar Broadband Amplifier Visit Renesas Electronics Corporation
    ISL55012IEZ-EVAL Renesas Electronics Corporation MMIC Silicon Bipolar Broadband Amplifier Evaluation Board Visit Renesas Electronics Corporation
    ISL55015IEZ-T7 Renesas Electronics Corporation MMIC Silicon Bipolar Broadband Amplifier Visit Renesas Electronics Corporation

    BJT MICROWAVE GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    power BJT

    Abstract: HP8971C MMIC s-band monolithic amplifier MAR MONOLITHIC AMPLIFIERS GST-2 silicon bipolar transistor low noise amplifier amplifier lna low noise amplifier s-band TRANSISTOR noise figure measurements HP8970B
    Text: ASICs Application Note 644: Mar 17, 2000 QuickChip Design Example 2 Low Power Silicon BJT LNA for 1.9GHz 1998 IEEE. Reprinted, with permission, from 1998 IEEE Microwave and Guided Wave Letters, Vol. 3, No. 3, pp. 136-137 Abstract A two-stage 1.9GHz monolithic low-noise amplifier LNA with a measured noise figure of


    Original     		PDF -20dB, com/an644 power BJT HP8971C MMIC s-band monolithic amplifier MAR MONOLITHIC AMPLIFIERS GST-2 silicon bipolar transistor low noise amplifier amplifier lna low noise amplifier s-band TRANSISTOR noise figure measurements HP8970B

    varactor diode model in ADS

    Abstract: zo 607 transistor zo 607 ADS varactor diode yig oscillator hp working of colpitts oscillator common emitter bjt how to test Triode Thyristors applications of blocking oscillator triode
    Text: Advanced Design System 2001 Oscillator DesignGuide August 2001 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		PDF Index-31 varactor diode model in ADS zo 607 transistor zo 607 ADS varactor diode yig oscillator hp working of colpitts oscillator common emitter bjt how to test Triode Thyristors applications of blocking oscillator triode

    microwave transceiver

    Abstract: abstract for wireless communication system loop gain of Colpitts VCO design 5ghz microwave transceiver 3.5 GHz microwave transceiver sensitivity loop gain of Colpitts VCO design 4 ghz 0.18 um CMOS Spiral Inductor technology bjt microwave GHz Drive Base BJT 5.8 ghz Transceiver IC
    Text: The Impact of SiGe BiCMOS Technology on Microwave Circuits and Systems Mehmet Soyuer IBM T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598 E-mail: [email protected] Abstract This paper focuses on low power and high integration capabilities of SiGe BiCMOS


    Original     		PDF

    SIT Static Induction Transistor

    Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier
    Text: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are


    Original     		PDF AN1529/D AN1529 AN1529/D* SIT Static Induction Transistor create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier

    monolithic amplifier MAR 3 app note

    Abstract: HP8971C 3055 transistor bjt AN644 APP644 amplifier lna low noise amplifier s-band S-Band Power Amplifier intercept point MICROWAVE BJT 2GHZ
    Text: Maxim > App Notes > ASICs WIRELESS, RF, AND CABLE Keywords: Maxim, QuickChip, silicon bipolar, LNA, 1.9 GHz, QuickChip 9, semi-custom, ASIC, low noise amplifier, quick chip Mar 17, 2000 APPLICATION NOTE 644 QuickChip Design Example 2 Low Power Silicon BJT LNA for 1.9GHz


    Original     		PDF -20dB, com/an644 AN644, APP644, Appnote644, monolithic amplifier MAR 3 app note HP8971C 3055 transistor bjt AN644 APP644 amplifier lna low noise amplifier s-band S-Band Power Amplifier intercept point MICROWAVE BJT 2GHZ

    siliconix vmp4

    Abstract: irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet
    Text: Class-E RF Power Amplifiers Come learn about this highly efficient and widespread class of amplifiers. Here are principles of operation, improved design equations, optimization principles and experimental results. By Nathan O. Sokal, WA1HQC of Design Automation, Inc


    Original     		PDF 99CH36282C. KE67VWU, siliconix vmp4 irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet

    LNA ku-band

    Abstract: ku-band pll lnb AT-64020 microwave transmitter 10GHz MGA-725M4 micro-X ceramic Package lna fet gaas fet 70 mil micro-X Package HSMS-2850 HSCH-9401 900-1700MHz
    Text: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions Wireless Infrastructure 2 Basestation Radiocard 2 Basestation Low Noise Amplifier LNA 3 Basestation Tower Mounted Amplifier (TMA) 3 Basestation Multi-carrier Power Amplifier (MCPA)


    Original     		PDF 11a/b/g) 5988-9866EN LNA ku-band ku-band pll lnb AT-64020 microwave transmitter 10GHz MGA-725M4 micro-X ceramic Package lna fet gaas fet 70 mil micro-X Package HSMS-2850 HSCH-9401 900-1700MHz

    Tekelec Temex

    Abstract: Tekelec HP 8753 Tekelec diode WILTRON HP83620A
    Text: RF & MICROWAVE MODULES Introduction Introduction TEKELEC TEMEX designs, develops and manufactures standard and custom IF, RF and microwave modules for military and professional applications. TEKELEC TEMEX has the engineering ressources and production capacity of a large company, as well as the flexibility to rapidly deliver small quantities


    Original     		PDF 3620A 8510B 8515S Tekelec Temex Tekelec HP 8753 Tekelec diode WILTRON HP83620A

    NF NPN Silicon Power transistor TO-3

    Abstract: UPA800T bjt microwave 15 GHz npn bjt microwave GHz transistor mje 350 NE680 S21E UPA800T-T1 97 transistor
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA800T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 7.5 dB TYP at 2 GHz


    Original     		PDF UPA800T NE680 UPA800T 24-Hour NF NPN Silicon Power transistor TO-3 bjt microwave 15 GHz npn bjt microwave GHz transistor mje 350 S21E UPA800T-T1 97 transistor

    bjt npn m03

    Abstract: BR 123 m03 bjt npn 2SC5437 NE688 NE688M03 S21E
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M03 OUTLINE DIMENSIONS Units in mm FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz • LOW NOISE FIGURE: NF = 1.7 dB at 2 GHz 1.4±0.05 0.8±0.1 2 1.4 ±0.1 0.45 (0.9) TS • • PACKAGE OUTLINE M03


    Original     		PDF NE688M03 NE688M03 24-Hour bjt npn m03 BR 123 m03 bjt npn 2SC5437 NE688 S21E

    transistor bf 458

    Abstract: NE685 S21E UPA806T UPA806T-T1
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA806T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE685 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1


    Original     		PDF UPA806T NE685 UPA806T 24-Hour transistor bf 458 S21E UPA806T-T1

    2SC5437

    Abstract: NE688 NE688M03 S21E 15E14
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M03 OUTLINE DIMENSIONS Units in mm FEATURES • • HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz • LOW NOISE FIGURE: NF = 1.7 dB at 2 GHz 1.2±0.05 0.8±0.1 2 1.4 ±0.1 0.45 (0.9) TS • PACKAGE OUTLINE M03


    Original     		PDF NE688M03 NE688M03 2SC5437 NE688 S21E 15E14

    BJT with i-v characteristics

    Abstract: SSG TRANSISTOR 3362 motorola InP HBT transistor motorola 3362 SSG 23 TRANSISTOR ECG015 LL1608-F15NK MCH185A180JK MCH185A560JK
    Text: PRELIMINARY DATA SHEET ECG015 BROADBAND HIGH OIP3 AMPLIFIER 1800 - 2500 MHz Features Applications n n n n 1800 to 2500 MHz Highly Reliable InGaP HBT Excellent Stability Multi-carrier Systems n High Linearity Amplifiers n Cellular, PCS, WLL Package Available


    Original     		PDF ECG015 OT-89 ECG015 OT-89 SS-000145-000 BJT with i-v characteristics SSG TRANSISTOR 3362 motorola InP HBT transistor motorola 3362 SSG 23 TRANSISTOR LL1608-F15NK MCH185A180JK MCH185A560JK

    30 micro farad capacitor 6000 volt

    Abstract: HBT transistor j1 05075 ECG014 LL1608-F33NK MCH185A180JK MCH185A560JK 7953 scr 50kA ic 76660
    Text: PRELIMINARY DATA SHEET ECG014 BROADBAND HIGH OIP3 AMPLIFIER 50 - 2000 MHz Features Applications n n n n n n n 50 to 2000 MHz 42 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 20.5 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz Excellent Stability


    Original     		PDF ECG014 OT-89 ECG014 OT-89 SS-000122-000 30 micro farad capacitor 6000 volt HBT transistor j1 05075 LL1608-F33NK MCH185A180JK MCH185A560JK 7953 scr 50kA ic 76660

    NE68019

    Abstract: No abstract text available
    Text: NONLINEAR MODEL SCHEMATIC NE68019 Q1 Collector Base Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 3.84e-16 MJC BF 124.9 XCJC NF 1.05 CJS UNITS Parameter seconds 0.64 capacitance farads inductance henries resistance ohms volts amps


    Original     		PDF NE68019 84e-16 0e-14 01e-4 358e-12 162e-12 7e-12 635e-9 08e-12 NE68019

    bjt microwave GHz

    Abstract: NE68700 026E-12 bjt microwave 15 GHz 026E-9 60E-12 68700
    Text: NE68700 NONLINEAR MODEL SCHEMATIC Q1 CCB LB LC CCE LE BJT NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Parameters Q1 Parameters Q1 IS 8.0e-17 MJC 0.53 time Units seconds BF 128 XCJC 0.27 capacitance farads NF 1.0 CJS inductance henries VAF 17 VJS 0.75 resistance


    Original     		PDF NE68700 0e-17 3e-15 0e-12 0e-15 26e-12 19e-12 49e-9 70e-9 26e-9 bjt microwave GHz NE68700 026E-12 bjt microwave 15 GHz 026E-9 60E-12 68700

    bjt microwave GHz

    Abstract: BJT IC Vce 38E-16
    Text: NE68800 NONLINEAR MODEL SCHEMATIC Q1 CCB LB LC CCE LE BJT NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1 IS 3.8e-16 MJC 0.48 time seconds BF 135.7 XCJC 0.56 capacitance farads henries NF 1 CJS inductance VAF 28 VJS 0.75 resistance


    Original     		PDF NE68800 8e-16 8e-15 5e-16 796e-12 549e-12 0e-12 032e-9 24e-12 27e-12 bjt microwave GHz BJT IC Vce 38E-16

    Untitled

    Abstract: No abstract text available
    Text: NE68730 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE CBEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1 IS 8e-17 MJC 0.53 time seconds BF 128 XCJC 0.27 capacitance farads


    Original     		PDF NE68730 8e-17 3e-15 4e-15 415e-12 102e-12 6e-12 26e-12s 26e-12 19e-12

    NE85639

    Abstract: No abstract text available
    Text: NE85639 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LC LBX LCX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 6e-16 MJC 0.55 BF 120 XCJC 0.3 NF 0.98 CJS VAF 10 VJS 0.75 IKF 0.08 MJS ISE 3.2e-15


    Original     		PDF NE85639 6e-16 2e-15 96e-4 8e-12 1e-12 10e-12 NE85639 087e-12 16e-12

    Untitled

    Abstract: No abstract text available
    Text: NONLINEAR MODEL NE68818 SCHEMATIC CCBPKG CCB LCX LBX LB Collector LC CCE Base CCEPKG LE CBEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 3.8e-16 MJC 0.48 0.56 BF 135.7 XCJC NF 1 CJS VAF 28 VJS 0.75 IKF 0.6 MJS ISE 3.8e-15


    Original     		PDF NE68818 8e-16 8e-15 5e-16 796e-12 549e-12 11e-12 32e-12 5e-14 24e-12

    60E-12

    Abstract: 151E9
    Text: NE68718 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LC LBX LCX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 8.0e-17 MJC 0.53 BF 128 XCJC 0.27 NF 1.0 CJS VAF 17 VJS 0.75 IKF 0.18 MJS ISE 3.3e-15


    Original     		PDF NE68718 0e-17 3e-15 0e-15 415e-12 102e-12 0e-12 26e-12 19e-12 51e-9 60E-12 151E9

    BF166

    Abstract: rbm 1 NE851M13 PARAMETERS
    Text: NONLINEAR MODEL SCHEMATIC NE851M13 CCBPKG 0.05 pF CCB 0.01 pF LBPKG LB 0.05 nH 0.25 nH LCPKG 0.05 nH Collector Base CCE Q1 0.25 pF LE 0.45 nH CCEPKG 0.05 pF LEPKG 0.05 nH Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 137e-18 MJC


    Original     		PDF NE851M13 137e-18 4e-15 15e-12 532e-18 170e-15 4e-12 65e-12 BF166 rbm 1 NE851M13 PARAMETERS

    NE68135

    Abstract: No abstract text available
    Text: NONLINEAR MODEL SCHEMATIC NE68135 Q1 CCB_PKG 0.11pF 0.07pF LC 0.96 nH CCB RB_PKG LB_PKG LB 0.15nH 0.45nH RC_PKG COLLECTOR 0.1 ohms CCE 0.01pF BASE 0.1 ohms LC_PKG 0.15nH CCE_PKG 0.2pF LE_PKG 0.38nH CBE_PKG 0.05pF RE_PKG 0.1 ohms CBEX_PKG CCEX_PKG 0.2pF 0.1pF


    Original     		PDF NE68135 7e-16 77e-11 2e-12 8e-12 14e-12 24-Hour NE68135

    0066E

    Abstract: 014e1
    Text: NONLINEAR MODEL NE68518 SCHEMATIC Q1 CCBPKG CCB LCX LBX LB Collector LC Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 7e-16 MJC 0.34 BF 109 XCJC NF 1 CJS 0.75 Parameter time capacitance inductance resistance


    Original     		PDF NE68518 7e-16 9e-13 4e-12 18e-12 2e-12 NE68518 13e-12 14e-12 0066E 014e1