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    BLV25 Search Results

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    Advanced Semiconductor Inc BLV25

    RF Bipolar Transistors RF Transistor
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    Mouser Electronics BLV25
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    BLV25 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BLV25 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF
    BLV25 Philips Semiconductors VHF Power Transistor Original PDF
    BLV25 Philips Semiconductors VHF Power Transistor Original PDF
    BLV25 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BLV25 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    BLV25 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BLV25

    Abstract: No abstract text available
    Text: BLV25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 6L FLG A C The ASI BLV25 is a 28 V silicon NPN power transistor designed primarily for VHF FM broadcast transmitters. 1 2 2x Ø N FULL R D FEATURES: 3 • 28 V operation • PG = 10 dB at 175 W/108 MHz


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    PDF BLV25 BLV25

    BLV25

    Abstract: No abstract text available
    Text: BLV25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 6L FLG A C The ASI BLV25 is a 28 V silicon NPN power transistor designed primarily for VHF FM broadcast transmitters. 2 1 2x Ø N FU LL R D FEATURES: 4 3 • 28 V operation • PG = 1.0 dB at 175 W/108 MHz


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    PDF BLV25 BLV25

    TRIMMER cap no-2222 809 07015

    Abstract: 702 P TRANSISTOR BLV25 702 TRANSISTOR transistor Common Base configuration transistor w 04 59 VHF transmitter circuit rf transmitter* vhf philips blv25
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV25 VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification VHF power transistor BLV25 DESCRIPTION FEATURES N-P-N silicon planar epitaxial


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    PDF BLV25 SC08a TRIMMER cap no-2222 809 07015 702 P TRANSISTOR BLV25 702 TRANSISTOR transistor Common Base configuration transistor w 04 59 VHF transmitter circuit rf transmitter* vhf philips blv25

    Untitled

    Abstract: No abstract text available
    Text: Jbemi-donducto'i ^Products., Line. 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLV25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 6L FLG BLV25 is a 28 V silicon NPN power transistor designed primarily for


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    PDF BLV25 BLV25

    BLV25

    Abstract: 702 P TRANSISTOR br 2222 npn MGP303 MGP304
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV25 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor BLV25 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily for use in v.h.f.-f.m. broadcast transmitters.


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    PDF BLV25 BLV25 702 P TRANSISTOR br 2222 npn MGP303 MGP304

    Philips 4312 020

    Abstract: BLV25 Philips 2222 ferrite fxc3b fxc3b PHILIPS 4312 blw 64 rf transistor PHILIPS 4312 amplifier philips rf choke ferrite 151 schematic for 88 to 108 amplifier
    Text: APPLICATION NOTE Wideband 300 W push-pull FM amplifier using BLV25 transistors AN98031 Philips Semiconductors Wideband 300 W push-pull FM amplifier using BLV25 transistors CONTENTS 1 INTRODUCTION 2 AMPLIFIER DESIGN THEORY 2.1 2.2 2.3 The output network The input network


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    PDF BLV25 AN98031 BLV25 BLW86 SCA57 Philips 4312 020 Philips 2222 ferrite fxc3b fxc3b PHILIPS 4312 blw 64 rf transistor PHILIPS 4312 amplifier philips rf choke ferrite 151 schematic for 88 to 108 amplifier

    tp2304

    Abstract: TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
    Text: ASI Part Number AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 AM81214030 AM81214060 BLF147 BLF175 BLF177 BLF242 BLF244 BLF245 BLF246 BLF278 BLF368 BLU11/SL BLU15/12 BLU20/12 BLU30/12 BLU45/12


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    PDF AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 tp2304 TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit

    SOT123 Package

    Abstract: SOT123 SOT-123 BFS22A SOT121 Package BFQ43 BFQ43 datasheet BLY93 BLX15 bfq34 application note
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Power Transistors for HF and VHF 1995 Nov 21 File under Discrete Semiconductors, SC08a Philips Semiconductors RF Power Transistors for HF and VHF Selection guide INTRODUCTION The following tables represent our complete range of bipolar and MOS transmitting transistors, grouped according to the


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    PDF SC08a BLV10 OT123 BLY87C/01 SCD45 SOT123 Package SOT123 SOT-123 BFS22A SOT121 Package BFQ43 BFQ43 datasheet BLY93 BLX15 bfq34 application note

    BA101D

    Abstract: J04075 sars0 S0146 2N5529 2N6482 B40-12A SGSIF464 TIP542 acrian inc
    Text: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2SC3748 BOlllA BOlllA 2N5327 SFT6200 (A) 2N5328 SMl2168 BU100A ~~~~~-O5 25 30 SVT250-05 SVT250-05 SVT300-05 SVT300-05 SVT300-05 S01457 2S01443 2S01445 2SD~:5A 35 40 TIP543 TIP543 2N5940 2N5939 TIP542


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    PDF SGSIF464 SGSF464 SGSF564 BlW78 S01290 2N6093 2N5304 BOl13 SMl2171 BA101D J04075 sars0 S0146 2N5529 2N6482 B40-12A SGSIF464 TIP542 acrian inc

    BLV 730

    Abstract: COE82101 BLY90 BLW60 BLV25 BLW89 rf transformer philips india SC-10 amplifier Blw89 transistor blv 33 transistor
    Text: TECHNICAL PUBLICATION Considerations on efficiency of the RF power transistors in the different classes of operation COE82101 Philips Semiconductors Considerations on efficiency of the RF power transistors in the different classes of operation CONTENTS 1 SUMMARY


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    PDF COE82101 SCA57 BLV 730 COE82101 BLY90 BLW60 BLV25 BLW89 rf transformer philips india SC-10 amplifier Blw89 transistor blv 33 transistor

    TPV3100

    Abstract: TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A
    Text: TABLE OF CONTENTS INTRODUCTION iii GENERAL INFORMATION iv QUALITY ASSURANCE & RELIABILITY v PRODUCT INDEX Alphanumeric vi RF POWER TRANSISTORS ! ! ! ! ! ! ! ! ! ! ! HF SSB HF MOSFETS VHF VHF & UHF MOSFETS UHF UHF MILITARY PULSED AVIONICS PULSED RADAR CW MICROWAVE


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    PDF twF150-50F HF150-50S HF250-50 HF100-28 HF220-28 HF220-50 TVU014 HF75-50S ASAT25 ASI4003 TPV3100 TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A

    Philips TdA3619

    Abstract: on4408 tda3619 on4827 TDA5247HT on4785 OF622 FAST RECOVERY DIODE ON4913 on4802 OQ9811T
    Text: PRODUCT DISCONTINUATION DN43 NOTICE June 30, 2000 Exhibit A SEE DN43 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.


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    blv 33 transistor

    Abstract: BLV25 rf 2222 vp1020 multilayer
    Text: N AMER PHILIPS/DISCRE TE bTE » • bbS3<i31 ÜÜEflc Mcl l'il BLV25 I V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily for use in v.h.f.-f.m . broadcast transmitters. Features: • internally matched input for wideband operation and high power gain;


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    PDF BLV25 blv 33 transistor BLV25 rf 2222 vp1020 multilayer

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bTE bbS3^31 D0Efle 4cJ m BLV25 D IAPX V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily for use in v.h.f.-f.m. broadcast transmitters. Features: • internally matched input fo r wideband operation and high power gain;


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    PDF BLV25

    CM45-12A

    Abstract: 8M0B5 MHW252 CM80-28R BGY41B BFR65 2N6166 blw95 BLY94 MHW1342
    Text: RF Transistors for Broadcast Applications SGS-Thomson 55-108MHz Class C for FM Transmitters and Ctass AB for VHF-TV Band I Config. Package Type CE 2X.450SQ4LFL SD1476" CE 2X.450SQ4LFL SD1476 CE .5004LFL SD1457 CE .5004LFL SD1460 2X.450SQ4LFL CE SD1483 * In development, Class AB Icq = 2 X 400 mA


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    PDF 55-108MHz SD1476" 450SQ4LFL SD1476 SD1457 5004LFL SD1460 SD1483 CM45-12A 8M0B5 MHW252 CM80-28R BGY41B BFR65 2N6166 blw95 BLY94 MHW1342

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


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    PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    bf0262a

    Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
    Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A


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    PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94

    T119 A

    Abstract: sot 122 SOT123 Package BLW78
    Text: 63 RF/Microwave Devices Bipolar RF Transmitting Transistors SHF 900 - 960 MHz cont. Load Power (W) @ 900 MHz Power Gain (dB) @ 900 MHz Supply Voltage (V) 35* 50 50* 150(PEP)* 7* 8.5 8.1* 7.5* 24 26 26 26 Package Outline Load Power (W) @ 108 MHz Power Gain


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    PDF 4-26V BLV97CE BLV101A BLV101B BLV948 OT-171, OT-273, OT-262A2, 2N3866 T119 A sot 122 SOT123 Package BLW78

    RPY 86

    Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
    Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­


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    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


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    PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


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    PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    BLY32

    Abstract: blf278 108 amplifier Philips Application BLX15 RF Power Amplifiers bgy55 blw95 BLF543 BFQ43 BLW33 blf177 108 amplifier
    Text: 83 RF/Microwave Devices Video Amplifiers Video Amplifier Line-Ups Application Preamp Stage B & W high resolution colour high resolution OM3016 OM925 OM975 OM3026 OM925 OM975 Output Stage OM976 Wideband Transistors for Application in Video Output Amplifiers in Monitors


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    PDF OM3016 OM3026 OM925 OM925 OM975 OM976 BFQ231 BFQ231A BFQ251 BLY32 blf278 108 amplifier Philips Application BLX15 RF Power Amplifiers bgy55 blw95 BLF543 BFQ43 BLW33 blf177 108 amplifier

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


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    PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc