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    SOT343R

    Abstract: Bp SOT343R
    Text: Package outline Philips Semiconductors Plastic surface-mounted package; reverse pinning; 4 leads D SOT343R E B A X HE y v M A e 3 4 Q A A1 c 2 w M B 1 bp Lp b1 e1 detail X 1 2 mm scale DIMENSIONS mm are the original dimensions UNIT A A1 max bp b1 c D E e


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    PDF OT343R SOT343R Bp SOT343R

    Untitled

    Abstract: No abstract text available
    Text: Package outline Plastic surface-mounted package; reverse pinning; 4 leads D SOT343R E B A X HE y v M A e 3 4 Q A A1 2 w M B c 1 bp Lp b1 e1 detail X 1 2 mm scale DIMENSIONS mm are the original dimensions UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1


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    PDF OT343R

    SOT343R

    Abstract: Bp SOT343R
    Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Plastic surface mounted package; reverse pinning; 4 leads D SOT343R E B A X HE y v M A e 3 4 Q A A1 c 2 w M B 1 bp Lp b1 e1 detail X 1 2 mm scale DIMENSIONS mm are the original dimensions UNIT A A1


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    PDF OT343R SOT343R Bp SOT343R

    RF Wideband Transistors

    Abstract: MS-012AA
    Text: PACKAGE OUTLINES Package SOT23 SOT54 SOT89 SOT96-1 SOT122A SOT122D SOT122E SOT143B SOT143R SOT172A1 SOT172A2 SOT223 SOT323 SOT343N SOT343R SOT353 SOT363 SOT551A Surface-mount yes no yes yes no no no yes yes no no yes yes yes yes yes yes yes Page . .


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    PDF OT96-1 OT122A OT122D OT122E OT143B OT143R OT172A1 OT172A2 OT223 OT323 RF Wideband Transistors MS-012AA

    RF Wideband Transistors

    Abstract: No abstract text available
    Text: PACKAGE OUTLINES Package SOT23 SOT54 SOT54variant SOT89 SOT122A SOT143B SOT143R SOT172A1 SOT172A2 SOT223 SOT323 SOT343N SOT343R SOT353 SOT363 Surface-mount yes no no yes no yes yes no no yes yes yes yes yes yes Page . . . . . . . .


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    PDF OT54variant OT122A OT143B OT143R OT172A1 OT172A2 OT223 OT323 OT343N OT343R RF Wideband Transistors

    marking code AN mmic

    Abstract: BGA2002 RF TRANSISTOR 2.5 GHZ s parameter MMIC code D mmic marking A 4 pin dual-emitter amplifier marking 4 marking code 02 mmic mmic marking D M3D124
    Text: DISCRETE SEMICONDUCTORS M3D124 BGA2002 silicon MMIC amplifier Objective specification File under Discrete Semiconductors, SC14 1998 Sep 01 Philips Semiconductors Objective specification silicon MMIC amplifier BGA2002 PINNING SOT343R FEATURES • Low current, low voltage


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    PDF M3D124 BGA2002 OT343R marking code AN mmic BGA2002 RF TRANSISTOR 2.5 GHZ s parameter MMIC code D mmic marking A 4 pin dual-emitter amplifier marking 4 marking code 02 mmic mmic marking D M3D124

    Field-Effect Transistors

    Abstract: SOT54variant diodes PACKAGE
    Text: DISCRETE SEMICONDUCTORS Package outlines Small-signal Field-effect Transistors and Diodes 1999 May 11 PACKAGE INFORMATION Page SOD68 . SOD110 . SOD323 . SOD523 . SOT23 . SOT54 . SOT54variant . SOT143B . SOT143R . SOT323 . SOT343N


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    PDF OD110 OD323 OD523 OT54variant OT143B OT143R OT323 OT343N OT343R OT363 Field-Effect Transistors SOT54variant diodes PACKAGE

    Field-Effect Transistors

    Abstract: philips 045 Philips SC07 Small-signal Transistors
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Package outlines Small-signal field-effect transistors 1997 Dec 05 Supersedes data of 1995 Apr 21 File under Discrete Semiconductors, SC07 Philips Semiconductors Small-signal field-effect transistors Package outlines Plastic surface mounted package; 3 leads


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    PDF OT343R Field-Effect Transistors philips 045 Philips SC07 Small-signal Transistors

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BGA2001 Silicon MMIC amplifier Objective specification File under Discrete Semiconductors, SC14 1998 Jan 12 Philips Semiconductors Objective specification Silicon MMIC amplifier BGA2001 FEATURES PINNING SOT343R • Low current, low voltage


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    PDF BGA2001 SCA57 127127/00/01/pp8

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BGA2003 Silicon MMIC amplifier Objective specification File under Discrete Semiconductors, SC14 1998 Jan 13 Philips Semiconductors Objective specification Silicon MMIC amplifier BGA2003 FEATURES PINNING SOT343R • Low current PIN DESCRIPTION


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    PDF BGA2003 OT343R BGA2003 SCA57 127127/00/01/pp8

    transistor K 2333

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS M3D124 BGA2001 silicon MMIC amplifier Preliminary specification 1999 Jan 04 Philips Semiconductors Preliminary specification silicon MMIC amplifier BGA2001 PINNING SOT343R FEATURES • Low current, low voltage PIN DESCRIPTION • Very high power gain


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    PDF M3D124 BGA2001 SCA60 budgetnum/printrun/ed/pp11 transistor K 2333

    transistor marking codes list

    Abstract: BFG325W
    Text: BFG325W/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features • ■ ■ ■ High power gain


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    PDF BFG325W/XR OT343R transistor marking codes list BFG325W

    A7 NPN EPITAXIAL

    Abstract: Philips FA 145 BFG310W/XR BFG310W
    Text: BFG310W/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features • ■ ■ ■ High power gain


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    PDF BFG310W/XR OT343R A7 NPN EPITAXIAL Philips FA 145 BFG310W/XR BFG310W

    DRO lnb

    Abstract: BFG424W
    Text: BFG424W NPN 25 GHz wideband transistor Rev. 01 — 21 March 2006 Product data sheet 1. Product profile 1.1 General description NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.


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    PDF BFG424W OT343R MSC895 BFG424W DRO lnb

    Untitled

    Abstract: No abstract text available
    Text: BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 2 — 11 January 2012 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are


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    PDF BF1118; BF1118R; BF1118W; BF1118WR BF1118, BF1118R, BF1118W BF1118WR OT143B, OT143R,

    BF1118

    Abstract: BF1118R BF1118WR DIODE marking S4 06 MARKING CODE CGK
    Text: BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 1 — 29 June 2010 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are


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    PDF BF1118; BF1118R; BF1118W; BF1118WR BF1118, BF1118R, BF1118W BF1118WR OT143B, OT143R, BF1118 BF1118R DIODE marking S4 06 MARKING CODE CGK

    "MARKING CODE LE"

    Abstract: dual-gate BF1202WR
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Preliminary specification 1999 Nov 26 Philips Semiconductors Preliminary specification BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs PINNING FEATURES


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    PDF BF1202; BF1202R; BF1202WR BF1202WR budgetnum/printrun/ed/pp10 "MARKING CODE LE" dual-gate

    BF1201WR

    Abstract: dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs Preliminary specification 1999 Nov 26 Philips Semiconductors Preliminary specification BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs PINNING FEATURES


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    PDF BF1201; BF1201R; BF1201WR BF1201WR budgetnum/printrun/ed/pp10 dual-gate

    Untitled

    Abstract: No abstract text available
    Text: CM PA K -4 BFG310W/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features and benefits


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    PDF BFG310W/XR OT343R BFG310W

    Untitled

    Abstract: No abstract text available
    Text: CM PA K-4 BFG325W/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features and benefits


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    PDF BFG325W/XR OT343R BFG325W

    chip die npn transistor

    Abstract: BFG310W/XR
    Text: CM PA K-4 BFG310W/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features and benefits


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    PDF BFG310W/XR OT343R BFG310W chip die npn transistor BFG310W/XR

    Untitled

    Abstract: No abstract text available
    Text: BF904A; BF904AR; BF904AWR N-channel dual gate MOS-FETs Rev. 04 — 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact


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    PDF BF904A; BF904AR; BF904AWR BF904A

    BF1212R datasheet

    Abstract: BF121 BF1212 BF1212R BF1212WR dual-gate marking CODE ML
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs Product specification 2003 Nov 14 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1212; BF1212R; BF1212WR FEATURES PINNING • Short channel transistor with high forward transfer


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    PDF BF1212; BF1212R; BF1212WR SCA75 R77/02/pp15 BF1212R datasheet BF121 BF1212 BF1212R BF1212WR dual-gate marking CODE ML

    transistor marking NEP ghz

    Abstract: dk 2482 transistor BF1105WR marking code NA BF1105 BF1105R MGM253 dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Dec 01 File under Discrete Semiconductors, SC07 1997 Dec 02 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs


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    PDF BF1105; BF1105R; BF1105WR SCA56 117067/00/03/pp16 transistor marking NEP ghz dk 2482 transistor BF1105WR marking code NA BF1105 BF1105R MGM253 dual-gate