SOT343R
Abstract: Bp SOT343R
Text: Package outline Philips Semiconductors Plastic surface-mounted package; reverse pinning; 4 leads D SOT343R E B A X HE y v M A e 3 4 Q A A1 c 2 w M B 1 bp Lp b1 e1 detail X 1 2 mm scale DIMENSIONS mm are the original dimensions UNIT A A1 max bp b1 c D E e
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OT343R
SOT343R
Bp SOT343R
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Untitled
Abstract: No abstract text available
Text: Package outline Plastic surface-mounted package; reverse pinning; 4 leads D SOT343R E B A X HE y v M A e 3 4 Q A A1 2 w M B c 1 bp Lp b1 e1 detail X 1 2 mm scale DIMENSIONS mm are the original dimensions UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1
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OT343R
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SOT343R
Abstract: Bp SOT343R
Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Plastic surface mounted package; reverse pinning; 4 leads D SOT343R E B A X HE y v M A e 3 4 Q A A1 c 2 w M B 1 bp Lp b1 e1 detail X 1 2 mm scale DIMENSIONS mm are the original dimensions UNIT A A1
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OT343R
SOT343R
Bp SOT343R
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RF Wideband Transistors
Abstract: MS-012AA
Text: PACKAGE OUTLINES Package SOT23 SOT54 SOT89 SOT96-1 SOT122A SOT122D SOT122E SOT143B SOT143R SOT172A1 SOT172A2 SOT223 SOT323 SOT343N SOT343R SOT353 SOT363 SOT551A Surface-mount yes no yes yes no no no yes yes no no yes yes yes yes yes yes yes Page . .
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OT96-1
OT122A
OT122D
OT122E
OT143B
OT143R
OT172A1
OT172A2
OT223
OT323
RF Wideband Transistors
MS-012AA
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RF Wideband Transistors
Abstract: No abstract text available
Text: PACKAGE OUTLINES Package SOT23 SOT54 SOT54variant SOT89 SOT122A SOT143B SOT143R SOT172A1 SOT172A2 SOT223 SOT323 SOT343N SOT343R SOT353 SOT363 Surface-mount yes no no yes no yes yes no no yes yes yes yes yes yes Page . . . . . . . .
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OT54variant
OT122A
OT143B
OT143R
OT172A1
OT172A2
OT223
OT323
OT343N
OT343R
RF Wideband Transistors
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marking code AN mmic
Abstract: BGA2002 RF TRANSISTOR 2.5 GHZ s parameter MMIC code D mmic marking A 4 pin dual-emitter amplifier marking 4 marking code 02 mmic mmic marking D M3D124
Text: DISCRETE SEMICONDUCTORS M3D124 BGA2002 silicon MMIC amplifier Objective specification File under Discrete Semiconductors, SC14 1998 Sep 01 Philips Semiconductors Objective specification silicon MMIC amplifier BGA2002 PINNING SOT343R FEATURES • Low current, low voltage
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M3D124
BGA2002
OT343R
marking code AN mmic
BGA2002
RF TRANSISTOR 2.5 GHZ s parameter
MMIC code D
mmic marking A
4 pin dual-emitter
amplifier marking 4
marking code 02 mmic
mmic marking D
M3D124
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Field-Effect Transistors
Abstract: SOT54variant diodes PACKAGE
Text: DISCRETE SEMICONDUCTORS Package outlines Small-signal Field-effect Transistors and Diodes 1999 May 11 PACKAGE INFORMATION Page SOD68 . SOD110 . SOD323 . SOD523 . SOT23 . SOT54 . SOT54variant . SOT143B . SOT143R . SOT323 . SOT343N
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OD110
OD323
OD523
OT54variant
OT143B
OT143R
OT323
OT343N
OT343R
OT363
Field-Effect Transistors
SOT54variant
diodes PACKAGE
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Field-Effect Transistors
Abstract: philips 045 Philips SC07 Small-signal Transistors
Text: DISCRETE SEMICONDUCTORS DATA SHEET Package outlines Small-signal field-effect transistors 1997 Dec 05 Supersedes data of 1995 Apr 21 File under Discrete Semiconductors, SC07 Philips Semiconductors Small-signal field-effect transistors Package outlines Plastic surface mounted package; 3 leads
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OT343R
Field-Effect Transistors
philips 045
Philips SC07 Small-signal Transistors
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BGA2001 Silicon MMIC amplifier Objective specification File under Discrete Semiconductors, SC14 1998 Jan 12 Philips Semiconductors Objective specification Silicon MMIC amplifier BGA2001 FEATURES PINNING SOT343R • Low current, low voltage
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BGA2001
SCA57
127127/00/01/pp8
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BGA2003 Silicon MMIC amplifier Objective specification File under Discrete Semiconductors, SC14 1998 Jan 13 Philips Semiconductors Objective specification Silicon MMIC amplifier BGA2003 FEATURES PINNING SOT343R • Low current PIN DESCRIPTION
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BGA2003
OT343R
BGA2003
SCA57
127127/00/01/pp8
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transistor K 2333
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS M3D124 BGA2001 silicon MMIC amplifier Preliminary specification 1999 Jan 04 Philips Semiconductors Preliminary specification silicon MMIC amplifier BGA2001 PINNING SOT343R FEATURES • Low current, low voltage PIN DESCRIPTION • Very high power gain
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M3D124
BGA2001
SCA60
budgetnum/printrun/ed/pp11
transistor K 2333
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transistor marking codes list
Abstract: BFG325W
Text: BFG325W/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features • ■ ■ ■ High power gain
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BFG325W/XR
OT343R
transistor marking codes list
BFG325W
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A7 NPN EPITAXIAL
Abstract: Philips FA 145 BFG310W/XR BFG310W
Text: BFG310W/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features • ■ ■ ■ High power gain
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BFG310W/XR
OT343R
A7 NPN EPITAXIAL
Philips FA 145
BFG310W/XR
BFG310W
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DRO lnb
Abstract: BFG424W
Text: BFG424W NPN 25 GHz wideband transistor Rev. 01 — 21 March 2006 Product data sheet 1. Product profile 1.1 General description NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.
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BFG424W
OT343R
MSC895
BFG424W
DRO lnb
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Untitled
Abstract: No abstract text available
Text: BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 2 — 11 January 2012 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are
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BF1118;
BF1118R;
BF1118W;
BF1118WR
BF1118,
BF1118R,
BF1118W
BF1118WR
OT143B,
OT143R,
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BF1118
Abstract: BF1118R BF1118WR DIODE marking S4 06 MARKING CODE CGK
Text: BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 1 — 29 June 2010 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are
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BF1118;
BF1118R;
BF1118W;
BF1118WR
BF1118,
BF1118R,
BF1118W
BF1118WR
OT143B,
OT143R,
BF1118
BF1118R
DIODE marking S4 06
MARKING CODE CGK
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"MARKING CODE LE"
Abstract: dual-gate BF1202WR
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Preliminary specification 1999 Nov 26 Philips Semiconductors Preliminary specification BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs PINNING FEATURES
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BF1202;
BF1202R;
BF1202WR
BF1202WR
budgetnum/printrun/ed/pp10
"MARKING CODE LE"
dual-gate
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BF1201WR
Abstract: dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs Preliminary specification 1999 Nov 26 Philips Semiconductors Preliminary specification BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs PINNING FEATURES
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BF1201;
BF1201R;
BF1201WR
BF1201WR
budgetnum/printrun/ed/pp10
dual-gate
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Untitled
Abstract: No abstract text available
Text: CM PA K -4 BFG310W/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features and benefits
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BFG310W/XR
OT343R
BFG310W
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Untitled
Abstract: No abstract text available
Text: CM PA K-4 BFG325W/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features and benefits
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BFG325W/XR
OT343R
BFG325W
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chip die npn transistor
Abstract: BFG310W/XR
Text: CM PA K-4 BFG310W/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features and benefits
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BFG310W/XR
OT343R
BFG310W
chip die npn transistor
BFG310W/XR
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Untitled
Abstract: No abstract text available
Text: BF904A; BF904AR; BF904AWR N-channel dual gate MOS-FETs Rev. 04 — 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BF904A;
BF904AR;
BF904AWR
BF904A
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BF1212R datasheet
Abstract: BF121 BF1212 BF1212R BF1212WR dual-gate marking CODE ML
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs Product specification 2003 Nov 14 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1212; BF1212R; BF1212WR FEATURES PINNING • Short channel transistor with high forward transfer
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BF1212;
BF1212R;
BF1212WR
SCA75
R77/02/pp15
BF1212R datasheet
BF121
BF1212
BF1212R
BF1212WR
dual-gate
marking CODE ML
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transistor marking NEP ghz
Abstract: dk 2482 transistor BF1105WR marking code NA BF1105 BF1105R MGM253 dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Dec 01 File under Discrete Semiconductors, SC07 1997 Dec 02 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs
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BF1105;
BF1105R;
BF1105WR
SCA56
117067/00/03/pp16
transistor marking NEP ghz
dk 2482 transistor
BF1105WR
marking code NA
BF1105
BF1105R
MGM253
dual-gate
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