Untitled
Abstract: No abstract text available
Text: RF SIGNAL CHOKE 4.5 ±0.5 8.0+1/-0.5 6.5 MAX. 6.0 ± 0.5 6.0 ± 0.5 4.5 ± 0.5 3.0+1/-0.5 0.5 ±0.05 Unit: mm Marking Color Dot Part Number. 1 2 3 3361I-090 B W B 3361I -100 BR B B 3361I -110 BR BR B 3361I -120 BR R B 3361I -130 BR O B 3361I -140 BR Y B 3361I -150
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3361I-090
3361I
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DIAC DB3 specifications
Abstract: diac db3 D60 DIAC db3 dl breakback dmmdb4
Text: BI-DIRECTIONAL DIAC DB3 & DB4 Series SPECIFICATIONS Parameters Symbol Breakover Voltage V BR 1, V(BR)2 Breakover Voltage Symmetry |V(BR)1|-|V(BR)2| Dynamic Breakback Voltage I±V DI Breakover Current I(BR)1 AND I(BR)2 Peak Pulse Current for IP 10ms, 120pps, TA£4°C
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120pps,
DL-35
DO-35.
DO-35
C3CC03
DIAC DB3 specifications
diac db3
D60 DIAC
db3 dl
breakback
dmmdb4
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DIAC DB3 specifications
Abstract: diac db3 D60 DIAC diac breakback
Text: BI-DIRECTIONAL DIAC DB3 & DB4 Series SPECIFICATIONS Parameters Symbol Breakover Voltage V BR 1, V(BR)2 Breakover Voltage Symmetry |V(BR)1|-|V(BR)2| Dynamic Breakback Voltage I±V DI Breakover Current I(BR)1 AND I(BR)2 Peak Pulse Current for IP 10ms, 120pps, TA£4°C
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120pps,
DL-35
DO-35.
DO-35
C3CC03
DIAC DB3 specifications
diac db3
D60 DIAC
diac
breakback
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PDF
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marking br
Abstract: 1mm pitch BGA br27
Text: NETWORKS Thick Film R-Network BGA Resistor Package BR STRUCTURE 1 2 3 4 5 6 7 8 W IDENTIFICATION Type BODY COLOR MARKING BR Black All these products have Pb-free terminations and meet RoHS requirements White, Alpha Numeric BR 27 A P T TEB 1002 F PRODUCT CODE
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D-25578
marking br
1mm pitch BGA
br27
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PDF
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feature of ic UM 66
Abstract: 1r06 Y447 MPA-600 TSA2 um 66 ic 1R02 borosilicate glass NIST 546nm 1R01
Text: DIVISION DOCUMENT#-rev-# SEMICONDUCTEURS BROMONT, QUÉBEC 1050010.14 REV de 38 Jean-François Bédard DATE ACI 1R01 1R02 89/06/01 91/09/19 1R03 1R04 92/03/12 93/02/15 # br-376 # br-375 # br-505 BR-795 1R05 93/04/19 N/A 1R06 10-SE-93 N/A 7 94/07/04 N/A 8 9
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br-376
br-375
br-505
BR-795
10-SE-93
MPA-600"
\0-mitel\doc\105\1050010
feature of ic UM 66
1r06
Y447
MPA-600
TSA2
um 66 ic
1R02
borosilicate glass NIST
546nm
1R01
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PDF
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Bobbins and Accessories
Abstract: E16 bobbin bobbins philips bobbin PQ2026 ER bobbin
Text: 3923 EN BR magn.prd.acc 04-09-1998 13:29 Philips Components Bobbins & Accessories Pagina 1 Winding and assembling your perfect component 3923 EN BR magn.prd.acc 3923 EN BR magn.prd.acc 04-09-1998 13:29 Pagina 2 Our bobbins… …your basis for perfect windings
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040-H
Abstract: npn, transistor, sc 107 b
Text: MSC3930-BT1 Preferred Device NPN RF Amplifier Transistor http://onsemi.com MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30 Vdc Collector–Emitter Voltage V(BR)CEO 20 Vdc Emitter–Base Voltage V(BR)EBO 5.0 Vdc IC
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MSC3930-BT1
r14525
MSC3930
040-H
npn, transistor, sc 107 b
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sc 107 transistor
Abstract: NPN TRANSISTOR SC-70 23marking
Text: MSC3930-BT1 Preferred Device NPN RF Amplifier Transistor http://onsemi.com MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30 Vdc Collector–Emitter Voltage V(BR)CEO 20 Vdc Emitter–Base Voltage V(BR)EBO 5.0 Vdc IC
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MSC3930-BT1
323/SC
MSC3930
3000/Tape
sc 107 transistor
NPN TRANSISTOR SC-70
23marking
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PDF
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sot-323 transistor marking code 15
Abstract: sc 107 transistor NPN TRANSISTOR SC-70
Text: MSC3930-BT1 Preferred Device NPN RF Amplifier Transistor http://onsemi.com MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO 30 Vdc Collector−Emitter Voltage V(BR)CEO 20 Vdc Emitter−Base Voltage V(BR)EBO 5.0 Vdc IC
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MSC3930-BT1
sot-323 transistor marking code 15
sc 107 transistor
NPN TRANSISTOR SC-70
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Untitled
Abstract: No abstract text available
Text: SPLICING GUIDE FOR MIRROR-IMAGE CABLE MIRROR-IMAGE LAY-UP 25 V/S 24 V/BR 23 V/G 22 V/O 12 BK/O 13 BK/G 4 W/BR 3 W/G 10 R/S 9 R/BR 20 Y/S 15 BK/S 5 W/S 1 W/BL 11 BK/BL 21 V/BL 14 BK/BR 2 W/O 6 R/BL 16 Y/BL 7 R/O 17 Y/O 8 R/G 18 Y/G 19 Y/BR 25 PAIR UNIT U-25
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U-25-1
U-25-2
U-25-4
U-25-3
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btp 128 550
Abstract: AXP 209 TPSMP6.8A
Text: TPSMP6.8 thru TPSMP43A Vishay General Semiconductor New Product High Power Density Surface Mount Automotive Transient Voltage Suppressors DO-220AA SMP MAJOR RATINGS AND CHARACTERISTICS V(BR) 6.8 V to 43 V PPPM (for V(BR) 6.8 V) 250 W PPPM (for V(BR) 7.5 V - 12 V)
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TPSMP43A
J-STD-020C
2002/95/EC
2002/96/EC
DO-220AA
08-Apr-05
btp 128 550
AXP 209
TPSMP6.8A
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ZXTP25140BFH
Abstract: ZXTP25140BFHTA
Text: ZXTP25140BFH 140V, SOT23, PNP medium power transistor Summary BV BR CEX > -180V; BV(BR)CEO > -140V BV(BR)ECO > -7V ; IC(cont) = -1A Rce(sat) = 180 m⍀ typical Vce(sat) < -260mV @ 1A ; PD = 1.25W Description C Advanced process capability and package design have been used to
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ZXTP25140BFH
-180V;
-140V
-260mV
ZXTP25140BFHTA
ZXTP25140BFH
ZXTP25140BFHTA
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relay 12v 100A
Abstract: transistor pnp 12V 1A Collector Current vebo 15v sot23 ZXTN23015CFH ZXTP23015CFH ZXTP23015CFHTA
Text: ZXTP23015CFH 15V, SOT23, PNP medium power transistor Summary V BR CES > -15V, V(BR)CEO > -15V V(BR)ECO > -6V IC(CONT) = -6A RCE(SAT) = 20m⍀ typical VCE(SAT) < -36mV @ -1A PD = 1.25W Complementary part number ZXTN23015CFH Description Advanced process capability and package design have been used to
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ZXTP23015CFH
-36mV
ZXTN23015CFH
relay 12v 100A
transistor pnp 12V 1A Collector Current
vebo 15v sot23
ZXTN23015CFH
ZXTP23015CFH
ZXTP23015CFHTA
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PDF
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TS16949
Abstract: ZXTN25060BFH ZXTP25060BFH ZXTP25060BFHTA
Text: ZXTP25060BFH 60V, SOT23, PNP medium power transistor Summary BV BR CEX > -100V, BV(BR)CEO > -60V BV(BR)ECO > -7V ; IC(cont) = -3A; RCE(sat) = 58 m⍀ typical; VCE(sat) < -85mV @ -1A ; PD = 1.25W Complementary part number ZXTN25060BFH Description C Advanced process capability and package design have been used to
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ZXTP25060BFH
-100V,
-85mV
ZXTN25060BFH
D-81541
TS16949
ZXTN25060BFH
ZXTP25060BFH
ZXTP25060BFHTA
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Untitled
Abstract: No abstract text available
Text: D D H1 H W W1 D C-TICK Mark Safety Approved BR
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TS16949
Abstract: ZXTN23015CFH ZXTP23015CFH ZXTP23015CFHTA
Text: ZXTP23015CFH 15V, SOT23, PNP medium power transistor Summary V BR CES > -15V, V(BR)CEO > -15V V(BR)ECO > -6V IC(CONT) = -6A RCE(SAT) = 20m⍀ typical VCE(SAT) < -36mV @ -1A PD = 1.25W Complementary part number ZXTN23015CFH Description C Advanced process capability and package design have been used to
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ZXTP23015CFH
-36mV
ZXTN23015CFH
D-81541
TS16949
ZXTN23015CFH
ZXTP23015CFH
ZXTP23015CFHTA
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PDF
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ZXTN25060BFH
Abstract: ZXTP25060BFH ZXTP25060BFHTA
Text: ZXTP25060BFH 60V, SOT23, PNP medium power transistor Summary BV BR CEX > -100V, BV(BR)CEO > -60V BV(BR)ECO > -7V ; IC(cont) = -3A; RCE(sat) = 58 m⍀ typical; VCE(sat) < -85mV @ -1A ; PD = 1.25W Complementary part number ZXTN25060BFH Description C Advanced process capability and package design have been used to
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Original
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ZXTP25060BFH
-100V,
-85mV
ZXTN25060BFH
ZXTN25060BFH
ZXTP25060BFH
ZXTP25060BFHTA
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PDF
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marking 056
Abstract: ZXTP25100BFH ZETEX marking 056 SOT23 ZXTN25100BFH ZXTP25100BFHTA ZXTN
Text: ZXTP25100BFH 100V, SOT23, PNP medium power transistor Summary BV BR CEX > -140V, BV(BR)CEO > -100V BV(BR)ECX > -7V ; IC(cont) = -2A VCE(sat) < -130mV @ -1A RCE(sat) = 108m⍀ typical PD = 1.25W Complementary part number ZXTN25100BFH Description C Advanced process capability and package design have been used to
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ZXTP25100BFH
-140V,
-100V
-130mV
ZXTN25100BFH
marking 056
ZXTP25100BFH
ZETEX marking 056 SOT23
ZXTN25100BFH
ZXTP25100BFHTA
ZXTN
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TMPTA06
Abstract: TMPT2222A marking 1p TMPTA42 marking 1R NPN TMPT6427 tmpt3904 BEC npn V7560
Text: NPN TRANSISTORS SO T-23/TO -236A B ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain *CB0 V|BR CBO V|BR)CEO Device Type Marking V) TMPT2222A 1P 75 40 TMPT3904 1A 60 40 TMPT4401 2X 60 TMPT5089 1R TMPT6427 TMPTA06 TMPTA42 1D V (BR)EBO Max. V cb hFE
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OCR Scan
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T-23/TO
-236A
TMPT2222A
TMPT3904
TMPT4401
TMPT5089
TMPT6427
TMPTA06
TMPTA42
marking 1p
marking 1R NPN
BEC npn
V7560
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PDF
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tp4093
Abstract: TMPT5401 mA 723 TMPT2907 TP4221
Text: PNP TRANSISTORS ELECTRICAL CHARACTERISTICS at TA = 25°C ^CBO V Device Marking Type v BR CBO V ’ (BR)CEO (BR)EBO Max. @ V C8 (V) (V) (V) (nA) (V) v CE(MI) DC Current Gain K* @ lc @ v CE Max. @ lc Min. Max. (mA) (V) (V) (mA) Min. @ lc Cob1 t,1 (MHz) (mA)
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OCR Scan
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BCW29
BCW30
BCW61A
BCW61B
BCW61C
BCW61D
BCW68F
BCW68G
BCW69
BCW70
tp4093
TMPT5401
mA 723
TMPT2907
TP4221
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PDF
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Untitled
Abstract: No abstract text available
Text: PNP TRANSISTORS ELECTRICAL CHARACTERISTICS at TA = 25°C ^CBO V Device Marking Type BR CBO V ’ (BR)CEO (V) (V) v DC Current Gain (BR)EBO Max. @ V C8 (V) (nA) (V) K* v CE(MI) @ lc @ v CE Max. @ lc Min. Max. (mA) (V) (V) (mA) Min. @ lc Cob1 t,1 (MHz) (mA)
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OCR Scan
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BCW29
BCW30
BCW61A
BCW61B
BCW61C
BCW61D
BCW68F
BCW68G
BCW69
BCW70
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PDF
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transmitting triode
Abstract: marconi company marconi
Text: BR 129/JULY 1954 Triode Type BR 129 HF AMPLIFIER AND OSCILLATOR General. The BR 129 is a forced-air-cooled transmitting triode fitted with a tungsten filament. Cooling. The anode requires forced air cooling. The air cooling and air flow characteristics given show the
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OCR Scan
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129/JULY
transmitting triode
marconi company
marconi
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PDF
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npn, transistor, sc 107 b
Abstract: MOTOROLA DATE CODE transistor
Text: MSC2295-BT1* MSC2295-CT1* CASE 318D-03, STYLE 1 COLLECTOR MAXIMUM RATINGS 3 Ï A = 25 C Rating Collector-Base Voltage Collector-Em itter Voltage Emitter-Base Voltage Collector Current-Continuous Symbol Value Unit v (BR)CBO 30 Vdc V(BR)CEO 20 Vdc v (BR)EBO
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OCR Scan
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MSC2295-BT1*
MSC2295-CT1*
318D-03,
SC-59
MSC2295-BT1
MSC2295-CT1
MSC2295-BT1
npn, transistor, sc 107 b
MOTOROLA DATE CODE transistor
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O437
Abstract: marconi company marconi
Text: BR 155/JULY 1954 arconi Triode Type BR 155 VHF A M PLIFIER AND OSCILLATOR General. The BR 155 is a forced-air-cooled transm it ting triode fitted with a tungsten filament. Filament Starting. The cold filament resistance is approximately 0-01Q. The filament current must not
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OCR Scan
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155/JULY
O437
marconi company
marconi
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PDF
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