BR V 610 Search Results

BR V 610 Result Highlights (5)

Part	Manufacturer	Description
LM2917MX/NOPB	Texas Instruments	Frequency to Voltage Converter 14-SOIC -40 to 85
LM2907MX/NOPB	Texas Instruments	Frequency to Voltage Converter 14-SOIC -40 to 85
LM2917M/NOPB	Texas Instruments	Frequency to Voltage Converter 14-SOIC -40 to 85
LM2907M/NOPB	Texas Instruments	Frequency to Voltage Converter 14-SOIC -40 to 85
LM2917N-8/NOPB	Texas Instruments	Frequency to Voltage Converter 8-PDIP -40 to 85

BR V 610 Price and Stock

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Texas Instruments LMR51610XFQDBVRQ1 Switching Voltage Regulators Automotive 4.5V-to-65V 1A synchronous buck converter with 25uA quiescent current in SOT-23 package
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	LMR51610XFQDBVRQ1		3,000			1 $1.58 10 $1.42 100 $1.14 1000 $0.777 10000 $0.67	Buy Now
ITT Interconnect Solutions CIR030BRT-36-10P-F80-VO Circular MIL Spec Connector CIR 48C 48#16 PIN RECP WALL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CIR030BRT-36-10P-F80-VO					1 $113.1 10 $102 100 $98.32 1000 $98.32 10000 $98.32	Get Quote
ITT Interconnect Solutions CIR06BRT-36-10P-F80-VO Circular MIL Spec Connector CIR 48C 48#16 FR PIN PLUG
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CIR06BRT-36-10P-F80-VO					1 $194.51 10 $180.23 100 $173.76 1000 $173.76 10000 $173.76	Get Quote
ITT Interconnect Solutions CIR06BRT-36-10SW-F80-VO Circular MIL Spec Connector CIR 48C 48#16 FR SKT PLUG
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CIR06BRT-36-10SW-F80-VO					1 $196.15 10 $181.75 100 $175.23 1000 $175.23 10000 $175.23	Get Quote
Carling Technologies ROCKER VV-A OR BRB00 Rocker Switches ROCKER VV-A OR BRB00
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	ROCKER VV-A OR BRB00					1 $2.42 10 $2.41 100 $2.41 1000 $2.14 10000 $2.05	Get Quote

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BR V 610 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BCW91B Abstract: 2N3077 BFR40 2SC1211 2N3895A MMST8098 KT503G 2N2489A LOW-POWER SILICON NPN 2N736 Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 SO 65 70 75 80 85 90 95 726 V BR CEO hFE (V) V(BR)CEO 5 Manufacturer BFT30 MPS651 2N910 2N2522 2N760B 2N1566 2N736 MM2483 2N2483 2N3077 fT (Hz) Cobo Max (F) leBO Max (A) V(BR)CBO (V)	Original	PDF	BFT30 MPS651 2N910 2N2522 2N760B 2N1566 2N736 MM2483 2N2483 2N3077 BCW91B BFR40 2SC1211 2N3895A MMST8098 KT503G 2N2489A LOW-POWER SILICON NPN
Untitled Abstract: No abstract text available Text: IRF7307QPbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter V (BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance V GS(th) Gate Threshold Voltage	Original	PDF	IRF7307QPbF EIA-481 EIA-541.
pc2700r-25330-c0 Abstract: DDR400 HYS72D128320 HYS72D32300 HYS72D64300 HYS72D64320 HYS72D64300GBR-6-C Text: Data Sheet, Rev. 1.2, Oct. 2004 HYS72D32300[G/H]BR–[5/6/7]–C HYS72D64300[G/H]BR–[5/6/7]–C HYS72D64320[G/H]BR–[5/6]–C HYS72D128320[G/H]BR–[6/7]–C 184-Pin Registered Double Data Rate SDRAM Module Reg DIMM DDR SDRAM Memory Products N e v e r s t o p	Original	PDF	HYS72D32300 HYS72D64300 HYS72D64320 HYS72D128320 184-Pin pc2700r-25330-c0 DDR400 HYS72D64300GBR-6-C
Untitled Abstract: No abstract text available Text: Data Sheet, Rev. 1.3, Nov. 2005 HYS72D32300[G/H]BR–[5/6/7]–C HYS72D64300[G/H]BR–[5/6/7]–C HYS72D64320[G/H]BR–[5/6]–C HYS72D128320[G/H]BR–[6/7]–C 184-Pin Registered Double Data Rate SDRAM Module Reg DIMM DDR SDRAM Memory Products N e v e r s t o p	Original	PDF	HYS72D32300 HYS72D64300 HYS72D64320 HYS72D128320 184-Pin
mje13009 equivalent Abstract: buv48 equivalent TRANSISTOR REPLACEMENT table for transistor BUV47 BD241A MOTOROLA BU108 TIP33C equivalent TIP41C EQUIVALENT BD4202 buv48 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV48 BUV48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 150 WATTS The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power	Original	PDF	BUV48/BUV48A BUV48 BUV48A TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B mje13009 equivalent buv48 equivalent TRANSISTOR REPLACEMENT table for transistor BUV47 BD241A MOTOROLA BU108 TIP33C equivalent TIP41C EQUIVALENT BD4202
"Tektronix 475" Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,	Original	PDF	48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Untitled Abstract: No abstract text available Text: IRF7304QPbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(ON) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage	Original	PDF	IRF7304QPbF EIA-481 EIA-541.
2SK1178 Abstract: FM20 Text: 2SK1178 External dimensions 1 . FM20 Absolute Maximum Ratings Symbol Ta = 25ºC Electrical Characteristics Ratings Unit Symbol (Ta = 25ºC) Ratings typ min Unit max VDSS 500 V V(BR) DSS V I D = 250µA, VGS = 0V VGSS ±20 V I GSS ±500 nA VGS = ±20V	Original	PDF	2SK1178 FM100 2SK1178 FM20
222LL Abstract: VN10LLS 10LLS VN0605T VN0610LL VN2222LL Text: VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32 VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.18 5 @ VGS = 10 V	Original	PDF	VN10LLS, VN0605T, VN0610LL, VN2222LL VN10LLS VN0605T VN0610LL 08-Apr-05 222LL VN10LLS 10LLS VN0605T VN0610LL VN2222LL
2SK1178 Abstract: FM20 Text: 2SK1178 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 500 V V(BR) DSS (Ta = 25ºC) Ratings typ min Unit max 500 V Conditions I D = 250µA, VGS = 0V VGSS ±20 V I GSS ±500	Original	PDF	2SK1178 2SK1178 FM20
10LLS Abstract: VN0610LL 222ll VN10LLs VN2222LL VN0605T week code vishay SILICONIX Text: VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32 VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.18 5 @ VGS = 10 V	Original	PDF	VN10LLS, VN0605T, VN0610LL, VN2222LL VN10LLS VN0605T VN0610LL Spee18 O-226AA) 10LLS VN0610LL 222ll VN10LLs VN2222LL VN0605T week code vishay SILICONIX
222LL Abstract: VN10LLS 610LL VN2222LL vn2222ll vishay VN10LLs equivalent 10LLS VN0605T VN0610LL 70212 Text: VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32 VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.18 5 @ VGS = 10 V	Original	PDF	VN10LLS, VN0605T, VN0610LL, VN2222LL VN10LLS VN0605T VN0610LL 18-Jul-08 222LL VN10LLS 610LL VN2222LL vn2222ll vishay VN10LLs equivalent 10LLS VN0605T VN0610LL 70212
IR KBPC 608 Abstract: IR KBPC 606 kBPC 604 Text: KBPC 600 … KBPC 610 Silicon-Bridge Rectifiers Silizium-Brückengleichrichter Nominal current Nennstrom 6A Alternating input voltage Eingangswechselspannung Plastic case Kunststoffgehäuse 35…700 V 15.2 x 15.2 x 6.3 [mm] Weight approx. Gewicht ca. 3.5 g	Original	PDF	UL94V-0 IR KBPC 608 IR KBPC 606 kBPC 604
Untitled Abstract: No abstract text available Text: KBPC 600 … KBPC 610 Silicon-Bridge Rectifiers Silizium-Brückengleichrichter Nominal current – Nennstrom 6.0 A Alternating input voltage Eingangswechselspannung 35…700 V Plastic case Kunststoffgehäuse 15.2 x 15.2 x 6.3 [mm] Weight approx. – Gewicht ca.	Original	PDF	UL94V-0

y1010 Abstract: 1000S35 kbpc 600Y Text: KBPC 600Y Y 610 Silicon-Bridge Rectifiers Silizium-Brückengleichrichter Nominal current Nennstrom 6.0 A Alternating input voltage Eingangswechselspannung 35Y700 V Plastic case with Al-bottom 15.2 x 15.2 x 5.1 [mm] Kunststoffgehäuse mit Alu-Boden Weight approx.	Original	PDF	600Y610 35Y700 UL94V-0 y1010 1000S35 kbpc 600Y
369D Abstract: NTD4805N mosfet K 2865 Text: NTD4805N Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com V(BR)DSS	Original	PDF	NTD4805N NTD4805N/D 369D NTD4805N mosfet K 2865
2SK1178 Abstract: FM20 Text: 2SK1178 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 500 V V(BR) DSS VGSS ±20 V I GSS ID ±4.0 A I DSS A VTH 2.0 35 (Tc = 25ºC) W Re (yfs) 2.4 ±16 (Tch ID (pulse) PD 150ºC)	Original	PDF	2SK1178 2SK1178 FM20
GT 32 DIAC Abstract: TAG 203 350 2n50b tag 627 800 tag thyristoren 2N3936 2N3937 2N1601 tag 6 600 TO-48C Text: Thyristoren Silicon Controlled Rectifiers TYP* 8=V .V DRM RRM BRX 44.BRX 49 BRX 50.BRX 56 TAG 50.TAG 57 BR 103 TAG 60P TAG 60A TAG 06- BR 203 TAG 64F TAG 64A TAG 1-* TAG 2-* BTX 30-* TAG 520-* TAG 521~* TAG 605-* TAG 606-* TAG 106 BRX.61.BRX66 TAG 610-*	OCR Scan	PDF	RD-26 T0-18 502N1848A 2N1849 2NX849A GT 32 DIAC TAG 203 350 2n50b tag 627 800 tag thyristoren 2N3936 2N3937 2N1601 tag 6 600 TO-48C
TAG 203 350 Abstract: tag thyristoren tag 665 100 BTX 25 800 TAG 12 665 600 tag 627 800 TAG 600 TAG 203 to48c tag 6 600 Text: Thyristoren Silicon Controlled Rectifiers TYP* 8=V .V DRM RRM BRX 44.BRX 49 BRX 50.BRX 56 TAG 50.TAG 57 BR 103 TAG 60P TAG 60A TAG 06- BR 203 TAG 64F TAG 64A TAG 1-* TAG 2-* BTX 30-* TAG 520-* TAG 521~* TAG 605-* TAG 606-* TAG 106 BRX.61.BRX66 TAG 610-*	OCR Scan	PDF	RD-26 T0-18 O-48R T0-48D 2N5060. TAG 203 350 tag thyristoren tag 665 100 BTX 25 800 TAG 12 665 600 tag 627 800 TAG 600 TAG 203 to48c tag 6 600
222ll Abstract: 10LLS Text: VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number rDS(on) Max (Q) V (BR)DSS M in (V) VN10LLS 5 @ V GS = 1 0 V VN0605T 5 @ V Gs = 10 V 60 VN0610LL 5 @ V GS = 10 V VN2222LL 5 FEATURES @VGS = 10V VGS(th)(V)	OCR Scan	PDF	VN10LLS, VN0605T, VN0610LL, VN2222LL VN10LLS VN0605T VN0610LL VN2222LL S-04279-- 16-Jul-01 222ll 10LLS
md5000a Abstract: BFX36 MD5000 MFQ930 P/C MFQ6660 P/C BFX11 IRFE110 IRFE111 IRFE113 IRFE9120 Text: MULTIPLE SMALL-SIGNAL TRANSISTORS continued QUAD TMOS FETS rds (ON) Devices (£2) Max VGS (H7) @ ID (A) Min V(BR)DSS IDSS (V) @ VDS Max (V) ID (m A) @ VDS (V) (UA) Max (V) Min @ ID (VA) CISS IGSS (nA) Max @ VGS (V) CRSS ton toff (pf) Max @ VDS (V) (P0 Max	OCR Scan	PDF	MFQ930 MFQ960 MFQ990 MFQ1000 MFQ6660 IRFE110 MD3251AF MD3467 MD3467F MD3725 md5000a BFX36 MD5000 MFQ930 P/C MFQ6660 P/C BFX11 IRFE111 IRFE113 IRFE9120
SMP25N05-45L Abstract: SMP25N05 Text: T em ic SMP25N05-45L Siliconix N-Channel Enhancement-Mode Ttansistor, Logic Level 175 °C Maximum Junction Temperature Product Summary r DS on (£2) I d (A ) 0.045 @ V GS = 10 V 25 0.060 @ V GS = 4.25 V 25 V(BR)DSS (V) 50 T0-220AB o Drain Connected to Tab	OCR Scan	PDF	SMP25N05-45L T0-220AB P-36850--Rev. SMP25N05-45L SMP25N05
VNDQ09 Abstract: VQ1006 VQ1004 Text: JH SS& VQ1004 SERIES N-Channel Enhancement-Mode _MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY TOP VIEW PART NUMBER V BR DSS (V) VQ1004 60 VQ1006 90 T •d (A) PACKAGE 3.5 0.46 All 3.5 0.40 All Dual-ln-Une Package D1 [ 7 m] D4	OCR Scan	PDF	VQ1004 VQ1006 14-PIN VQ1006 VNDQ06 VNDQ09 VNDQ09
Untitled Abstract: No abstract text available Text: ESDA6V1-5T6 Transil arrays for ESD protection Features • 5 unidirectional Transil diodes ■ Breakdown voltage V br = 6.1 V min. ■ Low leakage current < 200 nA ■ Very small PCB area: 1.0 mm2 ■ 350 ^m pitch micro-package ■ Lead-free and RoHS package	OCR Scan	PDF

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BR V 610 Search Results

BR V 610 Result Highlights (5)

BR V 610 Price and Stock

Texas Instruments LMR51610XFQDBVRQ1

ITT Interconnect Solutions CIR030BRT-36-10P-F80-VO

ITT Interconnect Solutions CIR06BRT-36-10P-F80-VO

ITT Interconnect Solutions CIR06BRT-36-10SW-F80-VO

Carling Technologies ROCKER VV-A OR BRB00

BR V 610 Datasheets Context Search

BCW91B

Untitled

pc2700r-25330-c0

Untitled

mje13009 equivalent

"Tektronix 475"

Untitled

2SK1178

222LL

2SK1178

10LLS

222LL

IR KBPC 608

Untitled

y1010

369D

2SK1178

GT 32 DIAC

TAG 203 350

222ll

md5000a

SMP25N05-45L

VNDQ09

Untitled