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    BRILLIANCE SEMICONDUCTOR PLATING Search Results

    BRILLIANCE SEMICONDUCTOR PLATING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BRILLIANCE SEMICONDUCTOR PLATING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HY628100BLLG-55

    Abstract: HY628100B-LLG55 55NS BS62LV1029 BS62LV1029SC BS62LV1029SC-55 BS62LV1029STC BS62LV1029TC HY628100B E12855
    Text: APPROVED MANUFACTURERS LIST FOR WEB PARTS 650-0025 ITEM NUMBER -WEB PART DESCRIPTION IC SRAM 128K X 8 5V 55NS SOIC SMT REVISION HISTORY Rev D ECO # E12099 RELEASE TO WEB STORE. PREVIOUSLY ID'D AS 100-0007. Description of Change Proj Eng E E12855 APPROVE BRILLIANCE SEMICONDUCTOR. REMOVE OLD SOURCES.


    Original     		PDF E12099 E12855 32pin 525mil 8x20mm HY628100BLLG-55 HY628100B-LLG55 55NS BS62LV1029 BS62LV1029SC BS62LV1029SC-55 BS62LV1029STC BS62LV1029TC HY628100B E12855

    BH62UV4000

    Abstract: BH62UV4000DI BH62UV4000SI BH62UV4000STI BH62UV4000TI TSOP-32
    Text: Ultra Low Power/High Speed CMOS SRAM 512K X 8 bit BH62UV4000 Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V The BH62UV4000 is a high performance, ultra low power CMOS Ÿ Ultra low power consumption :


    Original     		PDF BH62UV4000 BH62UV4000 R0201-BH62UV4000 BH62UV4000DI BH62UV4000SI BH62UV4000STI BH62UV4000TI TSOP-32

    BS62LV4007

    Abstract: BS62LV4007EC BS62LV4007EI BS62LV4007PC BS62LV4007SC BS62LV4007SI BS62LV4007STC BS62LV4007STI BS62LV4007TC BS62LV4007TI
    Text: BSI Very Low Power/Voltage CMOS SRAM 512K X 8 bit BS62LV4007 „ FEATURES „ DESCRIPTION • Vcc operation voltage : 4.5V ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade: 68mA @55ns operating current I -grade: 70mA (@55ns) operating current C-grade: 58mA (@70ns) operating current


    Original     		PDF BS62LV4007 BS62LV4007 R0201-BS62LV4007 BS62LV4007EC BS62LV4007EI BS62LV4007PC BS62LV4007SC BS62LV4007SI BS62LV4007STC BS62LV4007STI BS62LV4007TC BS62LV4007TI

    BS62LV4008SC

    Abstract: BS62LV4008SI BS62LV4008STC BS62LV4008STI BS62LV4008TC BS62LV4008TI BS62LV4008 BS62LV4008EC BS62LV4008EI BS62LV4008PC
    Text: BSI Very Low Power/Voltage CMOS SRAM 512K X 8 bit BS62LV4008 „ FEATURES „ DESCRIPTION • Vcc operation voltage : 2.4V ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 29mA @55ns operating current I -grade: 30mA (@55ns) operating current C-grade: 24mA (@70ns) operating current


    Original     		PDF BS62LV4008 BS62LV4008 R0201-BS62LV4008 BS62LV4008SC BS62LV4008SI BS62LV4008STC BS62LV4008STI BS62LV4008TC BS62LV4008TI BS62LV4008EC BS62LV4008EI BS62LV4008PC

    Brilliance Semiconductor, Inc

    Abstract: No abstract text available
    Text: BSI Very Low Power/Voltage CMOS SRAM 32K X 8 bit BS62LV2563 „ FEATURES „ DESCRIPTION • Wide Vcc operation voltage : 2.4V ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade : 20mA Max. operating current I- grade : 25mA (Max.) operating current


    Original     		PDF BS62LV2563 BS62LV2563 R0201-BS62LV2563 Brilliance Semiconductor, Inc

    Untitled

    Abstract: No abstract text available
    Text: Very Low Power CMOS SRAM 32K X 8 bit BS62LV256 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 25mA Max. at 70ns


    Original     		PDF BS62LV256 R0201-BS62LV256

    125OC

    Abstract: BS62LV256
    Text: Very Low Power CMOS SRAM 32K X 8 bit BS62LV256 Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 25mA Max. at 70ns 1mA (Max.) at 1MHz


    Original     		PDF BS62LV256 BS62LV256 R0201-BS62LV256A 125OC

    125OC

    Abstract: BS62LV2006
    Text: Very Low Power CMOS SRAM 256K X 8 bit BS62LV2006 Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 18mA Max. 2mA (Max.) Standby current : 0.1uA (Typ.)


    Original     		PDF BS62LV2006 BS62LV2006 R0201-BS62LV2006A 125OC

    BS62LV256

    Abstract: BS62LV256DC BS62LV256JC BS62LV256JI BS62LV256PC BS62LV256PI BS62LV256SC BS62LV256SI BS62LV256TC BS62LV256TI
    Text: Very Low Power/Voltage CMOS SRAM 32K X 8 bit BSI BS62LV256 „ FEATURES „ DESCRIPTION • Wide Vcc operation voltage : 2.4V ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade : 20mA Max. operating current I- grade : 25mA (Max.) operating current


    Original     		PDF BS62LV256 BS62LV256 CMO10 R0201-BS62LV256 BS62LV256DC BS62LV256JC BS62LV256JI BS62LV256PC BS62LV256PI BS62LV256SC BS62LV256SI BS62LV256TC BS62LV256TI

    Untitled

    Abstract: No abstract text available
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K X 8 bit BS62LV1029 „ DESCRIPTION „ FEATURES • Vcc operation voltage : 4.5V ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade : 46mA @55ns operating current I- grade : 47mA (@55ns) operating current C-grade : 38mA (@70ns) operating current


    Original     		PDF BS62LV1029 BS62LV1029 R0201-BS62LV1029

    Untitled

    Abstract: No abstract text available
    Text: Very Low Power/Voltage CMOS SRAM 32K X 8 bit BSI BS62LV256 n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V C-grade : 20mA Max. operating current I-grade : 25mA(Max.) operating current 0.01uA (Typ.) CMOS standby current


    Original     		PDF BS62LV256 BS62LV256 R0201-BS62LV256

    Untitled

    Abstract: No abstract text available
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K X 8 bit BS62LV1028 „ DESCRIPTION „ FEATURES • Wide Vcc operation voltage : 2.4V ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade : 17mA @55ns operating current I- grade : 18mA (@55ns) operating current


    Original     		PDF BS62LV1028 BS62LV1028 R0201-BS62LV1028

    Untitled

    Abstract: No abstract text available
    Text: BSI Ultra Low Power/Voltage CMOS SRAM 32K X 8 bit BS62UV256 „ FEATURES „ DESCRIPTION • Ultra low operation voltage : 1.8V ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade : 10mA Max. operating current I- grade : 15mA (Max.) operating current


    Original     		PDF BS62UV256 005uA 150ns BS62UV256 R0201-BS62UV256

    Untitled

    Abstract: No abstract text available
    Text: BSI Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit BS62UV1024 „ FEATURES „ DESCRIPTION • Wide Vcc operation voltage : 2.0V ~ 3.6V • Ultra low power consumption : Vcc = 2.2V C-grade : 10mA Max. operating current I- grade : 15mA (Max.) operating current


    Original     		PDF BS62UV1024 150ns BS62UV1024 R0201-BS62UV1024

    BS62LV256

    Abstract: BS62LV256DC BS62LV256PC BS62LV256PI BS62LV256SC BS62LV256SI BS62LV256TC BS62LV256TI
    Text: Very Low Power CMOS SRAM 32K X 8 bit BS62LV256 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 25mA Max. at 70ns


    Original     		PDF BS62LV256 R0201-BS62LV256 BS62LV256 BS62LV256DC BS62LV256PC BS62LV256PI BS62LV256SC BS62LV256SI BS62LV256TC BS62LV256TI

    BS62UV256

    Abstract: BS62UV256DC BS62UV256PC BS62UV256PI BS62UV256SC BS62UV256SI BS62UV256TC BS62UV256TI
    Text: Ultra Low Power CMOS SRAM 32K X 8 bit BS62UV256 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC low operation voltage : 1.8V ~ 3.6V Ÿ Ultra low power consumption : VCC = 2.0V Operation current : 15mA Max. at 150ns


    Original     		PDF BS62UV256 150ns 005uA 100ns BS62UV256 R0201-BS62UV256 BS62UV256DC BS62UV256PC BS62UV256PI BS62UV256SC BS62UV256SI BS62UV256TC BS62UV256TI

    BS62LV2009

    Abstract: BS62LV2009DC BS62LV2009DI BS62LV2009SC BS62LV2009STC BS62LV2009STI BS62LV2009TC BS62LV2009TI BS62LV2016SI TSOP-32
    Text: Very Low Power/Voltage CMOS SRAM 256K X 8 bit BSI BS62LV2009 „ FEATURES „ DESCRIPTION • Vcc operation voltage : 2.4V ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 22mA @55ns operating current I -grade: 23mA (@55ns) operating current C-grade: 17mA (@70ns) operating current


    Original     		PDF BS62LV2009 BS62LV2009 R0201-BS62LV2009 BS62LV2009DC BS62LV2009DI BS62LV2009SC BS62LV2009STC BS62LV2009STI BS62LV2009TC BS62LV2009TI BS62LV2016SI TSOP-32

    BS62LV2006

    Abstract: BS62LV2006DC BS62LV2006SC BS62LV2006SI BS62LV2006STC BS62LV2006STI BS62LV2006TC BS62LV2006TI TSOP-32
    Text: Very Low Power CMOS SRAM 256K X 8 bit BS62LV2006 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC operation voltage : 2.4V ~ 5.5V y Very low power consumption : VCC = 3.0V Operation current : 23mA Max. at 55ns


    Original     		PDF BS62LV2006 6/20uA R0201-BS62LV2006 BS62LV2006 BS62LV2006DC BS62LV2006SC BS62LV2006SI BS62LV2006STC BS62LV2006STI BS62LV2006TC BS62LV2006TI TSOP-32

    BS62LV1025

    Abstract: No abstract text available
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K X 8 bit BS62LV1025 „ FEATURES „ DESCRIPTION • Vcc operation voltage : 4.5V ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade : 35mA Max. operating current I- grade : 40mA (Max.) operating current 0.4uA (Typ.) CMOS standby current


    Original     		PDF BS62LV1025 BS62LV1025SC BS62LV1025TC BS62LV1025STC BS62LV1025PC BS62LV1025JC BS62LV1025DC BS62LV1025SI BS62LV1025TI BS62LV1025STI BS62LV1025

    Untitled

    Abstract: No abstract text available
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K X 8 bit BS62LV1023 „ FEATURES „ DESCRIPTION • Vcc operation voltage : 2.4V ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade : 20mA Max. operating current I- grade : 25mA (Max.) operating current 0.02uA (Typ.) CMOS standby current


    Original     		PDF BS62LV1023 BS62LV1023SC BS62LV1023TC BS62LV1023STC BS62LV1023PC BS62LV1023JC BS62LV1023DC BS62LV1023SI BS62LV1023TI BS62LV1023STI

    Untitled

    Abstract: No abstract text available
    Text: BSI Very Low Power/Voltage CMOS SRAM 32K X 8 bit BS62LV2565 „ FEATURES „ DESCRIPTION • Wide Vcc operation voltage : 4.5V ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade : 35mA Max. operating current I- grade : 40mA (Max.) operating current


    Original     		PDF BS62LV2565 BS62LV2565 volt315 R0201-BS62LV2565

    Untitled

    Abstract: No abstract text available
    Text: Very Low Power CMOS SRAM 512K X 8 bit BS62LV4006 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 30mA Max. at 55ns


    Original     		PDF BS62LV4006 volta62LV4006 R0201-BS62LV4006

    BS62LV1028

    Abstract: BS62LV1028DC BS62LV1028JC BS62LV1028PC BS62LV1028SC BS62LV1028SI BS62LV1028STC BS62LV1028STI BS62LV1028TC BS62LV1028TI
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K X 8 bit BS62LV1028 „ DESCRIPTION „ FEATURES • Wide Vcc operation voltage : 2.4V ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade : 17mA @55ns operating current I- grade : 18mA (@55ns) operating current


    Original     		PDF BS62LV1028 BS62LV1028 R0201-BS62LV1028 BS62LV1028DC BS62LV1028JC BS62LV1028PC BS62LV1028SC BS62LV1028SI BS62LV1028STC BS62LV1028STI BS62LV1028TC BS62LV1028TI

    SOP32 450mil

    Abstract: No abstract text available
    Text: Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit BSI „ FEATURES • Wide Vcc operation voltage : C-grade: 1.8V~3.6V I-grade: 1.9V~3.6V Vcc_min.=1.65V at 25oC • Ultra low power consumption : Vcc = 2.0V C-grade : 8mA (Max.) operating current I- grade : 10mA (Max.) operating current


    Original     		PDF BS62UV2006 100ns R0201-BS62UV2006 SOP32 450mil