BROADBAND RF POWER AMP Search Results

BROADBAND RF POWER AMP Result Highlights (5)

Part	Manufacturer	Description
TC75S102F	Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25
TPD4164F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31
TPD4164K	Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30
TPD4163K	Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30
TPD4163F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31

BROADBAND RF POWER AMP Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: CENTELLAX UATL30MC Datasheet 0.04 - 30GHz Broadband MMIC Medium-Power Amplifier Application The UATL30MC Broadband MMIC Medium-Power Amplifier is designed for broadband power applications in RF and microwave communications, test equipment and military systems. By using specific	Original	UATL30MC 30GHz 40MHz. 5-20GHz: 30GHz. 5-20GHz, 22dBm 10x10mil	PDF
CC21T36K240G5 Abstract: UATL30MC Text: CENTELLAX UATL30MC Datasheet 0.04 - 30GHz Broadband MMIC Medium-Power Amplifier Application The UATL30MC Broadband MMIC Medium-Power Amplifier is designed for broadband power applications in RF and microwave communications, test equipment and military systems. By using specific	Original	UATL30MC 30GHz 40MHz. 5-20GHz: 20GHz 2390x920um 10x10mil SL1010X7R101M16VH 120pF CC21T36K240G5	PDF
zo 103MA Abstract: SL1010 SL353 DC TO 20GHZ RF AMPLIFIER MMIC UATL30S1C Text: CENTELLAX UATL30S1C Datasheet 0.04 - 30GHz Broadband MMIC Medium-Power Amplifier Application The UATL30S1C Broadband MMIC Medium-Power Amplifier is designed for broadband power applications in RF and microwave communications, test equipment and military systems. By using specific	Original	UATL30S1C 30GHz 40MHz. 5-20GHz: 24dBm 21dBm 04-30GHz zo 103MA SL1010 SL353 DC TO 20GHZ RF AMPLIFIER MMIC	PDF
UAPL65SC Abstract: Centellax PLFX MMIC POWER AMPLIFIER 65GHz Centellax uapl65sc PLFX Traveling Wave Amplifier sl202 Text: CENTELLAX UAPL65SC Datasheet 0.04 - 65GHz Broadband MMIC Medium-Power Amplifier with PLFX Application The UAPL65SC Broadband MMIC Medium-Power Amplifier with PLFX is designed for broadband power applications in RF and microwave communications, test equipment and military systems. By	Original	UAPL65SC 65GHz 40MHz. 04-50GHz 20x20mil SL2020X7R101M16VH 100pF 25x25mil Centellax PLFX MMIC POWER AMPLIFIER 65GHz Centellax uapl65sc PLFX Traveling Wave Amplifier sl202	PDF
UAPL45SC Abstract: zo 103MA 40GHz power amplifier Traveling Wave Amplifier Text: CENTELLAX UAPL45SC Datasheet 0.04 - 45GHz Broadband MMIC Medium-Power Amplifier with PLFX Application The UAPL45SC Broadband MMIC Medium-Power Amplifier with PLFX is designed for broadband power applications in RF and microwave communications, test equipment and military systems. By	Original	UAPL45SC 45GHz 40MHz. 40GHz: 10x10mil SL1010X7R101M16VH 100pF 25x25mil zo 103MA 40GHz power amplifier Traveling Wave Amplifier	PDF
VK200 19 4B INDUCTOR Abstract: arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single	Original	MRF275L VK200 19 4B INDUCTOR arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor	PDF
EB-27 motorola Abstract: hf power combiner broadband transformers Indiana general ferrite core stackpole 57-1845-24b FERRITE TOROID Indiana General F684-1 57-1845-24b Design of H. F. Wideband Power Transformers BROADBAND TRANSFORMERS AND POWER ecom-2989 power combiner broadband transformers Text: Order this document by AN749/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN749 BROADBAND TRANSFORMERS AND POWER COMBINING TECHNIQUES FOR RF Prepared by: H. Granberg RF Circuits Engineering INTRODUCTION The following discussion focuses on broadband transformers for RF power applications with practical examples	Original	AN749/D AN749 EB-27 motorola hf power combiner broadband transformers Indiana general ferrite core stackpole 57-1845-24b FERRITE TOROID Indiana General F684-1 57-1845-24b Design of H. F. Wideband Power Transformers BROADBAND TRANSFORMERS AND POWER ecom-2989 power combiner broadband transformers	PDF
thermistor r5t Abstract: chip resistor 1206 c19a S1239 MOTOROLA P C3B Kemet bc17a GX-0300-55 R7B Connector RO3010 Text: MOTOROLA MRF373 MRF373S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 60 W, 470 – 860 MHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this	Original	MRF373S MRF373 31JUL04 31JAN05 thermistor r5t chip resistor 1206 c19a S1239 MOTOROLA P C3B Kemet bc17a GX-0300-55 R7B Connector RO3010	PDF
MRF373 Abstract: RO3010 A419 MRF373 PUSH PULL C14A MRF373 print circuit P1210 MRF373S atc 174 BUY13 Text: MOTOROLA The RF MOSFET Line MRF373 MRF373S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 470 – 860 MHz, 60 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this	Original	MRF373 MRF373S MRF373) MRF373 DEVICEMRF373/D RO3010 A419 MRF373 PUSH PULL C14A MRF373 print circuit P1210 MRF373S atc 174 BUY13	PDF
MRF173 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field Effect Transistor N–Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 200 MHz	Original	MRF173 MRF173. AN721, MRF173	PDF
J133 mosfet transistor Abstract: mosfet j133 J104 MOSFET j122 mosfet mosfet j122 9601 mosfet J122 transistor transistor z5 TRANSISTOR J15 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N–Channel Enhancement–Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make	Original	MRF9002R2 MRF9002R2 J133 mosfet transistor mosfet j133 J104 MOSFET j122 mosfet mosfet j122 9601 mosfet J122 transistor transistor z5 TRANSISTOR J15	PDF
An Introduction to Broadband Impedance Transformation for RF Power Amplifiers Abstract: transistor substitution chart michael hiebel fundamentals of vector analysis broadband impedance transformation smith AN-721 MOTOROLA small signal transistors Text: From January 2009 High Frequency Electronics Copyright 2009 Summit Technical Media, LLC High Frequency Design BROADBAND MATCHING An Introduction to Broadband Impedance Transformation for RF Power Amplifiers By Anthony J. Bichler RF Micro Devices, Inc. T	Original	AN-721, An Introduction to Broadband Impedance Transformation for RF Power Amplifiers transistor substitution chart michael hiebel fundamentals of vector analysis broadband impedance transformation smith AN-721 MOTOROLA small signal transistors	PDF
MRF255 equivalent Abstract: mrf255 mosfet MRF255 MRF255PHT arco 461 mica trimmer ES211 "RF MOSFETs" 100 watt hf mosfet 12 volt 14 watt hf mosfet 12 volt vdd 2204B Text: MOTOROLA Order this document by MRF255/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Power Field-Effect Transistor N–Channel Enhancement–Mode 55 W, 12.5 Vdc, 54 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies	Original	MRF255/D MRF255 MRF255/D* DEVICEMRF255/D MRF255 equivalent mrf255 mosfet MRF255 MRF255PHT arco 461 mica trimmer ES211 "RF MOSFETs" 100 watt hf mosfet 12 volt 14 watt hf mosfet 12 volt vdd 2204B	PDF
UNELCO Abstract: S11 zener diode motorola MOSFET 935 AN211A MRF275L VK200 VK200 4B inductor Text: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single	Original	MRF275L/D MRF275L UNELCO S11 zener diode motorola MOSFET 935 AN211A MRF275L VK200 VK200 4B inductor	PDF

MOSFET J132 Abstract: mosfet J137 motorola 305 470 860 mhz PCB GX-0300-55 S1239 M2503 Text: MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA MRF373 MRF373S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 60 W, 470 – 860 MHz LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this	Original	MRF373/D MRF373 MRF373S MRF373S MRF373/D MOSFET J132 mosfet J137 motorola 305 470 860 mhz PCB GX-0300-55 S1239 M2503	PDF
alc 885 Abstract: "RF MOSFETs" 1N5925A AN211A AN721 MRF173 VK200 Text: Order this document by MRF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field Effect Transistor N–Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 200 MHz	Original	MRF173/D MRF173 alc 885 "RF MOSFETs" 1N5925A AN211A AN721 MRF173 VK200	PDF
MRF255 equivalent Abstract: electrolytic capacitor 470 mrf255 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 55 W, 12.5 Vdc, 54 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies	OCR Scan	MRF255 MRF255 equivalent electrolytic capacitor 470	PDF
RF MOSFETs Abstract: motorola bipolar transistor data manual application MOSFET transmitters fm amplifier RF CLASS B FET MOSFET Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field E ffect Transistor N-Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 200 MHz	OCR Scan	MRF173. AN721, MRF173 RF MOSFETs motorola bipolar transistor data manual application MOSFET transmitters fm amplifier RF CLASS B FET MOSFET	PDF
uhf tv power transistor 250w Abstract: No abstract text available Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF176GV MRF176GU The RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-Mode 200/150 W, 50 V, 500 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . . designed for broadband commercial and military applications using push	OCR Scan	MRF176GV MRF176GU MRF176GV MRF176G MRF176 MRF176GU uhf tv power transistor 250w	PDF
J115 mosfet Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF177 RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz	OCR Scan	10pFD 50Vdc 1N5347B, RF177 J115 mosfet	PDF
J945 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field E ffect Transistors MRF177 N-Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz	OCR Scan	MarketinC14 10nFD 50Vdc 1N5347B 20Vdc RF177 J945	PDF
SU 179 transistor Abstract: s227 Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MRF5035 Advance Information The RF MOSFET Line Motorola Preferred Device RF Power Field Effect Transistor N-Channel Enhancement-Mode 35 W, 12.5 VOLTS, 512 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and Industrial applications at frequen	OCR Scan	MRF5035 MRF5035 AN215A, MRF5035. AN721, RF5035 SU 179 transistor s227	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF177 RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFET 100W , 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz	OCR Scan	MRF177/D	PDF
sp 0937 Abstract: VK200 inductor of high frequencies Nippon capacitors Text: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 100W , 28 V, 500 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single	OCR Scan	MRF275L/D MRF275L sp 0937 VK200 inductor of high frequencies Nippon capacitors	PDF

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BROADBAND RF POWER AMP Search Results

BROADBAND RF POWER AMP Result Highlights (5)

BROADBAND RF POWER AMP Datasheets Context Search

Untitled

CC21T36K240G5

zo 103MA

UAPL65SC

UAPL45SC

VK200 19 4B INDUCTOR

EB-27 motorola

thermistor r5t

MRF373

MRF173

J133 mosfet transistor

An Introduction to Broadband Impedance Transformation for RF Power Amplifiers

MRF255 equivalent

UNELCO

MOSFET J132

alc 885

MRF255 equivalent

RF MOSFETs

uhf tv power transistor 250w

J115 mosfet

J945

SU 179 transistor

Untitled

sp 0937