BUZ MOSFET
Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8
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615NV
BSP318S
BUZ MOSFET
mosfet BUZ 326
BUZ MOSFET 334
spd14n05
mosfet BUZ 349
mosfet buz 90a
BUZ 100 MOSFET
bup202
BUZ MOSFET 102s
BUZ MOSFET 111S
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SS89 transistor
Abstract: SS89 siemens BS 240 siemens SS89 ss89 to-92 BSS89 BSS 89
Text: SIEMENS BSS 89 SIPMOS Small-Signal Transistor • N channel • Enhancement mode Is • Logic Level • ^ G S th 1 ^ 3 ^ = 0.8.2.0V VPT05158 Pin 1 Pin 2 G Type BSS 89 ^bs 240 V Type BSS 89 BSS 89 BSS 89 BSS 89 Ordering Code Q62702-S455 Q62702-S519
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VPT05158
Q62702-S455
Q62702-S519
Q62702-S619
Q62702-S385
E6288
E6296
E6325
SS89 transistor
SS89 siemens
BS 240 siemens
SS89
ss89 to-92
BSS89
BSS 89
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Q62702-S616
Abstract: Q62702-S483 BS 240 siemens BSS229 Q62702-S601 Q62702-S489 q62702-s484 Q62702-S455 BSS 130 Q62702-S615
Text: SIEMENS SIPMOS Kleinsignaltransistoren SIPMOS® Small-Signal Transistors Bedrahtete Bauformen Leaded types Typ Type ^D S m ax ^G S (th ) fa (max) ^ D S {o n )m a x V V mA n N-Kanal-Anreicherungstypen P lot mW Bestellnummer Ordering code Gehäuse Package
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BSS295
Q62702-S464
Q62702-S603
Q67000-S061
Q67000-S062
Q62702-S483
Q62702-S615
O-900
Q62702-S505
Q62702-S489
Q62702-S616
BS 240 siemens
BSS229
Q62702-S601
q62702-s484
Q62702-S455
BSS 130
Q62702-S615
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321 SOT
Abstract: DIP-6 bsp300 SOT23_215 BSS125
Text: SIEMENS Typenübersicht nach Produktgruppen Selection Guide by Product Groups SIPMOS Small Signal Transistors Type ^88 nto V ^OS(0n)mw mA Q Pese») V Package Page -1 .8 . .-0 .7 - 1.8 .-0 .7 - 1.8 .-0 .7 - 1.8 .-0 .7 TO-92 TO-92 TO-92 TO-92 503 416
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OT-223
OT-23
BSSOT-223
OT-89
321 SOT
DIP-6
bsp300
SOT23_215
BSS125
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BUZ100
Abstract: No abstract text available
Text: SIEMENS BUZ 100L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Ultra low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type Vbs BUZ100L 50 V 4j 60 A
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O-220
BUZ100L
C67078-S1354-A2
BUZ100
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diode ft 344
Abstract: BS 240 siemens transistor buz 210
Text: SIEMENS BUZ 344 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 344 Vds 100 V b 50 A flbs<on 0.035 ß Package Ordering Code TO-218 AA C67078-S3132-A2 Maximum Ratings Parameter Symbol Continuous drain current Values
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O-218
C67078-S3132-A2
O-218AA
diode ft 344
BS 240 siemens
transistor buz 210
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bsm10gd100dn1
Abstract: BSM10GD100DN BTS 302 BSM10GD100 E6327 BUZ 324 E6288 eTS 410 siemens bsm 101 AR C67076-A2505-A52
Text: SIEMENS Typ/Bestellnummern Type/Ordering Codes Ordering code Type BRT 11 H C67079-A1000-A6 BSM 50 GAL 100 D C67076-A2002-A2 BRT 11 H Option 7 C67079-A1040-A11 BSM 50 GAL 120 D C67076-A2010-A2 BRT 11 H Option 1 + 7 C67079-A1040-A17 BSM 50 GB 100 D C67076-A2100-A2
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E-6288
BSM10GD100DN1
C67079-A1000-A6
C67079-A1040-A11
C67079-A1040-A17
C67079-A1001-A6
C67079-A1041-A5
C67079-A10436
E-6327
BSM10GD100DN
BTS 302
BSM10GD100
E6327
BUZ 324
E6288
eTS 410
siemens bsm 101 AR
C67076-A2505-A52
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KSS 240
Abstract: No abstract text available
Text: SIEMENS BUZ 31 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 31 Vds 200 V to 14.5 A ^DS on 0.2 f l Package Ordering Code TO-220 AB C67078-S.1304-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values
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O-220
C67078-S
1304-A2
GPT35I55
KSS 240
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Untitled
Abstract: No abstract text available
Text: SIEMENS B S S 192 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-2.0 V Type VDS b BSS 192 -240 V -0.15 A Type BSS 192 Ordering Code Q62702-S634 %S(on) 20 Q. Package Marking SOT-89 KB Tape and Reel Information
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OT-89
Q62702-S634
E6327
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PDF
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Untitled
Abstract: No abstract text available
Text: BEE D • ¿123b32Q 00170^3 b « S I P T'3 SIPMOS P Channel MOSFET SIEMENS/ SPCL-, SEMICONDS BSP 92 _ Preliminary Data • SIPMOS - enhancement mode • Drain-source voltage Vfcj = -240V • Continuous drain current / o = -0.18A • Draln-source on-resistance
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123b32Q
-240V
Q62702-S653
23b320
00170e
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transistor marking 7D
Abstract: marking MS 7d marking "marking ms"
Text: SIEMENS GaAs FET CF 739 Features • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-F1215
OT-143
transistor marking 7D
marking MS
7d marking
"marking ms"
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Q62702-S510
Abstract: No abstract text available
Text: SIPMOS Kleinsignaltransistoren SIPMOS®Small-Signal Transistors Bedrahtete Bauformen Leaded Types Typ Type ^DS max. V ^ 3S (thj V (max) mA Iff [» Ä D3 {on) max N-Kanal-Anreicherungstypen . Aot mW Bestellnummer Ordering Code Gehäuse Package 1! Bild Figure
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BSS98
Q62702-S464
Q62702-S603
Q67000-S061
Q67000-S062
Q62702-S489
Q67000-S065
Q62702-S458
Q62702-S623
Q62702-S510
Q62702-S510
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transistor c2311
Abstract: transistor Bc 580 transistor bc 102 transistor BC 194 Transistor MARKING CODE AW BC 104 transistor TRANSISTOR BC 115 marking code fs 1 sot 323 transistor 7s 849 transistor BC 660
Text: SIEMENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • For AF input stages and driver applications • • • • High current gain Low coliector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W,
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Q62702-C2319
Q62702-C2279
Q62702-C2304
Q62702-C2305
Q62702-C2306
Q62702-C2307
Q62702-C2308
Q62702-C2309
Q62702-C2310
62702-C2311
transistor c2311
transistor Bc 580
transistor bc 102
transistor BC 194
Transistor MARKING CODE AW
BC 104 transistor
TRANSISTOR BC 115
marking code fs 1 sot 323
transistor 7s 849
transistor BC 660
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siemens r10 core
Abstract: siemens ferrite n22 p14 CRASTIN CE 7931 Siemens Ferrite n27 RM Siemens Ferrite perminvar Siemens Ferrite n67 RM siemens siferrit al 400 siemens R10 K1 siferrit mt 500 b
Text: SIFERRIT Materials Based on IEC 60401, the data specified here are typical data for the material in question, which have been determined principally on the basis of ring cores. The purpose of such characteristic material data is to provide the user with improved means for
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buz 342 G
Abstract: transistor 342 G transistor 342 pf buz 342 transistor FR 220 ph c5 diode siemens fog
Text: SIEMENS BUZ 342 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • du/df rated • Ultra low on-resistance • 175°C operating temperature Type BUZ 342 Vds 50 V h 60 A flbS on Package Ordering Code 0.01 Q TO-218 AA C67078-S3135-A2
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O-218
C67078-S3135-A2
O-218AA
buz 342 G
transistor 342 G
transistor 342 pf
buz 342 transistor
FR 220
ph c5 diode
siemens fog
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SmD TRANSISTOR 42T
Abstract: smd 42t
Text: SIEMENS BUZ 100 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/df rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vbs >D ffDS on Package Ordering Code BUZ100
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O-220
BUZ100
C67078-S1348-A2
6235bDS
SmD TRANSISTOR 42T
smd 42t
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Untitled
Abstract: No abstract text available
Text: SIEMENS 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module HYS64V2000GU HYS72V2000GU 168 pin unbuffered DIMM Modules Preliminary Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Module • 1 bank 2M x 64, 2M x 72 organisation
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64-Bit
72-Bit
HYS64V2000GU
HYS72V2000GU
HYS64
V2000GU
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SIEMENS NH FUSE
Abstract: siemens M20 3ld22 siemens VDE 0660 manual
Text: Siemens AG 2007 17 SENTRON Switching and Protection Devices – Switch Disconnectors 17/4 17/8 17/10 17/13 17/16 17/17 17/18 17/19 17/21 17/24 17/26 17/29 Introduction 3KA, 3KE, 3LD Switch Disconnectors 3KA, 3KE Switch Disconnectors up to 1000 A General data
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3NJ49
11-3AA00
NSE00256
NSE00254
NSE00253
12-1DA02
18-0DA02
3NJ59
SIEMENS NH FUSE
siemens M20
3ld22
siemens VDE 0660 manual
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Untitled
Abstract: No abstract text available
Text: SIEMENS 3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module HYS64V40 1 20GU HYS72V40(1)20GU 168 pin unbuffered DIMM Modules Advanced Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Module • 2 bank 4M x 64, 4M x 72 organisation
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64-Bit
72-Bit
HYS64V40
HYS72V40
Sequen14
HYS64
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS 3.3V 4M x 64-Bit SDRAM Module 3.3V 4M x 72-Bit SDRAM Module HYS64V4000GU HYS72V4000GU 168 pin unbuffered DIMM Modules Prelim inary Inform ation • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Module • 1 bank 4M x 64, 4M x 72 organisation
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64-Bit
72-Bit
HYS64V4000GU
HYS72V4000GU
HYS64
V4000GU
DM168-17
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BUZ MOSFET
Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package
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615NV
OT-223
20iemens
B152-H6493-G5-X-7600
BUZ MOSFET
mosfet BUZ 326
BUP 312
BSS 130
BUP 304
bup 313
615n60
BUZ 840
SGU06N60
BUP 307D
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Untitled
Abstract: No abstract text available
Text: ÔÔD » • fl23SbOS 0 0 1 M S 2 2 _ 4 * SIEG SIEMENS A K T IENG ES EL LS CH AF r ~ 3 f~ '/ Main ratings BUZ 25 N-Channel = 100 V Draln-source voltage l'os =» 19 A Continuous drain current h Draln-source on-resistance ^DS on a 0,1 a Description SIPMOS, N-channel, enhancement mode
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fl23SbOS
C67078-A1011-A2
fi23Sfc
fl235b05
BU22S
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BUP101
Abstract: BTS412A buz 607 BTS 304 BUZ 324 BSM181C BTS 413 bsm681f Q62702-S616 62702-S393
Text: Bestellnummern/Ordering Codes Type Ordering code BRT 11 H BRT 11 M B R T 12H BRT 12 H Option 1 BRT 12 H (Option 6) BRT 12 H (Option 7) BRT 12 H (Option 1+6) BRT 12 H (Option 1+7) BRT 12M BRT 1 3 H BRT 1 3 M BRT 21 H BRT 21 M BRT 22 H BRT 22 H (Option 1)
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150GB
0610T
C67078-S3126-A2
C67078-S3133-A2
C67078-S3128-A2
C67078-S3121-A2
C67078-S3120-A2
C67078-S3131-A2
67078-S3115-A2
C67078-S3113-A2
BUP101
BTS412A
buz 607
BTS 304
BUZ 324
BSM181C
BTS 413
bsm681f
Q62702-S616
62702-S393
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PDF
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SPB80N03L
Abstract: spp60n
Text: SIEMENS SPP80N03L SPB80N03L Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/df rated • 175°C operating temperature Type SPP80N03L Vbs 30 V h 80 A SPB80N03L f l DS on @ VGS 0.008 Q
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SPP80N03L
SPB80N03L
SPB80N03L
P-T0220-3-1
P-T0263-3-2
Q67040-S4735-A2
Q67040-S4735-A3
spp60n
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