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    BS 3934 Search Results

    BS 3934 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UPD70F3934BGJA-GAE-G Renesas Electronics Corporation 32-bit Microcontrollers, , / Visit Renesas Electronics Corporation
    UPD70F3934GJA-GAE-G Renesas Electronics Corporation 32-bit Microcontrollers, , / Visit Renesas Electronics Corporation
    UPD70F3934AGJA-GAE-G Renesas Electronics Corporation 32-bit Microcontrollers, , / Visit Renesas Electronics Corporation
    51939-345LF Amphenol Communications Solutions PwrBlade®, Power Connectors, 3ACP Right Angle Header, Solder To Board Visit Amphenol Communications Solutions
    51939-349LF Amphenol Communications Solutions PwrBlade®, Power Connectors, 9P 44S 6P Right Angle Header, Solder To Board Visit Amphenol Communications Solutions
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    BS 3934 Price and Stock

    Martin Sprocket & Gear Inc 50BS39 3/4

    Sprocket, Bored to size, 3/4" bore, 50 chain, 5/8" pitch, 39 teeth, steel | Martin Sprocket & Gear 50BS39 3/4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 50BS39 3/4 Bulk 6 Weeks 1
    • 1 $93.9
    • 10 $89.21
    • 100 $79.82
    • 1000 $79.82
    • 10000 $79.82
    Get Quote

    Martin Sprocket & Gear Inc 40BS39 3/4

    Sprocket, Bored to size, 3/4" bore, 40 chain, 1/2" pitch, 39 teeth, steel | Martin Sprocket & Gear 40BS39 3/4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 40BS39 3/4 Bulk 6 Weeks 1
    • 1 $76.86
    • 10 $76.86
    • 100 $76.86
    • 1000 $76.86
    • 10000 $76.86
    Get Quote

    BS 3934 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RGM22S

    Abstract: RGP22S melservo renishaw interface mitsubishi rs422 Renishaw RGH22 RGH26Q rgh22 RGH26P Renishaw
    Text: L-9517-9106-01-A RGH26 series - serial communications readhead system • Non-contact open optical system · Integral interpolation · Mitsubishi compatible serial communications · Maximum speed up to 6m/s · Resolutions from 5µm to 0.5µm · Integral reference and dual limit sensors


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    L-9517-9106-01-A RGH26 RGH26P RGH26Q RGH26R RGM22S RGP22S melservo renishaw interface mitsubishi rs422 Renishaw RGH22 rgh22 Renishaw PDF

    SO42

    Abstract: SKN 21 DB317 Semikron SKR 21 SKN4 V4-28 skn4508 SKN 170 semikron sk 240
    Text: s e M IK R D n If r m s V rsm 80 A V rrm FAV sin. 180; 50 A (118 °C V $ Rectifier Diodes (maximum values for continuous operation) | 150 A & $ SKN 45 SKN 70 SKN 71 •) 95 A (100 °C) Teas — • - $ $ SKR 45 SKR 70 SKR 71 $ 200 SKN45/02 SKR45/02 SKN70/02 SKR70/02 SKN71/02* SKR71/02*


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    13tab71 00Db31S SKN45/02 SKR45/02 SKN70/02 SKR70/02 SKN71/02* SKR71/02* SKN45/04 SKR45/04 SO42 SKN 21 DB317 Semikron SKR 21 SKN4 V4-28 skn4508 SKN 170 semikron sk 240 PDF

    ZTX313

    Abstract: BSV26 ZTX314 BSV27 ZTX312 2TX313 ferranti FERRANTI ELECTRONICS BSV25 ZTX310
    Text: NPN Silicon Planar High Speed Switching Transistors DESCRIPTION These are plastic encapsulated transistors specifically designed for high speed sw itching applications and are also useful where very short storage times and low capacitance are required. The E-line package is formed by injection moulding a


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    O-5/39 8-Munich-22, ZTX313 BSV26 ZTX314 BSV27 ZTX312 2TX313 ferranti FERRANTI ELECTRONICS BSV25 ZTX310 PDF

    SO42

    Abstract: skn 220 semikron SKN 71 so 32 skn4508
    Text: s e MIKRDN Rectifier Diodes Ifrm s m axim um values for continuous operation IV r s m 80 A V rrm I 150 A SKN 45 SKN 70 SKN 71 IfaV (sin. 1 8 0 ; Tease = • ■ ■) V 5 0 A (1 1 8 °C ) 9 5 A (1 0 0 ° C ) 200 SKN 45/02 SKR 45/02 SKN 70/02 SKR 70/02 SKN 71/02 SKR 71/02*


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    SO-32 D0-203 SO-29 DO-205 D0-205 D0-30 SO-42 SO42 skn 220 semikron SKN 71 so 32 skn4508 PDF

    SKN45/06

    Abstract: No abstract text available
    Text: s e MIKRON Rectifier Diodes Ifrms maximum values for continuous operation 80 A | 150 A Vrsm Vrrm fav 50 A (118 °C) V $ $ SKN 45 SKN 70 SKN 71 (sin. 180; Tease = •• ■) 95 A (100 °C) $ $ $ SKR 45 SKR 70 SKR 71 200 SKN45/02 SKR45/02 SKN70/02 SKR70/02 SKN71/02* SKR71/02*


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    SKN45/02 SKR45/02 SKN70/02 SKR70/02 SKN71/02* SKR71/02* SKN45/04 SKR45/04 SKN70/04 SKR70/04 SKN45/06 PDF

    ZTX212

    Abstract: ZTX213 ZTX214 so95 BC212 BS9365 SO-94 of transistors ztx21
    Text: • PNP Silicon Planar General Purpose Transistors 3 5 1 - q i P h D ES C R IP T IO N These are plastic encapsulated general purpose tra n sisto rs designed for sm all and medium signal am plificatio ns from d.c. to radio frequencies. A pplication areas include : Audio


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    ZTX212 ZTX213 ZTX214 SO-94 SO-97 O-5/TO-39 ZTX214 so95 BC212 BS9365 SO-94 of transistors ztx21 PDF

    AM 22A 1043

    Abstract: i6b3 i2Ap J403 MINI CKTS cr 6224 T 5566-NB6S
    Text: 10 LO C\J 8 6 4 2 2 6 2 8 4 8 6 4 B 8 6 4 2 A 5 i_i T j e □ 0 0 0 6 7 0 I_I □ 0 0 0 0 0 0 0 r ii h 12 0 83 enÌ i_i 1 is is 0 0 0 0 0 0 0 0 0 am I_I 2 0 3 4H 22 1 OU 000000 0 0 0 0 0 0 2m *000000000000 B 0 0 0 0 0 0 0000000 000000000000 2m 1


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    34/4/Zffl SD-5566-N* AM 22A 1043 i6b3 i2Ap J403 MINI CKTS cr 6224 T 5566-NB6S PDF

    BCY69

    Abstract: 2t80 GQ017
    Text: ZETEX SEMICONDUCTORS 32C D H ^70570 GQ017S7 3 2 C 0 1757 D ! 2 ~ ~ T ~ Z 7 -ô L_ NPN G EN ER A L PU R P O S E - Continued Type Vc b Max VCEO lc V V mA Max VcE sat at V hFE lc mA Ib mA M in fj at at Ptat a* *l"amb Package =25°C Min Max lc lc mA MHz mA mW


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    GQ017S7 1000t 2N4037 2N1131 2N1132 BC177 BCY79 T0-18 GDD17b7 BCY69 2t80 GQ017 PDF

    BS3934

    Abstract: SO-12A
    Text: ZETEX SEMICONDUCTORS 1 35C m e}C,7D570 DDDJ* 32C 01 760 c ~ T35"-o / NPN SW ITCHIN G - continued Type Max v CEO 'c mA V hFE Max VcE sat at V at •c mA >B mA Mm Max lc mA fx Min at Switching Times (Max) at *on ns toff ns 'c mA Package Comple­ ment MHz lc


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    7D570 BFY51 2N2218 2N2219 2N2220 2N2221 2N2222 BFY52 2N706A 2N2477 BS3934 SO-12A PDF

    D2BS

    Abstract: No abstract text available
    Text: S E M IK R D N V rsm V rrm If a v 200 5A SKN 5/02 - 400 SKN 2,5/04 SKN 5/04 800 SKN 2,5/08 SKN 5/08 1200 SKN 2,5/12 SKN 5/12 1600 SKN 2,5/16 SKN 5/16 SKN 2,5 Symbol Conditions T Vj = 2 5 °C = = = 1 8 0 °C T Vj i2t T vj Tvj Vf V TO rr 2 ,5 120 2 ,4 10 ms


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    SO-16* SKR20 SO-31 SKR26 S0-10 D0-203 D2BS PDF

    Untitled

    Abstract: No abstract text available
    Text: 5 bE ]> • cH 7 05 7 fl G00LiT3b ATM ■ Z E T B ZETEX SEMICONDUCTORS Max VCE sat| t ^BLE Max •c V mA M PS2907A 60 600 BCY77P 60 100 0.25 10 0.25 120 460 2 180* 10 85 150 10 BCY65EP BCY79P 45 200 0.25 10 0.25 120 460 2 180* 10 85 150 10 BCY59P 2N4403 40


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    G00LiT3b PS2907A BCY77P BCY65EP BCY79P BCY59P 2N4403 2N4401 2N4402 PS2907 PDF

    Untitled

    Abstract: No abstract text available
    Text: SbE ]> • TT7057Ô 0DDbT37 730 « Z E T B ZETEX TABLE 5 : NPN LOW NOISE SEMI CONDUCTORS The transistors in this table are characterised for low noise, low level amplification and are ideally suited for audio pre-amplifiers as well as universal applications.


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    TT7057Ã 0DDbT37 BCY65EP BCY77P 2N5209 2N5086 2N5210 SO-94 SO-95 SO-97 PDF

    Ferranti

    Abstract: FERRANTI ELECTRIC mps a14 MPS-A13 mps a12 zo 107 NA 9374 FERRANTI ELECTRONICS MPS 624 MPS-A12
    Text: DESCRIPTION These N P N s ilic o n d a r lin g to n a m p l if i e r t ra n s is to rs o f f e r high g ain and in p u t im p e d a n c e f o r p r e - a m p l if ie r in p u t a p p lic a tio n s . T h e E -lin e p a c k a g e is f o r m e d by in je c tio n m o u ld in g a


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    O-5/39 MPS-A12 A13/A14 S68038 8-Munich-22. Ferranti FERRANTI ELECTRIC mps a14 MPS-A13 mps a12 zo 107 NA 9374 FERRANTI ELECTRONICS MPS 624 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5bE ]> • TTTGSTfl DGDb^fl b? M Z E T B TABLE 6 : PNP LOW NOISE ZETEX SEMICONDUCTORS The transistors in this table are characterised level cterised for low noise, low le v e l;amplification and are ideally suited for audio pre-amplifiers as well as universal applications.


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    2N5209 2N5210 BC550P 200INES SO-94 SO-95 SO-97 SO-96 PDF

    2TX650

    Abstract: BFS97 BFS98 ZTX337 ZTX338 ZTX452 MPSA06 MPSA56 ZTX451 ZTX454
    Text: 5bE D m In ? Q S ? ñ 00DbT3T S03 • Z E T B TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities of 1000mW at 25 °C ambient temperature.


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    ZTX4555 ZTX555 ZTX454 ZTX554 ZTX4535 ZTX553 ZTX452 SO-94 SO-95 SO-97 2TX650 BFS97 BFS98 ZTX337 ZTX338 MPSA06 MPSA56 ZTX451 PDF

    2TX650

    Abstract: zetex transistors TO92 BF493 ZTX458 ZTX558 ZTX758 BF392 BF393 MPSA92 ZTX658
    Text: SbE » • ^70570 DGDb^M2 GTfl H Z E T B T -'Z /l-O l TABLE 13 : NPIU/PNP HIGH VOLTAGE TRANSISTORS The transistors shown in this table are designed for driving numerical indicator tubes, neon lamps and other applications requiring high voltage capability.


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    ZTX658 ZTX758 ZTX458 ZTX558 ZTX6575 ZTX757 MPSA42S MPSA92 BF393 BF493 2TX650 zetex transistors TO92 BF493 ZTX558 ZTX758 BF392 MPSA92 PDF

    CD 9088

    Abstract: AGS-210-TA 5566-02AGS-TA SD-5566-002 5566-N SD-5566-N 39-53-9249 cr 6224 T 5566-02A iobpb-2
    Text: 10 5 1.6 47 .4 4 3 .2 39 34 .8 30 .6 26 .4 22 .2 I8 I3 .8 9 .6 5 .4 46 .2 42 37 .8 33 .6 29 .4 25 .2 2I I6 .8 I2 .6 8 .4 4 .2 — 24 22 20 I8 I6 I4 I2 IO 8 6 4 2 DIM. B DIM. A CKT. SIZE 3 I i \ W \ — a — I 2 [ S Ü 3 ^ Tijfr irjfirj Tîijhë nrlnrl -a -


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    to74

    Abstract: TAA530 220bfy
    Text: TAA530 QUAD M.O.S.T. Quadruple p-channel oxide silicon transistors (Dev. No. 220BFY) 7 DEVELOPM ENT SAM PLE DATA T h is m onolithic integrated c irc u it co m p rises four m atched P -c h a n n e l, enhancement type, insulated gate field effect tra n s is to rs . T h is device is


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    TAA530 220BFy) TAA530 10-lead S0-44B/SB10-1 to74 220bfy PDF

    fu 9024

    Abstract: bu 5027 yt 5188 FU 9024 N 5566-02AS-210 20A400 086s MOLEX mxj a2 5566 molex 5566-02A
    Text: 10 I IY IZ I 5 47 43 39 34 30 26 22 8 3 9 5 6 4 2 8 6 4 2 8 6 4 DIM B 46 42 37 33 29 25 2 6 2 8 4 2 n 7 7] 0 5 -iJ 24 22 20 8 6 4 2 IO 8 6 4 2 8 6 4 2 8 6 4 2 DIM A 0 0 0 0 n 0 7 0 0 6 T0 00000 00000 00000000 10 CKTS. I6 CKTS. CKTS. 000000 000000 0 0 7 F ii 5 7 7 »IM


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    8II91 S000000 MATE66-NAPB -04AGS 5566-02AGS 566-02A 5566-NA 5566-NAÂ fu 9024 bu 5027 yt 5188 FU 9024 N 5566-02AS-210 20A400 086s MOLEX mxj a2 5566 molex 5566-02A PDF

    2TX650

    Abstract: zetex ZTX360 2N39045 2N4125 TRANISTOR 2N4400 2N4401 2N4402 2N4403 BCY59P BCY65EP
    Text: SbE D • ^ c]7QS7fl GOGt.'igS Tbfl « Z E T B TABLE 3 : NPN SWITCHING T -3 5 - s / M a x V CE sat| T yp e V CEO V M ax 'c mA M in f-i- M ax. S w itch in g T im es at at at 'c mA •b M in M ax 'c 'c 'on mA m A M H z m A ns at C om plem ent V toff ns lc mA


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    Tc17GS7fl BCY65EP BCY77P BCY59P BCY79P ZTX360 MPS2222A5 MPS2907A 2N4401 2N4403 2TX650 zetex ZTX360 2N39045 2N4125 TRANISTOR 2N4400 2N4402 2N4403 PDF

    LT 9228

    Abstract: lt 6228 tny 604 lt 6224 CD 9088 5566-06a st 6062 5566-NA-GR mxj 2 connector tin 606
    Text: 10 5 1.6 47 .4 4 3 .2 39 34 .8 30 .6 26 .4 22 .2 I8 I3 .8 9 .6 5 .4 46 .2 42 37 .8 33 .6 29 .4 25 .2 2I I6 .8 I2 .6 8 .4 4 .2 — 24 22 20 I8 I6 I4 I2 IO 8 6 4 2 DIM. B DIM. A CKT. SIZE 3 I i \ W \ — a — I 2 [ S Ü 3 ^ Tijfr irjfirj Tîijhë nrlnrl -a -


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    Untitled

    Abstract: No abstract text available
    Text: SEMIKRON INC 3bE D • fll3bh71 OOGStiST 2 « S E K G SEMIKRON Ifrm s maximum values fo r continuous operation V rsm 5A V rrm | I f a v (sin. 10A SKN 2,5 SKN 5 180;Tamb = 45 °C) V 2,5 A 5A 200 400 800 1200 1600 SKN 2,5/02 SKN 2,5/04 SKN 2,5/08 SKN 5/02


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    fll3bh71 fll3bb71 013bb71 SKN20 SO-31 SO-10 DO-203 PDF

    SKT10/04C

    Abstract: No abstract text available
    Text: _J1E I> • fll3bti71 G0034bfci MAT S E rîIK R 0 iT i n c ' V rsm V rrm V drm *L Itrms (maximum values for continuous operation) 30 A Vdt/or | 40 A | 50 A ItAV (sin. 180; Tease = . ,°C) V V V/|1S 500 700 400 600 900 800 200 200 500 200 500 500 200 500


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    fll3bti71 G0034bfci SKT16/04C SKT10/08D SKT10/10D G347G B3-11 0DQ3471 O-208 SKT10/04C PDF

    Untitled

    Abstract: No abstract text available
    Text: s e MIKRGN Ifr m s V rsm V rrm Ifa v V sin. 180; Tam b 5A SKN 5/02 - 400 SKN 2,5/04 SKN 5/04 800 SKN 2,5/08 SKN 5/08 1200 SKN 2,5/12 SKN 5/12 1600 SKN 2,5/16 SKN 5/16 Symbol Conditions 45 °C; sin. 180 rec. 120 I fav Tamb = I fsm Tvj = Tvj = i2t T Vj = Tvj =


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    SKN20 SKR20 SO-31 SKN26 SKR26 S0-10 D0-203 PDF