BS107A
Abstract: BS107 MOTOROLA
Text: MOTOROLA Order this document by BS107/D SEMICONDUCTOR TECHNICAL DATA TM OS Switching N-Channel — Enhancement BS107 BS107A 1 DRAIN 3 SOURCE MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage — Continuous — Non-repetitive tp < 50 us Symbol
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BS107/D
BS107
BS107A
BS107A
BS107 MOTOROLA
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TO-92-18RM
Abstract: BS107 VN2010L TO-92-18R
Text: VN2010L/BS107 Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) VN2010L 200 BS107 rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 Features Benefits Applications
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VN2010L/BS107
VN2010L
BS107
O226AA)
P-38283--Rev.
TO-92-18RM
BS107
VN2010L
TO-92-18R
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BS107
Abstract: VN2010L
Text: VN2010L/BS107 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VN2010L 200 BS107 rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 Features Benefits Applications D D
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VN2010L/BS107
BS107
VN2010L
O-226AA)
P-38283--Rev.
15-Aug-94
BS107
VN2010L
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equivalent of BS107
Abstract: BS107 application BS107 vn2010l
Text: VN2010L/BS107 N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) VN2010L 200 BS107 rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 Features Benefits Applications D D D
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VN2010L/BS107
BS107
VN2010L
O-226AA)
P-38283--Rev.
15-Aug-94
equivalent of BS107
BS107 application
BS107
vn2010l
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BS-107C
Abstract: No abstract text available
Text: Tem ic VN2010L/BS107 Siliconix N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number rDS on Max (Ö) V(BR,)DSS Min (V) VN2010L BS107 200 Features v G S (th ) I d (A) (V) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ V GS = 2.8 V 0.8 to 3 0.12 Benefits
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VN2010L/BS107
VN2010L
BS107
P-38283--Rev.
O-226AA)
BS-107C
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Untitled
Abstract: No abstract text available
Text: Temic siiiconix_VN2010L/BS107 N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS VN2010L Mín (V) r DS(on) 200 BS107 Max (Q) Id (A) (V) VGS(th) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12
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VN2010L/BS107
VN2010L
BS107
Su5/94)
O-226AA)
P-38283--
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VN2010L
Abstract: BS107
Text: VN2010L/BS107 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VN2010L 200 BS107 rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 Features Benefits Applications D D
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VN2010L/BS107
BS107
VN2010L
O-226AA)
P-38283--Rev.
15-Aug-94
VN2010L
BS107
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equivalent of BS107
Abstract: BS107 VN2010L BS107 application
Text: VN2010L/BS107 Vishay Siliconix N-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 VN2010L 200 BS107 D D D D D Low On-Resistance: 6 W
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VN2010L/BS107
VN2010L
BS107
O-226AA
O-92-18RM
18-Jul-08
equivalent of BS107
BS107
VN2010L
BS107 application
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BS107 MOTOROLA
Abstract: BS107A BS107
Text: MOTOROLA Order this document by BS107/D SEMICONDUCTOR TECHNICAL DATA TMOS Switching N–Channel — Enhancement BS107 BS107A 1 DRAIN 2 GATE 3 SOURCE MAXIMUM RATINGS Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs
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BS107/D
BS107
BS107A
226AA)
BS107 MOTOROLA
BS107A
BS107
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Untitled
Abstract: No abstract text available
Text: VN2010L/BS107 Vishay Siliconix N-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 VN2010L 200 BS107 D D D D D Low On-Resistance: 6 W
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VN2010L/BS107
VN2010L
BS107
O-226AA
08-Apr-05
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BS107
Abstract: 55C24 VN2010L
Text: VN2010L/BS107 Vishay Siliconix N-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 VN2010L 200 BS107 D D D D D Low On-Resistance: 6 W
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VN2010L/BS107
VN2010L
BS107
O-226AA
O-92-18RM
O-226AA)
S-04279--Rev.
16-Jul-01
BS107
55C24
VN2010L
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ha1100
Abstract: UG-94 bs107
Text: Temic VN2010L/BS107 S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max <Q) VGS(th)(V) Id (A) 10 @ V o s = 4.5 V 0.8 to 1.8 0.19 28 @ V o s = 2.8 V 0.8 to 3 0.12 V N2010L 200 BS107
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VN2010L/BS107
N2010L
BS107
O-226AA)
ug-94
ha1100
UG-94
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BS107
Abstract: MBB692 transistor bs107
Text: DISCRETE SEMICONDUCTORS DATA SHEET BS107 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor
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BS107
SC13b
SCA54
137107/00/01/pp12
BS107
MBB692
transistor bs107
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VN2010L
Abstract: S0427 siliconix marking code BS107
Text: VN2010L/BS107 Vishay Siliconix N-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V (B R )D S S M i n ( V ) r D S (o n) M a x ( Q ) VGS(lh)(V) 10 @ V qs = 4.5 V 0.8 to 1.8 0.19 28 @ V gs = 2.8 V 0.8 to 3 0.12 VN2010L b (A) 200 BS107 Low On-Resistance: 6 £2
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VN2010L/BS107
VN2010L
BS107
O-226AA
O-92-18RM
S-04279--
16-Jul-01
O-226AA)
S-0427
S0427
siliconix marking code
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors BS107 Data sheet status Prelim inary specification date of issue February 1991 N-channel enhancement mode vertical D-MOS transistor FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET PIN CONFIGURATION FEATURES
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BS107
-TO-92
MBB073
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MAM146
Abstract: BP317 BS107 bs107 philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET BS107 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor
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BS107
SC13b
SCA54
137107/00/01/pp12
MAM146
BP317
BS107
bs107 philips
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BS107
Abstract: No abstract text available
Text: BS107 VISHAY N-CHANNEL ENHANCEMENT MODE TRANSISTOR /Li T E M I ri I POWER SEMICONDUCTOR / Features High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets TO-92 Mechanical Data_ • • • • Case: TO-92 Plastic
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BS107
MIL-STD-202,
DS21804
BS107
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Philips DATA Handbook sc07
Abstract: No abstract text available
Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BS107 QUICK REFERENCE DATA FEATURES • Direct interface to C-MOS, TTL, etc • High-speed switching • No secondary breakdown. DESCRIPTION SYMBOL PARAMETER
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BS107
Philips DATA Handbook sc07
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bs107 transistor
Abstract: cr 406 transistor BS107 UCB700 transistor 406 specification
Text: Philips Com ponents BS107 Data sheet status Preliminary specification date of issue February 1991 N-channel enhancement mode vertical D-MOS transistor PINNING - TO-92 variant PIN CONFIGURATION FEATU RES • Direct interface to C-M OS, T T L , etc. • High speed switching
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BS107
MBB073
UCB700
bs107 transistor
cr 406 transistor
BS107
UCB700
transistor 406 specification
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BS107
Abstract: DS21804 vishay bs107
Text: BS107 N-CHANNEL ENHANCEMENT MODE TRANSISTOR Features High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets KM TO-92 Mechanical Data_ • • • • Case: TO-92 Plastic Leads: Solderable per MIL-STD-202, Method 208
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BS107
MIL-STD-202,
DS21804
BS107
vishay bs107
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BS107 FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET PINNING - TO -92 variant PIN CONFIGURATIO N FEATURES PIN • Direct interface to C-M O S, TTL,
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BS107
MBB073
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DA218
Abstract: bs107 transistor BS107
Text: BS107 N–CHANNEL ENHANCEMENT MODE TRANSISTOR Features • · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets E A TO-92 B C Mechanical Data · · · · Case: TO-92 Plastic Leads: Solderable per MIL-STD-202, Method 208
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BS107
MIL-STD-202,
DA21804
DA218
bs107 transistor
BS107
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Untitled
Abstract: No abstract text available
Text: BS107 N–CHANNEL ENHANCEMENT MODE TRANSISTOR Features • · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets E A TO-92 B C Mechanical Data · · · · Case: TO-92 Plastic Leads: Solderable per MIL-STD-202, Method 208
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BS107
MIL-STD-202,
DS21804
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PDF
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Untitled
Abstract: No abstract text available
Text: BS107 N–CHANNEL ENHANCEMENT MODE TRANSISTOR POWER SEMICONDUCTOR Features • • • • High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets E A TO-92 B C Mechanical Data • • • • Case: TO-92 Plastic
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BS107
MIL-STD-202,
DS21804
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