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    BSC03 Price and Stock

    Infineon Technologies AG BSC030N04NSGATMA1

    MOSFET N-CH 40V 23A/100A TDSON
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    Infineon Technologies AG BSC035N04LSGATMA1

    MOSFET N-CH 40V 21A/100A TDSON
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    Infineon Technologies AG BSC030P03NS3GAUMA1

    MOSFET P-CH 30V 25.4/100A 8TDSON
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    Infineon Technologies AG BSC030N03LSGATMA1

    MOSFET N-CH 30V 23A/100A TDSON
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    Infineon Technologies AG BSC030N03MSGATMA1

    MOSFET N-CH 30V 21A/100A TDSON
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    BSC03 Datasheets (36)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BSC0302LSATMA1 Infineon Technologies MOSFET N-CH 120V 12A/99A TDSON Original PDF
    BSC0303LSATMA1 Infineon Technologies TRENCH >=100V PG-TDSON-8 Original PDF
    BSC030N03LS G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.0 mOhm; RDS (on) (max) (@4.5V): 4.7 mOhm; ID (max): 100.0 A; Original PDF
    BSC030N03LSGATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 100A TDSON-8 Original PDF
    BSC030N03MS G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.0 mOhm; RDS (on) (max) (@4.5V): 3.8 mOhm; ID (max): 100.0 A; Original PDF
    BSC030N03MSGATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 100A TDSON-8 Original PDF
    BSC030N04NS G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 3.0 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 100.0 A; Original PDF
    BSC030N04NSGATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TDSON-8 Original PDF
    BSC030N08NS5ATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 80V 100A 8TDSON Original PDF
    BSC030P03NS3 G Infineon Technologies P-Channel MOSFETs; Package: PG-TDSON-8; Package: SuperSO8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 3.0 mOhm; RDS (on) (max) (@4.5V): -; RDS (on) (max) (@2.5V): -; Original PDF
    BSC030P03NS3GAUMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 30V 100A TDSON-8 Original PDF
    BSC031N06NS3 G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.1 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 100.0 A; Original PDF
    BSC031N06NS3GATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 100A TDSON-8 Original PDF
    BSC032N03S Infineon Technologies TRANS MOSFET N-CH 30V 50A 8P-TDSON-8 Original PDF
    BSC032N03S Infineon Technologies OptiMOS2 Power-Transistor Original PDF
    BSC032N03SG Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 100A TDSON-8 Original PDF
    BSC032N03S G Infineon Technologies TRANS MOSFET N-CH 30V 23A 8TDSON-8 Original PDF
    BSC032N04LSATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 21A 8TDSON Original PDF
    BSC032NE2LS Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V 22A TDSON-8 Original PDF
    BSC032NE2LSATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 25V 22A TDSON-8 Original PDF

    BSC03 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    32n03

    Abstract: 32N03S BSC032N03S JESD22
    Text: BSC032N03S OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 3.2 mΩ ID 50 A 1 • Qualified according to JEDEC for target applications • N-channel


    Original     		BSC032N03S Q67042-S4219 32N03S 32n03 32N03S BSC032N03S JESD22 PDF

    039N06NS

    Abstract: marking NC
    Text: Type BSC039N06NS OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel 1 • Qualified according to JEDEC for target applications


    Original     		BSC039N06NS IEC61249-2-21 039N06NS 50K/W 039N06NS marking NC PDF

    Untitled

    Abstract: No abstract text available
    Text: n-Channel Power MOSFET OptiMOS BSC032NE2LS Data Sheet 2.0, 2011-03-01 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSC032NE2LS 1 Description OptiMOS™25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together


    Original     		BSC032NE2LS PDF

    035N04LS

    Abstract: No abstract text available
    Text: BSC035N04LS G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 3.5 mΩ ID 100 A 1) • Qualified according to JEDEC for target applications • N-channel


    Original     		BSC035N04LS 035N04LS 035N04LS PDF

    030N03ls

    Abstract: No abstract text available
    Text: BSC030N03LS G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 3 mΩ ID 100 A 1) • Qualified according to JEDEC for target applications • N-channel


    Original     		BSC030N03LS 030N03LS 030N03ls PDF

    Untitled

    Abstract: No abstract text available
    Text: BSC032N04LS OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance SMPS, e.g. sync. rec. • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested • Superior thermal resistance VDS 40 V RDS(on),max 3.2 mW ID 98


    Original     		BSC032N04LS IEC61249-2-21 032N04LS PDF

    Untitled

    Abstract: No abstract text available
    Text: BSC030N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS 30 V V GS=10 V 3 mΩ V GS=4.5 V 3.8 ID • 100% avalanche tested


    Original     		BSC030N03MS IEC61249-2-21 030N03MS PDF

    Untitled

    Abstract: No abstract text available
    Text: BSC034N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V • Fast switching MOSFET for SMPS RDS on ,max 3.4 mW • Optimized technology for DC/DC converters ID 100 A • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level


    Original     		BSC034N03LS IEC61249-2-21 BSC034N03LSC 034N03LS PDF

    Untitled

    Abstract: No abstract text available
    Text: BSC032NE2LS OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested • Superior thermal resistance VDS 25 V RDS(on),max 3.2 mW ID 84 A QOSS


    Original     		BSC032NE2LS IEC61249-2-21 032NE2LS PDF

    32N03

    Abstract: 32n03s BSC032N03S BSC032N03S G fet 5080 JESD22
    Text: BSC032N03S OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 3.2 mΩ ID 50 A 1 • Qualified according to JEDEC for target applications • N-channel


    Original     		BSC032N03S Q67042-S4219 32N03S 32N03 32n03s BSC032N03S BSC032N03S G fet 5080 JESD22 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSC037N03MSC G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V V GS=10 V 3.7 mΩ V GS=4.5 V 4.8


    Original     		BSC037N03MSC IEC61249-2-21 037N03MS PDF

    BSC030P03NS3

    Abstract: 030P3NS
    Text: BSC030P03NS3 G OptiMOSTM P3 Power-Transistor Product Summary Features • single P-Channel in SuperSO8 • Qualified according JEDEC 1 for target applications V DS -30 V R DS on),max 3.0 mΩ ID -100 A • V GS=25 V, specially suited for notebook applications


    Original     		BSC030P03NS3 030P3NS 030P3NS PDF

    BSC030N04NS

    Abstract: IEC61249-2-21 JESD22 030N04NS
    Text: BSC030N04NS G OptiMOS 3 Power-Transistor Product Summary Features V DS 40 V • Fast switching MOSFET for SMPS R DS on ,max 3.0 mΩ • Optimized technology for DC/DC converters ID 100 A • Qualified according to JEDEC1) for target applications PG-TDSON-8


    Original     		BSC030N04NS IEC61249-2-21 030N04NS IEC61249-2-21 JESD22 030N04NS PDF

    030N03MS

    Abstract: 030N03 BSC030N03MS IEC61249-2-21 JESD22
    Text: BSC030N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS 30 V V GS=10 V 3 mΩ V GS=4.5 V 3.8 ID • 100% avalanche tested


    Original     		BSC030N03MS IEC61249-2-21 030N03MS 030N03MS 030N03 IEC61249-2-21 JESD22 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSC030N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V V GS=10 V 3 mΩ V GS=4.5 V 3.8 ID • N-channel


    Original     		BSC030N03MS 030N03MS PDF

    030N03MS

    Abstract: BSC030N03MS JESD22 BSC030N03MS G 030N03 GS2575
    Text: BSC030N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V V GS=10 V 3 mΩ V GS=4.5 V 3.8 ID • N-channel


    Original     		BSC030N03MS 030N03MS 030N03MS JESD22 BSC030N03MS G 030N03 GS2575 PDF

    030N04NS

    Abstract: FET 4900 BSC030N04NS JESD22 PG-TDSON-8 BSC030N04NS G D49 MARKING
    Text: BSC030N04NS G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 3.0 mΩ ID 100 A 1) • Qualified according to JEDEC for target applications • N-channel


    Original     		BSC030N04NS 030N04NS 030N04NS FET 4900 JESD22 PG-TDSON-8 BSC030N04NS G D49 MARKING PDF

    030P3NS

    Abstract: IEC61249-2-21 JESD22 JESD22-A114 BSC030P03NS3
    Text: BSC030P03NS3 G OptiMOSTM P3 Power-Transistor Product Summary Features • single P-Channel in SuperSO8 • Qualified according JEDEC 1 for target applications V DS -30 V R DS on),max 3.0 mΩ ID -100 • V GS=25 V, specially suited for notebook applications


    Original     		BSC030P03NS3 IEC61249-2-21 030P3NS 030P3NS IEC61249-2-21 JESD22 JESD22-A114 PDF

    031n06ns

    Abstract: No abstract text available
    Text: Type BSC031N06NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max 3.1 mΩ ID 100 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		BSC031N06NS3 031N06NS 031n06ns PDF

    Untitled

    Abstract: No abstract text available
    Text: BSC034N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V • Fast switching MOSFET for SMPS RDS on ,max 3.4 mW • Optimized technology for DC/DC converters ID 100 A • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level


    Original     		BSC034N03LS IEC61249-2-21 BSC034N03LSC 034N03LS PDF

    Untitled

    Abstract: No abstract text available
    Text: BSC035N04LS G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 3.5 mΩ ID 100 A 1) • Qualified according to JEDEC for target applications PG-TDSON-8


    Original     		BSC035N04LS IEC61249-2-21 035N04LS PDF

    039N06NS

    Abstract: BSC039N06NS NC100A
    Text: Type BSC039N06NS OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 3.9 mW • Superior thermal resistance ID 100 A • N-channel 1) • Qualified according to JEDEC for target applications


    Original     		BSC039N06NS IEC61249-2-21 039N06NS 50K/W 039N06NS BSC039N06NS NC100A PDF

    Untitled

    Abstract: No abstract text available
    Text: BSC030N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V V GS=10 V 3 mΩ V GS=4.5 V 3.8 ID • N-channel


    Original     		BSC030N03MS 030N03MS PDF

    30N03LS

    Abstract: No abstract text available
    Text: BSC030N03LS G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 3 mΩ ID 100 A 1) • Qualified according to JEDEC for target applications • N-channel


    Original     		BSC030N03LS 30N03LS 30N03LS PDF