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    BSC070N10NS3 G Price and Stock

    Infineon Technologies AG BSC070N10NS3GATMA1

    MOSFET N-CH 100V 90A TDSON-8
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    DigiKey BSC070N10NS3GATMA1 Cut Tape 17,858 1
    • 1 $2.71
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    BSC070N10NS3GATMA1 Digi-Reel 17,858 1
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    BSC070N10NS3GATMA1 Reel 16,328 5,000
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    Mouser Electronics BSC070N10NS3GATMA1 15,208
    • 1 $2.37
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    BSC070N10NS3GATMA1 4,910 20
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    BSC070N10NS3GATMA1 2,934 9
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    Arrow Electronics BSC070N10NS3GATMA1 25,000 16 Weeks 5,000
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    BSC070N10NS3GATMA1 2,935 16 Weeks 1
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    Newark BSC070N10NS3GATMA1 Cut Tape 1
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    Rochester Electronics BSC070N10NS3GATMA1 1
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    Infineon Technologies AG BSC070N10NS3 G

    MOSFETs N-Ch 100V 90A TDSON-8 OptiMOS 3
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    Mouser Electronics BSC070N10NS3 G 4,969
    • 1 $1.97
    • 10 $1.64
    • 100 $1.3
    • 1000 $0.939
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    Infineon Technologies AG BSC070N10NS3G

    Trans MOSFET N-CH 100V 92A 8-Pin TDSON EP T/R
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    Verical BSC070N10NS3G 70,000 5,000
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    Bristol Electronics BSC070N10NS3G 141 3
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    Quest Components BSC070N10NS3G 112
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    BSC070N10NS3G 5
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    BSC070N10NS3 G Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BSC070N10NS3G Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 90A TDSON-8 Original PDF
    BSC070N10NS3GATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 90A TDSON-8 Original PDF

    BSC070N10NS3 G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BSC070N10NS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS • Very low gate charge for high frequency applications • Optimized for dc-dc conversion 100 V RDS on ,max 7 mW ID 90 A • N-channel, normal level PG-TDSON-8 • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF BSC070N10NS3 IEC61249-2-21 070N10NS

    BSC070N10NS3

    Abstract: 070n10ns IEC61249-2-21 JESD22 BSC070N10NS3 G
    Text: BSC070N10NS3 G OptiMOSTM3 Power-Transistor Product Summary Features V DS • Very low gate charge for high frequency applications • Optimized for dc-dc conversion 100 V R DS on ,max 7 mΩ ID 90 A • N-channel, normal level PG-TDSON-8 • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF BSC070N10NS3 IEC61249-2-21 070N10NS 070n10ns IEC61249-2-21 JESD22 BSC070N10NS3 G

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF

    TLE4957C

    Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
    Text: Ask Infineon. Get connected with the answers. Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Our global connection service goes way beyond standard switchboard services by offering qualified support on the phone. Call us!


    Original     		PDF