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    Nexperia BSH105,215

    MOSFET N-CH 20V 1.05A TO236AB
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    DigiKey BSH105,215 Cut Tape 374,292 1
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    BSH105,215 Digi-Reel 374,292 1
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    BSH105,215 Reel 373,550 3,000
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    BSH105,215 Reel 12,000 3,000
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    Rochester Electronics BSH105,215 2,700 1
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    Nexperia BSH105,235

    MOSFET N-CH 20V 1.05A TO236AB
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    DigiKey BSH105,235 Reel 50,000 10,000
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    Nexperia BSH103,235

    MOSFET N-CH 30V 850MA TO236AB
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    DigiKey BSH103,235 Cut Tape 41,876 1
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    BSH103,235 Digi-Reel 41,876 1
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    Nexperia BSH103,215

    MOSFET N-CH 30V 850MA TO236AB
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    DigiKey BSH103,215 Digi-Reel 12,162 1
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    BSH103,215 Cut Tape 12,162 1
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    Mouser Electronics BSH103,215 136,323
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    BSH103,215 Cut Tape 912 1
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    Quest Components BSH103,215 88
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    Nexperia BSH103BKR

    BSH103BK - 30 V, N-CHANNEL TRENC
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    DigiKey BSH103BKR Cut Tape 10,286 1
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    BSH103BKR Reel 9,000 3,000
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    Mouser Electronics BSH103BKR 14,829
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    BSH10 Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BSH-100-01-L-D-DP-EM2 Samtec Connectors, Interconnects - Rectangular Connectors - Arrays, Edge Type, Mezzanine (Board to Board) - .5MM DOUBLE ROW SOCKET ASSEMBLY Original PDF
    BSH101 Philips Semiconductors N-Channel Enhancement Mode MOS Transistor Original PDF
    BSH101 Philips Semiconductors N-channel enhancement mode MOS transistor Original PDF
    BSH102 Philips Semiconductors N-Channel Enhancement Mode MOS Transistor Original PDF
    BSH102 Philips Semiconductors N-channel vertical D-MOS transistor Original PDF
    BSH103 Philips Semiconductors N-channel enhancement mode MOS transistor Original PDF
    BSH103,215 NXP Semiconductors N-channel enhancement mode MOS transistor - Configuration: Single N-channel ; ID DC: 0.85 A; Qgd (typ): 0.67 nC; RDS(on): [email protected]@2.5V mOhm; VDSmax: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
    BSH103,235 NXP Semiconductors N-channel enhancement mode MOS transistor - Configuration: Single N-channel ; ID DC: 0.85 A; Qgd (typ): 0.67 nC; RDS(on): [email protected]@2.5V mOhm; VDSmax: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
    BSH103BKR Nexperia BSH103BK - 30 V, N-CHANNEL TRENC Original PDF
    BSH103T Philips Semiconductors Transistor Mosfet N-CH 30V 0.85A 3 pin SOT-23 T/R Original PDF
    BSH103/T3 Philips Semiconductors Transistor Mosfet N-CH 30V 0.85A 3 pin SOT-23 T/R Original PDF
    BSH103T3 Philips Semiconductors N-channel enhancement mode MOS transistor Original PDF
    BSH103T/R Philips Semiconductors Transistor Mosfet N-CH 30V 0.85A 3 pin SOT-23 T/R Original PDF
    BSH104 Philips Semiconductors N-channel enhancement mode MOS transistor Original PDF
    BSH105 General Semiconductor MOSFET, Enhancement Mode, N Channel, SOT-23, 3-Pin Original PDF
    BSH105 Philips Semiconductors N-channel enhancement mode MOS transistor Original PDF
    BSH105,215 NXP Semiconductors N-channel enhancement mode MOS transistor - Configuration: Single N-channel ; ID DC: 1.05 A; Qgd (typ): 1.4 nC; RDS(on): [email protected]@2.5V mOhm; VDSmax: 20 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
    BSH105,235 NXP Semiconductors N-channel enhancement mode MOS transistor - Configuration: Single N-channel ; ID DC: 1.05 A; Qgd (typ): 1.4 nC; RDS(on): [email protected]@2.5V mOhm; VDSmax: 20 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
    BSH105T Philips Semiconductors Transistor Mosfet N-CH 20V 1.05A 3 pin SOT-23 T/R Original PDF
    BSH105T/R Philips Semiconductors Transistor Mosfet N-CH 20V 1.05A 3 pin SOT-23 T/R Original PDF

    BSH10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BP317

    Abstract: BSH104 pc 817 smd
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSH104 N-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1997 Nov 26 Philips Semiconductors Objective specification N-channel enhancement mode


    Original
    PDF M3D088 BSH104 SC13b SCA56 137107/00/01/pp8 BP317 BSH104 pc 817 smd

    BSH105

    Abstract: SC18
    Text: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES BSH105 SYMBOL • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package QUICK REFERENCE DATA VDS = 20 V


    Original
    PDF BSH105 BSH105 SC18

    BSH101

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BSH101 N-channel enhancement mode MOS transistor Preliminary specification File under Discrete Semiconductors, SC13b 1997 Jun 19 Philips Semiconductors Preliminary specification N-channel enhancement mode MOS transistor BSH101


    Original
    PDF BSH101 SC13b BSH101 MAM273 SCA54 137107/00/01/pp8

    BSH103 MARKING

    Abstract: TRANSISTOR SMD MARKING CODE DK BSH103 TRANSISTOR SMD CODE 339 marking code UL SMD Transistor 339 marking code SMD transistor MBK504 smd transistor 547 transistor smd .PB 8 transistor smd PB 8
    Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D088 BSH103 N-channel enhancement mode MOS transistor Product specification Supersedes data of 1998 Jan 30 File under Discrete Semiconductors, SC13b 1998 Feb 11 Philips Semiconductors Product specification


    Original
    PDF M3D088 BSH103 SC13b MAM273 BSH103 BSH103 MARKING TRANSISTOR SMD MARKING CODE DK TRANSISTOR SMD CODE 339 marking code UL SMD Transistor 339 marking code SMD transistor MBK504 smd transistor 547 transistor smd .PB 8 transistor smd PB 8

    BSH101

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D088 BSH101 N-channel enhancement mode MOS transistor Product speciÞcation Supersedes data of 1997 Nov 28 File under Discrete Semiconductors, SC13b 2000 Jul 19 Philips Semiconductors Product specification


    Original
    PDF M3D088 BSH101 SC13b SCA56 137107/00/02/pp12 BSH101

    BSH108

    Abstract: 03ab10 MSB003 transistor 8722
    Text: BSH108 N-channel enhancement mode field-effect transistor Rev. 02 — 25 October 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original
    PDF BSH108 M3D088 BSH108 03ab10 MSB003 transistor 8722

    BSH103

    Abstract: MBK504
    Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D088 BSH103 N-channel enhancement mode MOS transistor Product specification Supersedes data of 1998 Jan 30 File under Discrete Semiconductors, SC13b 1998 Feb 11 Philips Semiconductors Product specification


    Original
    PDF M3D088 BSH103 SC13b SCA57 135108/00/04/pp12 BSH103 MBK504

    BSH103

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT andbook, halfpage M3D088 BSH103 N-channel enhancement mode MOS transistor Product specification Supersedes data of 1998 Jan 30 File under Discrete Semiconductors, SC13b 1998 Feb 11 Philips Semiconductors Product specification N-channel enhancement mode


    Original
    PDF M3D088 BSH103 SC13b SCA57 135108/00/04/pp12 BSH103

    Untitled

    Abstract: No abstract text available
    Text: BSH108 N-channel enhancement mode field-effect transistor Rev. 01 — 06 September 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original
    PDF BSH108 M3D088 BSH108 MSB003 MBB076

    2092 tsop6

    Abstract: BSH107 SOT457 N-Channel
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 BSH107 N-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1997 Nov 26 Philips Semiconductors Objective specification N-channel enhancement mode


    Original
    PDF M3D302 BSH107 SC13b OT457 SCA56 137107/00/01/pp8 2092 tsop6 SOT457 N-Channel

    js sot23

    Abstract: BSH102 MGH-20
    Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D088 BSH102 N-channel enhancement mode MOS transistor Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13b 1997 Dec 08 Philips Semiconductors Product specification


    Original
    PDF M3D088 BSH102 SC13b SCA56 137107/00/02/pp12 js sot23 BSH102 MGH-20

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


    Original
    PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent

    BSH101

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D088 BSH101 N-channel enhancement mode MOS transistor Product specification Supersedes data of 1997 June 19 File under Discrete Semiconductors, SC13b 1997 Nov 28 Philips Semiconductors Product specification


    Original
    PDF M3D088 BSH101 SC13b SCA56 137107/00/02/pp12 BSH101

    TRANSISTOR SMD MARKING CODE 42

    Abstract: TRANSISTOR SMD MARKING CODE 45 TRANSISTOR SMD MARKING CODE UA TRANSISTOR SMD CODE PACKAGE SOT363 transistor smd code marking nc TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 152 smd transistor catalog SMD Transistor Marking Code 71
    Text: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES BSH106 SYMBOL • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package QUICK REFERENCE DATA VDS = 20 V


    Original
    PDF BSH106 BSH106 OT363 OT363 TRANSISTOR SMD MARKING CODE 42 TRANSISTOR SMD MARKING CODE 45 TRANSISTOR SMD MARKING CODE UA TRANSISTOR SMD CODE PACKAGE SOT363 transistor smd code marking nc TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 152 smd transistor catalog SMD Transistor Marking Code 71

    BSH105

    Abstract: BSH106
    Text: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES BSH106 SYMBOL • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package QUICK REFERENCE DATA VDS = 20 V


    Original
    PDF BSH106 OT363 BSH106 BSH105

    MARKING CODE B05

    Abstract: MOSFET N-Channel 1a vgs 0.9 sot-23
    Text: BSH105 Vishay Semiconductors New Product formerly General Semiconductor N-Channel Enhancement-Mode MOSFET TO-236AB SOT-23 .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) 0.035 (0.9) 0.079 (2.0) 0.037 (0.95) 0.037 (0.95)


    Original
    PDF BSH105 O-236AB OT-23) OT-23 10-Dec-01 MARKING CODE B05 MOSFET N-Channel 1a vgs 0.9 sot-23

    03ab10

    Abstract: No abstract text available
    Text: BSH108 N-channel enhancement mode field-effect transistor Rev. 02 — 25 October 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original
    PDF BSH108 M3D088 BSH108 03ab10

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification N-channel enhancement mode MOS transistor BSH107 PINNING FEATURES • High-speed switching PIN SYMBOL • No secondary breakdown 1 d drain • Direct interface to C-MOS, TTL, etc. 2 d drain • Very low threshold.


    OCR Scan
    PDF BSH107 OT457

    MOSFET SOT-23 marking code 122

    Abstract: No abstract text available
    Text: < X>G e n e r a l v BSH105 S e m ic o n d u c t o r % N-Channel Enhancement-Mode MOSFET Vds 2 0 V Rds(ON 0.25Q Id 1.05A TO-236AB (SOT-23) •122(3.1) 0.031 (0.8) .110 2.8 .01 3(C -4) Hh Top View T -^p- 0.035(0.9) u? in o Pin Configuration 1. Gate 2. Source


    OCR Scan
    PDF BSH105 O-236AB OT-23) OT-23 00A/jUS MOSFET SOT-23 marking code 122

    722 smd transistor

    Abstract: N-channel mos sot23
    Text: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor BSH101 FEATURES PINNING - SOT23 • Very low threshold PIN SYMBOL DESCRIPTION • High-speed switching 1 • No secondary breakdown 2 9 s source • Direct interface to C-MOS, TTL etc.


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    PDF BSH101 722 smd transistor N-channel mos sot23

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES BSH106 QUICK REFERENCE DATA SYMBOL d • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package V qs = 20 V


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    PDF BSH106 BSH106 OT363 OT363

    ld smd transistor LD 33

    Abstract: BSH105N
    Text: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES BSH105 SYMBOL QUICK REFERENCE DATA • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package v ns = 20 V


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    PDF BSH105 BSH105 ld smd transistor LD 33 BSH105N

    SOT457 N-Channel FD

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES BSH107 QUICK REFERENCE DATA SYMBOL d • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package V qs = 20 V


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    PDF BSH107 BSH107 OT457 OT457 SOT457 N-Channel FD

    transistor ph 45

    Abstract: No abstract text available
    Text: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BSH105 N-channel enhancement mode MOS transistor 1998 Mar 31 Preliminary specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC13 Philips Semiconductors PHILIPS PHILIPS P h ilip s S e m ic o n d u c t o r s


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    PDF BSH105 135108/00/02/pp8 transistor ph 45