BSIM3 CIRCUIT MODEL Search Results

BSIM3 CIRCUIT MODEL Result Highlights (5)

Part	Manufacturer	Description
74VHCT541AFT	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, Octal Buffer, TSSOP20B
74VHC541FT	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, Octal Buffer, TSSOP20B
TC74HC14AF	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, Inverter, SOP14
74HC14D	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, Inverter, SOIC14
74HC04D	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, Inverter, SOIC14

BSIM3 CIRCUIT MODEL Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
bsim3 Abstract: bsim3 circuit model Tech MOS Technology bsim3 model ESSDERC-98 gilbert cell sum harmonicbalance Text: A Large Signal Non-Quasi-Static MOS Model for RF Circuit Simulation A.J. Scholten, L.F. Tiemeijer, P.W.H. de Vreede and D.B.M. Klaassen Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands Phone: +31-40-2742723; Fax: +31-40-2743390; E-mail: [email protected]	Original		PDF
ks fuses Abstract: 0.13um standard cell library analog delay ms BSIM3 10-BIT Text: ASIC Mixed-Signal and Analog Macros M5 M4 M3 Capacitor Resistor M2 M1 Analog VSS P-well N-well Deep N-well P-well N-well Epi Digital VSS/Gnd Analog Circuit Digital Circuit ▼ P-Sub Features ▼ • Leading-edge 0.25µm, 0.18µm, 0.13µm, 90nm, 65nm technologies, with a choice of standard twin-well or high	Original	14-bit, 12-bit, SMS-FS-21295-3/2008 ks fuses 0.13um standard cell library analog delay ms BSIM3 10-BIT	PDF
bsim3 model Abstract: 1000 watt power supply scheme class E power amplifier Class E amplifier capacitor huang bsim3 ADS GSM Transceiver chip single transistor amplifier circuits bsim3 27 Mhz power amplifier Text: Chapter 6 CMOS Class-E Power Amplifier 6.0 Introduction Last few years have seen an increase in the popularity of the wireless communication systems. As a result, the demand for compact, low-cost, and low power portable transceivers has increased dramatically [Gray and Meyer, 1995]. A proposed	Original		PDF
bsim3 model Abstract: "X-Fab" Core cell library CX06 transistors bipolar CMOS spice model PMOS MODEL PARAMETERS SPICE TS16 analog devices transistor tutorials mos15 bsim3 Text: 0.6 m CMOS Process CX06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The CX06 Series is X-FAB‘s 0.6 Micron Modular Mixed Signal Technology. Main target applications	Original		PDF
CMOS Abstract: pmos4 Text: 0.8 µm CMOS Process CX08 MIXED-SIGNAL FOUNDRY EXPERTS 0.8 Micron Modular Mixed Signal Technology Description The CX08 Series is X-FAB‘s 0.8 Micron Modular Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom designs for Industrial, Telecommunication and Automotive products - including the 42V board net.	Original		PDF
SPICE As An AHDL Abstract: analog to digital converter vhdl coding digital to analog converter vhdl coding vhdl coding for analog to digital converter vhdl code for digital to analog converter vhdl code for All Digital PLL IEEE PROGRAMS OR ENGINEERING STUDENT WITH vhdl electronic workbench VHDL code for dac Z-Domain Systems Development Text: SPICE AS AN AHDL Analog and Mixed Signal conference by Charles E. Hymowitz Intusoft San Pedro, CA, 7/94 ABSTRACT This paper will discuss the following questions: Is SPICE an AHDL and is it a viable alternative to currently proposed AHDL languages? Second, should AHDL constructs or SPICE syntax compatibility be the starting point for analog extensions to VHDL?	Original		PDF
0.6 um cmos process Abstract: bsim3 Trench MOS Schottky Rectifier MICRON POWER RESISTOR Mos BSIM3 SOI pmos 60V-20 MICRON RESISTOR Mos MOS RM3 P-Channel Depletion Mosfets Text: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation	Original		PDF
hv2300 Abstract: AXTO bsim3 model for 0.18 micron technology for hspice adc04 x-fabs 0.8um nmos bsim3 model parameters bsim3 model analog devices transistor tutorials analogue digital converter instrumentation delta application instrumentation projects Text: 0.8 m CMOS Process CX08 MIXED-SIGNAL FOUNDRY EXPERTS 0.8 Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The CX08 Series is X-FAB‘s 0.8 Micron Modular Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom	Original		PDF
CMOS Abstract: No abstract text available Text: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications	Original		PDF
CMOS Process Family Abstract: XH018 bsim3 bsim3 0.18 micron parameters analog devices transistor tutorials TRANSISTORS BJT list IMD2 transistor XP018 process flow diagram "X-Fab" Core cell library Text: 0.18 µm CMOS Process Family XP018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron CMOS Power Management Process Technology Description The XP018 series is X-FAB’s 0.18 micron Modular Mixed Signal CMOS Power Management Technology. Based upon the industrial standard single	Original	XP018 XP018 18-micron CMOS Process Family XH018 bsim3 bsim3 0.18 micron parameters analog devices transistor tutorials TRANSISTORS BJT list IMD2 transistor process flow diagram "X-Fab" Core cell library	PDF
nmos transistor 0.35 um Abstract: npn pnp rf transistor bipolar cross reference l24c using a zener diode as a varicap NMOS depletion pspice model bsim3 model for 0.18 micron technology for hspice bsim3 model MOS RM3 QS 100 NPN Transistor analog devices transistor tutorials Text: 0.6 µm BiCMOS Process Family XHB06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular HV BCD Technology Description The XHB06 is X-FAB's 0.6 Micron High-Voltage Bipolar CMOS DMOS BCD Technology, optimized for applications requiring operating voltages of 5V to 30V. Main target applications are power	Original	XHB06 XHB06 nmos transistor 0.35 um npn pnp rf transistor bipolar cross reference l24c using a zener diode as a varicap NMOS depletion pspice model bsim3 model for 0.18 micron technology for hspice bsim3 model MOS RM3 QS 100 NPN Transistor analog devices transistor tutorials	PDF
NMOS depletion pspice model Abstract: NMOS MODEL PARAMETERS SPICE "X-Fab" Core cell library PSPICE MODEL R2R bsim3 ADS bsim3 model SPECTRE MODEL QS 100 NPN Transistor RP20 analog devices transistor tutorials Text: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications	Original		PDF
CMOS spice model Abstract: spice 70E-15 BSIM3 bsim3 model Text: 半導体における設計とプロセスの相関解析 A Correlation Analysis of LSI Circuit Design and Process Technology 渡辺博文* Hirobumi WATANABE 要旨 LSI設計をする際の異なる2つの技術設計とプロセスを繋ぐデザインルール，特にSPICEパラ	Original	VLD97-53 CMOS spice model spice 70E-15 BSIM3 bsim3 model	PDF
XH018 Abstract: sonos MOS RM3 model values for 0.18 micron technology cmos 0.18 um CMOS parameters analog devices transistor tutorials CMOS spice model bsim3 0.18 micron parameters EPI EEPROM bsim3 circuit model Text: 0.18 µm CMOS Process Family XH018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular Mixed Signal HV CMOS Technology Description The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six	Original	XH018 XH018 18-micron sonos MOS RM3 model values for 0.18 micron technology cmos 0.18 um CMOS parameters analog devices transistor tutorials CMOS spice model bsim3 0.18 micron parameters EPI EEPROM bsim3 circuit model	PDF

spice model Tunnel diode Abstract: dpsN TUNNEL DIODE spice model Text: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation	Original		PDF
Untitled Abstract: No abstract text available Text: 0.6 µm BiCMOS Process Family XB06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular BiCMOS Technology Description The XB06 Series is X-FAB‘s 0.6 Micron BiCMOS Technology. Main target applications are RF circuits and high precision analog applications mixed with	Original		PDF
CMOS Abstract: hv 102 mos fet transistor varactor diode model in ADS bsim3 ADS varactor diode 0.18 micron 1.8V pspice model BSIM3V3 bsim3 model bsim3 model for 0.18 micron technology for hspice N-Channel jfet 100V depletion Text: 0.6 m CMOS Process XC06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features The XC06 Series completes X-FAB‘s 0.6 Micron Modular Mixed Signal Technology with embedded Non Volatile Memory and High Voltage options.	Original		PDF
NAND Flash Programmer with TSOP-48 adapter Abstract: INTEL Core i7 860 schematic diagram inverter lcd monitor fujitsu MB506 ULTRA HIGH FREQUENCY PRESCALER fujitsu LVDS vga MB89625R VHDL code simple calculator of lcd display JTag Emulator MB90F497 Millbrook BGA TBA 129-5 Text: Master Product Selector Guide February 2001 Fujitsu Microelectronics, Inc. Contents Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Application Specific ICs ASICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3	Original		PDF
lm 7803 Abstract: BT 815 transistor 32nm matching p735 AL 5052 MD8253A bsim3 model BSIM Text: Gate current: Modeling, AL extraction and impact on RF performance R. van Langevelde, A.J. Schölten, R. Duffy, F.N. Cubaynes, M.J. Knitel and D.B.M. Klaassen Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands Phone: +31-40-2742418; Fax: +31-40-2744113; E-mail: [email protected]	OCR Scan	B-3001 net/1999 292-IEDM lm 7803 BT 815 transistor 32nm matching p735 AL 5052 MD8253A bsim3 model BSIM	PDF
bsim3 0.18 micron parameters Abstract: bsim3 model ESSDERC-98 Text: Impact of Process Scaling on 1/f Noise in Advanced CMOS Technologies MJ. Knitel, P.H. Woerlee, A.J. Schölten, and A.T.A. Zegers-Van Duijnhoven Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands phone: +31-40-2742723; fax: + 31-40-2743390; e-mail: [email protected]	OCR Scan	464-IEDM bsim3 0.18 micron parameters bsim3 model ESSDERC-98	PDF

BSIM3 CIRCUIT MODEL Search Results

BSIM3 CIRCUIT MODEL Result Highlights (5)

BSIM3 CIRCUIT MODEL Datasheets Context Search

bsim3

ks fuses

bsim3 model

bsim3 model

CMOS

SPICE As An AHDL

0.6 um cmos process

hv2300

CMOS

CMOS Process Family

nmos transistor 0.35 um

NMOS depletion pspice model

CMOS spice model

XH018

spice model Tunnel diode

Untitled

CMOS

NAND Flash Programmer with TSOP-48 adapter

lm 7803

bsim3 0.18 micron parameters